This document describes the design and analysis of a single-ended inductively degenerated interstage matched common-source cascode CMOS low noise amplifier (LNA). The LNA is implemented using a 90nm CMOS process. It employs a cascode topology with single-ended source degeneration using an inductor to achieve high gain. An interstage inductor between the common source and common gate stages is used to further increase the overall gain. Simulation results show the LNA has a noise figure of 1.986dB at 2.4GHz, a voltage gain of 19.1dB, and operates with low noise and high gain as required for applications such as wireless communications.
DESIGN AND NOISE OPTIMIZATION OF RF LOW NOISE AMPLIFIER FOR IEEE STANDARD 802...VLSICS Design
Low noise amplifier is the front end block of radio-frequency receiver system. Its design required various characteristics such as power gain, noise figure, insertion losses and power consumption. In this paper we have proposed a single stage low noise amplifier design with high gain and low noise using inductive source degeneration topology for frequency range of 3 GHz to 7 GHz and also use the active biasing devices. A range of devices like inductors and capacitors are used to achieve 50 Ω input impedance with a low noise factor. The design process is simulated process is using Advance Design System (ADS) and implemented in TSMC 0.18 µm CMOS technology. A single stage low noise amplifier has a measured forward gain 25.4 dB and noise figure 2.2 dB at frequency 5.0 GHz.
Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology ...VLSICS Design
This paper presents the design theory of conventional single-ended LNA and differential LNA based on CMOS technology. The design concepts give an useful indication to the design trade-offs associated with NF, gain and impedance matching. Four LNA’s have been designed using technological design rules of TSMC 0.18-µm CMOS technology and this work mainly proposed for IEEE 802.11a applications. With 1.8V supply voltage, the proposed LNA’s achieve a gain higher than 19dB, a noise figure less than 4dB and impedance matching less than -10dB at 5GHz frequency. The goal of this paper is to highlight the efficient LNA architecture for achieving simultaneous gain, noise and input matching at low supply voltage. The performance of all LNA’s are analysed and compared using Agilent’s Advanced Design System Electronic Design Automation tools.
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is an open access international journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
DESIGN AND NOISE OPTIMIZATION OF RF LOW NOISE AMPLIFIER FOR IEEE STANDARD 802...VLSICS Design
Low noise amplifier is the front end block of radio-frequency receiver system. Its design required various characteristics such as power gain, noise figure, insertion losses and power consumption. In this paper we have proposed a single stage low noise amplifier design with high gain and low noise using inductive source degeneration topology for frequency range of 3 GHz to 7 GHz and also use the active biasing devices. A range of devices like inductors and capacitors are used to achieve 50 Ω input impedance with a low noise factor. The design process is simulated process is using Advance Design System (ADS) and implemented in TSMC 0.18 µm CMOS technology. A single stage low noise amplifier has a measured forward gain 25.4 dB and noise figure 2.2 dB at frequency 5.0 GHz.
Performance Comparison of RF CMOS Low Noise Amplifiers in 0.18-µm technology ...VLSICS Design
This paper presents the design theory of conventional single-ended LNA and differential LNA based on CMOS technology. The design concepts give an useful indication to the design trade-offs associated with NF, gain and impedance matching. Four LNA’s have been designed using technological design rules of TSMC 0.18-µm CMOS technology and this work mainly proposed for IEEE 802.11a applications. With 1.8V supply voltage, the proposed LNA’s achieve a gain higher than 19dB, a noise figure less than 4dB and impedance matching less than -10dB at 5GHz frequency. The goal of this paper is to highlight the efficient LNA architecture for achieving simultaneous gain, noise and input matching at low supply voltage. The performance of all LNA’s are analysed and compared using Agilent’s Advanced Design System Electronic Design Automation tools.
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is an open access international journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
Optimization of Cmos 0.18 µM Low Noise Amplifier Using Nsga-Ii for UWB Applic...VLSICS Design
A design and optimization of 3-5 GHz single ended Radio Frequency (RF) Low Noise Amplifier (LNA) for
ultra-wide-band (UWB) applications using standard UMC 0.18 μm CMOS technology is reported.
Designing of RF circuit components is a challenging job, since even after performing lengthy calculations
and finding parameter values it is less guarantee that the design performs as expected. In view of this the
optimization tool; Elitist Non-Dominated Sorting Genetic Algorithm (NSGA-II); has been employed to get
the optimized starting values of components in the proposed LNA design. The obtained NSGA-II
parameters were simulated using Cadence Spectre- RF simulator. The designed Low Noise Amplifier
achieves a power gain of 22 dB and a minimum Noise Figure of 3 dB is achieved. It dissipates 12.5 mW of
power out of 1.8 V supply.
International Journal of Engineering Research and Applications (IJERA) aims to cover the latest outstanding developments in the field of all Engineering Technologies & science.
International Journal of Engineering Research and Applications (IJERA) is a team of researchers not publication services or private publications running the journals for monetary benefits, we are association of scientists and academia who focus only on supporting authors who want to publish their work. The articles published in our journal can be accessed online, all the articles will be archived for real time access.
