Original NPN Transistor 2SD718 D718 8A 120V TO-3P New KEC
•
0 likes•421 views
The SavantIC Semiconductor Product Specification document provides information about the 2SD718 silicon NPN power transistor. The transistor is in a TO-3P(I) package and is recommended for 45-50W audio frequency amplifier output stage applications. It has absolute maximum ratings of 120V for collector-base voltage and collector-emitter voltage. Typical characteristics include a current gain of 55-160 at 1A collector current and 5V collector-emitter voltage.
Report
Share
Report
Share
Download to read offline
Recommended
R6 La Rinconada 190223.pdf
Cortesía de @OficialINH, presentamos el programa oficial correspondiente a la reunión N° 6 a celebrarse el sábado 19 de febrero de 2023 en el hipódromo nacional La Rinconada, Caracas, Venezuela.
Metal-Semiconductor Contact
This document discusses metal-semiconductor contacts and the electrical characteristics of Schottky diodes. It describes how metal-semiconductor contacts are classified based on the work function difference between the metal and semiconductor, and whether they form Schottky or Ohmic contacts. It then provides details on the Poisson equation used to model Schottky diodes and derive expressions for key parameters like built-in potential, space-charge width, maximum electric field, and junction capacitance. Finally, it discusses how the Schottky barrier height can be lowered due to image force effects.
Q-V characteristics of MOS Capacitor
This document discusses the charge-potential characteristics of a metal-oxide-semiconductor (MOS) capacitor. It defines band bending and presents the mathematical equations that describe the Poisson equation and charge variation in the MOS structure. Graphs are shown to represent the charge profile in different regimes like accumulation, depletion, weak inversion and strong inversion based on the applied gate voltage. The surface electric field and surface charge are also derived from the Poisson equation and Gauss' law.
MEMRISTOR vlsi ppt
This document introduces memristors, a fourth fundamental circuit element theorized in 1971 and first realized in 2008. It provides a brief history of memristors including Leon Chua's theoretical discovery and HP Labs' creation of the first physical memristor. The document defines memristors as having a resistance that depends on the amount of charge that has previously flowed through the circuit. It describes the titanium dioxide-based memristor developed by HP Labs and provides equations for memristor resistance. Potential applications of memristors include use as switches, non-volatile memory, logical operations, and neural networks. Benefits over other technologies include faster switching, smaller size, longer life, and lower energy usage.
Fermi Level
This document discusses the position of the Fermi level in intrinsic and extrinsic semiconductors. It begins by defining the intrinsic Fermi level position in an intrinsic semiconductor. It then describes how the Fermi level shifts in n-type and p-type extrinsic semiconductors due to the introduction of donor and acceptor dopants. Equations are provided for calculating the intrinsic carrier concentration and extrinsic carrier concentrations in n-type and p-type materials.
Masa de maiz
Este documento presenta una revisión de conceptos, métodos de medición y características reológicas y texturales aplicadas al estudio de las masas elaboradas a partir de trigo y maíz. Explica que las masas de trigo y maíz son sistemas viscoelásticos cuya estructura y propiedades dependen de factores como su composición, condiciones del proceso y la interacción entre sus componentes. También resume diferentes métodos para medir propiedades reológicas y texturales como la pegajosidad, y cómo estas
Orignal PNP Transistor 2SB861 B861 861 TO-220 New
The 2SB861 is a silicon PNP power transistor in a TO-220C package. It is intended for use as a low frequency power amplifier in color TV vertical deflection circuits. It has absolute maximum ratings of -200V for collector-base voltage, -150V for collector-emitter voltage, and -6V for emitter-base voltage. Typical characteristics include a collector-emitter saturation voltage of -3.0V at -0.5A collector current and a DC current gain of 60 to 200 at -50mA collector current.
2sd 1351 datasheet
The 2SD1351 is a silicon NPN power transistor from SavantIC Semiconductor with a TO-220C package. It has a low collector saturation voltage of 0.25-1.0V and is intended for general purpose applications. The transistor has absolute maximum ratings of 60V for collector-base and collector-emitter voltages, 7V for emitter-base voltage, 3A for collector current, and 0.5A for base current. Key characteristics include a collector-emitter breakdown voltage of 60V minimum, DC current gain of 60-300, and transition frequency of 3.0MHz.
Recommended
R6 La Rinconada 190223.pdf
Cortesía de @OficialINH, presentamos el programa oficial correspondiente a la reunión N° 6 a celebrarse el sábado 19 de febrero de 2023 en el hipódromo nacional La Rinconada, Caracas, Venezuela.
Metal-Semiconductor Contact
This document discusses metal-semiconductor contacts and the electrical characteristics of Schottky diodes. It describes how metal-semiconductor contacts are classified based on the work function difference between the metal and semiconductor, and whether they form Schottky or Ohmic contacts. It then provides details on the Poisson equation used to model Schottky diodes and derive expressions for key parameters like built-in potential, space-charge width, maximum electric field, and junction capacitance. Finally, it discusses how the Schottky barrier height can be lowered due to image force effects.
Q-V characteristics of MOS Capacitor
This document discusses the charge-potential characteristics of a metal-oxide-semiconductor (MOS) capacitor. It defines band bending and presents the mathematical equations that describe the Poisson equation and charge variation in the MOS structure. Graphs are shown to represent the charge profile in different regimes like accumulation, depletion, weak inversion and strong inversion based on the applied gate voltage. The surface electric field and surface charge are also derived from the Poisson equation and Gauss' law.
MEMRISTOR vlsi ppt
This document introduces memristors, a fourth fundamental circuit element theorized in 1971 and first realized in 2008. It provides a brief history of memristors including Leon Chua's theoretical discovery and HP Labs' creation of the first physical memristor. The document defines memristors as having a resistance that depends on the amount of charge that has previously flowed through the circuit. It describes the titanium dioxide-based memristor developed by HP Labs and provides equations for memristor resistance. Potential applications of memristors include use as switches, non-volatile memory, logical operations, and neural networks. Benefits over other technologies include faster switching, smaller size, longer life, and lower energy usage.
Fermi Level
This document discusses the position of the Fermi level in intrinsic and extrinsic semiconductors. It begins by defining the intrinsic Fermi level position in an intrinsic semiconductor. It then describes how the Fermi level shifts in n-type and p-type extrinsic semiconductors due to the introduction of donor and acceptor dopants. Equations are provided for calculating the intrinsic carrier concentration and extrinsic carrier concentrations in n-type and p-type materials.
