2 sa1036
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This document provides specifications for the 2SA1036 PNP silicon general purpose transistor. Key details include: - It is rated for a maximum collector current of -500 mA and collector-emitter voltage of -40V. - Electrical characteristics are provided like typical collector-emitter saturation voltage of -0.4V and DC current gain range of 82-390. - Package information indicates it comes in the SOT-23 package and provides physical dimensions. - The transistor is RoHS compliant and a suffix of "-C" indicates it is halogen and lead free.
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The document provides design details for a critical conduction mode power factor correction (PFC) circuit using the TB6819AFG controller IC. It includes the application circuit, design specifications, equations for determining component values like the output inductor L1, input capacitor C1, and output capacitor C2. It also describes the use of time scaling to speed up transient simulations and modeling of the common mode choke coil. The steps outlined include selecting the output voltage and feedback circuit, output capacitor, inductance L1, input capacitor C4, auxiliary winding L2, and circuits for current detection and zero current detection.
ACPL-K49T - Datasheet - Broadcom Corporation
This data sheet provides specifications for the Broadcom ACPL-K49T 20-kBd digital optocoupler. It is designed for automotive applications with a wide operating temperature range of -40°C to +125°C. The optocoupler provides electrical insulation between input and output connections using an LED and integrated photodetector. It has high common-mode rejection up to 30 kV/μs and low propagation delays under 20 μs. The device is available in either a 4-pin or 5-pin configuration and packaged in a compact SO8 package.
2sc1172
This document provides specifications for the 2SC1172 planar silicon transistor, intended for use in color TV horizontal output applications without a damper diode. Key specifications include a high collector-base voltage rating of 1500V and high-speed switching capability. The document lists absolute maximum ratings and typical electrical characteristics, such as a collector cutoff current of 1.0mA, DC current gain of 100, and collector-emitter saturation voltage of 1.0V at 4A of collector current. It also provides contact information for the manufacturer.
Critical Conduction Mode (CRM) PFC Circuit
The document provides design specifications and steps for a critical conduction mode power factor correction (PFC) circuit. It includes an application circuit diagram using a TB6819AFG controller IC along with component values and equations. Time scaling is used to speed up transient simulations in SPICE. Key steps explained are selecting the output voltage and feedback resistors, output capacitor, inductor, input capacitor, auxiliary winding, and circuits for current and zero current detection.
Original PNP Transistor BC557C C557C 557 TO-92 New
This document provides specifications for PNP silicon amplifier transistors, models BC556B, BC557A/B/C, and BC558B. It includes maximum ratings, electrical characteristics, thermal characteristics, and ordering information. The maximum ratings section outlines voltage and current limits. The electrical characteristics section provides typical values for parameters like current gain, saturation and on voltages, bandwidth, and more. Graphs illustrate characteristics like gain vs. current and capacitance vs. voltage. Thermal characteristics include junction temperature range and thermal resistances. The ordering information lists available package and shipping options.
Original PNP Transistor BC556BG 556B BC556B BC556 556 TO-92 New
This document provides specifications for PNP silicon amplifier transistors, models BC556B, BC557A/B/C, and BC558B. It includes maximum ratings, electrical characteristics, thermal characteristics, and ordering information. The maximum ratings section outlines voltage and current limits. The electrical characteristics section provides typical values for parameters like current gain, saturation and on voltages, bandwidth, and capacitances at different operating conditions. Graphs illustrate characteristics like gain and safe operating area. The document also provides thermal resistance specifications and ordering options by package type.
2 n2222a motorola
This document provides specifications for four NPN bipolar junction transistors: the 2N2219, 2N2219A, 2N2222, and 2N2222A. It includes maximum ratings, electrical characteristics at 25°C, thermal characteristics, and switching time characteristics. The electrical characteristics section provides details on parameters like current gain, saturation voltages, capacitances, and more. Graphs illustrate relationships between various parameters over a range of collector currents. The document specifies performance values and operating conditions for these general purpose transistors.
2N2905-2N2907 Transistor data sheet
This document provides specifications for the 2N2905 and 2N2907 silicon planar epitaxial PNP transistors. The 2N2905 is housed in a JEDEC TO-39 metal case and the 2N2907 is in a JEDEC TO-18 metal case. Both transistors are designed for high-speed saturated switching and general purpose applications. The document includes maximum ratings, thermal characteristics, electrical characteristics under pulsed test conditions, and mechanical dimension drawings for each package type.
