This 3-sentence summary provides the key details from the document: The document is a device modeling report that includes SPICE models for the power MOSFET and body diode of the Toshiba TPC6105 MOSFET. It describes the model parameters, shows simulation results comparing measurements and simulations, and evaluates characteristics including transconductance, capacitance, switching times, and reverse recovery behavior. The report also includes modeling for the integrated ESD protection diode and evaluates its zener voltage characteristic.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: TPC6105
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
7
6
5
gfs
4
3
Measurement
Simulation
2
0 1 2 3
ID(A)
Comparison table
gfs
- Id(mA) Error(%)
Measurement Simulation
0.5 2.959 2.825 -4.529
1 3.774 3.937 4.319
2 5.714 5.464 -4.375
2.7 6.000 6.294 4.900
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
-5.0A
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -0.5V -1.0V -1.5V -2.0V -2.5V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
V2
-5
TPC6105
V1
-3
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
3
Measurement
Simulation
2.5
ID - Drain Current (A)
2
1.5
1
0.5
0 1 2 3
VGS - Gate to Source Voltage - V
Simulation Result
- VGS(V)
- ID(mA) Error (%)
Measurement Simulation
0.5 1.27 1.2126 -4.520
1 1.4 1.3640 -2.571
2 1.55 1.5811 2.006
2.7 1.63 1.7026 4.454
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
-1.4A
-1.0A
-0.5A
0A
0V -50mV -100mV -150mV -200mV
I(V2)
V_V3
Evaluation circuit
V2
0Vdc
U1
V3
0Vdc
V1 TPC6105
-4.5
0
Simulation Result
ID=-1.4A, VGS=-4.5V Measurement Simulation Error (%)
R DS (on) 72.000 m 74.844 m 3.950
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
-5.0V
-2.5V
0V
0 2n 4n 6n 8n 10n
V(W1:4)
Time*1mA
Evaluation circuit
U1
W
-
+ I2
D1
W1 TPC6105 Dbreak -2.7
IOFF = 100uA
I1 TD = 0 ION = 0
TF = 10n ROFF = 1e6
PW = 200u RON = 1.0 V1
PER = 500u
I1 = 0
I2 = 1m -16
TR = 10n
0
Simulation Result
VDD=-16V,ID=-2.7A
Measurement Simulation Error (%)
,VGS=-5V
Qgs(nC) 0.8 0.837 4.625
Qgd(nC) 2 1.9016 -4.920
Qg(nC) 6.2 4.5938 -25.906
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.1 45 44.5 -1.111
0.2 40 40.6 1.500
0.5 33 33.1 0.303
1 27 26.5 -1.852
2 20 20.2 1.000
5 13 13.4 3.077
10 10 9.7 -3.000
20 7 6.9 -1.429
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
-10V
-5V
0V
1.90us 1.95us 2.00us 2.05us 2.10us 2.15us 2.20us
V(U1:3) V(U1:1)/2
Time
Evaluation circuit
L1 R2
50nH
U1 7.14
V1
L2
-10
30nH
V1 = 0 V2 TPC6105
V2 = -5 R4
TD = 2u
TR = 4n 4.7
TF = 4n
PW = 10u
PER = 30u
0
Simulation Result
ID=-1.4 A, VDD=-10V
Measurement Simulation Error(%)
VGS=0/-5V
Ton(ns) 9.000 8.574 -4.733
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
-10A
-2.8
-2.5
-3.5
-8A
-3
-6A
-2
-4A -1.8
-2A VGS=-1.5V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
V2
TPC6105
V1 -5
-2.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc
TPC6105
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
Measurement
Simulation
9
Drain reverse current IDR(A)
7
5
3
1
0 0.4 0.8 1.2 1.6 2
Source-Drain voltage VSD(V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
1 0.76 0.762 0.263
2 0.82 0.817 -0.366
5 0.93 0.931 0.108
10 1.08 1.0754 -0.426
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14.98us 15.00us 15.05us 15.09us
I(RL)
Time
Evaluation Circuit
RL
50 U1
V1 = -9.35 V1
V2 = 10.7
TD = 0
TR = 8n TPC6105
TF = 8n
PW = 15u
PER = 100u
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
Trj+Trb (ns) 18.6 19.477 4.715
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=6.8(ns)
Trb=11.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 4V 8V 12V 16V 20V
I(R1)
V_V1
Evaluation Circuit
U1
R1
0.01m
TPC6105
R2
V1
0Vdc 1G
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006