Masa de maiz
Este documento presenta una revisión de conceptos, métodos de medición y características reológicas y texturales aplicadas al estudio de las masas elaboradas a partir de trigo y maíz. Explica que las masas de trigo y maíz son sistemas viscoelásticos cuya estructura y propiedades dependen de factores como su composición, condiciones del proceso y la interacción entre sus componentes. También resume diferentes métodos para medir propiedades reológicas y texturales como la pegajosidad, y cómo estas
Orignal PNP Transistor 2SB861 B861 861 TO-220 New
The 2SB861 is a silicon PNP power transistor in a TO-220C package. It is intended for use as a low frequency power amplifier in color TV vertical deflection circuits. It has absolute maximum ratings of -200V for collector-base voltage, -150V for collector-emitter voltage, and -6V for emitter-base voltage. Typical characteristics include a collector-emitter saturation voltage of -3.0V at -0.5A collector current and a DC current gain of 60 to 200 at -50mA collector current.
2sd 1351 datasheet
The 2SD1351 is a silicon NPN power transistor from SavantIC Semiconductor with a TO-220C package. It has a low collector saturation voltage of 0.25-1.0V and is intended for general purpose applications. The transistor has absolute maximum ratings of 60V for collector-base and collector-emitter voltages, 7V for emitter-base voltage, 3A for collector current, and 0.5A for base current. Key characteristics include a collector-emitter breakdown voltage of 60V minimum, DC current gain of 60-300, and transition frequency of 3.0MHz.
Original NPN Transistor 2SC4237 C4237 10A 1200V TO-247 New
The document summarizes the specifications of the SavantIC Semiconductor 2SC4237 silicon NPN power transistor. It includes:
1) Key features such as a TO-247 package and use as a switching power transistor with a high breakdown voltage.
2) Pin descriptions and absolute maximum ratings for voltage, current, power dissipation and temperature.
3) Thermal characteristics and typical electrical characteristics including current gain, switching times and cutoff currents.
4) A diagram of the package outline and pin dimensions.
D882 npn
This document provides specifications for an NPN transistor. It lists maximum ratings such as collector-base voltage of 40V and collector current of 3A. It also gives electrical characteristics including a collector-emitter breakdown voltage of 30V, DC current gain of 60-400, and transition frequency of 50MHz. Finally, it shows the transistor packaging is a TO-126 case and classifies the DC current gain range.
2 sa1036
This document provides specifications for the 2SA1036 PNP silicon general purpose transistor. Key details include:
- It is rated for a maximum collector current of -500 mA and collector-emitter voltage of -40V.
- Electrical characteristics are provided like typical collector-emitter saturation voltage of -0.4V and DC current gain range of 82-390.
- Package information indicates it comes in the SOT-23 package and provides physical dimensions.
- The transistor is RoHS compliant and a suffix of "-C" indicates it is halogen and lead free.
Original NPN Transistor STC403D STC403 403 TO-252 New AUK
This document provides specifications for an NPN silicon transistor called the STC403. It is intended for general purpose applications with features including low saturation voltage of 0.4V typical and high voltage rating of 60V minimum. The document provides information on ordering, pin connections, maximum ratings, electrical characteristics, and sample characteristic curves. It specifies parameters such as collector-emitter breakdown voltage, current gain, on/off voltages and times.
Original Transistor NPN TIP35C TIP35 TO-247 25A 100V New ST
This document provides specifications for a TIP35C NPN planar silicon transistor that can be used for audio power amplification and DC to DC conversion. It lists the transistor's maximum ratings including collector-base voltage, collector-emitter voltage, and collector current. The document also provides its typical electrical characteristics such as collector-base breakdown voltage, collector-emitter breakdown voltage, DC current gain, and collector-emitter saturation voltage.
Original Transistor PNP KTA1266-Y A1266 1266 TO-92 New
This document provides specifications for the KTA1266 PNP plastic encapsulated transistor. It includes:
- Electrical ratings such as collector-base voltage of -50V and collector current of -150mA.
- Electrical characteristics including DC current gain ranges from 70-400, collector-emitter saturation voltage below -0.3V, and transition frequency above 80MHz.
- Packaging information noting the transistor uses a TO-92 package.
000704
The AN7164N is an integrated circuit designed for high power audio amplification. It provides 47W of output power with low distortion and noise. It incorporates protection circuits to ensure reliability, including overcurrent, overheating, load short, and output ground short protections. The IC features a standby mode that allows powering on and off without noise even when power is continuously supplied.
Original NPN Transistor 2SC3199 C3199 3199 TO-92 New Secos
This document provides specifications for the 2SC3199 NPN plastic-encapsulated transistor. It can handle currents up to 0.15 amps and voltages up to 50 volts. The transistor has a high current capability and gain, and is packaged small. It is suitable for applications such as audio amplifiers and AM amplifiers. Electrical characteristics including breakdown voltages, current gains, saturation voltages and frequencies are provided. Physical dimension specifications and characteristic curves are also included.
Origimal Transistor PNP 2SB649AC B649AC B649 TO-126 120V 1.5A New UNISONIC TE...
This document provides information on the 2SB649/A PNP silicon transistor from Unisonic Technologies Co., including:
- Applications include low frequency power amplifiers paired with the 2SB669/A transistor.
- It provides ordering information, listing available package types and lead plating options.
- Absolute maximum and electrical characteristic ratings are provided for parameters like voltage, current, and temperature.
- Typical characteristics graphs show properties like gain, saturation voltage, and output capacitance over varying conditions.
- A safe operating area graph shows maximum voltage and current ranges.
Original Transistor PNP A1266 2SA1266 TO 92 New
The document summarizes the specifications and characteristics of the ST 2SA1266 PNP silicon epitaxial planar transistor. The transistor is classified into three groups - O, Y, and G - according to its DC current gain and can be manufactured in different pin configurations upon special request. Key specifications include an absolute maximum collector current of 150mA, DC current gain ranges from 70-400 depending on the group, and characteristics such as a collector-emitter saturation voltage below 0.3V and transition frequency above 80MHz. The transistor comes in a TO-92 plastic package.
Original NPN Transistor LBC817 BC817 6C SMD Code 500mA 45V SOT23
This document provides specifications for general purpose transistors. It lists maximum ratings including collector-emitter and collector-base voltages. It also gives thermal characteristics such as total device dissipation and thermal resistance. Electrical characteristics are provided including DC current gain, collector-emitter saturation voltage, and current-gain bandwidth product. Finally, the document includes device marking, ordering information, and pinout/package diagrams.
D1113 hitachi ignition
This document provides specifications for the 2SD1113(K) silicon NPN triple diffused transistor. It can be used as an igniter and is housed in a TO-220AB package. The document includes maximum ratings, electrical characteristics, typical output characteristics, and dimensions. It also provides cautions for use and contact information.
2 n5401
This document provides information about a PNP general purpose amplifier and switch. It includes maximum ratings for voltages and currents, thermal characteristics, electrical characteristics, typical characteristics graphs, and packaging information for the TO-92 and SOT-23 packages. The device is designed for applications requiring high voltages and can operate with a collector-emitter voltage up to 150V and collector current up to 600mA.
Electronica i prelaboratorio 3
This document contains technical specifications for 3 bipolar junction transistors:
1) The Motorola BC546 transistor has a maximum collector-emitter voltage of 65V and beta range not specified.
