This document provides a summary of simulation results for a MOSFET device model. It includes: 1) A SPICE model for the MTM23223 power MOSFET including parameters for the MOSFET, body diode, and ESD protection diodes. 2) Simulation results graphs for transconductance, Vgs-Id characteristics, Rds(on), gate charge, capacitance characteristics, switching time, output characteristics, and reverse recovery that compare measurements to simulations. 3) Evaluation circuits used in the simulations and tables comparing measurement and simulation results.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: MTM23223
MANUFACTURER: PANASONIC
Body Diode (Model Parameters) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
*$
*PART NUMBER: MTM23223
*MANUFACTURER: PANASONIC
*All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
.SUBCKT MTM23223 D G S
M_M1 D G S S M23223
X_U3 G S DZ23223
D_D1 S D D23223
.ENDS
.MODEL M23223 NMOS
+ LEVEL=3 L=720.00E-9 W=.619 KP=51.630E-6 RS=1.0000E-3
+ RD=11.555E-3 VTO=.91374 RDS=20.000E6 TOX=40.000E-9
+ CGSO=2.2062E-9 CGDO=12.37E-11 CBD=5.0000E-10
+ MJ=.35331 PB=3.2415
+ KAPPA=0 THETA=0 RG=0.8 RB=1 N=5 IS=1E-15
+ GAMMA=0 ETA=0.003
.MODEL D23223 D
+ IS=116.77E-18 N=.60666 RS=1.0000E-6 IKF=51.226E-3
+ CJO=0 ISR=0 BV=20 IBV=100.00E-6 TT=50.562E-15
.subckt DZ23223 1 2
D2 1 3 DZ2
D1 2 3 DZ1
.model DZ1 D
+ IS=0.01p N=0.1 ISR=0
+ BV=16.85 IBV=0.001 RS=837
.model DZ2 D
+ IS=0.1p N=0.1 ISR=0
+ BV=16.85 IBV=0.001 RS=0
.ENDS
*$
SPICE MODEL
Circuit Configuration

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0
2
4
6
8
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID - Drain Current - A
gfs
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A)
Measurement Simulation
Error(%)
0.01 0.500 0.500 0.000
0.02 2.000 2.000 0.000
0.05 2.780 2.900 4.317
0.1 3.800 3.833 0.868
0.2 5.000 5.000 0.000
0.5 6.300 6.250 -0.794
1 7.700 7.692 -0.104

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V3
0Vdc
V2
10Vdc
0
U25
MTM23223
Vv ariable
10Vdc
V_V2
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(V3)
10mA
100mA
1.0A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
0 0 0 1 1 1 1 1 2 2 2
VGS - Gate to Source Voltage - V
ID-DrainCurrent-A
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A)
Measurement Simulation
Error (%)
0.01 0.850 0.858 0.941
0.02 0.860 0.868 0.930
0.05 0.880 0.885 0.568
0.1 0.900 0.905 0.556
0.2 0.930 0.933 0.323
0.5 0.980 0.987 0.714
1 1.050 1.051 0.095

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U25
MTM23223
0
V3
0Vdc
VDS
0Vdc
VGS
4Vdc
V_VDS
0V 20mV 40mV 50mV
I(V3)
0A
0.5A
1.0A
1.5A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=1A,
VGS=4V
Measurement Simulation Error (%)
RDS (on) ΩΩΩΩ 0.020 0.020 0

8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
V1
16Vdc
-
+
W1
ION = 0uA
IOFF = 1mA
W
V2
0Vdc
I2
4.5Adc
D1
Dbreak
I1
TD = 0
TF = 10n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 10n
U25
MTM23223
0
Time*1mS
0 2n 4n 6n 8n 10n 12n 14n 16n 18n 20n
V(W1:3)
0V
1.0V
2.0V
3.0V
4.0V
5.0V
6.0V
7.0V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=16V,ID=4.5A
,VGS=5V
Measurement Simulation Error (%)
Qgs(nc) 2.000 2.009 0.450
Qgd(nc) 1.500 1.504 0.267
Qg(nc) 15.000 10.226 -31.827

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VGS-Qg
0
1
2
3
4
5
6
7
0 2 4 6 8 10 12 14 16 18 20
Qg (nC)
VGS(V)
Gate Charge Characteristic Reference

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Capacitance Characteristic
Simulation Result
Cbd(pF)
VDS(V)
Measurement Simulation
Error(%)
2 14.000 14.046 0.329
3 13.000 13.374 2.877
5 12.000 11.920 -0.667
10 10.000 10.132 1.320
15 9.000 9.051 0.567
Simulation
Measurement

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
L2
10nH
R2
50
V1
10Vdc
0
U25
MTM23223
L1
10nH
R3
50
R1
50V2
TD = 2u
TF = 5n
PW = 10u
PER = 200u
V1 = 0
TR = 5n
V2 = 8
Time
2.00us 2.10us 2.20us 2.30us1.92us
V(L1:1)*2.5 V(L2:2)
0V
2V
4V
6V
8V
10V
12V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=1 A, VDD=10V
VGS=0/4V
Measurement Simulation Error(%)
Ton(ns) 16.000 16.526 3.288

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Vv ariable
10Vdc
Vstep
10Vdc
0
Vdsense
0Vdc
U27
MTM23223
V_Vvariable
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(Vdsense)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=1V
1.1
1.2

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
U25
MTM23223
0
R1
0.01m
V1
0Vdc
V_V1
0V 0.4V 0.8V 1.2V
I(R1)
1.0mA
10mA
100mA
1.0A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
0.01
0.21
0.41
0.61
0.81
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)
DrainreversecurrentIDR(A)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
Measurement
VSD(V)
Simulation %Error
0.010 0.500 0.504 0.800
0.020 0.510 0.517 1.373
0.050 0.530 0.535 0.943
0.100 0.550 0.553 0.545
0.200 0.570 0.573 0.526
0.500 0.600 0.600 0.000
1.000 0.620 0.622 0.323

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Time
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Trr Measurement Simulation Error (%)
Trj+Trb(ns) 51.500 52.485 1.913
0
V1
TD = 12n
TF = 8ns
PW = 1us
PER = 100us
V1 = -9.4v
TR = 8ns
V2 = 10.6v
R1
50
U23
MTM23223

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse Recovery Characteristic Reference
Trj=5.5(ns)
Trb=46(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example

17. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Ropen
100MEG
U25
MTM23223
R1
0.01m
V1
0Vdc
0
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit

18. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Zener Voltage Characteristic Reference