This document contains technical specifications for 3 bipolar junction transistors: 1) The Motorola BC546 transistor has a maximum collector-emitter voltage of 65V and beta range not specified. 2) The Motorola BC547 transistor has a maximum collector-emitter voltage of 45V and beta range not specified. 3) The Motorola BC548 transistor has a maximum collector-emitter voltage of 30V and beta range not specified.

1. UNIVERSIDAD FERMÍN TORO
VICERRECTORADO ACADÉMICO
FACULTAD DE INGENIERÍA
NÚCLEO BARQUISIMETO
Elaborado: Oswaldo R. Pérez Montilla
C.I.: 17305581
Tutor: Ing. Elvis Madrid
Sección: SAIA
Catedra: Lab. Electrónica I
Cabudare, Febrero 2015

5. 5. Investigue 3 hojas técnicas de transistor de unión bipolar y determine Beta (hFE) y límites de operación.

6. 1Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol
BC
546
BC
547
BC
548 Unit
Collector–Emitter Voltage VCEO 65 45 30 Vdc
Collector–Base Voltage VCBO 80 50 30 Vdc
Emitter–Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD 625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Watt
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R JA 200 °C/W
Thermal Resistance, Junction to Case R JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC546
(IC = 1.0 mA, IB = 0) BC547
BC548
V(BR)CEO 65
45
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage BC546
(IC = 100 mAdc) BC547
BC548
V(BR)CBO 80
50
30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage BC546
(IE = 10 A, IC = 0) BC547
BC548
V(BR)EBO 6.0
6.0
6.0
—
—
—
—
—
—
V
Collector Cutoff Current
(VCE = 70 V, VBE = 0) BC546
(VCE = 50 V, VBE = 0) BC547
(VCE = 35 V, VBE = 0) BC548
(VCE = 30 V, TA = 125°C) BC546/547/548
ICES
—
—
—
—
0.2
0.2
0.2
—
15
15
15
4.0
nA
mA
Order this document
by BC546/DSEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
ã Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
REV 1

7. 1Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC 200 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD 625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS*
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R JA 200 °C/W
Thermal Resistance, Junction to Case R JC 83.3 °C/W
* Indicates Data in addition to JEDEC Requirements.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO 40 — Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO 60 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IC = 0)
V(BR)EBO 6.0 — Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL — 50 nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX — 50 nAdc
1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N3903/DSEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
ã Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
REV 2