SPICE MODEL of SSM3J129TU (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: SSM3J129TU
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
Circuit Configuration
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
U1
SSM3J129TU
1 2
3

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Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A)
gfs
Error (%)
Measurement Simulation
0.100 1.932 2.020 4.58
0.200 2.718 2.827 4.01
0.500 4.281 4.342 1.42
1.000 6.024 5.894 -2.17
2.000 8.333 8.138 -2.35
5.000 12.531 12.288 -1.94

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VDS
-3Vdc
VD_Sense
0Vdc
0
VGS
0Vdc
U1
SSM3J129TU
V_VGS
0V -0.2V -0.6V -1.0V -1.4V -1.8V
I(VD_Sense)
-10mA
-10A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

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10
100
1000
10000
0 0.5 1 1.5 2
-DraincurrentID(mA)
- Gate–source voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(mA)
-VGS(V)
Error (%)
Measurement Simulation
10 0.685 0.704 2.77
100 0.780 0.774 -0.77
200 0.818 0.817 -0.12
500 0.905 0.903 -0.22
1000 1.000 1.001 0.10
2000 1.130 1.144 1.24
5000 1.415 1.436 1.48
10000 1.750 1.782 1.83

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VD_Sense
0Vdc
VDS
-10Vdc
0
VGS
-4.5Vdc
U1
SSM3J129TU
V_VDS
0V 22.2mV 44.4mV 66.6mV 88.8mV 111.0mV
I(VD_Sense)
0A
0.6A
1.2A
1.8A
2.4A
3.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-3A, VGS=-4.5V Measurement Simulation Error (%)
RDS (on) mΩ 37.00 37.00 0.00

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Time*1mS
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:4)
0V
-1.0V
-2.0V
-3.0V
-4.0V
-5.0V
-6.0V
-7.0V
-8.0V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-10V,ID=-4.6A
,VGS=-4.5V
Measurement Simulation Error (%)
Qgs nC 1.300 1.306 0.46
Qgd nC 1.800 1.813 0.72
Qg nC 8.000 7.253 -9.34
I1
TD = 0
TF = 10n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 10n
-
+
W1
ION = 0uA
IOFF = 0.1mAW
0
ID
4.6AdcD1
Dbreak
VDS
-10Vds
U1
SSM3J129TU
V2
0Vdc

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Capacitance Characteristic
Simulation Result
VSD(V)
Cbd(pF)
Error(%)
Measurement Simulation
0.1 200.00 205.00 2.50
0.2 187.00 192.00 2.67
0.5 155.00 158.00 1.94
1 125.00 130.00 4.00
2 82.00 79.00 -3.66
5 54.00 53.20 -1.48
10 34.00 33.10 -2.65
20 22.00 21.20 -3.64
Simulation
Measurement

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Time
1.80us 1.90us 2.00us 2.10us 2.20us 2.30us
V(L1:2)*4 V(L2:2)
2V
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-2A, VDD=-10V
VGS=0/-2.5V
Measurement Simulation Error(%)
ton ns 32.000 32.180 0.56
V2
TD = 2u
TF = 10n
PW = 10u
PER = 2000u
V1 = 0
TR = 10n
V2 = 5
VDD
-10Vdc
L2
50nH
L1
30nH
RL
5
R2
4.7
U1
SSM3J129TU
0
R1
4.7

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(VD_Sense)
0A
-2A
-4A
-6A
-8A
-10A
U1
SSM3J129TU
VD_Sense
0Vdc
VDS
-10Vdc
0
VGS
0Vdc
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS= -1.2V
-1.5V
-4.5V
-1.8V
-2.5V

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V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
100uA
1.0mA
10mA
100mA
1.0A
10A
V1
0Vdc
R1
0.01m
0
U1
SSM3J129TU
BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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0.0001
0.001
0.01
0.1
1
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Drain–source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS(V)
%Error
Measurement Simulation
0.0001 0.400 0.399 -0.19
0.001 0.465 0.466 0.22
0.01 0.535 0.534 -0.19
0.1 0.607 0.605 -0.33
0.2 0.630 0.630 0.00
0.5 0.666 0.669 0.45
1 0.704 0.707 0.43
2 0.750 0.753 0.40
5 0.835 0.832 -0.36

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Time
0.88us 0.96us 1.04us 1.12us 1.20us 1.28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1
TD = 0
TF = 10ns
PW = 1us
PER = 50us
V1 = -9.4V
TR = 10ns
V2 = 10.6V
R1
50
U1
SSM3J129TU
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 14.40 14.440 0.28

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Reverse Recovery Characteristic Reference
Trj=14.40(ns)
Trb=56.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example

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V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
Ropen
100MEG
U1
SSM3J129TU
R1
0.01m
V1
0Vdc
0
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit

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16
Zener Voltage Characteristic Reference