Original NPN Transistor 2SC4237 C4237 10A 1200V TO-247 New
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The document summarizes the specifications of the SavantIC Semiconductor 2SC4237 silicon NPN power transistor. It includes: 1) Key features such as a TO-247 package and use as a switching power transistor with a high breakdown voltage. 2) Pin descriptions and absolute maximum ratings for voltage, current, power dissipation and temperature. 3) Thermal characteristics and typical electrical characteristics including current gain, switching times and cutoff currents. 4) A diagram of the package outline and pin dimensions.
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- Maximum power dissipation of 1 watt at 25°C ambient temperature, derating to zero power at 100°C for both models
- Electrical characteristics such as saturation voltages, switching times, and thermal resistance are provided for each model.
2sc1172
This document provides specifications for the 2SC1172 planar silicon transistor, intended for use in color TV horizontal output applications without a damper diode. Key specifications include a high collector-base voltage rating of 1500V and high-speed switching capability. The document lists absolute maximum ratings and typical electrical characteristics, such as a collector cutoff current of 1.0mA, DC current gain of 100, and collector-emitter saturation voltage of 1.0V at 4A of collector current. It also provides contact information for the manufacturer.
Original IGBT IKB06N60T K06T60 06T60 06N60 6N60 TO-263 New Infineon
This document provides specifications for the IKB06N60T IGBT module. Key specifications include:
- Very low VCE(sat) of 1.5V typical
- Maximum junction temperature of 175°C
- Short circuit withstand time of 5μs
- Designed for applications such as washing machines, fans, pumps and vacuum cleaners
- Features TRENCHSTOPTM and fieldstop technology for 600V applications with tight parameters, high ruggedness and fast switching
Original IGBT IKA10N60T K10T60 10T60 600V 10A TO-220 New Infineon
This document summarizes the specifications of an IGBT module (IKA10N60T) with a trench gate structure and soft recovery diode. Key features include a low saturation voltage of 1.5V, short circuit withstand time of 5us, and maximum junction temperature of 175°C. Electrical characteristics are provided such as switching times and losses under various operating conditions. The module is qualified according to JEDEC standards and is suitable for applications such as washing machines, air conditioners, and inverters.
Original NPN Transistor STC403D STC403 403 TO-252 New AUK
This document provides specifications for an NPN silicon transistor called the STC403. It is intended for general purpose applications with features including low saturation voltage of 0.4V typical and high voltage rating of 60V minimum. The document provides information on ordering, pin connections, maximum ratings, electrical characteristics, and sample characteristic curves. It specifies parameters such as collector-emitter breakdown voltage, current gain, on/off voltages and times.
Original IGBT Transistor IHW25N1202R2 H25R1202 25A 1200V TO-247 New Infineon ...
This document provides specifications for the IHW25N120R2 reverse conducting IGBT module. Key details include:
- It has a 1200V blocking voltage and maximum current of 25A.
- Features include a low forward voltage body diode, trench and fieldstop technology for tight parameters, and NPT technology for easy parallel switching.
- Maximum ratings and thermal/switching characteristics are provided for different operating conditions.
- Applications include inductive cooking and soft switching applications.
Original Transistor NPN BD139 1.5A 80V TO-126 New
1. The document provides specifications for the BD135, BD137, and BD139 silicon NPN epitaxial transistors which are designed for medium power amplifier applications and complementary use with other transistors.
2. The maximum ratings table lists voltage, current, power, and temperature limits for the transistors, such as collector-base voltage up to 45V for the BD135.
3. Electrical characteristic graphs and tables show parameters like DC current gain, collector-emitter saturation voltage, and transition frequency, demonstrating the transistors' electrical performance.
Igbt 2 mbi600nt for boot
This document provides information on an IGBT module from the N series, including:
1) Its key features such as low saturation voltage, improved forward characteristics, and overcurrent limiting function.
2) Its applications in areas like motor controls and uninterruptible power supplies.
3) Its maximum ratings and electrical characteristics like collector-emitter saturation voltage and reverse recovery time.
4) A diagram of its equivalent circuit.
Original NPN Transistor 2SC4236 4236 6A 800V TO-247 New Shindengen
This document provides specifications for the SHINDENGEN 2SC4236 transistor, including:
1) Absolute maximum ratings such as a junction temperature of 150°C, collector current of 6A, and total transistor dissipation of 100W at 25°C.
2) Electrical characteristics at 25°C, such as a minimum DC current gain of 8 and maximum collector-emitter saturation voltage of 1V at 3A collector current.
3) Graphs showing characteristics like DC current gain, saturation voltage, and switching times over varying conditions like collector current, temperature, and voltages.
