This document provides a summary report of the modeling and simulation of a MOSFET transistor. It includes the manufacturer and part number details, as well as the results of simulations characterizing the transistor's electrical properties and performance metrics like drain current, transconductance, switching time, and reverse recovery. The simulations are compared to measurement data and most show good agreement within a few percent error.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: SSM3K320T
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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3
0
4
8
12
0.0 1.0 2.0 3.0 4.0
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs(S)
%Error
Measurement Simulation
0.2 2.330 2.403 3.15
0.5 3.660 3.748 2.41
1 5.200 5.218 0.35
2 7.180 7.218 0.53
4 10.000 9.902 -0.98

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V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
2A
4A
6A
8A
10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V1
0Vdc
V2
10
0
V3
0Vdc
U1
SSM3K320T

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0.000
2.000
4.000
6.000
8.000
10.000
0.0 1.0 2.0 3.0 4.0 5.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
0.2 2.495 2.546 2.03
0.5 2.650 2.643 -0.26
1 2.780 2.754 -0.92
2 2.930 2.915 -0.51
5 3.250 3.244 -0.18
8 3.550 3.490 -1.70

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0
V3
0Vdc
VDS
0Vdc
V1
10
U1
SSM3K320T
V_VDS
0V 20mV 40mV 60mV 80mV 100mV
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 2.1A, VGS = 10V Measurement Simulation %Error
RDS (on) m 38.000 38.000 0.00

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Time*1mA
0 1.0n 2.0n 3.0n 4.0n 5.0n
V(W1:3)
0V
2V
4V
6V
8V
10V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=24V, ID=4.2A,
VGS=10V
Measurement Simulation %Error
Qgs nC 0.650 0.648 -0.33
Qgd nC 1.400 1.396 -0.31
Qg nC 4.600 3.604 -21.65
VDD
24
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
4.2
0
D2
Dbreak
U1
SSM3K320T

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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.100 85.000 84.200 -0.94
0.200 75.000 75.400 0.53
0.500 60.000 60.850 1.42
1.000 50.000 49.600 -0.80
2.000 39.000 39.430 1.10
5.000 28.500 28.550 0.18
10.000 22.000 22.160 0.73
20.000 17.000 17.140 0.82
30.000 15.000 14.744 -1.71
Simulation
Measurement

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Time
0.96us 0.97us 0.98us 0.99us 1.00us 1.01us 1.02us 1.03us 1.04us 1.05us
V(U1:G) V(U1:D)/1.5
0V
2V
4V
6V
8V
10V
12V
14V
16V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=2.1A, VDD=15V
VGS=0/10V
Measurement Simulation %Error
ton ns 9.000 9.053 0.59
0
VDD
15Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
L2
50nH
R2
4.7
R1
4.7
L1
30nH
U1
SSM3K320T
RL
7.1

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10
V_V2
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V3)
0A
2A
4A
6A
8A
10A
Output Characteristic
Circuit Simulation result
Evaluation circuit
V2
1.0V1
0
0
V3
0Vdc
U1
SSM3K320T
VGS=4V
4.56 510

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V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
10mA
100mA
1.0A
10A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit
VSD
0
Vsense
0Vdc
U1
SSM3K320T

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0.0
0.1
1.0
10.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
DrainreversecurrentIDR(A)
Source - Drain voltage VSD (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error
Measurement Simulation
0.01 0.6200 0.6214 0.23
0.02 0.6450 0.6447 -0.04
0.05 0.6750 0.6758 0.12
0.1 0.7000 0.6998 -0.03
0.2 0.7250 0.7247 -0.05
0.5 0.7650 0.7605 -0.59
1 0.7950 0.7924 -0.32
2 0.8300 0.8332 0.39

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Time
19.84us 19.92us 20.00us 20.08us 20.16us 20.24us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Characteristic Unit Measurement Simulation %Error
trj ns 9.600 9.710 1.15
V1
TD = 0us
TF = 5ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 5ns
V2 = 10.70v
R1
50
0
U1
SSM3K320T

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Reverse Recovery Characteristic Reference
Trj=9.60(ns)
Trb=10.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement