SPICE MODEL of TPC8119 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Parameter Model)
PART NUMBER: TPC8119
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Parameter Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3
0
10
20
30
40
0 5 10 15 20
TransconductanceGFS(s)
- Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A)
gfs
Error(%)
Measurement Simulation
1.00 7.700 7.990 3.77
2.00 11.000 11.251 2.28
5.00 18.000 17.633 -2.04
10.00 25.200 24.693 -2.01
20.00 34.850 34.456 -1.13

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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V1
0Vdc
V2
-10
0
V3
0VdcU1
TPC8119
V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-8A
-16A
-24A
-32A
-40A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5
0
10
20
30
40
0 1 2 3 4 5
-DraincurrentID(A)
- Gate−source voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
Error (%)
Measurement Simulation
1.00 1.850 1.839 -0.595
2.00 1.950 1.944 -0.333
5.00 2.135 2.151 0.749
10.00 2.370 2.387 0.717
20.00 2.700 2.725 0.926
30.00 2.970 2.987 0.572
40.00 3.230 3.211 -0.588

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6
U1
TPC8119
0
V3
0Vdc
VDS
0Vdc
V1
-10
V_VDS
0V -20mV -40mV -50mV
I(V3)
0A
-1.0A
-2.0A
-3.0A
-4.0A
-5.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -5 A, VGS= -10 V Measurement Simulation Error (%)
RDS (on) m 10.000 9.984 -0.160

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VDD
-24
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
11
0
D2
Dbreak
0
U1
TPC8119
Time*1mA
0 10n 20n 30n 40n 50n
V(W1:4)
0V
-5V
-10V
-15V
-20V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -24V,ID= -10A
,VGS= -10V
Measurement Simulation Error (%)
Qgs(nc) 5.000 5.000 0.000
Qgd(nc) 13.000 13.060 0.462
Qg(nc) 40.000 37.684 -5.790

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Capacitance Characteristic
Simulation Result
VSD(V)
Cbd(pF)
Error (%)
Measurement Simulation
1.00 390.000 394.700 1.205
2.00 280.000 283.800 1.357
5.00 175.000 179.540 2.594
10.00 125.000 121.000 -3.200
20.00 85.000 87.770 3.259
Simulation
Measurement

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9
0
VDD
-15.3Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
L2
50nH
R2
4.7
R1
4.7
L1
30nH
U1
TPC8119
RL
3
Time
0.8us 0.9us 1.0us 1.1us 1.2us
V(U1:4) V(U1:5)/1.5
2V
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -5A, VDD= -15V
VGS= -10V
Measurement Simulation Error(%)
ton ns 16.000 16.049 0.306

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V2
-2
V1
0
0
V3
0Vdc
U1
TPC8119
V_V2
0V -0.5V -1.0V -1.5V -2.0V
I(V3)
0A
-10A
-20A
-30A
-40A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS= -2.7V
-10.0V
-3.3V
-3.7
V -3.5V
-8V
VV
-6V
-5V -4V
-3V

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U1
TPC8119
VDS
0
Vsense
0Vdc
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
DrainreversecurrentIDR(A)
Drain−source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS(V)
Measurement
VDS(V)
Simulation
%Error
0.1 0.6350 0.634 -0.205
0.2 0.6500 0.651 0.154
0.5 0.6750 0.676 0.148
1.0 0.7000 0.699 -0.143
2.0 0.7280 0.728 0.027
5.0 0.7750 0.774 -0.129
10.0 0.8150 0.816 0.123
20.0 0.8750 0.873 -0.229
40.0 0.9550 0.956 0.084

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13
U1
TPC8119
V1
TD = 90ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
R1
50
0
Time
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
I(R1)
-400mA
-200mA
0A
200mA
400mA
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Measurement Simulation Error (%)
trj ns 18.000 18.209 1.161

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Reverse Recovery Characteristic Reference
Trj= 18.000 (ns)
Trb= 46.000.(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example