Our journal system primarily aims to bring out the research talent and the works done by sciaentists, academia, engineers, practitioners, scholars, post graduate students of engineering and science. This journal aims to cover the scientific research in a broader sense and not publishing a niche area of research facilitating researchers from various verticals to publish their papers. It is also aimed to provide a platform for the researchers to publish in a shorter of time, enabling them to continue further All articles published are freely available to scientific researchers in the Government agencies,educators and the general public. We are taking serious efforts to promote our journal across the globe in various ways, we are sure that our journal will act as a scientific platform for all researchers to publish their works online.
For ease of analog or digital information transmission and reception, modulation is the foremost important technique. In the present project, we’ll discuss about different modulation scheme in digital mode done by operating a switch/ key by the digital data. As we know, by modifying basic three parameters of the carrier signal, three basic modulation schemes can be obtained; generation and detection of these three modulations are discussed and compared with respect to probability of error or bit error rate (BER).
will provide you a basic introduction about digital modulation techniques, provide a basic introduction of ASK(Amplitude shift keying) PSK(phase shift keying) FSK(frequency shift keying) and will also provide a introduction about types of PSK
System(board level) noise figure analysis and optimizationcriterion123
For sensitivity, what a system (board level) RF engineer can improve is only noise figure. This document describes that the noise figure concept you should know, and how to optimize it to improve sensitivity.
In this work, a highly linear Cascode CMOS LNA is presented. Linearity issues in RF receiver frontend are discussed, followed by an analysis of the specifications and requirements of a LNA through consideration of multi-standard LNA. Device non-linear characteristics cause linearity problems in the RF front-end system. To solve this problem, Post linearization technique for inductively degenerated L-deg common source Cascode Low Noise Amplifier is presented, which improves linearity performance with small gain loss and current consumption as consequence.The LNA presented has 1.0GHz - 3.2GHz frequency range designed using TSMC 0.18µm CMOS process. The linearized LNA achieves an IIP3 of 5.0 dBm, with P-1dB of -14 dBm, 13.8 dB gain max , NF 2.03dB and power utilization of 19.4 mWat 1.8 volt power supply Gaurav R. Agrawal | Leena A. Yelmule "Linear CMOS LNA" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-1 , December 2018, URL: http://www.ijtsrd.com/papers/ijtsrd19087.pdf
Optimization of Cmos 0.18 µM Low Noise Amplifier Using Nsga-Ii for UWB Applic...VLSICS Design
A design and optimization of 3-5 GHz single ended Radio Frequency (RF) Low Noise Amplifier (LNA) for
ultra-wide-band (UWB) applications using standard UMC 0.18 μm CMOS technology is reported.
Designing of RF circuit components is a challenging job, since even after performing lengthy calculations
and finding parameter values it is less guarantee that the design performs as expected. In view of this the
optimization tool; Elitist Non-Dominated Sorting Genetic Algorithm (NSGA-II); has been employed to get
the optimized starting values of components in the proposed LNA design. The obtained NSGA-II
parameters were simulated using Cadence Spectre- RF simulator. The designed Low Noise Amplifier
achieves a power gain of 22 dB and a minimum Noise Figure of 3 dB is achieved. It dissipates 12.5 mW of
power out of 1.8 V supply.
International Journal of Engineering Research and Applications (IJERA) aims to cover the latest outstanding developments in the field of all Engineering Technologies & science.
International Journal of Engineering Research and Applications (IJERA) is a team of researchers not publication services or private publications running the journals for monetary benefits, we are association of scientists and academia who focus only on supporting authors who want to publish their work. The articles published in our journal can be accessed online, all the articles will be archived for real time access.
Our journal system primarily aims to bring out the research talent and the works done by sciaentists, academia, engineers, practitioners, scholars, post graduate students of engineering and science. This journal aims to cover the scientific research in a broader sense and not publishing a niche area of research facilitating researchers from various verticals to publish their papers. It is also aimed to provide a platform for the researchers to publish in a shorter of time, enabling them to continue further All articles published are freely available to scientific researchers in the Government agencies,educators and the general public. We are taking serious efforts to promote our journal across the globe in various ways, we are sure that our journal will act as a scientific platform for all researchers to publish their works online.
For ease of analog or digital information transmission and reception, modulation is the foremost important technique. In the present project, we’ll discuss about different modulation scheme in digital mode done by operating a switch/ key by the digital data. As we know, by modifying basic three parameters of the carrier signal, three basic modulation schemes can be obtained; generation and detection of these three modulations are discussed and compared with respect to probability of error or bit error rate (BER).
will provide you a basic introduction about digital modulation techniques, provide a basic introduction of ASK(Amplitude shift keying) PSK(phase shift keying) FSK(frequency shift keying) and will also provide a introduction about types of PSK
System(board level) noise figure analysis and optimizationcriterion123
For sensitivity, what a system (board level) RF engineer can improve is only noise figure. This document describes that the noise figure concept you should know, and how to optimize it to improve sensitivity.