2) The Motorola BC547 transistor has a maximum collector-emitter voltage of 45V and beta range not specified.
3) The Motorola BC548 transistor has a maximum collector-emitter voltage of 30V and beta range not specified.
Original NPN Transistor ZTX651 651 TO-92 New
This document describes two NPN silicon planar medium power transistors, the ZTX650 and ZTX651. The key specifications and features include:
- Maximum voltage ratings of 60V for the ZTX650 and 80V for the ZTX651
- Continuous current rating of 2 amps for both models
- Maximum power dissipation of 1 watt at 25°C ambient temperature, derating to zero power at 100°C for both models
- Electrical characteristics such as saturation voltages, switching times, and thermal resistance are provided for each model.
2sc1172
This document provides specifications for the 2SC1172 planar silicon transistor, intended for use in color TV horizontal output applications without a damper diode. Key specifications include a high collector-base voltage rating of 1500V and high-speed switching capability. The document lists absolute maximum ratings and typical electrical characteristics, such as a collector cutoff current of 1.0mA, DC current gain of 100, and collector-emitter saturation voltage of 1.0V at 4A of collector current. It also provides contact information for the manufacturer.
Original NPN Transistor 2SC4236 4236 6A 800V TO-247 New Shindengen
This document provides specifications for the SHINDENGEN 2SC4236 transistor, including:
1) Absolute maximum ratings such as a junction temperature of 150°C, collector current of 6A, and total transistor dissipation of 100W at 25°C.
2) Electrical characteristics at 25°C, such as a minimum DC current gain of 8 and maximum collector-emitter saturation voltage of 1V at 3A collector current.
3) Graphs showing characteristics like DC current gain, saturation voltage, and switching times over varying conditions like collector current, temperature, and voltages.
Original Opto LTV-354T LTV354T 354T 354 SOP-4 New
This document provides product data and specifications for Lite-On Technology Corp.'s LTV-354T series photocouplers. It includes details on packaging, electrical and optical characteristics, temperature profiles for soldering, and recommended footprints. The photocouplers feature AC input response, high isolation voltage up to 3,750Vrms, and mini-flat packages as small as 2.0mm in profile. They are suitable for applications requiring high density mounting such as hybrid substrates, programmable controllers, and measuring instruments.
Original PNP Transistors PZT2907A PZT2907 2907 P2F SOT22-3 New On Semiconductor
This document provides information on three general purpose transistors - the PN2907A, MMBT2907A, and PZT2907A. It describes their key electrical and thermal characteristics such as current gain range, maximum ratings, and package options. Diagrams of their physical dimensions and typical performance curves are also included. The transistors are designed for use as amplifiers or switches in applications requiring up to 500mA of current.
2 n2222
This document provides specifications for an NPN general purpose amplifier. It can source up to 500mA of collector current and has a maximum collector-emitter voltage rating of 40V. Electrical characteristics including gain, switching times, and leakage currents are provided over temperature ranges from -55°C to 150°C. Packaging information is included for the TO-92, SOT-23, and SOT-223 packages.
Original Power Supply IC LNK632DG LNK632 632 SOP-7 New
The LNK632DG is an energy efficient constant voltage/constant current switcher for adapters and chargers. It dramatically simplifies CV converter designs by eliminating secondary control circuitry and compensation components. Some key features include auto-restart protection, hysteretic thermal shutdown, tight output regulation that compensates for cable voltage drops and temperature variations, and high efficiency down to light loads. It is well-suited for charger applications like cell phones, PDAs, and MP3 players.
Original Relay G5RL 1A 12V New Omron
The document summarizes an low-profile relay model called G5RL that is suitable for various applications. It has several models including standard, low noise, high inrush, and high capacity. Key specifications include a height of 15.7mm, 8mm creepage distance, 10kV impulse withstand voltage. It provides information on ordering, ratings for coils and contacts, characteristics, dimensions, and engineering data.
More Related Content
Similar to Original NPN Transistor 2SD718 D718 8A 120V TO-3P New KEC
Original NPN Transistor 2SC4237 C4237 10A 1200V TO-247 New
The document summarizes the specifications of the SavantIC Semiconductor 2SC4237 silicon NPN power transistor. It includes:
1) Key features such as a TO-247 package and use as a switching power transistor with a high breakdown voltage.
2) Pin descriptions and absolute maximum ratings for voltage, current, power dissipation and temperature.
3) Thermal characteristics and typical electrical characteristics including current gain, switching times and cutoff currents.
4) A diagram of the package outline and pin dimensions.
D882 npn
This document provides specifications for an NPN transistor. It lists maximum ratings such as collector-base voltage of 40V and collector current of 3A. It also gives electrical characteristics including a collector-emitter breakdown voltage of 30V, DC current gain of 60-400, and transition frequency of 50MHz. Finally, it shows the transistor packaging is a TO-126 case and classifies the DC current gain range.
2 sa1036
This document provides specifications for the 2SA1036 PNP silicon general purpose transistor. Key details include:
- It is rated for a maximum collector current of -500 mA and collector-emitter voltage of -40V.
- Electrical characteristics are provided like typical collector-emitter saturation voltage of -0.4V and DC current gain range of 82-390.
- Package information indicates it comes in the SOT-23 package and provides physical dimensions.
- The transistor is RoHS compliant and a suffix of "-C" indicates it is halogen and lead free.
Original NPN Transistor STC403D STC403 403 TO-252 New AUK
This document provides specifications for an NPN silicon transistor called the STC403. It is intended for general purpose applications with features including low saturation voltage of 0.4V typical and high voltage rating of 60V minimum. The document provides information on ordering, pin connections, maximum ratings, electrical characteristics, and sample characteristic curves. It specifies parameters such as collector-emitter breakdown voltage, current gain, on/off voltages and times.
Original Transistor NPN TIP35C TIP35 TO-247 25A 100V New ST
This document provides specifications for a TIP35C NPN planar silicon transistor that can be used for audio power amplification and DC to DC conversion. It lists the transistor's maximum ratings including collector-base voltage, collector-emitter voltage, and collector current. The document also provides its typical electrical characteristics such as collector-base breakdown voltage, collector-emitter breakdown voltage, DC current gain, and collector-emitter saturation voltage.
Original Transistor PNP KTA1266-Y A1266 1266 TO-92 New
This document provides specifications for the KTA1266 PNP plastic encapsulated transistor. It includes:
- Electrical ratings such as collector-base voltage of -50V and collector current of -150mA.
- Electrical characteristics including DC current gain ranges from 70-400, collector-emitter saturation voltage below -0.3V, and transition frequency above 80MHz.
- Packaging information noting the transistor uses a TO-92 package.