Original Transistor NPN MJE13003 KSE13003 E13003 13003 1.5A 400V TO-126 New
This document provides information on the MJE13003 NPN silicon transistor from Unisonic Technologies Co., Ltd. It describes the transistor as being designed for high-voltage, high-speed power switching in inductive circuits. Key features include a reverse biased safe operating area with inductive loads up to 1.5 amps and a typical fall time of 290ns at 1 amp and 100°C. The transistor has applications in switching regulators, inverters, motor controls, solenoid drivers, and deflection circuits. Electrical characteristics and maximum ratings are provided in tables and graphs.
2 sa1036
This document provides specifications for the 2SA1036 PNP silicon general purpose transistor. Key details include:
- It is rated for a maximum collector current of -500 mA and collector-emitter voltage of -40V.
- Electrical characteristics are provided like typical collector-emitter saturation voltage of -0.4V and DC current gain range of 82-390.
- Package information indicates it comes in the SOT-23 package and provides physical dimensions.
- The transistor is RoHS compliant and a suffix of "-C" indicates it is halogen and lead free.
Original MOSFET N-CHANNEL R5205CND R5205 5205 5A 30V TO-252 New
Original MOSFET N-CHANNEL R5205CND R5205 5205 5A 30V TO-252 New
https://authelectronic.com/original-mosfet-n-channel-r5205cnd-r5205-5205-5a-30v-to-252-new
Acs712 datasheet
The ACS712 is a fully integrated, Hall effect-based linear current sensor IC that provides precise current sensing with 2.1 kVRMS isolation. It outputs an analog voltage signal linearly proportional to the primary sampled current. Key features include low noise, 80 kHz bandwidth, 1.5% accuracy, and isolation from the current path. It is offered in models optimized for currents of ±5A, ±20A, and ±30A and is packaged in a small SOIC8 package.
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Original Transistor NPN TIP35C TIP35 TO-247 25A 100V New ST
Original IGBT IKB06N60T K06T60 06T60 06N60 6N60 TO-263 New Infineon
Original IGBT IKB06N60T K06T60 06T60 06N60 6N60 TO-263 New Infineon
Original IGBT IKA10N60T K10T60 10T60 600V 10A TO-220 New Infineon
Original IGBT IKA10N60T K10T60 10T60 600V 10A TO-220 New Infineon
Original NPN Transistor STC403D STC403 403 TO-252 New AUK
Original NPN Transistor STC403D STC403 403 TO-252 New AUK
Original IGBT Transistor IHW25N1202R2 H25R1202 25A 1200V TO-247 New Infineon ...
Original IGBT Transistor IHW25N1202R2 H25R1202 25A 1200V TO-247 New Infineon ...
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Original Transistor NPN MJE13003 KSE13003 E13003 13003 1.5A 400V TO-126 New
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原版制作(Humboldt毕业证书)柏林大学毕业证学位证一模一样
原件一模一样【微信：bwp0011】《(Humboldt毕业证书)柏林大学毕业证学位证》【微信：bwp0011】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原。
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问微bwp0011
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三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
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◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
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DEEP LEARNING FOR SMART GRID INTRUSION DETECTION: A HYBRID CNN-LSTM-BASED MODEL
As digital technology becomes more deeply embedded in power systems, protecting the communication
networks of Smart Grids (SG) has emerged as a critical concern. Distributed Network Protocol 3 (DNP3)
represents a multi-tiered application layer protocol extensively utilized in Supervisory Control and Data
Acquisition (SCADA)-based smart grids to facilitate real-time data gathering and control functionalities.
Robust Intrusion Detection Systems (IDS) are necessary for early threat detection and mitigation because
of the interconnection of these networks, which makes them vulnerable to a variety of cyberattacks. To
solve this issue, this paper develops a hybrid Deep Learning (DL) model specifically designed for intrusion
detection in smart grids. The proposed approach is a combination of the Convolutional Neural Network
(CNN) and the Long-Short-Term Memory algorithms (LSTM). We employed a recent intrusion detection
dataset (DNP3), which focuses on unauthorized commands and Denial of Service (DoS) cyberattacks, to
train and test our model. The results of our experiments show that our CNN-LSTM method is much better
at finding smart grid intrusions than other deep learning algorithms used for classification. In addition,
our proposed approach improves accuracy, precision, recall, and F1 score, achieving a high detection
accuracy rate of 99.50%.
