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NAME: NORALINA ABDUL AZIZ
MATRIC NO: A117805
SUPERVISOR NAME: DR. SAWAL HAMID
MD. ALI
EXAMINER NAME: DR. SHABIUL
HYBRID ALGORITHM FOR ANALOG
CIRCUIT DESIGN AUTOMATION
PROBLEM STATEMENT
OBJECTIVES
SCOPE
METHODOLOGY
MATHEMATICAL ANALYSIS
Specification given are Ad = 30 dB and channel length, L = 0.18µm
NMOS PMOS
Lambda, λ 0.09 V-1
0.09 V-1
threshold voltage, Vth 0.3694303 V -0.3823437 V
process transconductance parameter, kn’ 171.0/2 µA/V2
-37.0/2 µA/V2
MOSIS BSIM3 parameter
METHODOLOGY
NMOS PMOS
Gate voltage, VG 1 V 1.24489 V
Source voltage, VS 518.759 mV 1.8 V
VGS = VG – VS 0.481241 V -0.55511 V
Vth 0.3694303 V -0.3823437 V
|Vov| = |VGS| – |Vth| 0.111811 V 0.172766 V
kn’ 342µ A/V2
-74µ A/V2
Parameter for determined
transconductance
METHODOLOGY
NMOS PMOS
Kn’ 342 µA/V2
-74 µA/V2
Vov 0.111811 V 0.172766 V
ro = VA/ID 111 KΩ 111 KΩ
gm 402.4409W 112.1371W
W 2.68 µ 8.02 µ
Parameter for determined channel width, W of MOSFET
gm = kn’(W/L)VOV
Ad = (½) gmro
METHODOLOGY
METHODOLOGY
value
Gain 26 dB
Gain bandwidth 23 dB
Cut off frequency 50 MHz
Values of gain and cut - off frequency of the OTA circuit
METHODOLOGY
values
Gain 24.584 dB
Gain bandwidth 21.584 dB
METHODOLOGY
Calculation Values Optimize Values
W for NMOS 2.68 µ 5.743 µ
W for PMOS 8.02 µ 28.719 µ
gain 24.584 dB 24.670 dB
METHODOLOGY
METHODOLOGY
METHODOLOGY
AFTER BEFORE ERROR
W for NMOS 5.8000 µ 5.7430 µ 0.99 %
W for PMOS 20.000 µ 28.719 µ 30.36 %
Magnitude 24.671 dB 24.656 dB 0.06 %
Timing 10 minutes 20 minutes
S
EW
N
CONCLUSION
After some calculations are done, the W values obtained from this calculation
are 2.68µ for NMOS and 8.02µ for PMOS MOSFET. Then, the calculations are
proceeded by doing simulation in LTSPICE. After simulation, the gain is 26dB.
There are 4dB differences. This is because doing calculation using the equation
actually does not consider all parameters of 0.18µ technology, but while doing
simulation, the simulator will consider all these parameters. After that, the
circuit is simulated again using WINSPICE simulator and the gain is 24.584dB.
The difference in gain values between LTSPICE and WINSPICE is because
simulation engine between these simulators are not the same. Then, GA will be
implemented by MATLAB. After GA tool is runned it comes with the optimized
values of W that is 5.743µ for NMOS and 28.719µ for PMOS. The gain for this
optimized value is 24.656 dB. This shows that the optimized gain value for OTA
circuit is 24.656 dB and no other values are best beside that. GA was also
runned with the ranges that are very close with calculation values as guide or
called as hybrid. The difference in timing between hybrid and before hybrid is
about 10 minutes. The error for this difference gain only 0.06%.
THANKS FOR
THE TIME

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Hybrid Algorithm for Analog Circuit Design Automation

  • 1. NAME: NORALINA ABDUL AZIZ MATRIC NO: A117805 SUPERVISOR NAME: DR. SAWAL HAMID MD. ALI EXAMINER NAME: DR. SHABIUL HYBRID ALGORITHM FOR ANALOG CIRCUIT DESIGN AUTOMATION
  • 6. MATHEMATICAL ANALYSIS Specification given are Ad = 30 dB and channel length, L = 0.18µm NMOS PMOS Lambda, λ 0.09 V-1 0.09 V-1 threshold voltage, Vth 0.3694303 V -0.3823437 V process transconductance parameter, kn’ 171.0/2 µA/V2 -37.0/2 µA/V2 MOSIS BSIM3 parameter
  • 7. METHODOLOGY NMOS PMOS Gate voltage, VG 1 V 1.24489 V Source voltage, VS 518.759 mV 1.8 V VGS = VG – VS 0.481241 V -0.55511 V Vth 0.3694303 V -0.3823437 V |Vov| = |VGS| – |Vth| 0.111811 V 0.172766 V kn’ 342µ A/V2 -74µ A/V2 Parameter for determined transconductance
  • 8. METHODOLOGY NMOS PMOS Kn’ 342 µA/V2 -74 µA/V2 Vov 0.111811 V 0.172766 V ro = VA/ID 111 KΩ 111 KΩ gm 402.4409W 112.1371W W 2.68 µ 8.02 µ Parameter for determined channel width, W of MOSFET gm = kn’(W/L)VOV Ad = (½) gmro
  • 10. METHODOLOGY value Gain 26 dB Gain bandwidth 23 dB Cut off frequency 50 MHz Values of gain and cut - off frequency of the OTA circuit
  • 12. METHODOLOGY Calculation Values Optimize Values W for NMOS 2.68 µ 5.743 µ W for PMOS 8.02 µ 28.719 µ gain 24.584 dB 24.670 dB
  • 15. METHODOLOGY AFTER BEFORE ERROR W for NMOS 5.8000 µ 5.7430 µ 0.99 % W for PMOS 20.000 µ 28.719 µ 30.36 % Magnitude 24.671 dB 24.656 dB 0.06 % Timing 10 minutes 20 minutes
  • 16. S EW N CONCLUSION After some calculations are done, the W values obtained from this calculation are 2.68µ for NMOS and 8.02µ for PMOS MOSFET. Then, the calculations are proceeded by doing simulation in LTSPICE. After simulation, the gain is 26dB. There are 4dB differences. This is because doing calculation using the equation actually does not consider all parameters of 0.18µ technology, but while doing simulation, the simulator will consider all these parameters. After that, the circuit is simulated again using WINSPICE simulator and the gain is 24.584dB. The difference in gain values between LTSPICE and WINSPICE is because simulation engine between these simulators are not the same. Then, GA will be implemented by MATLAB. After GA tool is runned it comes with the optimized values of W that is 5.743µ for NMOS and 28.719µ for PMOS. The gain for this optimized value is 24.656 dB. This shows that the optimized gain value for OTA circuit is 24.656 dB and no other values are best beside that. GA was also runned with the ranges that are very close with calculation values as guide or called as hybrid. The difference in timing between hybrid and before hybrid is about 10 minutes. The error for this difference gain only 0.06%.