000704
The AN7164N is an integrated circuit designed for high power audio amplification. It provides 47W of output power with low distortion and noise. It incorporates protection circuits to ensure reliability, including overcurrent, overheating, load short, and output ground short protections. The IC features a standby mode that allows powering on and off without noise even when power is continuously supplied.
Original NPN Transistor 2SC3199 C3199 3199 TO-92 New Secos
This document provides specifications for the 2SC3199 NPN plastic-encapsulated transistor. It can handle currents up to 0.15 amps and voltages up to 50 volts. The transistor has a high current capability and gain, and is packaged small. It is suitable for applications such as audio amplifiers and AM amplifiers. Electrical characteristics including breakdown voltages, current gains, saturation voltages and frequencies are provided. Physical dimension specifications and characteristic curves are also included.
Origimal Transistor PNP 2SB649AC B649AC B649 TO-126 120V 1.5A New UNISONIC TE...
This document provides information on the 2SB649/A PNP silicon transistor from Unisonic Technologies Co., including:
- Applications include low frequency power amplifiers paired with the 2SB669/A transistor.
- It provides ordering information, listing available package types and lead plating options.
- Absolute maximum and electrical characteristic ratings are provided for parameters like voltage, current, and temperature.
- Typical characteristics graphs show properties like gain, saturation voltage, and output capacitance over varying conditions.
- A safe operating area graph shows maximum voltage and current ranges.
Original Transistor PNP A1266 2SA1266 TO 92 New
The document summarizes the specifications and characteristics of the ST 2SA1266 PNP silicon epitaxial planar transistor. The transistor is classified into three groups - O, Y, and G - according to its DC current gain and can be manufactured in different pin configurations upon special request. Key specifications include an absolute maximum collector current of 150mA, DC current gain ranges from 70-400 depending on the group, and characteristics such as a collector-emitter saturation voltage below 0.3V and transition frequency above 80MHz. The transistor comes in a TO-92 plastic package.
Original NPN Transistor LBC817 BC817 6C SMD Code 500mA 45V SOT23
This document provides specifications for general purpose transistors. It lists maximum ratings including collector-emitter and collector-base voltages. It also gives thermal characteristics such as total device dissipation and thermal resistance. Electrical characteristics are provided including DC current gain, collector-emitter saturation voltage, and current-gain bandwidth product. Finally, the document includes device marking, ordering information, and pinout/package diagrams.
D1113 hitachi ignition
This document provides specifications for the 2SD1113(K) silicon NPN triple diffused transistor. It can be used as an igniter and is housed in a TO-220AB package. The document includes maximum ratings, electrical characteristics, typical output characteristics, and dimensions. It also provides cautions for use and contact information.
2 n5401
This document provides information about a PNP general purpose amplifier and switch. It includes maximum ratings for voltages and currents, thermal characteristics, electrical characteristics, typical characteristics graphs, and packaging information for the TO-92 and SOT-23 packages. The device is designed for applications requiring high voltages and can operate with a collector-emitter voltage up to 150V and collector current up to 600mA.
Electronica i prelaboratorio 3
This document contains technical specifications for 3 bipolar junction transistors:
1) The Motorola BC546 transistor has a maximum collector-emitter voltage of 65V and beta range not specified.
2) The Motorola BC547 transistor has a maximum collector-emitter voltage of 45V and beta range not specified.
3) The Motorola BC548 transistor has a maximum collector-emitter voltage of 30V and beta range not specified.
Original NPN Transistor ZTX651 651 TO-92 New
This document describes two NPN silicon planar medium power transistors, the ZTX650 and ZTX651. The key specifications and features include:
- Maximum voltage ratings of 60V for the ZTX650 and 80V for the ZTX651
- Continuous current rating of 2 amps for both models
- Maximum power dissipation of 1 watt at 25°C ambient temperature, derating to zero power at 100°C for both models
- Electrical characteristics such as saturation voltages, switching times, and thermal resistance are provided for each model.
2sc1172
This document provides specifications for the 2SC1172 planar silicon transistor, intended for use in color TV horizontal output applications without a damper diode. Key specifications include a high collector-base voltage rating of 1500V and high-speed switching capability. The document lists absolute maximum ratings and typical electrical characteristics, such as a collector cutoff current of 1.0mA, DC current gain of 100, and collector-emitter saturation voltage of 1.0V at 4A of collector current. It also provides contact information for the manufacturer.
Original NPN Transistor 2SC4236 4236 6A 800V TO-247 New Shindengen
This document provides specifications for the SHINDENGEN 2SC4236 transistor, including:
1) Absolute maximum ratings such as a junction temperature of 150°C, collector current of 6A, and total transistor dissipation of 100W at 25°C.
2) Electrical characteristics at 25°C, such as a minimum DC current gain of 8 and maximum collector-emitter saturation voltage of 1V at 3A collector current.
3) Graphs showing characteristics like DC current gain, saturation voltage, and switching times over varying conditions like collector current, temperature, and voltages.
Original Opto LTV-354T LTV354T 354T 354 SOP-4 New
This document provides product data and specifications for Lite-On Technology Corp.'s LTV-354T series photocouplers. It includes details on packaging, electrical and optical characteristics, temperature profiles for soldering, and recommended footprints. The photocouplers feature AC input response, high isolation voltage up to 3,750Vrms, and mini-flat packages as small as 2.0mm in profile. They are suitable for applications requiring high density mounting such as hybrid substrates, programmable controllers, and measuring instruments.
Original PNP Transistors PZT2907A PZT2907 2907 P2F SOT22-3 New On Semiconductor
This document provides information on three general purpose transistors - the PN2907A, MMBT2907A, and PZT2907A. It describes their key electrical and thermal characteristics such as current gain range, maximum ratings, and package options. Diagrams of their physical dimensions and typical performance curves are also included. The transistors are designed for use as amplifiers or switches in applications requiring up to 500mA of current.
2 n2222
This document provides specifications for an NPN general purpose amplifier. It can source up to 500mA of collector current and has a maximum collector-emitter voltage rating of 40V. Electrical characteristics including gain, switching times, and leakage currents are provided over temperature ranges from -55°C to 150°C. Packaging information is included for the TO-92, SOT-23, and SOT-223 packages.
Similar to Original NPN Transistor 2SD718 D718 8A 120V TO-3P New KEC (20)
Original NPN Transistor 2SC4237 C4237 10A 1200V TO-247 New
Original NPN Transistor 2SC4237 C4237 10A 1200V TO-247 New
Original NPN Transistor STC403D STC403 403 TO-252 New AUK
Original NPN Transistor STC403D STC403 403 TO-252 New AUK
Original Transistor NPN TIP35C TIP35 TO-247 25A 100V New ST
Original Transistor NPN TIP35C TIP35 TO-247 25A 100V New ST
Original Transistor PNP KTA1266-Y A1266 1266 TO-92 New
Original Transistor PNP KTA1266-Y A1266 1266 TO-92 New
Original NPN Transistor 2SC3199 C3199 3199 TO-92 New Secos
Original NPN Transistor 2SC3199 C3199 3199 TO-92 New Secos
Origimal Transistor PNP 2SB649AC B649AC B649 TO-126 120V 1.5A New UNISONIC TE...