一比一原版(osu毕业证书)美国俄勒冈州立大学毕业证如何办理
原版一模一样【微信：741003700 】【(osu毕业证书)美国俄勒冈州立大学毕业证成绩单】【微信：741003700 】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原。
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问Q/微741003700
【主营项目】
一.毕业证【q微741003700】成绩单、使馆认证、教育部认证、雅思托福成绩单、学生卡等！
二.真实使馆公证(即留学回国人员证明,不成功不收费)
三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
四.办理各国各大学文凭(一对一专业服务,可全程监控跟踪进度)
如果您处于以下几种情况：
◇在校期间，因各种原因未能顺利毕业……拿不到官方毕业证【q/微741003700】
◇面对父母的压力，希望尽快拿到；
◇不清楚认证流程以及材料该如何准备；
◇回国时间很长，忘记办理；
◇回国马上就要找工作，办给用人单位看；
◇企事业单位必须要求办理的
◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】外观非常简单，由纸质材料制成，上面印有校徽、校名、毕业生姓名、专业等信息。
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】格式相对统一，各专业都有相应的模板。通常包括以下部分：
校徽：象征着学校的荣誉和传承。
校名:学校英文全称
授予学位：本部分将注明获得的具体学位名称。
毕业生姓名：这是最重要的信息之一，标志着该证书是由特定人员获得的。
颁发日期：这是毕业正式生效的时间，也代表着毕业生学业的结束。
其他信息：根据不同的专业和学位，可能会有一些特定的信息或章节。
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】价值很高，需要妥善保管。一般来说，应放置在安全、干燥、防潮的地方，避免长时间暴露在阳光下。如需使用，最好使用复印件而不是原件，以免丢失。
综上所述，办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】是证明身份和学历的高价值文件。外观简单庄重，格式统一，包括重要的个人信息和发布日期。对持有人来说，妥善保管是非常重要的。
Comparative analysis between traditional aquaponics and reconstructed aquapon...
The aquaponic system of planting is a method that does not require soil usage. It is a method that only needs water, fish, lava rocks (a substitute for soil), and plants. Aquaponic systems are sustainable and environmentally friendly. Its use not only helps to plant in small spaces but also helps reduce artificial chemical use and minimizes excess water use, as aquaponics consumes 90% less water than soil-based gardening. The study applied a descriptive and experimental design to assess and compare conventional and reconstructed aquaponic methods for reproducing tomatoes. The researchers created an observation checklist to determine the significant factors of the study. The study aims to determine the significant difference between traditional aquaponics and reconstructed aquaponics systems propagating tomatoes in terms of height, weight, girth, and number of fruits. The reconstructed aquaponics system’s higher growth yield results in a much more nourished crop than the traditional aquaponics system. It is superior in its number of fruits, height, weight, and girth measurement. Moreover, the reconstructed aquaponics system is proven to eliminate all the hindrances present in the traditional aquaponics system, which are overcrowding of fish, algae growth, pest problems, contaminated water, and dead fish.
Object Oriented Analysis and Design - OOAD
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Data Driven Maintenance | UReason Webinar
Discover the latest insights on Data Driven Maintenance with our comprehensive webinar presentation. Learn about traditional maintenance challenges, the right approach to utilizing data, and the benefits of adopting a Data Driven Maintenance strategy. Explore real-world examples, industry best practices, and innovative solutions like FMECA and the D3M model. This presentation, led by expert Jules Oudmans, is essential for asset owners looking to optimize their maintenance processes and leverage digital technologies for improved efficiency and performance. Download now to stay ahead in the evolving maintenance landscape.
Prediction of Electrical Energy Efficiency Using Information on Consumer's Ac...
Energy efficiency has been important since the latter part of the last century. The main object of this survey is to determine the energy efficiency knowledge among consumers. Two separate districts in Bangladesh are selected to conduct the survey on households and showrooms about the energy and seller also. The survey uses the data to find some regression equations from which it is easy to predict energy efficiency knowledge. The data is analyzed and calculated based on five important criteria. The initial target was to find some factors that help predict a person's energy efficiency knowledge. From the survey, it is found that the energy efficiency awareness among the people of our country is very low. Relationships between household energy use behaviors are estimated using a unique dataset of about 40 households and 20 showrooms in Bangladesh's Chapainawabganj and Bagerhat districts. Knowledge of energy consumption and energy efficiency technology options is found to be associated with household use of energy conservation practices. Household characteristics also influence household energy use behavior. Younger household cohorts are more likely to adopt energy-efficient technologies and energy conservation practices and place primary importance on energy saving for environmental reasons. Education also influences attitudes toward energy conservation in Bangladesh. Low-education households indicate they primarily save electricity for the environment while high-education households indicate they are motivated by environmental concerns.
Redefining brain tumor segmentation: a cutting-edge convolutional neural netw...
