edcThe valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy
The conduction band is the band of electron orbitals that electrons can jump up into from the valence band when excited. When the electrons are in these orbitals, they have enough energy to move freely in the material
The energy difference between the highest occupied energy state of the valence band and the lowest unoccupied state of the conduction band is called the band gap
The frequency response of RC high pass circuits is summarized. As frequency decreases below the cutoff frequency f1, the capacitor's reactance increases, reducing the output voltage. The cutoff frequency f1 is calculated as 1/(2πRC). Gain is 0 dB at f1 and drops at -20dB/decade below f1. Circuit analysis equations show output voltage decreases proportional to frequency below f1. The circuit thus passes high frequencies above f1 but blocks lower frequencies.
The document discusses the MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It describes MOSFETs as having four terminals (source, gate, drain, body), but the body is often connected to the source, making it a three-terminal device. MOSFETs are widely used for switching and amplifying electronic signals and are the core component of integrated circuits due to their small size. The document then discusses the construction and working of a MOSFET, explaining how applying a voltage to the gate controls the channel between source and drain through which electrons or holes can flow.
Here are the steps to solve this problem:
1) The open-loop transfer function is given as:
G(s) = Kv/s
2) To reduce overshoot, we need to add a compensator to increase the damping. A lag compensator is suitable here.
3) A lag compensator has the transfer function:
Gc(s) = (s+z)/(s+p)
4) To reduce overshoot to less than 20%, we choose z=0.1 and p=0.05
5) The closed-loop transfer function is:
T(s) = Kv(s+0.1)/(s(s+0.05))
This document discusses different types of multivibrators and unijunction transistors (UJTs). It describes astable, monostable, and bistable multivibrators. Astable multivibrators continuously switch between two states to produce a square wave without any input trigger. Monostable multivibrators have one stable state and switch to a transient state upon a trigger, then return to the stable state after a set time. Bistable multivibrators have two stable states and switch between them with an external trigger. The document also discusses UJTs, including their structure, characteristics, and use in relaxation oscillator circuits such as a light flasher.
This document discusses standing waves that occur on transmission lines terminated in an open or short circuit. When a transmission line is terminated in an open or short circuit, the voltage and current waves traveling along the line are fully reflected. The interference between the incident and reflected waves creates a standing wave pattern along the line, with maxima and minima of voltage and current repeating every half wavelength. Key characteristics are described, such as impedance being highest at open/short ends and lowest at quarter wavelength points.
introduction, types & structure of MOSET ,turn ON and OFF of device, working, I-V characteristics of MOSFET,Different regions of operations,applications, adv & disadvantages
The document discusses the MOS transistor structure and its operation. It begins by describing the basic MOS structure consisting of a metal gate, oxide layer, and semiconductor substrate. It then explains the energy band diagrams and how applying different gate biases can cause accumulation, depletion, or inversion at the surface. The document also covers MOSFET operation in different regions, the gradual channel approximation used to derive current equations, threshold voltage, channel length modulation, and the effect of substrate bias.
edcThe valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy
The conduction band is the band of electron orbitals that electrons can jump up into from the valence band when excited. When the electrons are in these orbitals, they have enough energy to move freely in the material
The energy difference between the highest occupied energy state of the valence band and the lowest unoccupied state of the conduction band is called the band gap
The frequency response of RC high pass circuits is summarized. As frequency decreases below the cutoff frequency f1, the capacitor's reactance increases, reducing the output voltage. The cutoff frequency f1 is calculated as 1/(2πRC). Gain is 0 dB at f1 and drops at -20dB/decade below f1. Circuit analysis equations show output voltage decreases proportional to frequency below f1. The circuit thus passes high frequencies above f1 but blocks lower frequencies.
The document discusses the MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It describes MOSFETs as having four terminals (source, gate, drain, body), but the body is often connected to the source, making it a three-terminal device. MOSFETs are widely used for switching and amplifying electronic signals and are the core component of integrated circuits due to their small size. The document then discusses the construction and working of a MOSFET, explaining how applying a voltage to the gate controls the channel between source and drain through which electrons or holes can flow.
Here are the steps to solve this problem:
1) The open-loop transfer function is given as:
G(s) = Kv/s
2) To reduce overshoot, we need to add a compensator to increase the damping. A lag compensator is suitable here.
3) A lag compensator has the transfer function:
Gc(s) = (s+z)/(s+p)
4) To reduce overshoot to less than 20%, we choose z=0.1 and p=0.05
5) The closed-loop transfer function is:
T(s) = Kv(s+0.1)/(s(s+0.05))
This document discusses different types of multivibrators and unijunction transistors (UJTs). It describes astable, monostable, and bistable multivibrators. Astable multivibrators continuously switch between two states to produce a square wave without any input trigger. Monostable multivibrators have one stable state and switch to a transient state upon a trigger, then return to the stable state after a set time. Bistable multivibrators have two stable states and switch between them with an external trigger. The document also discusses UJTs, including their structure, characteristics, and use in relaxation oscillator circuits such as a light flasher.
This document discusses standing waves that occur on transmission lines terminated in an open or short circuit. When a transmission line is terminated in an open or short circuit, the voltage and current waves traveling along the line are fully reflected. The interference between the incident and reflected waves creates a standing wave pattern along the line, with maxima and minima of voltage and current repeating every half wavelength. Key characteristics are described, such as impedance being highest at open/short ends and lowest at quarter wavelength points.
introduction, types & structure of MOSET ,turn ON and OFF of device, working, I-V characteristics of MOSFET,Different regions of operations,applications, adv & disadvantages
The document discusses the MOS transistor structure and its operation. It begins by describing the basic MOS structure consisting of a metal gate, oxide layer, and semiconductor substrate. It then explains the energy band diagrams and how applying different gate biases can cause accumulation, depletion, or inversion at the surface. The document also covers MOSFET operation in different regions, the gradual channel approximation used to derive current equations, threshold voltage, channel length modulation, and the effect of substrate bias.
The document discusses types of field effect transistors (FETs), focusing on metal-oxide-semiconductor FETs (MOSFETs). It describes the basic structure and operation of n-channel and p-channel MOSFETs, including how applying a positive or negative voltage to the gate allows current to flow between the source and drain by creating an electron or hole channel. It also covers key characteristics like the I-V curve and threshold voltage. Finally, it discusses challenges to scaling MOSFETs further and new materials needed like high-k dielectrics to replace the silicon dioxide gate oxide.
The MOSFET is an important element in embedded system design which is used to control the loads as per the requirement. The MOSFET is a high voltage controlling device provides some key features for circuit designers in terms of their overall performance.
The document discusses frequency response of BJT and FET amplifiers. It explains that at low frequencies, coupling and bypass capacitors lower the gain, while at high frequencies, stray and Miller capacitances lower the gain. It provides equations to calculate the lower cutoff frequencies due to various capacitors. A Bode plot indicates the bandwidth and roll-off of gain. For multistage amplifiers, each stage has its own frequency response, and capacitances interact between stages. Square waves can be used to experimentally determine an amplifier's frequency response by examining the output waveform.
Mosfet
MOSFETs have characteristics similar to JFETs and additional characteristics that make them very useful.
There are 2 types:
• Depletion-Type MOSFET
• Enhancement-Type MOSFET
The document compares the applications of bipolar junction transistors (BJTs) and field effect transistors (FETs). BJTs are preferred for low current applications and applications requiring high gain and fast response, while FETs are preferred for low voltage, high frequency, and wide load variation applications. FETs also have advantages of lower power consumption, smaller size, stability at high temperatures, and being easier to fabricate at large scale. Key differences are that BJTs require continuous current to remain on while FETs only require a charged gate, and FETs have extremely high input impedance making them suitable for amplifiers.
This article discusses different power electronics devices that are in use like power diodes, power thyristors, power transistors, IGBT, GTO, IGCT and others. This article will give a basic view of these devices and their operations.
Electromechanical instruments measure electrical quantities using a moving coil within a magnetic field and a pointer to indicate the measured value on a calibrated scale. Permanent magnet moving coil (PMMC) instruments are a common type of deflecting instrument. They contain a permanent magnet that produces a magnetic field, a coil that moves within the field, and a pointer attached to the coil. Three forces act on the moving coil: deflecting force from current in the coil, controlling force from a spiral spring, and damping force from eddy currents induced in the core. Together these forces allow the pointer to indicate the measured value while damping oscillations.
Angle modulation techniques such as frequency modulation (FM) and phase modulation (PM) were introduced. FM varies the carrier frequency according to the message signal, while PM varies the carrier phase. The chapter covered the concepts of instantaneous frequency, bandwidth of angle modulated signals, generation of FM signals through direct and indirect methods, and demodulation of FM signals using discriminators and phase-locked loops. Key advantages of FM over AM include improved noise immunity and resistance to interference at the cost of increased transmission bandwidth.
Basic of semiconductors and optical propertiesKamran Ansari
This presentation explains the band structure, intrinsic semiconductor, extrinsic semiconductor, electrical conductivity, mobility, hall effect, p-n junction diode, tunnel diode and optical properties of the semiconductor.
The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
This document describes the design of an equal split Wilkinson power divider with the following specifications: frequency of 2.4 GHz, source and load impedances of 50 ohms, substrate permittivity of 3.38, substrate thickness of 1.524 mm, and conductor thickness of 0.15 mm. It provides background on Wilkinson power dividers, describes the calculation of microstrip line widths and lengths, shows the simulated circuit schematic and layout, and plots the resulting S-parameters which achieve the desired 3 dB power split with good port matching and isolation as expected.
The document provides an overview of microwave engineering and rectangular waveguides. It defines microwave frequencies as ranging from 1 GHz to 300 GHz. Rectangular waveguides transmit electromagnetic waves through successive reflections from inner walls. Modes in waveguides include transverse electric (TE) and transverse magnetic (TM) modes. The document analyzes the TM and TE modes in rectangular waveguides through solving Maxwell's equations with boundary conditions. Cut-off frequencies above which modes can propagate are determined. Examples demonstrate calculating waveguide parameters and resonant frequencies of cavity resonators.
The document discusses switch realization in power electronics. It begins with an overview of single-, two-, and four-quadrant switches and applications. It then surveys common power semiconductor devices used to realize switches, including diodes, MOSFETs, BJTs, IGBTs, and thyristors. Key aspects of transistor switching losses are examined for a clamped inductive load. Recovered charge in power diodes is also discussed. Realization of different types of switches using these devices is explored through examples like buck converters.
This document provides an overview of magnetic circuits and concepts relevant to electric machines. It discusses:
1. Magnetic materials and circuits, defining terms like magnetic flux, flux density, magnetic field intensity, reluctance, and permeance.
2. How to model magnetic circuits using an equivalent circuit approach, with magnetomotive force driving flux against reluctance.
3. Key relationships like between current and magnetic field intensity defined by Ampere's law, and between field intensity and flux density defined by the material's permeability.
This document discusses transmission lines and the Telegrapher's equation. It begins by introducing transmission lines and their parameters such as resistance, inductance, conductance and capacitance per unit length. It then derives the Telegrapher's equation that describes voltage and current on a transmission line. It shows how the equation can be used to find the propagation constant and solve for voltage and current as a function of position and time. It also discusses phase velocity and provides examples of calculating attenuation constant, phase constant, and phase velocity for different transmission line scenarios.
DSP_FOEHU - Lec 02 - Frequency Domain Analysis of Signals and SystemsAmr E. Mohamed
This document describes a linear system and the convolution integral used to represent it. It defines the convolution integral and shows that a linear system can be represented as the convolution of the input function with the impulse response function. It then provides examples of calculating the output of a linear system using the convolution integral.
Lecture 5 energy bands and charge carriersavocado1111
Energy bands and charge carriers in semiconductors describes how bonding forces in solids lead to the formation of energy bands. In intrinsic semiconductors, there is a small band gap between the valence and conduction bands, allowing a small number of electrons to be thermally excited across the gap. Extrinsic semiconductors are doped with impurities to introduce additional mobile charge carriers, making them either n-type or p-type and allowing electrical conductivity to be controlled. Doping introduces shallow impurity energy levels near the bands which donate or accept electrons.
The document discusses the Discrete Fourier Transform (DFT). It begins by explaining the limitations of the Discrete Time Fourier Transform (DTFT) and Discrete Fourier Series (DFS) from a numerical computation perspective. It then introduces the DFT as a numerically computable transform obtained by sampling the DTFT in the frequency domain. The DFT represents a periodic discrete-time signal using a sum of complex exponentials. It defines the DFT and inverse DFT equations. The document also discusses properties of the DFT such as linearity and time/frequency shifting. Finally, it notes that the Fast Fourier Transform (FFT) implements the DFT more efficiently by constraining the number of points to powers of two.
Branislav K. Nikoli
ć
Department of Physics and Astronomy, University of Delaware, U.S.A.
PHYS 624: Introduction to Solid State Physics
http://www.physics.udel.edu/~bnikolic/teaching/phys624/phys624.html
The document discusses the AM diode envelope detector. It describes how the diode detector detects the envelope of an AM signal using a diode and low-pass filter. The diode rectifies the signal, leaving only the positive or negative half. The filter then removes the high frequencies, leaving an audio signal. While simple and low-cost, the diode detector introduces distortion and has limited sensitivity. However, it remained widely used in radios due to its convenience and low price.
This document provides information on magnetic materials and concepts. It discusses [1] the key differences between diamagnetism, paramagnetism and ferromagnetism. It also covers [2] the differences between hard and soft magnets, including their typical applications. Finally, it explains [3] several important magnetic parameters such as permeability, susceptibility, intensity of magnetization and hysteresis loops.
The periodic table of the elements, in picturesMd Delwar Saeed
The document provides information about the elements in the periodic table, including:
- Each element is described in terms of its atomic number, common physical and chemical properties, natural occurrences, and applications or uses.
- The periodic table is organized into blocks of elements with similar properties, including metals, nonmetals, metalloids, and inert gases.
- Additional information is given about atomic structure, bonding types, radioactive elements, and discovery of new superheavy elements.
The document discusses types of field effect transistors (FETs), focusing on metal-oxide-semiconductor FETs (MOSFETs). It describes the basic structure and operation of n-channel and p-channel MOSFETs, including how applying a positive or negative voltage to the gate allows current to flow between the source and drain by creating an electron or hole channel. It also covers key characteristics like the I-V curve and threshold voltage. Finally, it discusses challenges to scaling MOSFETs further and new materials needed like high-k dielectrics to replace the silicon dioxide gate oxide.
The MOSFET is an important element in embedded system design which is used to control the loads as per the requirement. The MOSFET is a high voltage controlling device provides some key features for circuit designers in terms of their overall performance.
The document discusses frequency response of BJT and FET amplifiers. It explains that at low frequencies, coupling and bypass capacitors lower the gain, while at high frequencies, stray and Miller capacitances lower the gain. It provides equations to calculate the lower cutoff frequencies due to various capacitors. A Bode plot indicates the bandwidth and roll-off of gain. For multistage amplifiers, each stage has its own frequency response, and capacitances interact between stages. Square waves can be used to experimentally determine an amplifier's frequency response by examining the output waveform.
Mosfet
MOSFETs have characteristics similar to JFETs and additional characteristics that make them very useful.
There are 2 types:
• Depletion-Type MOSFET
• Enhancement-Type MOSFET
The document compares the applications of bipolar junction transistors (BJTs) and field effect transistors (FETs). BJTs are preferred for low current applications and applications requiring high gain and fast response, while FETs are preferred for low voltage, high frequency, and wide load variation applications. FETs also have advantages of lower power consumption, smaller size, stability at high temperatures, and being easier to fabricate at large scale. Key differences are that BJTs require continuous current to remain on while FETs only require a charged gate, and FETs have extremely high input impedance making them suitable for amplifiers.
This article discusses different power electronics devices that are in use like power diodes, power thyristors, power transistors, IGBT, GTO, IGCT and others. This article will give a basic view of these devices and their operations.
