This document summarizes the modeling and simulation of a power MOSFET transistor and its internal body diode and ESD protection diode. It includes: 1) Details of the device components and manufacturer. 2) Descriptions of the MOSFET, body diode and ESD protection diode models used in the simulation. 3) Circuit simulations and results graphs characterizing the key electrical properties of the MOSFET like transconductance, capacitance, switching time and more. 4) Simulations and comparisons of the forward and reverse recovery characteristics of the body diode. 5) A zener voltage simulation of the ESD protection diode.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: SSM3J13T
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

2. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

3. Body Diode Model
Pspice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
Equivalent Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

4. Transconductance Characteristic
Circuit Simulation Result
Measurement
Simulation
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
-0.2 2.2222 2.3 -3.501
-0.5 3.5 3.6 -2.857
-1 5.1 5.015 1.667
-2 6.9643 6.945 0.277
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

5. Vgs-Id Characteristic
Circuit Simulation result
-2.0A
-1.0A
0A
0V -0.5V -1.0V -1.5V -2.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
V2
V1 -3Vdc
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

6. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
-0.020 -1.072 -1.1049 -3.069
-0.050 -1.136 -1.1368 -0.070
-0.100 -1.190 -1.1731 1.420
-0.200 -1.254 -1.225 2.313
-0.500 -1.362 -1.3301 2.342
-1.000 -1.474 -1.4520 1.493
-2.000 -1.634 -1.6307 0.202
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

7. Id-Rds(on) Characteristic
Circuit Simulation result
-5.0A
-4.5A
-4.0A
-3.5A
-3.0A
-2.5A
-2.0A
-1.5A
-1.0A
(-75.000m,-1.5000)
-0.5A
0A
0V -0.1V -0.2V -0.3V -0.4V -0.5V -0.6V -0.7V -0.8V -0.9V
I(V3)
V_V2
Evaluation circuit
V3
0V dc
V2
V1 -3V dc
-4V dc
0
Simulation Result
ID=-1.5A, VGS=-4V Measurement Simulation Error (%)
R DS (on) 50.00 m 50.00 m 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

8. Gate Charge Characteristic
Circuit Simulation result
-8.0V
-7.0V
-6.0V
-5.0V
-4.0V
-3.0V
-2.0V
-1.0V
0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:1)
Time*1ms
Evaluation circuit
V2
0Vdc
D1
I1 = 0 ION = 0uA I2
I1 IOFF = 1mA Dbreak
I2 = 1m W -3Adc
TD = 0 -
TR = 10n +
TF = 10n
PW = 600u W1 V1
PER = 1000u -10Vdc
0
Simulation Result
VDD=-10V,ID=-3A Measurement Simulation Error (%)
,VGS=-5V
Qgs 2.060 nC 2.055 nC -0.243
Qgd 1.500 nC 1.505 nC 0.333
Qg 9.750 nC 9.750 nC 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1.00 170.00 171.25 -0.74
2.00 150.00 148.00 1.33
4.00 125.00 126.00 -0.80
5.00 120.00 119.50 0.42
6.00 115.00 114.50 0.44
10.00 100.00 100.40 -0.40
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

10. Switching Time Characteristic
Circuit Simulation result
-12V
-8V
ID=-1A
Vg = 0/2.5V
-4V
0V
4.95us 5.00us 5.05us 5.10us 5.15us 5.20us
V(2)*4 I(V3)*10
Time
Evaluation circuit
L1 RL
3
V3
0.03uH 9.885
0Vdc
VDD
-10
R1 L2
2
V1 = 0 4.7 30nH 0
V1
V2 = -5 R2
TD = 5u
TR = 6n 4.7
TF = 7n
PW = 5u
PER = 100u
0 0 0
Simulation Result
ID=-1A, VDD=-10V
Measurement Simulation Error(%)
VGS=0/-2.5V
ton 48.00 ns 47.99 ns -0.02
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

11. Output Characteristic
Circuit Simulation result
-5.0A
-2.0V
-4.5A
-4.0A
-3.5A
-1.8V
-3.0A
-2.5A
-2.0A
-1.6V
-1.5A
-1.0A -1.4V
-0.5A
VGS=-1.2V
0A
0V -1.0V -2.0V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
V2
V1 -3Vdc
-4.0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

12. Output Characteristics Reference
-2.0V
-1.8V
-1.6V
-1.4V
VGS=-1.2V
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

13. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
1.0A
0.5A
0A
0V 1.0V 2.0V
I(V2)
V_V3
Evaluation Circuit
R1
0.01m
V2
0Vdc
V3
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

14. Comparison Graph
Circuit Simulation Result
Simulation Result
Vfwd(V) Vfwd(V)
Ifwd(A) Measurement Simulation %Error
0.001 0.418 0.417 -0.294
0.002 0.437 0.437 0.081
0.005 0.463 0.465 0.381
0.010 0.484 0.486 0.352
0.020 0.504 0.507 0.597
0.050 0.537 0.536 -0.111
0.100 0.565 0.567 0.285
0.200 0.590 0.588 -0.322
0.500 0.639 0.632 -1.084
1.000 0.663 0.670 1.120
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

15. Forward Current Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

16. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
14.99us 15.01us 15.03us 15.05us 15.07us 15.09us
I(R1)
Time
Evaluation Circuit
U2
R1
50
V1 = {-9.43} V1
V2 = {10.6}
TD = 0
TR = 10n
TF = 10n
PW = 15u
PER = 100u 0
0
Comparison Table
Measurement Simulation %Error
trj (ns) 9.8 ns 9.85 ns 0.510
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

17. Reverse Recovery Characteristic Reference
Measurement
Trj =9.8(ns)
Trb=22(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

18. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
50mA
25mA
0A
0V 25V 50V
I(V2)
V_V3
Evaluation Circuit
R1
0.01m
U1
V1
0Vdc DZ
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

19. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2005