The document discusses various techniques for analyzing materials at the surface, thin film, and bulk levels including SIMS, AES, ESCA, XRF, EDS, RBS, and others. It provides information on the sensitivities, spatial resolutions, quantitation depths, and types of information provided by each technique. The document also focuses on SIMS specifically, describing its principles, instrumentation types, analytical conditions, detection limits, applications for analyzing LEDs, and comparisons to other techniques.

1. LEDN-02 Analysis Techniques Sample Probe Response Modified Probe Probe : photo Response : photo electron electron ion ion phonon phonon

2. Analysis Techniques phonon photo photo XRF, TXRF, FTIR, Raman electron electron ion ion phonon SIMS, RBS , ISS, GDMS ESCA EDS PIXE, GDOS SEM, TEM, AES, EELS LAMMA LEDN-03 Scanning Acoustic Microscopy

3. LEDN-004 Analysis Techniques Elemental Molecular Surface ( <10 Å) Thin film ( <100 Å - 1  m) Bulk ( > 10  m) Types of information provided by chemical analysis

4. LEDN-005 Surface and Thin film Analysis Surface Thin Film Elemental Molecular TXRF EDS RBS AES ESCA SIMS

5. 100% 100 ppm 1% 1 ppm XRF ESCA AES RBS SIMS EDX 100Å 10 µm 0.1 µm 1 µm 1 µm 0.1 µm 10 µm 100 µm 1 mm VD D E SENSITIVITY SPATIAL RESOLUTION QUANTITATION DEPTH RESOLUTION LEDN-006 SIMS vs. Other Techniques

6. LEDN-07 Analysis Principle Excitation Photoelectron E b = h  -E k -  Relaxtation ESCA EDS, XRF AES Auger electron KL 1 L 2,3 K (1s) L 1 (2s) L 2,3 (2s) Atom Ion e- h  h 

7. LEDN-08 Analysis Principle X-ray fluorescence (surface) Incident X-rays TRXF Depth information determined either by excitation depth or by escape depth 10-100 Å electron escape depth 1  m Electron excitation depth Auger electrons (surface) X-ray fluorescence Primary Electrons 10-100 Å electron escape depth 100-1000  m X-ray excitation depth photoelectrons (surface) X-ray fluorescence Incident X-rays

8. LEDN-09 Absorbed molecules Sputtered atoms SIMS Principle Sputtering event + + + Primary ions (~10 keV) Sample atoms + + - + + Secondary ions Mixing range (~100 Å) Escape range (~10 Å) Desorbed molecular ions

9. LEDN-10 SIMS Technique Schema ION SOURCE Sample MASS SPECTROMETER DETECTOR MASS SPECTRUM  m DEPTH PROFILE X-Y IMAGE VACCUM m/q

10. Magnetic sector Quadrupole Time of Flight LEDN-11 SIMS Instrument Type r = k/B(m/q) 1/2 M-  M M M+  M Vo(t) = Vc+Vs cos  t t-  t ~ M-  M t ~ M t+  t ~ M+  M ion pulse Detection & Registration m/q ~ B m/q ~ V(f) m/q ~ t

11.  << A  = A Static SIMS Dynamic SIMS Primary ion dose <1E12 ions/cm2 >1E12 ions/cm2 Information Chemical Elemental Analysis Only surface Depth profile Instrument TOF & Quad Magnetic & Quad Ion damage section,  Desorption area, D Bombarded surface, A LEDN-12 Dynamic vs. Static SIMS primary ion ion: elementa l information ion: molecular information

12. LEDN-13 Comparison of SIMS Instruments Magnetic Sector Quadrupole Time of Flight Transmission High (~10 -1 ) Low (~10 -3 ) High (~10 -1 ) Mass range Low (< 500) Low (< 600) Unlimited Mass resolution High ~ 10000 Low ~ 500 High ~ 10000 Detection speed Low High Quasi-parallel Charge compensation Difficult Easy Easy Analysis modes Bulk analysis Depth profiling (100Å-100  m) Imaging Bulk analysis Depth profiling (0Å-10  m) Imaging Surface Analysis Depth profiling (0Å-1  m) Imaging

13. Analytical Condition LEDN-14 Oxygen bombardment & Positive ions Cs bombardment & Negative ions Cs bombardment & Oxygen bombardment

14. LEDN-15 Detection Limits (atoms/cm3) in InP, GaAs, GaN For electropositive elements SIMS Detection Limit

15. LEDN-16 Detection Limits (atoms/cm3) in GaAs,InP and GaN For electronegative elements SIMS Detection Limit

16. Depth (  m) 1E13 at/cm3 LEDN-17 High Mass Resolution Analysis for P in Si High Sensitivity Concentration(at/cm3) P implantation in Si (2E12 atoms/cm2, 300 keV)

17. LEDN-18 Depth profiling of Multi-Quantum wells InGaAsP/InGaAs SIMS Depth Resolution Lz = 110 Å Lz = 125 Å

18. SiC fiber in a Ti matrix (V-doped) LEDN-19 Ti C Si V 50  m Ga + primary ion (30 keV, 50 pA) Ti + : 10s; Si + : 200s; V + : 100s; C + : 200s SIMS Image Analysis

19. SIMS Analysis for GaN LEDs LEDN-20 Enhance production yield Wafer Control LED wafers Test wafers Purity control (C,H,O,metals) Doping control (Si, Mg) Layer thickness (Growth rate) Interface quality Film composition (AlGaN,InGaN) SIMS analysis Calibration & Optimization of Growth GaN Epitaxy Growth Failure analysis Reverse engineering LED dies Reduce R&D cycle time

20. SIMS for AlInGaP LED LEDN-21 Depth (micron) Concentration (atoms/cm 3 ) AlInGaP

21. LEDN-22 SIMS for GaN LED Depth (micron) Concentration (atoms/cm 3 ) InGaN

22. SIMS for AlInGaP LD LEDN-23 Depth (micron) Concentration (atoms/cm 3 ) AlInGaP

23. SIMS for AlGaAs VCSEL LEDN-24 Depth (micron) Concentration (atoms/cm 3 ) VCSEL

24. SIMS for LED dies LEDN-25 GaN LED die SIMS craters AlInGaP LED die SIMS craters Doping concentration and distribution Undesirable Impurities Layer structure control Failure analysis Epi-layer structure p- and n-type metal stacks Passivation layers Reverse engineering

25. PL on the beveled surface SIMS profile Comparison between PL and SIMS LEDN-26 Composition Analysis by SIMS Al x Ga 1-x As composition by MCs + technique A B C D

26. Composition Analysis by Auger LEDN-27 Depth profiling of the top layers of GaN die