The document is a device modeling report for a MOSFET (TPC6012) by Bee Technologies Inc., detailing various model parameters and characteristics. It includes simulation results comparing measurements of transconductance, gate charge characteristics, capacitances, switching times, forward current, and reverse recovery characteristics, all demonstrating minimal error percentages between simulation and measurement. The report serves as a comprehensive analysis for understanding the performance and behavior of the TPC6012 MOSFET under various conditions.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TPC6012
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
3
0
5
10
15
20
25
30
0.0 2.0 4.0 6.0 8.0 10.0
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Simulation Result
Id(A)
gfs(S)
%Error
Measurement Simulation
0.5 6.400 6.691 4.54
1 9.200 9.435 2.56
2 13.400 13.281 -0.89
5 21.200 20.797 -1.90
10 30.000 29.091 -3.03

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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V_V1
0V 1.0V 2.0V 3.0V 4.0V
I(V3)
0A
2A
4A
6A
8A
10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V1
0Vdc
V2
10
0
V3
0Vdc
U1
TPC6012

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0.00
2.00
4.00
6.00
8.00
10.00
0.0 1.0 2.0 3.0 4.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
0.5 1.330 1.347 1.29
1 1.420 1.409 -0.77
2 1.510 1.497 -0.85
5 1.680 1.673 -0.42
10 1.860 1.873 0.71

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0
V3
0Vdc
VDS
0VdcV1
4.5
U1
TPC6012
V_VDS
0V 15mV 30mV 45mV 60mV
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 3A, VGS = 4.5V Measurement Simulation %Error
RDS (on) m 15.000 15.000 0.00

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Time*1mA
0 4n 8n 12n 16n
V(W1:3)
0V
2V
4V
6V
8V
10V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=16V, ID=6A,
VGS=5V
Measurement Simulation %Error
Qgs nC 1.800 1.789 -0.59
Qgd nC 3.400 3.411 0.31
Qg nC 9.000 8.975 -0.28
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
VDD
16
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
6
0
D2
Dbreak
U1
TPC6012

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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.100 122.000 122.090 0.07
0.200 117.000 117.010 0.01
0.500 105.000 104.700 -0.29
1.000 90.000 90.300 0.33
2.000 73.000 72.870 -0.18
5.000 50.000 49.860 -0.28
10.000 35.000 35.515 1.47
20.000 25.000 24.630 -1.48
Simulation
Measurement

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Time
0.960us 0.975us 0.990us 1.005us 1.020us 1.035us 1.050us
V(U1:3) V(U1:1)/2
0V
1.0V
2.0V
3.0V
4.0V
5.0V
6.0V
7.0V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=3A, VDD=10V
VGS=0/5V
Measurement Simulation %Error
ton ns 10.000 10.014 0.14
0
VDD
10Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 10
L2
50nH
R2
4.7
R1
4.7
U1
TPC6012
L1
30nH
RL
3.3

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
5A
10A
15A
20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
V2
5
V1
0
0
V3
0Vdc
U1
TPC6012
VGS=1.8V
4.5
2
2.2
10 2.6
6
2.4
2.8

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V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
VSD
0
Vsense
0Vdc
U1
TPC6012

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0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Source - Drain voltage VSD (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error
Measurement Simulation
0.1 0.4950 0.4898 -1.05
0.2 0.5200 0.5226 0.50
0.5 0.5700 0.5720 0.35
1 0.6150 0.6182 0.51
2 0.6750 0.6758 0.11
5 0.7750 0.7735 -0.19
10 0.8750 0.8720 -0.34
20 1.0100 1.0119 0.19

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Time
19.84us 19.92us 20.00us 20.08us 20.16us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameters Unit Measurement Simulation %Error
trj ns 11.200 11.348 1.32
trb ns 24.800 24.897 0.39
trr ns 36.000 36.245 0.68
V1
TD = 0us
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.60v
TR = 10ns
V2 = 10.50v
R1
50
0
U1
DTPC6012_P

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Reverse Recovery Characteristic Reference
Trj=11.20(ns)
Trb=24.80(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement