This document summarizes the specifications and simulation results for a 1S1887A general purpose rectifier diode manufactured by Toshiba. It includes the SPICE model parameters, evaluation of the forward current and junction capacitance characteristics through circuit simulation and comparison with measurements, and simulation of the reverse recovery characteristic.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER/ STANDARD
PART NUMBER: 1S1887A
MANUFACTURER: TOSHIBA
REMARK: TC=25C
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
SPICE MODEL
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
*$
* PART NUMBER: 1S1887A
* MANUFACTURER: TOSHIBA
* All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
.MODEL 1S1887A D
+ IS=17.454E-12
+ N=1.2498
+ RS=1.0000E-6
+ IKF=8.3913
+ ISR=0
+ CJO=8.9093E-12
+ M=.34581
+ VJ=.3905
+ BV=400
+ IBV=10.000E-6
+ TT=6.0016E-6
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
V1
0Vdc
D1
1S1887A
R1
0.01m
0
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd(A)
Vfwd(V)
Measurement
Vfwd(V)
Simulation
%Error
0.01 0.650 0.652 -0.277
0.02 0.674 0.674 -0.045
0.05 0.705 0.704 0.156
0.1 0.730 0.727 0.438
0.2 0.750 0.749 0.133
0.5 0.778 0.779 -0.154
1 0.798 0.803 -0.576
2 0.830 0.827 0.373
5 0.862 0.861 0.116

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
V2
0Vdc
D1
1S1887A
0
V1
TD = 0
TF = 50n
PW = 5u
PER = 10u
V1 = 0
TR = 10n
V2 = 400
Junction Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
Measurement
Cj(pF)
Simulation
%Error
0 8.925 8.925 0.000
0.1 8.312 8.240 0.858
0.2 7.783 7.728 0.704
0.5 6.660 6.684 -0.354
1 5.568 5.732 -2.945
2 4.681 4.777 -2.040
5 3.584 3.571 0.352
10 2.895 2.860 1.206
20 2.323 2.272 2.179
50 1.734 1.690 2.498
100 1.387 1.338 3.518

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
D1
1S1887A
R1
50
V1
TD = 0
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.20V
TR = 10ns
V2 = 10.7V
0
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 4.000 us 3.92 us 1.825

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Reverse Recovery Characteristic Reference
Trj =3.12(us)
Trb=0.88(us)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
Measurement