Original PNP Transistors PZT2907A PZT2907 2907 P2F SOT22-3 New On Semiconductor
This document provides information on three general purpose transistors - the PN2907A, MMBT2907A, and PZT2907A. It describes their key electrical and thermal characteristics such as current gain range, maximum ratings, and package options. Diagrams of their physical dimensions and typical performance curves are also included. The transistors are designed for use as amplifiers or switches in applications requiring up to 500mA of current.
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一比一原版(osu毕业证书)美国俄勒冈州立大学毕业证如何办理
原版一模一样【微信：741003700 】【(osu毕业证书)美国俄勒冈州立大学毕业证成绩单】【微信：741003700 】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原。
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问Q/微741003700
【主营项目】
一.毕业证【q微741003700】成绩单、使馆认证、教育部认证、雅思托福成绩单、学生卡等！
二.真实使馆公证(即留学回国人员证明,不成功不收费)
三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
四.办理各国各大学文凭(一对一专业服务,可全程监控跟踪进度)
如果您处于以下几种情况：
◇在校期间，因各种原因未能顺利毕业……拿不到官方毕业证【q/微741003700】
◇面对父母的压力，希望尽快拿到；
◇不清楚认证流程以及材料该如何准备；
◇回国时间很长，忘记办理；
◇回国马上就要找工作，办给用人单位看；
◇企事业单位必须要求办理的
◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】外观非常简单，由纸质材料制成，上面印有校徽、校名、毕业生姓名、专业等信息。
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】格式相对统一，各专业都有相应的模板。通常包括以下部分：
校徽：象征着学校的荣誉和传承。
校名:学校英文全称
授予学位：本部分将注明获得的具体学位名称。
毕业生姓名：这是最重要的信息之一，标志着该证书是由特定人员获得的。
颁发日期：这是毕业正式生效的时间，也代表着毕业生学业的结束。
其他信息：根据不同的专业和学位，可能会有一些特定的信息或章节。
办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】价值很高，需要妥善保管。一般来说，应放置在安全、干燥、防潮的地方，避免长时间暴露在阳光下。如需使用，最好使用复印件而不是原件，以免丢失。
综上所述，办理(osu毕业证书)美国俄勒冈州立大学毕业证【微信：741003700 】是证明身份和学历的高价值文件。外观简单庄重，格式统一，包括重要的个人信息和发布日期。对持有人来说，妥善保管是非常重要的。
Applications of artificial Intelligence in Mechanical Engineering.pdf
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
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学校原版美国波士顿大学毕业证学历学位证书原版一模一样
原版一模一样【微信：741003700 】【美国波士顿大学毕业证学历学位证书】【微信：741003700 】学位证，留信认证（真实可查，永久存档）offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原海外各大学 Bachelor Diploma degree, Master Degree Diploma
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留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
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2 sa1036
- 1. Elektronische Bauelemente 2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor 31-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES IC Max.= -500 mA Low VCE(sat). Ideal for low-voltage operation. CLASSIFICATION OF hFE Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R Range 82~180 120~270 180~390 Marking HP HQ HR PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V Collector Currrent IC -500 mA Total Power Dissipation PD 150 mW Junction & Storage Temperature TJ, TSTG 150, -55 ~ 150 ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base breakdown voltage V(BR)CBO -40 - - V IC=-100μA, IE=0 Collector-emitter breakdown voltage V(BR)CEO -32 - - V IC=-1mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -5 - - V IE=-100μA, IC=0 Collector cut-off current ICBO - - -1 μA VCB=-20V, IE=0 Emitter cut-off current IEBO - - -1 μA VEB= -4V, IC=0 Collector-emitter saturation voltage VCE(sat) - - -0.4 V IC=-100mA, IB=-10mA DC current gain hFE 82 - 390 VCE=-3V, IC=-10mA Transition frequency fT - 200 - MHz VCE=-5V, IC=-20mA, f=100MHz Collector output capacitance COB - 7 - pF VCB=-10V, IE=0, f=1MHz Top View A L C B D G H JF K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 SOT-23
- 2. Elektronische Bauelemente 2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor 31-Dec-2010 Rev. B Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES