SPICE MODEL of TPCA8105 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: TPCA8105
MANUFACTURER: TOSHIBA
Body Diode (Professional Model) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
3
0
5
10
15
20
25
30
0 2 4 6 8 10
Gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
%Error
Measurement Simulation
0.2 3.900 4.016 2.98
0.5 6.067 6.205 2.27
1 8.500 8.553 0.63
2 11.800 11.680 -1.02
5 17.500 17.286 -1.22
10 23.330 22.802 -2.26

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V1
0Vdc
V2
-10
0
V3
0Vdc
U1
TPCA8105
V_V1
0V -0.5V -1.0V -1.5V -2.0V -2.5V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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5
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5
DrainCurrentID(-A)
Gate - Source Voltage VGS (-V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
%Error
Measurement Simulation
0.2 1.212 1.242 2.43
0.5 1.275 1.300 1.97
1 1.350 1.368 1.31
2 1.450 1.466 1.12
5 1.638 1.672 2.11
10 1.875 1.920 2.42

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V_VDS
0V -10mV -20mV -30mV -40mV -50mV -60mV -70mV
I(V3)
0A
-0.5A
-1.0A
-1.5A
-2.0A
-2.5A
-3.0A
0
U1
TPCA8105
V3
0Vdc
VDS
0Vdc
V1
-4.5
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -3A, VGS= -4.5V Measurement Simulation %Error
RDS (on) mΩ 23.000 23.000 0.00

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VDD
-10
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
6
0
D2
Dbreak
U1
TPCA8105
Time*1mA
0 8n 16n 24n 32n 40n
V(W1:4)
0V
-4V
-8V
-12V
-16V
-20V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -10V ,ID=-6A
,VGS= -5V
Measurement Simulation %Error
Qgs nC 4.400 4.365 -0.80
Qgd nC 4.000 4.018 0.45
Qg nC 18.000 17.662 -1.88

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Capacitance Characteristics
Simulation Result
-VDS (V)
Cbd(pF)
%Error
Measurement Simulation
0.1 240.000 239.000 -0.42
0.2 215.000 216.800 0.84
0.5 178.000 177.000 -0.56
1 140.000 141.800 1.29
2 110.000 108.750 -1.14
5 73.000 72.000 -1.37
10 52.000 52.500 0.96
Simulation
Measurement

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Time
0.94us 0.98us 1.02us 1.06us 1.10us 1.14us
V(U1:4) V(U1:5)/1.2
0V
-2.0V
-4.0V
-6.0V
-8.0V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -3A, VDD= -6V
VGS=0/-5V
Measurement Simulation %Error
ton ns 13.000 12.965 -0.27
0
VDD
-6Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 10
R2
4.7
R1
4.7
L1
30nH
L2
50nH
U1
TPCA8105
RL
2

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V2
-10
V1
0
0
V3
0Vdc
U1
TPCA8105
V_V2
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-2A
-4A
-6A
-8A
-10A
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS= -1.4
-2
-1.6
-2.5
-1.5
-1.7
-1.8
-1.9
-3
-4
-5

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VDS
0
Vsense
0Vdc
U1
TPCA8105
V_VDS
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(Vsense)
-1.0A
-100A
BODY DIODE SPICE MODEL
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit

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12
1.000
10.000
100.000
0 0.4 0.8 1.2 1.6 2
DrainreversecurrentIDR(-A)
Drain - Source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-IDR(A)
VDS (V)
%Error
Measurement Simulation
1 0.660 0.660 -0.02
2 0.715 0.715 0.05
5 0.800 0.799 -0.10
10 0.875 0.876 0.07
20 0.975 0.975 -0.02

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V1
TD = 15ns
TF = 15ns
PW = 2us
PER = 10us
V1 = -9.55V
TR = 10ns
V2 = 10.6v
R1
50
0
U1
DTPCA8105_P
Time
1.6us 1.7us 1.8us 1.9us 2.0us 2.2us 2.3us 2.4us 2.5us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 13.600 13.482 -0.87
trb ns 44.800 44.579 -0.49
trr ns 58.400 58.061 -0.58

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Reverse Recovery Characteristics Reference
Trj= 13.6 (ns)
Trb= 44.8 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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R1
0.001m
V1
0Vdc
0
U1
TPCA8105 R2
100MEG
V_V1
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

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Zener Voltage Characteristics Reference