This document provides information on various semiconductor crystal growth techniques and processes that have been developed throughout history including: - The Czochralski crystal growth technique developed in 1918 for growing semiconductor single crystals like silicon and germanium. - The Bridgman technique developed in 1925 for growing crystals like gallium arsenide. - Impurity diffusion developed in 1952 for diffusing impurity atoms into semiconductors. - Lithographic photoresist developed in 1957 to increase integrated circuit density.

1. NAME:-SURAJ KUMAR
ROLL NO:-BTECH 44/13
Crystal, Semiconductor
Process Technology

2. CZOCHRALSKI CRYSTAL GROWTH
Name:-JAN CZOCHRALSKI
Year:-1918
Use:-To obtain single crystal of
semiconductor . Eg - Si, Ge, Ag, Au.
BRIDGMAN CRYSTAL GROWTH
Name:-PERCY WILLIAMS BRIDGMAN
Year:-1925
Use:-extensively for the growth of
gallium arsenide and related
compound semiconductor crystal.6

3. DIFFUSION
Name:-WILLIAM G.PFANN
Year:-1952
Use:-diffusion of impurity atom in
semiconductor.
LITOGRAPHIC PHOTORESIST
Name:-ANDRUS
Year:-1957
Use:-increase in density of devices
and integrated circuit.

4. OXIDE MASKING METHOD
Name:- Carl Frosch and Lincoln Derick
Year:-1957
Use:-oxide layer can prevent most
impurity atoms from diffusing through
it.
HYBRID INTEGRATED CIRCUIT
Name:-JACK KILBY
Year:-1959
Use:-in various electronic
equipments.Eg-
mobiles,computers,digital home
appliences.

5. MONOLITHIC INTEGRATED
CIRCUIT
Name:-ROBERT NOYCE
Year:-1959
Use:- aluminum metallization
PLANAR PROCESS
Name:-HOERNI
Year:-1960
Use:-primary process by rich
modern ICs are build

6. Transferred Electron Diode
Name:- J.B .Gunn
Year:-1963
Use:-detection system, remote
controls, microwave test
instruments.
IMPATT Diode
Name:-Ralph L. Johnston
Year:-1965
Use:-used as radar and alarm
system, it can generate the
highest continuous-wave(CW).

7. CMOS(Complementary Metal-Oxide
Semiconductor)
Name:-FRANK WANLASS&SAH
Year:-1963
Use:-Stores the basic input/output
system, or BIOS, settings of the
computer.
DRAM(Dynamic Random Acess
Memory)
Name:-ROBERT H. DENNARD
Year:-1967
Use:-used for data or program
code that a computer processor
needs to function.

8. NVSM(Nonvolatile
semiconductor Memory)
Name:- Kahvg and SZE
Year:-1967
Use:-refer the information when
the power supply is switched off.
POLYSILICON SELF-ALIGNED GATE
Name:-Kerwin ,Klein &Sarac
Year:-1969
Use:-as a mask for the doping of
the source and drain regions.

9. MOCVD(Metal Organic Vapors
Deposition)
Name:-Manasevit & Simpson
Year:-1969
Use:- produce single or
polycrystalline thin films.
CCD(Chang Coupled Device)
Name:-Boyle And Amith
Year:-1970
Use:-used in videos cameras and
in optical sensing applications.

10. Microprocessor(4004)
Name:-Hoffetal.
Year:-1971
Use:- Incorporates the functions
of a computer's central processing
unit (CPU) on a single integrated
circuit (IC).
RTD( Resonant Tunneling
Diode)
Name:-Chawg
Year:-1974
Use:-used for most quantum
effect devices which offer
internally high density,ultraspeed
and enhanced functionality.

11. SINGLE CRYSTAL
• A single crystal is a material in
which the crystal lattice is
continuous throughout.
• Atoms are oriented in one
direction.
• They are anisotropic.
• Infinite periodicity.
USES :-
• In fabrication of semiconductors.
• Used for lasers and non linear
optics.(sapphire),
• Used in the objective
lenses.(fluorite).

12. POLYCRYSTAL
• Aggregate of several crystals or
grains.
• All single crystal have different
orientation.
• They are anisotropic and
isotropic in nature,
• Atomic structure has long-range
order.
USES:-
• Manufacturing of solar cell.

13. AMORPHOUS SOLID
• Don't have definite geometrical
shape.
• They have no long range order.
• Isotropic in nature.
USES:-
• a-Si solar cells.
• thin-film silicon solar cells.