Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: TPCF8302MANUFACTURER: TOSHIBABody Diode (Standard) /...
Circuit Configuration                TPCF8302MOSFET MODEL PSpice model                                          Model desc...
Transconductance CharacteristicCircuit Simulation ResultSimulation Result                                       VGS(V)    ...
Vgs-Id CharacteristicCircuit Simulation result     -5.0A     -4.0A     -3.0A     -2.0A     -1.0A        0A             0V ...
Comparison GraphCircuit Simulation ResultSimulation Result                                       VGS(V)       ID(A)       ...
Id-Rds(on) CharacteristicCircuit Simulation result        -2.0A        -1.5A        -1.0A        -0.5A            0A      ...
Gate Charge CharacteristicCircuit Simulation result             -10V              -8V              -6V                    ...
Capacitance Characteristic                                                                Measurement                     ...
Switching Time CharacteristicCircuit Simulation result        -12V                              VDS = -10V                ...
Output CharacteristicCircuit Simulation result                -10A                          -10V                          ...
Forward Current CharacteristicCircuit Simulation Result         -10A       -100mA                0V    0.1V 0.2V 0.3V 0.4V...
Comparison GraphCircuit Simulation ResultSimulation Result                            Vfwd(V)                   Vfwd(V)   ...
Reverse Recovery CharacteristicCircuit Simulation Result            400mA            300mA            200mA            100...
Reverse Recovery Characteristic                                              ReferenceTrj=4.0(ns)Trb=19.6(ns)Conditions:If...
ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result                -10mA                ...
Zener Voltage Characteristic                                               Reference            All Rights Reserved Copyri...
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SPICE MODEL of TPCF8302 (Standard+BDS Model) in SPICE PARK

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SPICE MODEL of TPCF8302 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TPCF8302 (Standard+BDS Model) in SPICE PARK

  1. 1. Device Modeling ReportCOMPONENTS: Power MOSFET (Standard)PART NUMBER: TPCF8302MANUFACTURER: TOSHIBABody Diode (Standard) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  2. 2. Circuit Configuration TPCF8302MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  3. 3. Transconductance CharacteristicCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.200 3.170 3.017 -4.826 -0.500 4.600 4.717 2.543 -1.000 6.250 6.519 4.304 -2.000 9.090 8.980 -1.210 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  4. 4. Vgs-Id CharacteristicCircuit Simulation result -5.0A -4.0A -3.0A -2.0A -1.0A 0A 0V -1.0V -2.0V -3.0V I(V3) V_V1Evaluation circuit OPEN OPEN OPEN OPEN V3 0Vdc TPCF8302 V2 V1 -10Vdc -2.5Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  5. 5. Comparison GraphCircuit Simulation ResultSimulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.200 -1.100 -1.105 0.427 -0.500 -1.188 -1.184 -0.320 -1.000 -1.313 -1.275 -2.895 -2.000 -1.438 -1.406 -2.191 -5.000 -1.688 -1.678 -0.575 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  6. 6. Id-Rds(on) CharacteristicCircuit Simulation result -2.0A -1.5A -1.0A -0.5A 0A 0V -50mV -125mV -200mV -275mV -350mV -425mV I(V3) V_V2Evaluation circuit OPEN OPEN OPEN OPEN V3 0Vdc TPCF8302 V2 V1 -10Vdc -2.5Vdc 0Simulation Result ID=-1.5, VGS=-2.5V Measurement Simulation Error (%) R DS (on) 68 m 68 m 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  7. 7. Gate Charge CharacteristicCircuit Simulation result -10V -8V -6V VDD=-8V -4V -2V 0V 0 4n 8n 12n 16n V(W1:4) Time*1mAEvaluation circuit V2 0Vdc OPEN OPEN OPEN OPEN D1 I2 Dbreak ION = 0uA IOFF = 10m -3Adc I1 = 0 W I1 - I2 = 10m + V1 TD = 0 -16Vdc TR = 10n W1 TF = 10n PW = 600u PER = 1000u 0Simulation Result VDD=-8V,ID=-3A Measurement Simulation Error (%) ,VGS=-5V Qgs 1.30 nC 1.313 nC 1.00 Qgd 2.60 nC 2.602 nC 0.08 Qg 9.50 nC 7.930 nC -16.53 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  8. 8. Capacitance Characteristic Measurement SimulationSimulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.100 200.000 194.000 -3.000 0.200 120.000 117.000 -2.500 0.500 44.000 42.000 -4.545 1.000 16.000 16.000 0.000 2.000 5.000 5.200 4.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  9. 9. Switching Time CharacteristicCircuit Simulation result -12V VDS = -10V VGS = 0/-5V -8V -4V 0V 4.901us 4.950us 5.000us 5.050us 5.100us 5.146us V(2)*2 V(3) TimeEvaluation circuit 3 V3 0Vdc L1 30nH OPEN OPEN OPEN OPEN R1 L2 RL 2 6.7 4.7 30nH V1 = 0 V1 V2 = -10 VDD TD = 5u R2 TR = 6n TF = 6n 4.7 PW = 5u PER = 10u -10.15 0 0 0 0Simulation Result ID=-1.5A, VDD=-10V Measurement Simulation Error(%) VGS=0/-5V ton 15.000 ns 15.012 ns 0.080 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  10. 10. Output CharacteristicCircuit Simulation result -10A -10V -2.5V -9A -3V -8A -2.0V -7A -6V -6A -5A --1.8V -4A -3A -1.6V -2A -1A VGS=-1.4V 0A 0V -0.5V -1.5V -2.5V -3.5V -4.5V I(V3) V_V2Evaluation circuit OPEN OPEN OPEN OPEN V3 0Vdc V1 V2 -2.5Vdc -10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  11. 11. Forward Current CharacteristicCircuit Simulation Result -10A -100mA 0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V 1.1V I(V2) V_V3Evaluation Circuit R1 OPEN OPEN 0.01m V2 0Vdc TPCF8302 U1 V3 0Vdc OPEN OPEN 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  12. 12. Comparison GraphCircuit Simulation ResultSimulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.100 0.570 0.568 -0.439 0.200 0.600 0.600 0.050 0.500 0.650 0.654 0.569 1.000 0.705 0.707 0.270 2.000 0.780 0.775 -0.641 5.000 0.900 0.901 0.133 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  13. 13. Reverse Recovery CharacteristicCircuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 15.52us 15.56us 15.60us 15.64us 15.68us 15.72us I(R1) TimeEvaluation Circuit R1 50 OPEN OPEN V1 = -9.7v V2 = 10.6v V1 U1 TD = 0.576us TPCF8302 TR = 10ns TF = 10ns PW = 15us PER = 100us OPEN OPEN 0 0Compare Measurement vs. Simulation Measurement Simulation Error(%) trj 4.500 ns 4.677 ns 3.93 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  14. 14. Reverse Recovery Characteristic ReferenceTrj=4.0(ns)Trb=19.6(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  15. 15. ESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation Result -10mA -9mA -8mA -7mA -6mA -5mA -4mA -3mA -2mA -1mA 0A 0V -2V -4V -6V -8V -10V -12V -14V -16V -18V I(V2) V_V3Evaluation Circuit OPEN OPEN OPEN OPEN R1 OPEN 0.01m OPEN V2 0Vdc 0Vdc V3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
  16. 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005

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