This document provides a device modeling report for the SSM3K318T MOSFET manufactured by Toshiba. It includes summaries of simulations and measurements of the MOSFET's electrical characteristics such as transconductance, output characteristics, switching times, and reverse recovery characteristics. Model parameters are also provided for the MOSFET and its internal body diode in the PSpice model. Circuit simulations are shown to match measurements within a few percent error.