Electromechanical instruments measure electrical quantities using a moving coil within a magnetic field and a pointer to indicate the measured value on a calibrated scale. Permanent magnet moving coil (PMMC) instruments are a common type of deflecting instrument. They contain a permanent magnet that produces a magnetic field, a coil that moves within the field, and a pointer attached to the coil. Three forces act on the moving coil: deflecting force from current in the coil, controlling force from a spiral spring, and damping force from eddy currents induced in the core. Together these forces allow the pointer to indicate the measured value while damping oscillations.
Angle modulation techniques such as frequency modulation (FM) and phase modulation (PM) were introduced. FM varies the carrier frequency according to the message signal, while PM varies the carrier phase. The chapter covered the concepts of instantaneous frequency, bandwidth of angle modulated signals, generation of FM signals through direct and indirect methods, and demodulation of FM signals using discriminators and phase-locked loops. Key advantages of FM over AM include improved noise immunity and resistance to interference at the cost of increased transmission bandwidth.
Basic of semiconductors and optical propertiesKamran Ansari
This presentation explains the band structure, intrinsic semiconductor, extrinsic semiconductor, electrical conductivity, mobility, hall effect, p-n junction diode, tunnel diode and optical properties of the semiconductor.
The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
This document describes the design of an equal split Wilkinson power divider with the following specifications: frequency of 2.4 GHz, source and load impedances of 50 ohms, substrate permittivity of 3.38, substrate thickness of 1.524 mm, and conductor thickness of 0.15 mm. It provides background on Wilkinson power dividers, describes the calculation of microstrip line widths and lengths, shows the simulated circuit schematic and layout, and plots the resulting S-parameters which achieve the desired 3 dB power split with good port matching and isolation as expected.
The document provides an overview of microwave engineering and rectangular waveguides. It defines microwave frequencies as ranging from 1 GHz to 300 GHz. Rectangular waveguides transmit electromagnetic waves through successive reflections from inner walls. Modes in waveguides include transverse electric (TE) and transverse magnetic (TM) modes. The document analyzes the TM and TE modes in rectangular waveguides through solving Maxwell's equations with boundary conditions. Cut-off frequencies above which modes can propagate are determined. Examples demonstrate calculating waveguide parameters and resonant frequencies of cavity resonators.
The document discusses switch realization in power electronics. It begins with an overview of single-, two-, and four-quadrant switches and applications. It then surveys common power semiconductor devices used to realize switches, including diodes, MOSFETs, BJTs, IGBTs, and thyristors. Key aspects of transistor switching losses are examined for a clamped inductive load. Recovered charge in power diodes is also discussed. Realization of different types of switches using these devices is explored through examples like buck converters.
This document provides an overview of magnetic circuits and concepts relevant to electric machines. It discusses:
1. Magnetic materials and circuits, defining terms like magnetic flux, flux density, magnetic field intensity, reluctance, and permeance.
2. How to model magnetic circuits using an equivalent circuit approach, with magnetomotive force driving flux against reluctance.
3. Key relationships like between current and magnetic field intensity defined by Ampere's law, and between field intensity and flux density defined by the material's permeability.
This document discusses transmission lines and the Telegrapher's equation. It begins by introducing transmission lines and their parameters such as resistance, inductance, conductance and capacitance per unit length. It then derives the Telegrapher's equation that describes voltage and current on a transmission line. It shows how the equation can be used to find the propagation constant and solve for voltage and current as a function of position and time. It also discusses phase velocity and provides examples of calculating attenuation constant, phase constant, and phase velocity for different transmission line scenarios.
DSP_FOEHU - Lec 02 - Frequency Domain Analysis of Signals and SystemsAmr E. Mohamed
This document describes a linear system and the convolution integral used to represent it. It defines the convolution integral and shows that a linear system can be represented as the convolution of the input function with the impulse response function. It then provides examples of calculating the output of a linear system using the convolution integral.
Lecture 5 energy bands and charge carriersavocado1111
Energy bands and charge carriers in semiconductors describes how bonding forces in solids lead to the formation of energy bands. In intrinsic semiconductors, there is a small band gap between the valence and conduction bands, allowing a small number of electrons to be thermally excited across the gap. Extrinsic semiconductors are doped with impurities to introduce additional mobile charge carriers, making them either n-type or p-type and allowing electrical conductivity to be controlled. Doping introduces shallow impurity energy levels near the bands which donate or accept electrons.
The document discusses the Discrete Fourier Transform (DFT). It begins by explaining the limitations of the Discrete Time Fourier Transform (DTFT) and Discrete Fourier Series (DFS) from a numerical computation perspective. It then introduces the DFT as a numerically computable transform obtained by sampling the DTFT in the frequency domain. The DFT represents a periodic discrete-time signal using a sum of complex exponentials. It defines the DFT and inverse DFT equations. The document also discusses properties of the DFT such as linearity and time/frequency shifting. Finally, it notes that the Fast Fourier Transform (FFT) implements the DFT more efficiently by constraining the number of points to powers of two.
Branislav K. Nikoli
ć
Department of Physics and Astronomy, University of Delaware, U.S.A.
PHYS 624: Introduction to Solid State Physics
http://www.physics.udel.edu/~bnikolic/teaching/phys624/phys624.html
The document discusses the AM diode envelope detector. It describes how the diode detector detects the envelope of an AM signal using a diode and low-pass filter. The diode rectifies the signal, leaving only the positive or negative half. The filter then removes the high frequencies, leaving an audio signal. While simple and low-cost, the diode detector introduces distortion and has limited sensitivity. However, it remained widely used in radios due to its convenience and low price.
