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INTRODUCTION
 Transistor is a three terminal electronic
device, made up of semiconductor material
which generally consist of three parts.
i. Base
ii. Emitter
iii. Collector
PARTS OF TRANSISTOR
 Emitter:-It is of moderate size and it’s heavily
doped. it’s main function is to supply majority
charge carriers.
 Collector:-It is larger in size and it’s moderately
doped. It’s main function is to collect majority
charge carriers.
 Base:-It’s the middle section of the transistor
and very lightly doped,thin in size.It’s main
function is to reduce the recombination of
charge carriers within base.
TRANSISTORS (NPN , PNP)
n p n
E
B
c
Cross Section
P N P
Cross Section
(NPN) (PNP)
E
B
c
Schematic Symbol Schematic Symbol
EE
BB
cc
TRANSISTOR WORKING PRINCIPLE
The transistor can function as:
An insulator
A conductor
 The transistor's ability to fluctuate between these two
states enables it to switch or amplify.
 Biased transistor:-A biased transistor
means a transistor which is connected with
external voltage source.
CONNECTION CONFIGURATION OF TRANSISTOR
 Common base configuration.
 Common Emitter configuration.
 Common Collector configuration.
 Common base
configuration
CONNECTION CONFIGURATION OF TRANSISTOR
 Common Emitter
configuration.
 Common Collector
configuration.
WORKING REGION OF TRANSISTOR
Region Emitter Base Junction Collector Base
Junction
Active Forward biased Reverse biased
Cut-off Reverse biased Reverse biased
Saturation Forward biased Forward biased
 A biased transistor works in three region:-
OPERATION OF N-P-N TRANSISTOR
 Base to Emitter junction is forward biased
by the dc source v .
 Collector to base junction is reverse
biased by the dc source v .
 The forward biased EB junction causes
the n type emitter electrons to flow
towards base.This constitute emitter
current.
 Some electrons combine in base region
and constitute base current.
 Remaining electrons cross base region
and move through collector region and it
constitute collector current.
BE
CE
OPERATION OF P-N-P TRANSISTOR
 Base to Emitter junction is forward
biased by the dc source v .
 Collector to base junction is
reverse biased by the dc source v
.
 The forward biased EB junction
causes the p type emitter hole to
flow towards base.This constitute
emitter current.
 Some hole combine in base region
and constitute base current.
 Remaining hole cross base region
and move through collector region
and it constitute collector current.
CE
BE
TRANSISTOR CURRENT
I
I
I
I I IB
B
E
CC
E
npn
IE = IB + IC
pnp
IE = IB + IC
TRANSISTOR VOLTAGE
v
vv
v v
v
CB
BE
CE
CB
BE
CE
npn
VCE = -VCB + VBE
pnp
VCE = -VCB + VBE
CURRENT GAIN
 = Common-emitter current gain
 = Common-base current gain
= Common-collector current gain
 = IC /I  = I /I =I / I
The relationships between the two
parameter
β 
 + 1 1 - 
B B
α = β =
DC  and DC α
CE E
TRANSISTOR OPERATION
Operation Region Bias Application
CUT OFF REGION IB and Ic are 0 (base-
emitter and collector –
base junction is reverse
biased)
Open Switch (OFF)
SATURATION REGION Base emitter junction is
forward biased; IB flows
Closed Switch (ON)
ACTIVE REGION B-E junction is forward
biased but C-B junction
is reverse biased;
Amplifier
TRANSISTOR AS A SWITCH
ON MODE
Presentation based on Transistors

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Presentation based on Transistors

  • 1.
  • 2. INTRODUCTION  Transistor is a three terminal electronic device, made up of semiconductor material which generally consist of three parts. i. Base ii. Emitter iii. Collector
  • 3. PARTS OF TRANSISTOR  Emitter:-It is of moderate size and it’s heavily doped. it’s main function is to supply majority charge carriers.  Collector:-It is larger in size and it’s moderately doped. It’s main function is to collect majority charge carriers.  Base:-It’s the middle section of the transistor and very lightly doped,thin in size.It’s main function is to reduce the recombination of charge carriers within base.
  • 4. TRANSISTORS (NPN , PNP) n p n E B c Cross Section P N P Cross Section (NPN) (PNP) E B c Schematic Symbol Schematic Symbol EE BB cc
  • 5. TRANSISTOR WORKING PRINCIPLE The transistor can function as: An insulator A conductor  The transistor's ability to fluctuate between these two states enables it to switch or amplify.
  • 6.  Biased transistor:-A biased transistor means a transistor which is connected with external voltage source.
  • 7. CONNECTION CONFIGURATION OF TRANSISTOR  Common base configuration.  Common Emitter configuration.  Common Collector configuration.  Common base configuration
  • 8. CONNECTION CONFIGURATION OF TRANSISTOR  Common Emitter configuration.  Common Collector configuration.
  • 9. WORKING REGION OF TRANSISTOR Region Emitter Base Junction Collector Base Junction Active Forward biased Reverse biased Cut-off Reverse biased Reverse biased Saturation Forward biased Forward biased  A biased transistor works in three region:-
  • 10. OPERATION OF N-P-N TRANSISTOR  Base to Emitter junction is forward biased by the dc source v .  Collector to base junction is reverse biased by the dc source v .  The forward biased EB junction causes the n type emitter electrons to flow towards base.This constitute emitter current.  Some electrons combine in base region and constitute base current.  Remaining electrons cross base region and move through collector region and it constitute collector current. BE CE
  • 11. OPERATION OF P-N-P TRANSISTOR  Base to Emitter junction is forward biased by the dc source v .  Collector to base junction is reverse biased by the dc source v .  The forward biased EB junction causes the p type emitter hole to flow towards base.This constitute emitter current.  Some hole combine in base region and constitute base current.  Remaining hole cross base region and move through collector region and it constitute collector current. CE BE
  • 12. TRANSISTOR CURRENT I I I I I IB B E CC E npn IE = IB + IC pnp IE = IB + IC
  • 13. TRANSISTOR VOLTAGE v vv v v v CB BE CE CB BE CE npn VCE = -VCB + VBE pnp VCE = -VCB + VBE
  • 14. CURRENT GAIN  = Common-emitter current gain  = Common-base current gain = Common-collector current gain  = IC /I  = I /I =I / I The relationships between the two parameter β   + 1 1 -  B B α = β = DC  and DC α CE E
  • 15. TRANSISTOR OPERATION Operation Region Bias Application CUT OFF REGION IB and Ic are 0 (base- emitter and collector – base junction is reverse biased) Open Switch (OFF) SATURATION REGION Base emitter junction is forward biased; IB flows Closed Switch (ON) ACTIVE REGION B-E junction is forward biased but C-B junction is reverse biased; Amplifier
  • 16. TRANSISTOR AS A SWITCH