Origimal Transistor PNP 2SB649AC B649AC B649 TO-126 120V 1.5A New UNISONIC TE...
Original NPN Transistor LBC817 BC817 6C SMD Code 500mA 45V SOT23
Original NPN Transistor LBC817 BC817 6C SMD Code 500mA 45V SOT23
Original NPN Transistor 2SC4236 4236 6A 800V TO-247 New Shindengen
Original NPN Transistor 2SC4236 4236 6A 800V TO-247 New Shindengen
Original PNP Transistors PZT2907A PZT2907 2907 P2F SOT22-3 New On Semiconductor
Original PNP Transistors PZT2907A PZT2907 2907 P2F SOT22-3 New On Semiconductor
More from AUTHELECTRONIC
Original Power Supply IC LNK632DG LNK632 632 SOP-7 New
The LNK632DG is an energy efficient constant voltage/constant current switcher for adapters and chargers. It dramatically simplifies CV converter designs by eliminating secondary control circuitry and compensation components. Some key features include auto-restart protection, hysteretic thermal shutdown, tight output regulation that compensates for cable voltage drops and temperature variations, and high efficiency down to light loads. It is well-suited for charger applications like cell phones, PDAs, and MP3 players.
Original Relay G5RL 1A 12V New Omron
The document summarizes an low-profile relay model called G5RL that is suitable for various applications. It has several models including standard, low noise, high inrush, and high capacity. Key specifications include a height of 15.7mm, 8mm creepage distance, 10kV impulse withstand voltage. It provides information on ordering, ratings for coils and contacts, characteristics, dimensions, and engineering data.
Original Transition-Mode PFC Controller IC LD7591GS 7591 SOP-8 New Leadtrend
This document provides information about the LD7591 transition-mode PFC controller, including:
- It is a voltage mode PFC controller that operates in transition mode with protections like OVP, OCP, and brown-in protection.
- It has features like low startup current, over voltage protection, open feedback protection, disable function, and integrated current sensing.
- Typical applications include adapters over 65W, open frame switching power supplies, LCD TV power supplies, and LED power supplies.
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...
The document describes a high voltage, high current Darlington transistor array that is well-suited for driving lamps, relays, or printer hammers. It has 7 NPN Darlington connected transistors with a high breakdown voltage and internal suppression diodes to ensure safety with inductive loads. It can drive incandescent lamps with peak inrush currents up to 500mA per transistor.
Original EEPROM IC BR93L76RFJ 93L76 RL76 SOP-8 New Rohm
This document provides important safety information regarding the intended use of ROHM products. It states that the products are designed for ordinary electronic equipment but should not be used in applications requiring extremely high reliability where malfunctions could directly endanger human life, such as medical devices. It also notes the products are not designed with antiradiation properties and certain exports may require controls under Japanese law. Contact information is provided for sales representatives.
Original Advanced IGBT/Mosfet Driver TD350E 350E SOP-14 New ST Microelectronics
This document provides information on an advanced IGBT/MOSFET gate driver called the TD350E, including its key features, applications, description, and specifications. The TD350E is designed for applications such as inverters, motor control, and UPS systems. It provides 1.5A/2.3A gate drive, active Miller clamping, two-level turn-off protection, desaturation detection, and fault status output. Electrical characteristics and timing diagrams are included to specify the device's performance.
Original N-Channel Mosfet 2SK3562 3562 TO-220 New Toshiba
This document provides specifications and performance characteristics for the Toshiba 2SK3562 N-channel MOSFET transistor. Key details include:
- It is an enhancement mode transistor intended for switching regulator applications with low on-resistance of 0.9 ohms and forward transfer admittance of 5.0S.
- Maximum ratings include a drain-source voltage of 600V, drain current of 6A continuous or 24A pulse, and drain power dissipation of 40W.
- Electrical characteristics at 25C include a gate threshold voltage of 2.0-4.0V, on-resistance of 0.9-1.25 ohms, and input/output capacit
Original N-Channel Mosfet FDPF33N25 33N25 TO-220 New FairChild
This document provides information on the FDPF33N25250VN-Channel MOSFET from Fairchild Semiconductor. It is a 250V N-Channel MOSFET with low on-resistance of 0.094Ω and fast switching capabilities. It uses Fairchild's proprietary planar stripe DMOS technology to minimize resistance and maximize performance for applications such as high efficiency power supplies. Key specifications and performance characteristics are provided.
Original N-Channel Mosfet IRFB4020PBF 4020 TO-220-3 New International Rectifier
This document provides specifications for a digital audio MOSFET designed for use in class D audio amplifier applications. The MOSFET has been optimized to achieve low on-resistance, gate charge, and reverse recovery charge for improved efficiency, total harmonic distortion, and electromagnetic interference. Additional features include a 175°C operating temperature and repetitive avalanche capability making it robust and reliable for audio amplifiers. Tables and graphs provide electrical characteristics and performance metrics.
Original Logic IC SN74LVC14A SN54LVC14A 74LVC14A 54LVC14A SOP-14 New Texas In...
The document provides information on the SN54LVC14A and SN74LVC14A hex Schmitt-trigger inverter integrated circuits. It describes their operating voltage ranges from 1.65V to 3.6V, maximum propagation delay of 6.4ns at 3.3V, ESD protection exceeding 2000V human-body and 200V machine models, and thermal characteristics with package impedance ranging from 47°C/W to 127°C/W. Ordering information and packaging details are provided for various operating temperature ranges from -55°C to 125°C. Electrical characteristics like input thresholds, output voltages, input and output currents, and input capacitance are specified over operating conditions.
Original Logic IC TC74HC238AF 74HC238AF 238AF SOP-16 New Toshiba
Original Logic IC TC74HC238AF 74HC238AF 238AF SOP-16 New Toshiba
Original High Voltage Isolation IC ACS710T KLA-12CB 710T SOP-16 New
The Allegro ACS710 current sensor provides economical and precise current sensing for industrial, commercial, and communications systems. It uses a precision linear Hall sensor integrated circuit with a copper conduction path near the surface to linearly track the magnetic field generated by the applied current. The sensor offers high immunity to electrical noise and low offset drift, and provides an analog output voltage and integrated overcurrent detection. It is available in a small surface-mount package.
Original Voltage Regulator & Controller IC TPS54231DR 54231DR 54231 SOP-8 Ne...
The document provides specifications and design information for the TPS54231 step-down DC-DC converter from Texas Instruments. The TPS54231 is a 2-A, 28-V input converter with an integrated high-side MOSFET. It features adjustable output voltage down to 0.8V, pulse skipping for high efficiency at light loads, fixed 570kHz switching frequency, and various protection mechanisms. Application areas include consumer, industrial, and automotive equipment requiring distributed power supplies. The device is available in an 8-pin SOIC package.