This document provides information on magnetic materials and concepts. It discusses [1] the key differences between diamagnetism, paramagnetism and ferromagnetism. It also covers [2] the differences between hard and soft magnets, including their typical applications. Finally, it explains [3] several important magnetic parameters such as permeability, susceptibility, intensity of magnetization and hysteresis loops.
The periodic table of the elements, in picturesMd Delwar Saeed
The document provides information about the elements in the periodic table, including:
- Each element is described in terms of its atomic number, common physical and chemical properties, natural occurrences, and applications or uses.
- The periodic table is organized into blocks of elements with similar properties, including metals, nonmetals, metalloids, and inert gases.
- Additional information is given about atomic structure, bonding types, radioactive elements, and discovery of new superheavy elements.
This document provides an overview of magnetostatics and magnetic field calculations. It begins with an introduction to the magnetic dipole moment and magnetic fields. It then discusses Maxwell's equations in magnetostatics and various magnetic field calculations including using the vector potential, scalar potential, and boundary conditions. The document concludes with a discussion of magnetostatic energy and forces. Key topics covered include the magnetic dipole moment, Biot-Savart law, demagnetizing fields, susceptibility, hysteresis, magnetic potentials, and energy associated with magnetic fields and materials.
The tuning of Microwave Circulators utilizing gyromagnetic materials requires the calibration of the biasing magneto-static field, which is mostly supplied by permanent magnets. The permanent magnets have to be tuned down from saturation to an appropriate magnetization stage by means of specialized magnetizing and tuning equipment. A tuning procedure suited for automated adjustment of the saturation level of permanent magnets is described, based on S-parameter measurements. Eigenvalues of the measured 3x3 S-matrices are used to determine a required setting on a computer controllable magnetizer. This will enable a quick and accurate automated tuning process.
lesson 2 digital data acquisition and data processingMathew John
Digital data acquisition and processing are important for nondestructive evaluation (NDE). Data acquisition is needed to obtain quantitative information from test specimens in complex field environments. Data analysis techniques like noise reduction, feature extraction, and multi-parameter discrimination can then be used to interpret the data. Proper data acquisition, digital signal processing algorithms, and discrimination methods now allow NDE procedures to be automated and problems previously considered unsolvable to be addressed.
This document discusses various methods for modeling signals, including deterministic and stochastic processes. It covers topics like the least mean square direct method, Pade approximation, Prony's method, Shanks method, and stochastic processes like ARMA, MA, and AR. It also discusses an application of signal modeling for designing a least squares inverse FIR filter. Model order estimation is noted as an important problem in signal modeling when the correct model order is unknown.
This document discusses modeling of biomedical signals. It introduces autoregressive (AR) and moving average (MA) modeling techniques. For AR modeling, it describes three methods for computing the model parameters: the least squares method, the autocorrelation method, and the covariance method. The least squares method minimizes the mean squared error between predicted and actual signal samples. The autocorrelation and covariance methods relate the AR model parameters to the autocorrelation function of the signal.
The document discusses career development training for early-career researchers. It describes assessing skills, interests, personality and values to develop a personal action plan. Researchers complete exercises to inventory their skills, identify motivated, development and burnout skills, and determine interest types. Understanding these areas can help with career decision making and finding fulfilling work. The training aims to help researchers better understand themselves, identify career goals, and create a plan to achieve those goals.
This document discusses mechanical and electromagnetic waves. Mechanical waves require a medium and include waves on a string, sound waves, and earthquake waves. Electromagnetic waves do not require a medium and include visible light, radio waves, and x-rays. The document also covers wave properties such as amplitude, wavelength, frequency, and speed.
Nail Content Writing & Inspire Readers to RespondBarry Feldman
This document provides guidance on creating effective written content through preparation, planning, and execution. It emphasizes starting with clear objectives and research, then developing an engaging message, story, and voice. The content should elicit emotions, be conversational and fun while calling readers to action. Effective writing requires considering the reader's experience and response above all else.
The document discusses MRI safety guidelines regarding the strong magnetic fields and radiofrequency waves used in MRI. It outlines the basic components of MRI including the magnet and radiofrequency coils. It describes the different types of MRI magnets and important concepts like magnetic fringe fields, the 5 gauss limit and safety zones. The document provides screening guidelines for MRI and discusses potential hazards, risks and side effects of an MRI exam like acoustic noise, claustrophobia and effects of magnetic forces.
This document provides an overview of MRI instrumentation, sequences, and artifacts. It describes various types of RF coils including surface coils, paired saddle coils, Helmholtz coils, and birdcage coils. It also discusses magnets including permanent magnets, electromagnets, and superconducting magnets. Common MRI sequences such as spin echo, gradient echo, inversion recovery, STIR, fat saturation, proton density, diffusion weighted imaging, and FLAIR are explained.
Study of Permanent Magnent Synchronous MacnineRajeev Kumar
With respect of designing a PMSG, the permanent magnetic pole lies on the rotor and armature winding are in the inner part of stator that is electrically connected to the load. Armature winding consists of the set of three conductors which has phase difference 120 derg apart to each other and providing a uniform force or torque on the generator’s rotor. To operate PMGS, it is connected to wind turbine through a shaft without gear box and rotate at slow speed. This uniform torque produced by the resultant magnetic flux which induces current in the armature winding. The stator magnetic field combined spatially with rotor magnetic flux and rotates as the same speed of the rotor. So the two magnetic fields synchronously rotate in PGSM to maintain the relative motion of rotor and stator.