In this work, a highly linear Cascode CMOS LNA is presented. Linearity issues in RF receiver frontend are discussed, followed by an analysis of the specifications and requirements of a LNA through consideration of multi-standard LNA. Device non-linear characteristics cause linearity problems in the RF front-end system. To solve this problem, Post linearization technique for inductively degenerated L-deg common source Cascode Low Noise Amplifier is presented, which improves linearity performance with small gain loss and current consumption as consequence.The LNA presented has 1.0GHz - 3.2GHz frequency range designed using TSMC 0.18µm CMOS process. The linearized LNA achieves an IIP3 of 5.0 dBm, with P-1dB of -14 dBm, 13.8 dB gain max , NF 2.03dB and power utilization of 19.4 mWat 1.8 volt power supply Gaurav R. Agrawal | Leena A. Yelmule "Linear CMOS LNA" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-3 | Issue-1 , December 2018, URL: http://www.ijtsrd.com/papers/ijtsrd19087.pdf
A New CMOS Fully Differential Low Noise Amplifier for Wideband ApplicationsTELKOMNIKA JOURNAL
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for
wideband applications. A common-gate input stage is used to improve the input impedance matching and
linearity. A common-source stage is also used as the second stage to enhance gain and reduce noise. A
shunt-shunt feedback is employed to extend bandwidth and enhance linearity. The proposed low noise
amplifier has been designed and simulated using RF-TSMC 0.18 μm CMOS process technology. In
frequency band of 3.5-7.5 GHz, this amplifier has a flat power gain (S21) of 16.5 ± 1.5 dB, low noise figure
(NF) of 3dB, input (S11) and output (S22) return losses less than -10 dB and high linearity with input thirdorder
intercept point (IIP3) of -3dBm. It’s power consumption is also less than 10 mw with low power supply
voltage of 0.8v.
LOW POWER, LOW NOISE AMPLIFIERS DESIGN AND ANALYSIS FOR RF RECEIVER FRONT END...VLSICS Design
This work is mainly to ensure the reliability of low power low noise amplifier design and analysis which is
useful for 4G receiver front ends in particularly WIMAX applications. The low noise amplifiers
implemented by using different topologies namely (a) Cascoded Common source amplifier technique(b)
Folded Cascode amplifier technique (c) Shunt feedback amplifier technique (d) Current reuse Common
gate amplifier with gm boosted technique with 90 nm TSMC CMOS technology, which is used for WIMAX
applications with 1V supply. In order to simulate and measurement the parameters such as Scattering
parameters(S21, S12 S11. S22 ),noise-figure, input matching, output matching ,stability, linearity the
Cadence ,Agilent technologies ADS and lab view graphical software have been used and Compare the
performance of the various parameters .
Design and Simulation of Low Noise Amplifiers at 180nm and 90nm TechnologiesIJERA Editor
With continued process scaling, CMOS has become a viable technology for the design of high-performance low noise amplifiers (LNAs) in the radio frequency (RF) regime. This thesis presents design and simulation of LNA at 180nm and 90nm technology. The LNA function is used to amplify signals without adding noise. The work is done on Cadence Virtuoso platform and the performance parameters like transient response and Noise figure are simulated and plotted. A supply voltage of just 5mV is used here. The noise figure at 180nm is found to be 259.722mdB at 1.04502GHz and The noise figure at 90nm is found to be 183.21mdB at 1.157GHz. 1.04502GHz and 1.157GHz are the peak frequency obtained from the frequency response of the Low noise amplifier. It is observed that the noise figure varies in each technology.
A 2.4 ghz cmos lna input matching design using resistive feedback topology in...eSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
A 2.4 ghz cmos lna input matching design using resistive feedback topology in...eSAT Journals
Abstract The attempt made in the paper shows an innovative designing for the enhancement and reliability in CMOS technology. A 2.4 GHz resistive feedback narrowband noise amplifier (LNA) using a series inductor input matching networks. It is easy reliable with an extra gm boosting as well as inductively degenerated topology. By using this resistive feedback topology increases the gain as well as noise figure of 2.2 dB,S21 parameter of 26dB,and IIP3 of -13dBm,while 2.8mW of power consuming from a 1.2V and its area 0.6mm2 in 0.13μm CMOS ,which gives the best figure of merit and performance. Keywords: LNA, CMOS, noise figure, resistive feedback, gm boosting, voltage gain boosting.
Low Noise Amplifier using Darlington Pair At 90nm Technology IJECEIAES
The demand of low noise amplifier (LNA) has been rising in today’s communication system. LNA is the basic building circuit of the receiver section satellite. The design concept demonstrates the design trade off with NF, gain, power consumption. This paper reports on with analysis of wideband LNA. This paper shows the schematic of LNA by using Darlington pair amplifier. This LNA has been fabricated on 90nm CMOS process. This paper is focused on to make comparison of three stage and single stage LNA. Here, the phase mismatch between these patameters is quantitavely analyzed to study the effect on gain and noise figure (NF). In this paper, single stage LNA has shown the 23 dB measured gain, while the three stages LNA has demonstrated 29 dB measured gain. Here, LNA designed using darlington pair shows low NF of 3.3-4.8 dB, which comparable to other reported single stage LNA designs and appreciably low compared to the three stages LNA. Hence, findings from this paper suggest the use of single stage LNA designed using Darlington pair in transceiver satellite applications.
