The document is a detailed device modeling report for a MOSFET (part number: sch2080ke) manufactured by Rohm, including model parameters and characteristics. It presents simulation results for transconductance, output characteristics, capacitance, switching time, and reverse recovery, comparing measurements with simulated values and noting percentage errors. The report provides comprehensive information on various parameters, including threshold voltage, source resistance, and gate charge, as well as circuit test conditions used in the evaluation.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: SCH2080KE
MANUFACTURER: ROHM
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
1 1.187 1.142 -3.77
2 1.699 1.646 -3.13
5 2.724 2.698 -0.97
10 3.961 3.968 0.19
20 5.874 5.922 0.82
VDS=10V

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V_VGS
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
I(U1:2)
100mA
1.0A
10A
100A
VGS
VDS
10V
0
U1
SCH2080KE
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
0.1 4.185 4.393 4.98
0.2 4.550 4.629 1.73
0.5 5.215 5.091 -2.38
1 5.877 5.606 -4.61
2 6.651 6.324 -4.91
5 8.085 7.710 -4.64
10 9.380 9.215 -1.76
20 11.240 11.246 0.05
45 14.305 14.493 1.31
VDS=10V

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VGS
18V
0
VDS
U1
SCH2080KE
V_VDS
0V 100mV 200mV 300mV 400mV 500mV 600mV 700mV 800mV
I(U1:2)
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=18(V), ID=10(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 80.000 81.125 1.41

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V_VDS
0V 2V 4V 6V 8V 10V
I(U1:2)
0A
5A
10A
15A
20A
25A
30A
35A
40A
VGS
0
VDS
U1
SCH2080KE
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS = 10V
VGS = 12V
VGS = 20V
VGS = 18V
VGS = 16V
VGS = 14V

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 2400.000 2419.000 0.79
0.2 2370.000 2327.500 -1.79
0.5 2150.000 2138.000 -0.56
1 1820.000 1900.000 4.40
2 1665.000 1600.000 -3.90
5 1183.000 1180.000 -0.25
10 890.000 897.570 0.85
20 665.000 668.000 0.45
50 433.000 443.800 2.49
100 313.000 323.520 3.36
200 228.000 235.200 3.16
500 156.000 154.040 -1.26
900 124.000 118.300 -4.60
Simulation
Measurement

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Time*1mA
0 20n 40n 60n 80n 100n 120n
V(W1:3)
0V
5V
10V
15V
20V
D1
dmod ID
10A
VDD
400V
0
-
+
W1
ION = 0
IOFF = 1mA
W
U1
SCH2080KE
IGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=400(V), VGS=18(V), ID=10(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 27.000 26.910 -0.33
Qgd nC 31.000 31.139 0.45
Qg nC 106.000 84.181 -20.58

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Time
1.8us 1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:2)/40 V(U1:1)/1.8
0V
2.5V
5.0V
7.5V
10.0V
12.5V
15.0V
L1
30nH
1 2
Rg
1u
U1
SCH2080KE
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = 18
VDD
400
0
RL
40
L2
50nH
12
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=400(V), VGS=0/18(V), ID=10(A), RG=0
Parameter Unit Measurement Simulation %Error
ton ns 70.000 69.962 -0.05

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V_VSD
0V 0.5V 1.0V 1.5V 2.0V
I(S)
10mA
100mA
1.0A
10A
100A
0
VSD
S
U1
SCH2080KE
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Simulation result
Comparison table
IS (A)
VSD (V)
%Error
Measurement Simulation
0.01 0.857 0.860 0.35
0.02 0.876 0.879 0.34
0.05 0.900 0.903 0.33
0.1 0.925 0.922 -0.32
0.2 0.945 0.942 -0.32
0.5 0.980 0.971 -0.92
1 1.004 1.000 -0.40
2 1.045 1.038 -0.63
5 1.125 1.123 -0.18
10 1.240 1.243 0.21
20 1.440 1.464 1.65
40 1.900 1.888 -0.62

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Time
9.6us 9.8us 10.0us 10.2us 10.4us 10.6us
I(R1)
-4A
-2A
0A
2A
4A
6A
8A
10A
12A
U1
SCH2080KE
0
V1TD = 0ns
TF = 84ns
PW = 10us
PER = 1000us
V1 = -100V
TR = 1ns
V2 = 400V
R1
39.87
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
Irrm A 2.400 2.395 -0.21
trr ns 37.000 66.393 79.44