Thus the permanent magnets rotates at constant speed without any DC excitation system, which means it has not required any slip rings and contact brushes to make it more reliability or efficient.
This ppt shows the modelling and simulation of permanent magnet synchronous motor by using torque control method.
And this is the most advanced and soffestigated method to control the pmsm motors.
These slides use concepts from my (Jeff Funk) course entitled analyzing hi-tech opportunities to analyze how transparent electronics are becoming economic feasible. Transparent electronics can turn windows into displays and solar cells and enable more aesthetically pleasing designs. Home, car, and office windows can be used to display information or absorb solar energy. The former is also applicable to contact lenses and glasses. Transparent electronics can also enable new forms of designs such as transparent phones, appliances, and monitors. Improvements in transparent conductive films such as indium tin oxides, other forms of oxides, and graphene enable these transparent displays.
The document discusses transparent electronics and transparent conducting materials. It explains that transparent conductors are neither 100% optically transparent nor metallically conductive due to the contradictory nature of these properties from a band structure perspective. Transparent conducting oxides (TCOs) are commonly used by degenerately doping the material to displace the Fermi level into the conduction band, providing high carrier mobility and low optical absorption. The document also discusses applications of transparent amorphous oxide semiconductors (TAOSs) in displays and chemical detection.
This document provides an overview of VLSI design for a course. It discusses topics including CMOS transistors and logic gates, VLSI levels of abstraction, the VLSI design process, design styles like full custom and ASIC, and trends like Moore's Law. The roadmap outlines topics to be covered like CMOS processing, combinational and sequential circuit design, and a design project to complete a chip. Course objectives are listed relating to VLSI analysis, layout design, and system design skills.
The document discusses infrared (IR) spectroscopy. It explains that IR spectroscopy analyzes molecular vibrations and rotations that are excited when molecules absorb IR radiation. The experimental setup for IR spectroscopy includes an IR source, fore optics to direct the beam at the sample, a monochromator to separate wavelengths, a detector to measure absorption, and a recorder to display the results. Molecular vibrations that can be measured include stretching and bending vibrations of bonds that change the molecule's dipole moment.
The document discusses Sm-Co permanent magnets, including their properties, manufacturing process, temperature compensated and high temperature grades. It describes the microstructure and thermal stability of Sm-Co magnets. Various applications are mentioned that benefit from Sm-Co magnets' high maximum operating temperatures, corrosion resistance and straight-line demagnetization curves, such as traveling wave tubes, ion propulsion systems and medical devices.
Permanent Magnet Options: How To Select The Optimum Solution For Your Applica...John Ormerod
The objective of this presentation is give a flavor of the material options available and highlight some of the important factors and point out a few misconceptions when it comes to selecting the best magnet option.
Quantum Nanomagnetism and related phenomena
Professor Javier Tejada presented on topics related to quantum nanomagnetism including: (1) exchange and anisotropy energies that determine magnetic behavior on small scales; (2) single domain particles whose magnetic moments behave collectively; (3) molecular magnets that exhibit quantum tunneling of magnetization and resonant spin tunneling; and (4) phenomena such as quantum magnetic deflagration and potential evidence of superradiance observed in molecular magnet experiments using pulsed magnetic fields. Future directions may explore stabilizing molecular magnets above liquid nitrogen temperatures and their potential applications in memory and quantum computing.
201606_Ferrites,_CMC,_and_Power_Transformer_(1)eRay Lai
The document discusses soft ferrite specifications for CMCs, power chokes, and transformers. It begins by explaining the importance but also limitations of the B-H curve as a characterization of ferrite materials. Key specifications discussed include permeability, saturation flux density, core loss density, and effective bandwidth. However, the document notes that permeability is nonlinear and dependent on factors like temperature, frequency, and load/current. Real applications also involve more complex geometries compared to an idealized toroid shape. Overall, both material properties from the B-H curve as well as mechanical design aspects are important for magnetic component design.
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Introduction to AI Safety (public presentation).pptx
Magnetic Biasing Techniques for Circulators
1. Th. Lingel 1
Magnetic Biasing Techniques for Circulators,
Analysis and Design Considerations
Thomas Lingel
lingel@IEEE.org
2. Th. Lingel 2
Outline
• Motivation
• Review Units and Magnetic Materials
• Hysteresis & Demagnetization curve of a
Permanent Magnet
• Magnetic Circuit Analysis
• Permanent Magnet Materials
• Temperature Compensation
• Conclusion
This presentation is mainly geared towards biased above ferromagnetic resonance designs for
circulators /isolators although concepts are generally applicable to other devices as well.
4. Th. Lingel 4
• Establish DC bias field inside the ferrite(s) for proper
RF operation over temperature
• Guaranty operation after exposure to extreme
temperature conditions (storage, reflow, etc.)