DESIGN AND ANALYSIS OF 2 GHz 130nm CMOS CASCODE LOW NOISE AMPLIFIER WITH INTE...csijjournal
This work, illustrates the development of 2 GHz Low Noise Amplifier (LNA) interfaced with square truncated edge-fed right circularly polarized patch antenna. The LNA is simulated on Agilent ADS platform with TSMC 130nm RF CMOS process. The development of cascode amplifier and its optimization has been further exemplified. The developed LNA is tuned for 2 GHz and the performance is tuned for high stability factor of 4, Gain of 19 dB which is essential for any mobile device, Noise Figure (NF) of 1.15 dB with a P1dB point at -9 dBm. Further a truncated patch antenna with right circular polarization has been simulated on EMpro. The antenna has a gain of 6.1 dB in the azimuth plane. The simulated system can be further integrated to form the RF front end of TDD2000 LTE standard mobile device.
Double feedback technique for reduction of Noise LNA with gain enhancementijceronline
In this paper we present a balun low noise amplifier (LNA) in which the gain is boosted by using a double feedback structure. The circuit is based on a conventional balun LNA with noise and distortion cancelation. The LNA is based on the combination of a common-gate (CG) stage and common-source (CS) stage. We propose to replace the load resistors by active loads, which can be used to implement local feedback loops (in the CG and CS stages). This will boost the gain and reduce the noise figure (NF). Simulation results, with a 130nm CMOS technology, show that the gain is 24dB and the NF is less than 2.7dB. The total power dissipation is only 5.4mW (since no extra blocks are required), leading to a figure-of-merit (FOM) of 3.8mW-1 using a nominal 1.2V supply. Measurement results are presented for the proposed DFBLNA included in a receiver frontend for biomedical applications (ISM and WMTS).
First order sigma delta modulator with low-power consumption implemented in a...eSAT Journals
Abstract
This paper presents a design of a switched-capacitor discrete time 1st order Delta-Sigma modulator used for a resolution of 8 bits
Sigma-Delta analog to digital converter. For lower power consumption, the use of operational transconductance amplifier is
necessary in order to provide wide output voltage swing and moderate DC gain. Simulation results showed that with 0.35um CMOS
technology, 80 KHz signal bandwidth and oversampling rate of 64, the modulator achieved 49.25 dB Signal to Noise Ratio (SNR) and
the power consumption was 5.5 mW under ±1.5V supply voltage .
Index terms: Analog-to-Digital conversion, Delta-Sigma modulation, CMOS technology, Transconductance operational
amplifier.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Design of a Low Noise Amplifier using 0.18μm CMOS technologytheijes
The International Journal of Engineering & Science is aimed at providing a platform for researchers, engineers, scientists, or educators to publish their original research results, to exchange new ideas, to disseminate information in innovative designs, engineering experiences and technological skills. It is also the Journal's objective to promote engineering and technology education. All papers submitted to the Journal will be blind peer-reviewed. Only original articles will be published.
Design and Implementation of a Low Noise Amplifier for Ultra Wideband Applica...IOSRJVSP
This paper represents the design and implementation of Low Noise Amplifier for Ultra wideband application using 0.18μm CMOS Technology. The proposed two stage LNA is for a 3-5 GHz. At supply voltage of 1.8V, for the exceed limit of 50μm of width of each transistor, the power consumption is 7.22mW. Noise figure is 4.33dB, Maximum power gain i.e. S21 is 20.4dB, S12 < -20dB, S11 < -8dB, S22 < -10dB. For the required bandwidth range, LNA is unconditionally stable and have good linearity
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
OPTIMIZATION OF CMOS 0.18 M LOW NOISE AMPLIFIER USING NSGA-II FOR UWBVLSICS Design
A design and optimization of 3-5 GHz single ended Radio Frequency (RF) Low Noise Amplifier (LNA) for ultra-wide-band (UWB) applications using standard UMC 0.18 µm CMOS technology is reported. Designing of RF circuit components is a challenging job, since even after performing lengthy calculations and finding parameter values it is less guarantee that the design performs as expected. In view of this the optimization tool; Elitist Non-Dominated Sorting Genetic Algorithm (NSGA-II); has been employed to get the optimized starting values of components in the proposed LNA design. The obtained NSGA-II parameters were simulated using Cadence Spectre- RF simulator. The designed Low Noise Amplifier achieves a power gain of 22 dB and a minimum Noise Figure of 3 dB is achieved. It dissipates 12.5 mW of power out of 1.8 V supply
Democratizing Fuzzing at Scale by Abhishek Aryaabh.arya
Presented at NUS: Fuzzing and Software Security Summer School 2024
This keynote talks about the democratization of fuzzing at scale, highlighting the collaboration between open source communities, academia, and industry to advance the field of fuzzing. It delves into the history of fuzzing, the development of scalable fuzzing platforms, and the empowerment of community-driven research. The talk will further discuss recent advancements leveraging AI/ML and offer insights into the future evolution of the fuzzing landscape.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Vaccine management system project report documentation..pdfKamal Acharya
The Division of Vaccine and Immunization is facing increasing difficulty monitoring vaccines and other commodities distribution once they have been distributed from the national stores. With the introduction of new vaccines, more challenges have been anticipated with this additions posing serious threat to the already over strained vaccine supply chain system in Kenya.
