1R5GZ41 PSpice Model (Free SPICE Model)
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This document contains a device modeling report for a 1R5GZ41 general purpose rectifier diode from Toshiba. It includes the SPICE model parameters for the diode, simulation results comparing the forward current, capacitance, and reverse recovery characteristics to measurements, and evaluation circuits used in the simulations. The simulations match the measurements well with less than 3% error.
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1R5GZ41 PSpice Model (Free SPICE Model)
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Device Modeling Report Bee Technologies Inc. COMPONENTS: DIODE/ GENERAL PURPOSE RECTIFIER/STANDARD PART NUMBER: 1R5GZ41 MANUFACTURER: TOSHIBA REMARK: TC=25C
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 SPICE MODEL PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap *$ * PART NUMBER: 1R5GZ41 * MANUFACTURER: TOSHIBA * All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 .MODEL 1RSGZ41 D + IS=567.92E-12 + N=1.4479 + RS=1.0003E-6 + IKF=1.0000E3 + ISR=0 + CJO=146.30E-12 + M=.4387 + VJ=.49857 + BV=400 + IBV=10.000E-6 + TT=5.7131E-6 *$
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 R1 0.01m V1 0Vdc 0 D1 1RSGZ41 Forward Current Characteristic Circuit Simulation Result Evaluation Circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Comparison Graph Circuit Simulation Result Simulation Result Ifwd(A) Vfwd(V) Measurement Vfwd(V) Simulation %Error 0.01 0.620 0.625 -0.76 0.02 0.648 0.651 -0.42 0.05 0.688 0.685 0.44 0.1 0.714 0.711 0.43 0.2 0.740 0.737 0.42 0.5 0.772 0.771 0.10 1 0.802 0.797 0.60 2 0.824 0.823 0.10 5 0.850 0.858 -0.99
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 D1 1RSGZ41 0 V2 0Vdc V1 TD = 0 TF = 50n PW = 5u PER = 10u V1 = 0 TR = 10n V2 = 400 Capacitance Characteristic Circuit Simulation Result Evaluation Circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Comparison Graph Circuit Simulation Result Simulation Result Vrev(V) Cj(pF) Measurement Cj(pF) Simulation %Error 0 145.899 145.899 0.000 0.1 135.250 135.247 0.002 0.2 127.750 127.755 -0.004 0.5 107.210 107.207 0.003 1 89.175 89.147 0.031 2 72.147 72.147 0.000 5 51.744 51.744 0.000 10 39.000 38.416 1.497 20 28.610 28.416 0.678 50 18.891 18.391 2.647 100 13.900 14.265 -2.626
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 D1 1RSGZ41 R1 50 0 V1 TD = 0 TF = 10ns PW = 20us PER = 50us V1 = -9.20V TR = 10ns V2 = 10.7V Reverse Recovery Characteristic Circuit Simulation Result Evaluation Circuit Compare Measurement vs. Simulation Measurement Simulation %Error trr 3.96 us 3.90 us 1.38
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004 Reverse Recovery Characteristic Reference Trj =1.28(us) Trb= 2.68(us) Conditions: Ifwd=Irev=0.2(A), Rl=50 Example Relation between trj and trb Measurement