• Minimize volume of necessary components while
providing efficient shielding
• Cost efficient designs with the right selection of
materials and dimensions
Motivation
5. Th. Lingel 5
• Biot-Savart Law and Ampere’s Law
2
00
4 r
rldI
Bd
rr
r ×
=
π
µ
∫∫ = AdJldH
L
rrrr
NI=
Magnetic Term Symbol SI unit CGS unit conversion factor
Magnetic Induction B Tesla (T) Gauss (G) 1 T = 104 G
Magnetic Field Strength H A/m Oersted (Oe) 1 A/m =4π/103 Oe
Magnetization M A/m emu/cm3 1 A/m = 10-3 emu/cm3
Magnetic Moment m Am2, J/T emu 1 Am2 = 103emu
Flux Φ Wb (Vs) or Tm2 Maxwell or Gcm2 1Wb= 10-8 Mx
Permeability of
free space
µ0 H/m dimensionless 4πx10-7 H/m = 1 (cgs)
Overview Magneto-Static Analysis
• Two common unit Systems
6. Th. Lingel 6
Ferromagnetic Elements (“Iron Triad”)
Currie
Temp.[K]
4πMs[G]
@ 20°C
Fe 1043 21580
Co 1388 17900
Ni 627 6084
Note: Magnetic Materials
typically contain one or
more ferromagnetic
Element
Sm2Co17
7. Th. Lingel 7
H
B
HB 0µ=
B
H
)(0 MHB += µ
Permanent Magnetic Materials
M
H
)(HM
Material Contribution
Soft-Magnetic
Hard-Magnetic
B
H
+ =
9. Th. Lingel 9
0
1000
2000
3000
4000
5000
6000
7000
-40 -20 0 20 40 60 80 100
Alloy
Ferrite
0
1000
2000
3000
4000
5000
6000
7000
0 100 200 300 400 500
H [Oe]
B[G]
1500
1600
1700
1800
1900
2000
2100
2200
2300
0 50 100 150 200
H [Oe]
B[G]
Soft-Magnetic Materials
Properties of Return path
material (typically Steel) will
also have to be included
4πMs[G]
Temperature [°C]
10. Th. Lingel 10
Demagnetizing Field
0=Gl
RBB =
0=H
RB
Gl
RMG BBB <=
B
RMG BBB <=
0=∫ ldH
rr
GGMM lHlH −=
MH
GH
Gl
N S
Permanent Magnet
Old concept to illustrate that a
closed magnetized toroid does
not have an internal magnetic
field strength; this changes once
an air gap is introduced
11. Th. Lingel 11
Magnetic Circuit Analysis
0=⋅= ∫ ldNI H
( )M
G
M
G H
l
l
H −=
0=+ GGMM lHlH
MΘ GΘ
Gl
Ml
GA
MA
• Field Strength in Steel Yoke neglected
• Fringing neglected
Permanent
Magnet
Steel Yoke
Air-Gap
12. Th. Lingel 12
GM Φ=Φ GG HB 0µ= ( )M
G
M
G H
l
l
H −=
G
G
M
MGGMM A
l
l
HABAB 0µ−==
GM
MG
M
M
lA
lA
H
B
−=
0µ
“Load Line” or Permeance Coefficient:
GM
MG
M
M
lA
lA
k
k
H
B
−=
2
1
0µ
Leakage coefficient k1 and Loss
Factor k2 can be used to account
for non-ideal models
Isolated Permanent Magnet,
demagnetization factor N
determined by Geometry
N
N
H
B
m
M −
−=
1
0µ
13. Th. Lingel 13
Bm
Hm
GM
MG
lA
lA
0Pc:Slope µ−=
)(0 MHBM += µ
Operating point
Scaled B-H curve of the air-
gap, mirrored on the B-axis
Permeance Coefficient or Loadline
( )M
G
M
G H
l
l
H −=
Open
Short
Energy
Bd
Hd
14. Th. Lingel 14
Intrinsic Permeance coefficient
Additional magneto-motive force (m.m.f.)
GM
MG
M
MM
lA
lA
H
MH
−=
+
0
0 )(
µ
µ
MB
Hm
Bm
1+== cci
M
M
PP
H
M
ml
Ni
Note: Permeance coefficients are usually
defined as positive numbers
/µ0M
15. Th. Lingel 15
• RF specifications dictate ferrite size and DC bias level
• Magnet size has to be determined and Material selected:
Bias level must be achieved with margin for tuning
Magnet Volume is minimized, Operation at a high
Energy level without risking demagnetization at
extreme temperatures
Magnet is producible (aspect ratios, minimal height)
Magnet fits all other design constraints
(housing size, cost)
Design Approach
Different concepts are presented: Analytical/load-line approach, graphical solution, equivalent network approach
17. Th. Lingel 17
0
2000
4000
6000
8000
10000
12000
-12000 -10000 -8000 -6000 -4000 -2000 0
H [Oe]
B[G]
Source
Load
Example
Ferrite
Diameter: 20mm
Height: 2mm
4πMs: 2000G
HDC: 1000Oe
Magnet SmCo Ceramic
HM [Oe] 5000 2000
BM [G] 5000 2000
Height [mm] 0.4 1
Diameter [mm] 15.49 24.49
Operating point
from Source line
Input
M
FF
M
H
lH
l −=
M
FFF
M
B
AMH
A
)(0 +
=
µ
Comparison: What size magnet do I need
to achieve 1000Oe internal field strength
for a given ferrite using a SmCo or a
Ceramic magnet, both operated on an
idealized demagnetization curve at
maximum energy output
turns out that energy product times
volume has to be the same!
18. Th. Lingel 18
B, H and M do not need to
be parallel/anti-parallel to
each other!