Immunizing Image Classifiers Against Localized Adversary Attacksgerogepatton
This paper addresses the vulnerability of deep learning models, particularly convolutional neural networks
(CNN)s, to adversarial attacks and presents a proactive training technique designed to counter them. We
introduce a novel volumization algorithm, which transforms 2D images into 3D volumetric representations.
When combined with 3D convolution and deep curriculum learning optimization (CLO), itsignificantly improves
the immunity of models against localized universal attacks by up to 40%. We evaluate our proposed approach
using contemporary CNN architectures and the modified Canadian Institute for Advanced Research (CIFAR-10
and CIFAR-100) and ImageNet Large Scale Visual Recognition Challenge (ILSVRC12) datasets, showcasing
accuracy improvements over previous techniques. The results indicate that the combination of the volumetric
input and curriculum learning holds significant promise for mitigating adversarial attacks without necessitating
adversary training.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
Final project report on grocery store management system..pdfKamal Acharya
In today’s fast-changing business environment, it’s extremely important to be able to respond to client needs in the most effective and timely manner. If your customers wish to see your business online and have instant access to your products or services.
Online Grocery Store is an e-commerce website, which retails various grocery products. This project allows viewing various products available enables registered users to purchase desired products instantly using Paytm, UPI payment processor (Instant Pay) and also can place order by using Cash on Delivery (Pay Later) option. This project provides an easy access to Administrators and Managers to view orders placed using Pay Later and Instant Pay options.
In order to develop an e-commerce website, a number of Technologies must be studied and understood. These include multi-tiered architecture, server and client-side scripting techniques, implementation technologies, programming language (such as PHP, HTML, CSS, JavaScript) and MySQL relational databases. This is a project with the objective to develop a basic website where a consumer is provided with a shopping cart website and also to know about the technologies used to develop such a website.
This document will discuss each of the underlying technologies to create and implement an e- commerce website.
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Paper id 312201516
1. International Journal of Research in Advent Technology, Vol.3, No.12, December 2015
E-ISSN: 2321-9637
Available online at www.ijrat.org
43
Analysis and Design of Single-ended Inductively-
degenerated Interstage Matched Common-source
Cascode CMOS LNA
Rohit Kumar Gupta1
, Prof.Zoonubiya Ali2
1,2
Department of Electronics and Telecommunication Engineering (VLSI & Embedded System Design), Disha
Institute of Management & Technology Raipur (C.G.), India rgrohitgupta66@gmail.com, phone
+918962167126 zoonubiyakhan@yahoo.com, phone +918982890000
Abstract- The LNA is implemented using 90nm CMOS technology. The cascode topology with single-ended
source degeneration using inductor is employed. The high gain is achieved by using common-source (CS)
amplifier. A different input matching as well as output matching topology may improve the efficiency and
minimize noise of the LNA. An inductance network (Lg, Ls) is used for input matching. An interstage inductor
between the common source stage and common gate stage is used to increase the overall gain. The amplifier
operates at 2.4 GHz with an input return loss better than -15 dB. The LNA will have high isolation with voltage
gain> 15 dB, NF< 4dB, S21> 20dB and IIP3> −10dBm. The LNA consumes current< 14 mA from a near about
1.2-V supply. The detailed analysis of the proposed LNA will be presented. Experimental measurements explain
a correct operation of the circuits, tuning of Noise Figure (NF), IIP3 and S-parameters. To our knowledge, this is
the first architecture that provides all these particulars. This LNA finds its application at Portable GPS Receiver,
BLE (Bluetooth Low Energy), Zigbee, NFC, WiFi, Wireless Sensor Network, RFIC operating at 2.4GHz
frequency.
Index Terms : Inductively-degenerated, Common-source cascode Low Noise Amplifier (LNA), Interstage match,
Figure of Merit (FoM), Input referred third-order intercept point (IIP3), S-parameter.
1. INTRODUCTION
The wireless communication has been experiencing
tremendous growth in CMOS technology. The
demand has been increased for low cost RFIC
designs. Many researches are going on front end
design of RF transceiver. The design of receiver
path has become a challenging aspect, because of
increased interferences around the communication
path. Transmitter path design is easy because
interference levels are very less compared to signal
level. As the operating frequency is higher in RFIC
design, receiver path also experiencing the internal
noises in the system. The performance of
transceiver depends on each of the individual
blocks such as low noise amplifiers. The IEEE
802.15.4 i.e. 2.4 GHz is to provide communication
over distances about 10m and maximum transfer
data rates of 250 kbps. The modern wireless
technology is now motivated by the global trend of
developing multiband/wideband terminals with
multifunction transceivers at low cost.