Medical image analysis has witnessed significant advancements with deep learning techniques. In the domain of brain tumor segmentation, the ability to
precisely delineate tumor boundaries from magnetic resonance imaging (MRI)
scans holds profound implications for diagnosis. This study presents an ensemble convolutional neural network (CNN) with transfer learning, integrating
the state-of-the-art Deeplabv3+ architecture with the ResNet18 backbone. The
model is rigorously trained and evaluated, exhibiting remarkable performance
metrics, including an impressive global accuracy of 99.286%, a high-class accuracy of 82.191%, a mean intersection over union (IoU) of 79.900%, a weighted
IoU of 98.620%, and a Boundary F1 (BF) score of 83.303%. Notably, a detailed comparative analysis with existing methods showcases the superiority of
our proposed model. These findings underscore the model’s competence in precise brain tumor localization, underscoring its potential to revolutionize medical
image analysis and enhance healthcare outcomes. This research paves the way
for future exploration and optimization of advanced CNN models in medical
imaging, emphasizing addressing false positives and resource efficiency.
2008 BUILDING CONSTRUCTION Illustrated - Ching Chapter 08 Doors and Windows.pdf
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Embedded machine learning-based road conditions and driving behavior monitoring
Car accident rates have increased in recent years, resulting in losses in human lives, properties, and other financial costs. An embedded machine learning-based system is developed to address this critical issue. The system can monitor road conditions, detect driving patterns, and identify aggressive driving behaviors. The system is based on neural networks trained on a comprehensive dataset of driving events, driving styles, and road conditions. The system effectively detects potential risks and helps mitigate the frequency and impact of accidents. The primary goal is to ensure the safety of drivers and vehicles. Collecting data involved gathering information on three key road events: normal street and normal drive, speed bumps, circular yellow speed bumps, and three aggressive driving actions: sudden start, sudden stop, and sudden entry. The gathered data is processed and analyzed using a machine learning system designed for limited power and memory devices. The developed system resulted in 91.9% accuracy, 93.6% precision, and 92% recall. The achieved inference time on an Arduino Nano 33 BLE Sense with a 32-bit CPU running at 64 MHz is 34 ms and requires 2.6 kB peak RAM and 139.9 kB program flash memory, making it suitable for resource-constrained embedded systems.
Rainfall intensity duration frequency curve statistical analysis and modeling...
Using data from 41 years in Patna’ India’ the study’s goal is to analyze the trends of how often it rains on a weekly, seasonal, and annual basis (1981−2020). First, utilizing the intensity-duration-frequency (IDF) curve and the relationship by statistically analyzing rainfall’ the historical rainfall data set for Patna’ India’ during a 41 year period (1981−2020), was evaluated for its quality. Changes in the hydrologic cycle as a result of increased greenhouse gas emissions are expected to induce variations in the intensity, length, and frequency of precipitation events. One strategy to lessen vulnerability is to quantify probable changes and adapt to them. Techniques such as log-normal, normal, and Gumbel are used (EV-I). Distributions were created with durations of 1, 2, 3, 6, and 24 h and return times of 2, 5, 10, 25, and 100 years. There were also mathematical correlations discovered between rainfall and recurrence interval.
Findings: Based on findings, the Gumbel approach produced the highest intensity values, whereas the other approaches produced values that were close to each other. The data indicates that 461.9 mm of rain fell during the monsoon season’s 301st week. However, it was found that the 29th week had the greatest average rainfall, 92.6 mm. With 952.6 mm on average, the monsoon season saw the highest rainfall. Calculations revealed that the yearly rainfall averaged 1171.1 mm. Using Weibull’s method, the study was subsequently expanded to examine rainfall distribution at different recurrence intervals of 2, 5, 10, and 25 years. Rainfall and recurrence interval mathematical correlations were also developed. Further regression analysis revealed that short wave irrigation, wind direction, wind speed, pressure, relative humidity, and temperature all had a substantial influence on rainfall.
Originality and value: The results of the rainfall IDF curves can provide useful information to policymakers in making appropriate decisions in managing and minimizing floods in the study area.
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- 1. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4237 DESCRIPTION ··With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 10 A ICM Collector current-Peak 20 A IB Base current 4 A IBM Base current-Peak 8 A PD Total power dissipation TC=25 150 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 0.83 /W Fig.1 simplified outline (TO-247) and symbol
- 2. SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4237 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage 0.1 mA IEBO Emitter cut-off current At rated voltage 0.1 mA hFE-1 DC current gain IC=5A ; VCE=5V 8 hFE-2 DC current gain IC=1mA ; VCE=5V 5 fT Transition frequency IC=1A ; VCE=10V 8 MHz Switching times resistive load ton Turn-on time 0.5 µs ts Storage time 3.5 µs tf Fall time IC=5A IB1=1A; IB2=2A VBB2=4V ,RL=50B 0.3 µs
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