Original Analog Switch IC CD74HC4066PWR SN74HC4066DR 4066DR 4066PWR 4066 SOP...
Original Analog Switch IC CD74HC4066PWR SN74HC4066DR 4066DR 4066PWR 4066 SOP-14 New Texas Instruments
Original Microcontroller IC R5F104BDA R5F 104BDA 104 New
This document provides an overview and specifications for the Renesas RL78/G14 microcontroller, including:
- Ultra-low power consumption down to 66 μA/MHz and 0.60 μA for RTC + LVD. Operates from 1.6V to 5.5V.
- 16 to 512 KB flash memory, 44 DMIPS performance at 32MHz.
- Various low power modes like HALT, STOP, and SNOOZE.
- On-chip peripherals include timers, ADC, DAC, comparators, serial interfaces, and I/O ports.
- Packaged in LQFP, LSSOP, QFN packages with pin counts from 30
Original Power Factor Correction IC UCC28061DR 28061 SOP-16 New Texas Instrum...
The UCC28061 is a transition-mode PFC controller that features natural interleaving to improve efficiency and reduce component size. It provides complete system-level protections including input brownout, output overvoltage, and thermal shutdown. The device utilizes a natural interleaving technique where both channels operate as masters synchronized to the same frequency, delivering strong matching and fast response.
Original Gate Driver IC TD62083APG 62083APG 62083 DIP-18 New Toshiba
This document provides specifications for the TD62083APG/AFG and TD62084APG/AFG integrated circuits from Toshiba. They are 8-channel Darlington sink drivers comprised of NPN Darlington pairs, with each channel capable of 500mA of output current. Key features include integral clamp diodes, compatible inputs for various logic types, DIP-18 and SOP-18 packaging options. Electrical characteristics, test circuits, precautions and package dimensions are provided.
Original Zener Diode 1N5366B 5366B 5366 5W 39V New
This document provides information on ON Semiconductor's 1N53 Series 5 Watt Zener diodes. It includes specifications for over 40 Zener diode models with voltages ranging from 3.3V to 200V. The diodes feature tight voltage limits, low leakage current, and are packaged in axial lead plastic packages for protection in various environments. Maximum ratings and electrical characteristics like Zener voltage, impedance, and surge current are specified for each model in tables.
Original Audio Amplifier IC TDA7850 7850 SIP-25 New ST Microelectronics
The document describes the TDA7850, a MOSFET audio power amplifier chip designed for high power car audio systems. It has a maximum output power of 4 x 50W into 4 ohms or 4 x 80W into 2 ohms. The chip features protections against overheating, short circuits, and other faults. It uses a fully complementary MOSFET output stage for rail-to-rail voltage swing and minimized distortion. Electrical specifications and application information are provided.
More from AUTHELECTRONIC (20)
Original Power Supply IC LNK632DG LNK632 632 SOP-7 New
Original Power Supply IC LNK632DG LNK632 632 SOP-7 New
Original Transition-Mode PFC Controller IC LD7591GS 7591 SOP-8 New Leadtrend
Original Transition-Mode PFC Controller IC LD7591GS 7591 SOP-8 New Leadtrend
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...
Original NPN Darlington Transistor MC1413DR2G 1413DR2G NCV1413BDG 1413BDG 141...
Original EEPROM IC BR93L76RFJ 93L76 RL76 SOP-8 New Rohm
Original EEPROM IC BR93L76RFJ 93L76 RL76 SOP-8 New Rohm
Original Advanced IGBT/Mosfet Driver TD350E 350E SOP-14 New ST Microelectronics
Original Advanced IGBT/Mosfet Driver TD350E 350E SOP-14 New ST Microelectronics
Original N-Channel Mosfet 2SK3562 3562 TO-220 New Toshiba
Original N-Channel Mosfet 2SK3562 3562 TO-220 New Toshiba
Original N-Channel Mosfet FDPF33N25 33N25 TO-220 New FairChild
Original N-Channel Mosfet FDPF33N25 33N25 TO-220 New FairChild
Original N-Channel Mosfet IRFB4020PBF 4020 TO-220-3 New International Rectifier
Original N-Channel Mosfet IRFB4020PBF 4020 TO-220-3 New International Rectifier
Original Logic IC SN74LVC14A SN54LVC14A 74LVC14A 54LVC14A SOP-14 New Texas In...
Original Logic IC SN74LVC14A SN54LVC14A 74LVC14A 54LVC14A SOP-14 New Texas In...
Original Logic IC TC74HC238AF 74HC238AF 238AF SOP-16 New Toshiba
Original Logic IC TC74HC238AF 74HC238AF 238AF SOP-16 New Toshiba
Original High Voltage Isolation IC ACS710T KLA-12CB 710T SOP-16 New
Original High Voltage Isolation IC ACS710T KLA-12CB 710T SOP-16 New
Original Voltage Regulator & Controller IC TPS54231DR 54231DR 54231 SOP-8 Ne...
Original Voltage Regulator & Controller IC TPS54231DR 54231DR 54231 SOP-8 Ne...
Original Analog Switch IC CD74HC4066PWR SN74HC4066DR 4066DR 4066PWR 4066 SOP...
Original Analog Switch IC CD74HC4066PWR SN74HC4066DR 4066DR 4066PWR 4066 SOP...
Original Microcontroller IC R5F104BDA R5F 104BDA 104 New
Original Microcontroller IC R5F104BDA R5F 104BDA 104 New
Original Power Factor Correction IC UCC28061DR 28061 SOP-16 New Texas Instrum...
Original Power Factor Correction IC UCC28061DR 28061 SOP-16 New Texas Instrum...
Original Gate Driver IC TD62083APG 62083APG 62083 DIP-18 New Toshiba
Original Gate Driver IC TD62083APG 62083APG 62083 DIP-18 New Toshiba
Original Zener Diode 1N5366B 5366B 5366 5W 39V New
Original Zener Diode 1N5366B 5366B 5366 5W 39V New
Original Audio Amplifier IC TDA7850 7850 SIP-25 New ST Microelectronics
Original Audio Amplifier IC TDA7850 7850 SIP-25 New ST Microelectronics
Recently uploaded
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
Slides for the 4th Presentation on LLM Fine-Tuning with QLoRA Presented by Anant, featuring DataStax Astra
Computational Engineering IITH Presentation
This Presentation will give you a brief idea about what Computational Engineering at IIT Hyderabad has to offer.
Null Bangalore | Pentesters Approach to AWS IAM
#Abstract:
- Learn more about the real-world methods for auditing AWS IAM (Identity and Access Management) as a pentester. So let us proceed with a brief discussion of IAM as well as some typical misconfigurations and their potential exploits in order to reinforce the understanding of IAM security best practices.
- Gain actionable insights into AWS IAM policies and roles, using hands on approach.