Being the first stage in the receiver path, its
noise figure directly adds to that of the system.
Thus the purpose front end LNA is therefore to
amplify the received signal to acceptable levels i.e.
selectivity while minimizing the noise addition i.e.
sensitivity. Due to the process variations the
fluctuations in integrated capacitors, resistors and
transconductance are about 10% to 20% from their
designed values [1]. Also parasitic capacitor and
resistor exists in integrated circuits [2, 3]. The
introduction of a matching inductor between the
two transistors of the cascode structure further
improve the gain and noise performance over
the commonly used cascode design. An extensive
analysis has been carried out to enhance its
performance with the inter-stage matching
inductor. Single ended topology does not require
balun to convert signal from the antenna into a
differential signal. A practical balun introduces
extra loss which directly adds to the noise figure
of the system.
2. International Journal of Research in Advent Technology, Vol.3, No.12, December 2015
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44
2. MOTIVATION
The common approach for designing a narrowband LNA is
to use a cascode amplifier with inductive degeneration where
as the concept of multiband or wideband concurrent receiver
[4] for GPS and Bluetooth application has been used. Fig.1 [5]
shows narrowband LNA. This architecture provides
simultaneous input matching and low NF. The output tank
circuit is tuned to the required band and the input series
resonant circuit is adjusted to provide sufficient matching at
the desired frequency band.
Fig.1. Basic circuit of CMOS LNA
For this LNA, the input impedance is approximately
calculated from [5]
Zin = jω (L1+Ls) + (1/jωCgs) + ωTLs (1)
Where, ω is the frequency of operation in radians per
seconds, ωT is the transistor cut-off frequency in radians per
seconds, and Cgs is the gate–source capacitance of the main
transistor. The real part of the input impedance Zin is adjusted
using the source inductor Ls, while the imaginary part is
removed at the resonant frequency using the inductor L1. The
NF and the gain at the resonance frequency ω0 are obtained by
[5]
NF (ω0) = 1+ χ.γ.gdo (M1).Rs (ω0/ωT) 2
(2)
A (ω0) = (RL/2RS) (ω0/ωT) (3)
ω0 = ((1/ (L1+Ls) Cgs )1/2
(4)
Where, gdo (M1) is the zero bias drain transconductance of
M1, γ is the noise coefficient, χ is the excess noise factor due
to the gate noise, Rs is the source resistance and RL is the load
resistance.
The NF defined in (2) is the lowest NF that can be obtained
from this architecture, while the input is perfectly matched and
the output is tuned to the operating frequency [5]. The same
conclusion holds for the gain defined in (3). These results
indicate that the performance of the narrowband LNA depends
on the resonant frequency, which is adjusted using the
inductor L1 at the input matching network and inductor LD &
capacitor at the output tank circuit.
LNA CONCEPT, TOPOLOGY AND NOISE FIGURE
Conceptually LNA can be foreseen as a cascade of three
blocks as the input matching network, amplifier and an output
matching network as shown in the Fig.2.
Fig.2. Concept of LNA
LNA is fabricated using the different MOS topologies that
act as an amplifier along with the biasing circuitry. LNA
design practice using resistors is generally avoided to have
low noise figure [2]. Noise Figure of the first stage greatly
decreases the Noise Figure of system, as this is validated by
Frii’s equation:
F = F1+ (F2-1)/A12 + (F3-1)/A12.A22 (5)
Thus, it becomes very important to have as low Noise
Figure as possible for the first stage.
3. PROPOSED LNA ARCHITECTURE
The proposed architecture is of single-ended cascade type
having good frequency response offered by common-gate
(CG), also high input resistance and transconductance
provided by common-source (CS) amplifier [2, 5] as shown in
Fig.3.
Fig.3. Inductively degenerated Interstage matched CS
cascade LNA.
3. International Journal of Research in Advent Technology, Vol.3, No.12, December 2015
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45
A. LNA DESIGN & INPUT MATCHING THEORY
Cascode architecture has been used to increase forward
gain while decreasing the reverse gain and providing
better isolation between input and output ports [5]. Inductive
source degeneration is used for input impedance matching and
improves stability. This also increases the stability of the LNA
through negative feedback at the expense of lower gain.
At resonance, the input resistance is [2]
Rin = Re [Zin] = GmLs/Cgs (6)
Indicating that the combination of the transistor with the
degeneration inductor provides input matching.
Also at this frequency,
ω2
(Lg+Ls) Cgs = 1 (7)
The gain of the LNA in Fig. is given by the following,
(VOUT/VIN) = (-Gm.s.Ld) / (1-ω2
Cgs(Lg+Ls) + s.Ls.Gm) (8)
And when substituting (7) into (8) will give
(VOUT/VIN) = (-Ld/Ls) (9)
Thus, Gain = 20 log (VOUT/VIN) dB (10)
This expression shows that the gain is the ratio of the
inductor at the drain to the inductor at the source. A high gain
can be achieved if Ld is made much higher than Ls. However,
there exist a trade-off between the size of Ld and the output
performance of the circuit due to the series resistance of the
inductor.