Maxwell-2D BOR-model
]Oe[zH
z
z
H
B
0µ
Ceramic
Magnet
Ferrite
Magnet appears effectively
~2mm smaller in diameter
because of fringing fields
This is an FEM model of the
ceramic magnet case from the
previous slide
Fringing is causing the magnet to
look effectively smaller in diameter,
resulting in a steeper loadline and
lower field strength within the
ferrite
19. Th. Lingel 19
H
B Φ
Θ
Multiply by area
Multiply by height
∫=Θ ldH
rr
∫=Φ AdB
rr
Graphical Solution with “Magnetic
Voltages and Currents”
Graphical solutions can
take nonlinearities into
account
20. Th. Lingel 20
Magnetic Circuit Analysis
Permanent Magnet
Soft-magnetic Material
A
l
RM
µ
=
l
A
PM
µ
=
lHcM =Θ
A
l
RM
µ
=
AMSM π4=Φ
Electrical circuit analysis
tools can be an efficient
way to analyze magnetic
circuits
21. Th. Lingel 21
Scalar Magnetic Potential (Voltage) [A]:
∫=Θ ldH
rr
∫=Φ AdB
rr
Magnetic Flux (Current) [Wb, Vs]:
Φ
Θ
=MRMagnetic Reluctance [A-turn/Wb]:
A
l
RM
µ
=
Hl=Θ
BA=Φ
Also Magnetomotive Force m.m.f [A-turns]
Permeance [H]
Θ
Φ
=P
l
A
P
µ
=
Θ−∇=⇒=×∇ HH
rr
0
Equivalent Networks
23. Th. Lingel 23
Operating point
H
B
Ferrite is modeled like a permanent
magnet, one has to ensure that the
operating point is in the saturated
area of the First Quadrant of the
Hysteresis
• Based on the dimensions of the ideal model a numerical
model can be generated, taking fringing and all material
properties into account
• Energy Product and Permeance Coefficient are
varying within the magnet volume !
This is the trick which was used in the
circuit model on the previous slide
Rather than working with the nonlinear
curve of the softmagnetic ferrite we
assume a linear BH characteristics of a
permanent magnet operated in the first
quadrant
24. Th. Lingel 24
Demagnetization at Temperature Extremes
Recoil on minor
hysteresis,
irreversible
change
- Temperature +
Note: The higher reluctance of ferrites at elevated temperatures reduces the operating
temperature range even further.
Load line is passing the
knee point at elevated
temperature
This leads to
irreversible field loss
26. Th. Lingel 26
Permanent Magnetic Materials
Energy
Prod.
[MGOe]
~ ~ Tc[°C] µ-recoil
AlNiCo ~1.4-10 -0.02 +0.01 ~900 grade dependent (~2..5)
Ceramic ~2.7-4 -0.2 +0.27 ~450 ~1.05-1.15
Sm2Co17 ~18-32 -0.035 -0.2 ~820 ~1.05-1.1
NdFeB ~10-48 -0.12 -0.65 ~350 ~1.05-1.1
Numbers shown are only guidelines, many different materials are available.
A Higher Energy Product is usually traded for lower Hci values.
The change of Br and Hci is not linear, therefore numbers are only rough guidelines.
All sintered magnets are brittle, another alternative are bonded magnets which typically
have lower Energy Products.
°∆
∆
CTB
B
r
r %
°∆
∆
CTH
H
ci
ci %
α β
Reversible Changes
27. Th. Lingel 27
Measurement Results of NdFeB at
different Temperatures
25°C
75°C 100°C 130°C
Limit of the Measurement Equipment
28. Th. Lingel 28
B/µ0M
H
Measured Demagnetization Curve
Tuning
Tuning is necessary in most cases to account for material and mechanical tolerances.
The Operating point in this case will be on a minor hysteresis loop.
Measured Demagnetization
curves at different
demagnetization levels
This is what happens during
calibration “knock-down” of a
circulator, we start at saturation
and find the right minor
hysteresis for the specified
frequency range
29. Th. Lingel 29
Temperature Compensation Elements
−
=
100
0
0
µκ
κµ
µ j
j
P
t
22
0
0
1
ωω
ωω
µ
−
+= m
22
0 ωω
ωω
κ
−
= m
The Bias field needs to be reduced in the above
Resonance operation if the Saturation Magnetization
decreases with increasing temperature, however on-
and off- diagonal elements can not be kept constant
simultaneously by only adjusting the bias level.
Adjustment of µeff can be used as guideline, but the
frequency response has to be the criteria.
Significant change in Br (Ceramic Magnets, NdFeB) make it
easier to temperature compensate when biased above
resonance. Other materials need more/additional temperature
compensation components.
30. Th. Lingel 30
Temperature
Frequency
soft magnetic Flux limiting Airgap
Bandwidth
Nickel content
Less More MoreLess
Operation of Temperature Compensation Alloys
)(thicknessf=α
Summary on how temperature
compensation elements (typically
disks) in a series configuration work
First knee point is related to when
the temperature compensation
material gets saturated, slope of the
center frequency vs temperature
depends on the thickness, second
knee point relates to the Curie
temperature of the temperature
compensation material
Temperature compensation alloys
are typically binary NiFe alloys with
about 30%-32% Nickel content
This plot is a contour plot of center frequency and upper/lower frequency limit vs temperature, it
provides insight on the temperature compensation design and what handles can be adjusted
31. Th. Lingel 31
Conclusion
• The DC bias design is essential for proper RF
performance
• With increasing material costs the optimization of
magneto-static components becomes more important
• Simple circuit models of the magneto-static problem
help to get a basic understanding and to define
starting structures for numerical simulations
• There is no one-fits-all design. Specific material
selection and geometry are driven by actual RF-
specifications and mechanical constraints.