#Prerequisites:
- Basic understanding of AWS services and architecture
- Familiarity with cloud security concepts
- Experience using the AWS Management Console or AWS CLI.
- For hands on lab create account on [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
# Scenario Covered:
- Basics of IAM in AWS
- Implementing IAM Policies with Least Privilege to Manage S3 Bucket
- Objective: Create an S3 bucket with least privilege IAM policy and validate access.
- Steps:
- Create S3 bucket.
- Attach least privilege policy to IAM user.
- Validate access.
- Exploiting IAM PassRole Misconfiguration
-Allows a user to pass a specific IAM role to an AWS service (ec2), typically used for service access delegation. Then exploit PassRole Misconfiguration granting unauthorized access to sensitive resources.
- Objective: Demonstrate how a PassRole misconfiguration can grant unauthorized access.
- Steps:
- Allow user to pass IAM role to EC2.
- Exploit misconfiguration for unauthorized access.
- Access sensitive resources.
- Exploiting IAM AssumeRole Misconfiguration with Overly Permissive Role
- An overly permissive IAM role configuration can lead to privilege escalation by creating a role with administrative privileges and allow a user to assume this role.
- Objective: Show how overly permissive IAM roles can lead to privilege escalation.
- Steps:
- Create role with administrative privileges.
- Allow user to assume the role.
- Perform administrative actions.
- Differentiation between PassRole vs AssumeRole
Try at [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
AI for Legal Research with applications, tools
AI applications in legal research include rapid document analysis, case law review, and statute interpretation. AI-powered tools can sift through vast legal databases to find relevant precedents and citations, enhancing research accuracy and speed. They assist in legal writing by drafting and proofreading documents. Predictive analytics help foresee case outcomes based on historical data, aiding in strategic decision-making. AI also automates routine tasks like contract review and due diligence, freeing up lawyers to focus on complex legal issues. These applications make legal research more efficient, cost-effective, and accessible.
一比一原版(爱大毕业证书)爱荷华大学毕业证如何办理
原版一模一样【微信：741003700 】【(爱大毕业证书)爱荷华大学毕业证成绩单】【微信：741003700 】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原。
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问Q/微741003700
【主营项目】
一.毕业证【q微741003700】成绩单、使馆认证、教育部认证、雅思托福成绩单、学生卡等！
二.真实使馆公证(即留学回国人员证明,不成功不收费)
三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
四.办理各国各大学文凭(一对一专业服务,可全程监控跟踪进度)
如果您处于以下几种情况：
◇在校期间，因各种原因未能顺利毕业……拿不到官方毕业证【q/微741003700】
◇面对父母的压力，希望尽快拿到；
◇不清楚认证流程以及材料该如何准备；
◇回国时间很长，忘记办理；
◇回国马上就要找工作，办给用人单位看；
◇企事业单位必须要求办理的
◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
办理(爱大毕业证书)爱荷华大学毕业证【微信：741003700 】外观非常简单，由纸质材料制成，上面印有校徽、校名、毕业生姓名、专业等信息。
办理(爱大毕业证书)爱荷华大学毕业证【微信：741003700 】格式相对统一，各专业都有相应的模板。通常包括以下部分：
校徽：象征着学校的荣誉和传承。
校名:学校英文全称
授予学位：本部分将注明获得的具体学位名称。
毕业生姓名：这是最重要的信息之一，标志着该证书是由特定人员获得的。
颁发日期：这是毕业正式生效的时间，也代表着毕业生学业的结束。
其他信息：根据不同的专业和学位，可能会有一些特定的信息或章节。
办理(爱大毕业证书)爱荷华大学毕业证【微信：741003700 】价值很高，需要妥善保管。一般来说，应放置在安全、干燥、防潮的地方，避免长时间暴露在阳光下。如需使用，最好使用复印件而不是原件，以免丢失。
综上所述，办理(爱大毕业证书)爱荷华大学毕业证【微信：741003700 】是证明身份和学历的高价值文件。外观简单庄重，格式统一，包括重要的个人信息和发布日期。对持有人来说，妥善保管是非常重要的。
Redefining brain tumor segmentation: a cutting-edge convolutional neural netw...
Medical image analysis has witnessed significant advancements with deep learning techniques. In the domain of brain tumor segmentation, the ability to
precisely delineate tumor boundaries from magnetic resonance imaging (MRI)
scans holds profound implications for diagnosis. This study presents an ensemble convolutional neural network (CNN) with transfer learning, integrating
the state-of-the-art Deeplabv3+ architecture with the ResNet18 backbone. The
model is rigorously trained and evaluated, exhibiting remarkable performance
metrics, including an impressive global accuracy of 99.286%, a high-class accuracy of 82.191%, a mean intersection over union (IoU) of 79.900%, a weighted
IoU of 98.620%, and a Boundary F1 (BF) score of 83.303%. Notably, a detailed comparative analysis with existing methods showcases the superiority of
our proposed model. These findings underscore the model’s competence in precise brain tumor localization, underscoring its potential to revolutionize medical
image analysis and enhance healthcare outcomes. This research paves the way
for future exploration and optimization of advanced CNN models in medical
imaging, emphasizing addressing false positives and resource efficiency.
原版制作(Humboldt毕业证书)柏林大学毕业证学位证一模一样
原件一模一样【微信：bwp0011】《(Humboldt毕业证书)柏林大学毕业证学位证》【微信：bwp0011】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原。
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问微bwp0011
【主营项目】
一.毕业证【微bwp0011】成绩单、使馆认证、教育部认证、雅思托福成绩单、学生卡等！
二.真实使馆公证(即留学回国人员证明,不成功不收费)
三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
四.办理各国各大学文凭(一对一专业服务,可全程监控跟踪进度)
如果您处于以下几种情况：
◇在校期间，因各种原因未能顺利毕业……拿不到官方毕业证【微bwp0011】
◇面对父母的压力，希望尽快拿到；
◇不清楚认证流程以及材料该如何准备；
◇回国时间很长，忘记办理；
◇回国马上就要找工作，办给用人单位看；
◇企事业单位必须要求办理的
◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
2008 BUILDING CONSTRUCTION Illustrated - Ching Chapter 08 Doors and Windows.pdf
2008 BUILDING CONSTRUCTION Illustrated - Ching Chapter 08 Doors and Windows
Rainfall intensity duration frequency curve statistical analysis and modeling...
Using data from 41 years in Patna’ India’ the study’s goal is to analyze the trends of how often it rains on a weekly, seasonal, and annual basis (1981−2020). First, utilizing the intensity-duration-frequency (IDF) curve and the relationship by statistically analyzing rainfall’ the historical rainfall data set for Patna’ India’ during a 41 year period (1981−2020), was evaluated for its quality. Changes in the hydrologic cycle as a result of increased greenhouse gas emissions are expected to induce variations in the intensity, length, and frequency of precipitation events. One strategy to lessen vulnerability is to quantify probable changes and adapt to them. Techniques such as log-normal, normal, and Gumbel are used (EV-I). Distributions were created with durations of 1, 2, 3, 6, and 24 h and return times of 2, 5, 10, 25, and 100 years. There were also mathematical correlations discovered between rainfall and recurrence interval.