The initial stage was to determine the size of the transistor.
This was achieved by adopting the power constrained noise
optimization method which uses the following equation in
determining the width of M1 [1].
Wopt ≈ 1.5(ωoLCoxRsQin opt,PD)-1
(11)
Where, Wopt is the optimum width of the transistor having
the lowest noise figure (NF), L is the length of the transistor,
Cox is the oxide capacitance, Rs is the source (input) resistance
and Qin opt,PD is the input circuit quality factor which equals
to 4 as obtained from the derivation [2]. Wopt was then
calculated. Once width is known, M1’s transconductance and
Cgs can be calculated from the general equations for
MOSFETs in saturation.
Capacitance C1 is linked to terminals of M1 in order to
reduce value of input matching inductor Lg. Input match
condition for the desired band is obtained by utilizing
inductors Ls and Lg along with capacitor C2.
B. PRINCIPLE OF INTERSTAGE IMPEDANCE
MATCHING & REVERSE ISOLATION
The introduction of an interstage inductor enhances the
gain of the cascode LNA. Thus Lin serves as inter-stage
matching between drain of M1 and source of M2 i.e.
improve intermediate node power transfer. Also, the
reduction of Zin due to inclusion of Lin allows more
current to pump toward the M2. Therefore, the inter-stage
inductor LNA can provide more gain and less miller effect. It
will also help to improve the output matching. An inter-stage
inductor is thus added between the common- source and
common-gate stage. Because of good power transfer in the
common-gate stage, the overall noise figure will be
decreased [9].
It must be noted that with change in Lin, the
interstage inductor, the input impedance of M1 changes,
hence the input matching network must be readjusted to yield
50Ω impedance. The gain improvement with Lin can explain
intuitively. With increase in Lin increase the value of 'C';
that effectively reduces the value of 'F' and voltage gain
of amplifier improves with Lin.
Above analysis shows that, the interstage LNA can be
further enhanced by increasing the inductor value (Lin).
However, use of high value inductor is constrained by
the requirement of larger silicon area, limited quality
factor and low resonance frequency. The fully on-chip
realization of the circuit limits the maximum achievable
value of Lin. We thus choose Lin depending on the gain
requirement.
The presence of Lin enhances the effective
transconductance and effective Quality factor of the circuit.
As a result, noise performance improves. This improvement
is more pronounced if the inter-stage matching inductor is
off chip, thus avoiding large parasitic capacitance.
However for on chip realization of the inductor the noise
associated with the series resistance tends to cancel the
noise improvements and thus keeps the noise performance
unchanged. Also enhancing the Cgd feed-through causes
degradation of reverse isolation, implies decrease in LNA
stability due to mutual coupling. So inter-stage inductor
increases the gain but at the cost of lower stability factor.
M3and R1form a current mirror circuit with M1. R3
isolates the signal path from the biasing circuit and in this way
enforces the input signal to the LNA input. The value of R3 is
not critical as long as it is much greater than the input
impedance of the stage prior to it. In this work R3 is 2.5 kΩ
[2].
Typically, single transistor M1 is sufficient to provide
amplification. Adding M2 improves isolation and increases
the gain and as a consequence Noise Figure and linearity get
deteriorated. Stability of the circuit is determined by the
Stern’s stability factor which is given as:
4. International Journal of Research in Advent Technology, Vol.3, No.12, December 2015
E-ISSN: 2321-9637
Available online at www.ijrat.org
46
K = (1+│△│2
-│S11│2
-│S22│2
) / (2│S21││S12│) (12)
Where, = S11.S12-S21.S22
C. OUTPUT MATCHING THEORY
M4 lowers the local oscillator leakage produced by the
following mixer and improves the stability of the circuit by
minimizing the feedback from the output to the input [6]. An
analog output buffer is incorporated with the LNA to get a
better output matching response across all the frequency
bands. Ld and Cd provides output matching. Besides this, their
combination at resonance enables additional filtering to the
output. In addition to these, the voltage drop across the
inductor is contributed by its series resistance only and hence,
this configuration is very attractive for low power design.
4. LINEARIZATION OF THE PROPOSED LNA
Out of the available techniques for linearization of LNAs’
[10], techniques that target improvising IIP3 only are
Feedback, Optimal Biasing, Harmonic Termination, Feed-
forward, Derivative Superposition, etc. Every technique
targets the nonlinear Gm3 characteristics of MOS, and try to
fetch linearization at point when MOS swings from sub-
threshold to saturation region. Gm of MOS in saturation is
given as:
Gm = (∂Id/∂VGS) │VDS, constant (13)
Gm = µn Cox (W/L) (VGS-Vt) (14)
The linearity of the amplifier is measured by the
input-referred third-order intercept point (IIP3). The IIP3 is
inversely proportional to square of the effective Quality
factor of input tuning circuit. Hence the introduction of Lin
causes the linearity performance of the LNA to deteriorate.
IIP3 in terms of Gm1and Gm3is given as:
IIP3 = ((4│Gm1│)/ (3│ Gm3│)) 1/2
(15)
5. SIMULATION AND EXPERIMENTAL RESULTS
The proposed CMOS LNA has been simulated in 90nm
using TANNER and LTspice simulator. The Noise Figure of
LNA can be reduced by the following factors: (1) improving
the quality factor (Q) of the on-chip inductors as parasitic
parameters like eddy current loss, parasitic capacitance
induced by skin effect of inductor and thermal noise of
parasitic impedance of the circuit. (2) Channel noise factor γ
of short-channel MOS device is related to the biasing network;
(3) the thermal noise of gate resistance of MOSFET also
contributes to the output noise of the LNA. Much better
performance of the proposed architecture can be expected if
the design is implemented in advanced RF substrates. A
tradeoff is usually made between maximizing gain and
minimizing the noise figure. This is a great challenge in LNA
circuit design. This dilemma has been solved in my design.
Fig.4. Noise figure of the LNA (Minimum Noise Figure is
1.986 dB at 2.4 GHz).
Fig.5. Voltage magnitude (19.1dB) and Phase magnitude (deg)
at 2.4 GHz.
5. International Journal of Research in Advent Technology, Vol.3, No.12, December 2015
E-ISSN: 2321-9637
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47
6. CONCLUSION
This paper also shows the effect of inter-stage matching
and shows that the addition of the inter-stage matching
inductor increases gain. The cascode topology at the first stage
with source degeneration inductor and common-source (CS)
amplifier help to increase the gain. The proposed LNA is
suitable for high gain and high linearity Bluetooth receivers.
The design and implementation of 1.2V 90nm CMOS LNAs
has been presented. Experimental measurements have been
included, showing a competitive behaviour as compared with
the state-of-the art on narrowband LNAs. From the charts we
can seen that the LNA has sufficient gain along with the
noteworthy values of Noise Figure. IIP3 achieves optimize
value which is sufficiently enough to suppress unwanted third
order inter-modulations at the output of the LNA circuit.
Figure of Merit i.e. FoM for LNA circuits is given as:
FoM = (│S21│.BW) / ((NF-1).PDC) (16)
A comparison table show the comparison of different LNA
works formerly accomplished along with the work presented
in this paper. From the table we can easily observe that the
work carried out in this paper gives least value of noise figure
and also has comparatively superlative value of IIP3. In the
history of the sciences of developing technology, every
forward step requires a correct concept and diligent practice.
REFERENCES
[1] D.A. Johns and K. Martin, “Analog Integrated Circuit
Designs”, John Wiley & Sons. Inc., 1997.
[2] T.H. Lee, “The design of CMOS radio-frequency
integrated circuits”, Cambridge University Press, 1998.
[3] B. Razavi, “RF Microelectronics”, Prentice-Hall
International Editions, 1998.
[4] H. Hashemi and A. Hajimiri, “Concurrent multiband
low-noise amplifiers-theory, design, and applications”,
IEEE Trans. Microw. Theory Tech., Vol. 50, no. 1, pp.
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[5] D. Shaeffer and T. H. Lee, “Correction to A 1.5-V, 1.5-
GHz CMOS low noise amplifier”, IEEE J. Solid-State
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[6] S.A.Z. Murad; R.C. Ismail; M.N.M. Isa; M.F. Ahamd
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[7] B. Razavi, 2005, “Design of Analog CMOS Integrated
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[8] Ickjin Kwon and Hyungcheol Shin , “Design of a New
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[9] Hong-Sun Kim, Xiaopeng Li and Mohammed Ismail,
“A 2.4 GHz
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[10] Heng Zhang, Edgar Sànchez Sinencio, “Linearization
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[11] Laichun Yang, Yuexing Yan, “A High Gain Fully
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Application”, IEEE conference on Electron Devices and
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[12] E.C. Becerra-Alvarez, F. Sandoval-Ibarra, J.M. de la
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2009, Journal of Applied Research and Technology.
TABLE-I
PERFORMANCE SUMMARY OF THE PROPOSED
LNA AND COMPARISON WITH THE EXISTING
WORK
REFERENC
ES
Fr
eq.
Ra
ng
e
(G
Hz
)
Gai
n(d
B)
NF
(d
B)
IIP3
(dB
m)
Pdc
(m
W)
VD
D(
V)
Tech
nolo
gy
(CM
OS)
[4] 2.4
58
3
14 2.3 0 10 2.5 350n
m
[5] 1.5 - 3.5 12.7
o/p
7.5 1.5 600n
m
[6] 2.4 23.
9
5.6 -
11.1
8.1 1.2 130n
m
[9] 2.4
-
2.4
8
19 2.4 - 9 3 500n
m
[11] 2.4 22.
1
1.4
7
-8.1 11.1 1.8 180n
m
[12] 2.4
4
- 1.7
7
-0.6 25.3 1 90nm
This Work 2.4 19.
1
1.9
86
>-10 8 1.2 90nm