Findings: Based on findings, the Gumbel approach produced the highest intensity values, whereas the other approaches produced values that were close to each other. The data indicates that 461.9 mm of rain fell during the monsoon season’s 301st week. However, it was found that the 29th week had the greatest average rainfall, 92.6 mm. With 952.6 mm on average, the monsoon season saw the highest rainfall. Calculations revealed that the yearly rainfall averaged 1171.1 mm. Using Weibull’s method, the study was subsequently expanded to examine rainfall distribution at different recurrence intervals of 2, 5, 10, and 25 years. Rainfall and recurrence interval mathematical correlations were also developed. Further regression analysis revealed that short wave irrigation, wind direction, wind speed, pressure, relative humidity, and temperature all had a substantial influence on rainfall.
Originality and value: The results of the rainfall IDF curves can provide useful information to policymakers in making appropriate decisions in managing and minimizing floods in the study area.
Generative AI Use cases applications solutions and implementation.pdf
Generative AI solutions encompass a range of capabilities from content creation to complex problem-solving across industries. Implementing generative AI involves identifying specific business needs, developing tailored AI models using techniques like GANs and VAEs, and integrating these models into existing workflows. Data quality and continuous model refinement are crucial for effective implementation. Businesses must also consider ethical implications and ensure transparency in AI decision-making. Generative AI's implementation aims to enhance efficiency, creativity, and innovation by leveraging autonomous generation and sophisticated learning algorithms to meet diverse business challenges.
https://www.leewayhertz.com/generative-ai-use-cases-and-applications/
Gas agency management system project report.pdf
The project entitled "Gas Agency" is done to make the manual process easier by making it a computerized system for billing and maintaining stock. The Gas Agencies get the order request through phone calls or by personal from their customers and deliver the gas cylinders to their address based on their demand and previous delivery date. This process is made computerized and the customer's name, address and stock details are stored in a database. Based on this the billing for a customer is made simple and easier, since a customer order for gas can be accepted only after completing a certain period from the previous delivery. This can be calculated and billed easily through this. There are two types of delivery like domestic purpose use delivery and commercial purpose use delivery. The bill rate and capacity differs for both. This can be easily maintained and charged accordingly.
SCALING OF MOS CIRCUITS m .pptx
this ppt explains about scaling parameters of the mosfet it is basically vlsi subject
Prediction of Electrical Energy Efficiency Using Information on Consumer's Ac...
Energy efficiency has been important since the latter part of the last century. The main object of this survey is to determine the energy efficiency knowledge among consumers. Two separate districts in Bangladesh are selected to conduct the survey on households and showrooms about the energy and seller also. The survey uses the data to find some regression equations from which it is easy to predict energy efficiency knowledge. The data is analyzed and calculated based on five important criteria. The initial target was to find some factors that help predict a person's energy efficiency knowledge. From the survey, it is found that the energy efficiency awareness among the people of our country is very low. Relationships between household energy use behaviors are estimated using a unique dataset of about 40 households and 20 showrooms in Bangladesh's Chapainawabganj and Bagerhat districts. Knowledge of energy consumption and energy efficiency technology options is found to be associated with household use of energy conservation practices. Household characteristics also influence household energy use behavior. Younger household cohorts are more likely to adopt energy-efficient technologies and energy conservation practices and place primary importance on energy saving for environmental reasons. Education also influences attitudes toward energy conservation in Bangladesh. Low-education households indicate they primarily save electricity for the environment while high-education households indicate they are motivated by environmental concerns.
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
Sinan from the Delivery Hero mobile infrastructure engineering team shares a deep dive into performance acceleration with Gradle build cache optimizations. Sinan shares their journey into solving complex build-cache problems that affect Gradle builds. By understanding the challenges and solutions found in our journey, we aim to demonstrate the possibilities for faster builds. The case study reveals how overlapping outputs and cache misconfigurations led to significant increases in build times, especially as the project scaled up with numerous modules using Paparazzi tests. The journey from diagnosing to defeating cache issues offers invaluable lessons on maintaining cache integrity without sacrificing functionality.
Applications of artificial Intelligence in Mechanical Engineering.pdf
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
AI offers the capability to process vast amounts of data, identify patterns, and make predictions with a level of speed and accuracy unattainable by traditional methods. This has profound implications for mechanical engineering, enabling more efficient design processes, predictive maintenance strategies, and optimized manufacturing operations. AI-driven tools can learn from historical data, adapt to new information, and continuously improve their performance, making them invaluable in tackling the multifaceted challenges of modern mechanical engineering.
Recently uploaded (20)
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
Redefining brain tumor segmentation: a cutting-edge convolutional neural netw...
Redefining brain tumor segmentation: a cutting-edge convolutional neural netw...
1FIDIC-CONSTRUCTION-CONTRACT-2ND-ED-2017-RED-BOOK.pdf
1FIDIC-CONSTRUCTION-CONTRACT-2ND-ED-2017-RED-BOOK.pdf
2008 BUILDING CONSTRUCTION Illustrated - Ching Chapter 08 Doors and Windows.pdf
2008 BUILDING CONSTRUCTION Illustrated - Ching Chapter 08 Doors and Windows.pdf
Rainfall intensity duration frequency curve statistical analysis and modeling...
Rainfall intensity duration frequency curve statistical analysis and modeling...
Generative AI Use cases applications solutions and implementation.pdf
Generative AI Use cases applications solutions and implementation.pdf
Prediction of Electrical Energy Efficiency Using Information on Consumer's Ac...
Prediction of Electrical Energy Efficiency Using Information on Consumer's Ac...
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
4. Mosca vol I -Fisica-Tipler-5ta-Edicion-Vol-1.pdf
4. Mosca vol I -Fisica-Tipler-5ta-Edicion-Vol-1.pdf
Applications of artificial Intelligence in Mechanical Engineering.pdf
Applications of artificial Intelligence in Mechanical Engineering.pdf
Original NPN Transistor 2SD718 D718 8A 120V TO-3P New KEC
- 1. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 8 A IB Base current 0.8 A PT Total power dissipation TC=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(I)) and symbol
- 2. SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD718 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Base-emitter breakdown voltage IC=50mA ,IB=0 120 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VBE Base-emitter voltage IC=5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=5V 55 160 fT Transition frequency IC=1A ; VCE=5V 12 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 170 pF hFE Classifications R O 55-110 80-160
- 3. SavantIC Semiconductor Product Specification 3 Silicon NPN Power Transistors 2SD718 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
- 4. SavantIC Semiconductor Product Specification 4 Silicon NPN Power Transistors 2SD718