Introduction to BJT
•
0 likes•48 views
This document provides an introduction to the bipolar junction transistor (BJT). It discusses that a BJT contains two p-n junctions, allowing both electrons and holes to conduct. The document outlines that a BJT is made up of two diodes connected back-to-back and was invented in 1947. It also describes the active, reverse active, cutoff, and saturation regions of a BJT and defines the current gains of alpha, beta, and gamma in the common emitter, common base, and common collector configurations, respectively.
Report
Share
Report
Share
Download to read offline
Recommended
Baser resistor
This document discusses transistor biasing using the base resistor method. It begins by explaining that transistor biasing maintains a proper collector current and voltage during signal passage. It then describes the base resistor method, where a high-value resistor is connected from the base to the positive supply to forward bias the base-emitter junction and allow a set base current to flow. The document provides the circuit analysis and equations to calculate the required base resistor value based on the supply voltage, desired base current, and transistor specifications. However, it notes that this method provides poor stabilization against temperature and component variations due to its high stability factor.
Stabilization Of Operating Point | Electrical Engineering
This document discusses the stabilization of operating point in BJTs. It defines the load line and operating point, and explains that the operating point depends on factors like current gain, temperature, and supply voltage variations. An increase in current gain or temperature will shift the operating point towards saturation. It also describes different bias circuit types - fixed bias, collector base bias, fixed bias with emitter resistance, and voltage divider bias - and provides their basic equations.
147352 lm
This document is the lab manual for the Electronic Circuits Lab I course at Rajalakshmi Engineering College in Chennai, India. It contains the syllabus which outlines 8 experiments involving BJT and MOSFET amplifier circuits including fixed bias, common emitter, common collector, Darlington, and differential amplifiers as well as class A and B power amplifiers. The objectives listed for each experiment involve measuring gains, frequency responses, input and output resistances, CMRR, power output, and efficiency.
Voltage Divider Bias - BJT
The document describes a voltage divider bias circuit for a BJT transistor that provides stability using a single voltage supply. It contains a link to a lab manual on building the circuit, lists related BJT experiments, and explains that running a DC analysis will obtain the collector current, base current, base voltage, emitter voltage, and collector voltage values.
Bipolar junction transistor characterstics biassing and amplification, lab 9
This document summarizes an experiment on characterizing the input and output properties of a bipolar junction transistor (BJT) and demonstrating its ability to amplify signals when biased in the active region. Key findings include:
1) Measured voltages and currents matched predicted values closely, both from hand calculations and PSPICE simulations.
2) In the active region, a small AC input signal produced a larger AC output signal, demonstrating amplification. Measured gains matched predictions from an equivalent circuit model.
3) BJT regions of interest - active, cutoff, and saturation - were explored. In the active region the BJT acts as a current source, enabling its use as a signal amplifier.
Field Effect Transistor Biasing and Configuration
Field Effect Transistor Biasing and Configuration
It provides the simplest configuration in understanding the FET. In this slide, it's only described and elaborate the Basic Current Relationship of FET.
Session 4
This document discusses the characteristics and parameters of JFETs (junction field-effect transistors). It defines three key parameters: (1) AC drain resistance, which is the ratio of change in drain-source voltage to change in drain current; (2) transconductance, which is the ratio of change in drain current to change in gate-source voltage; and (3) amplification factor, which is the ratio of change in drain-source voltage to change in gate-source voltage at constant drain current. Examples are given for how to calculate each parameter. Power dissipation in a JFET is also defined.
Transistor biasing
There are four main methods of transistor biasing: base resistor method, emitter bias method, biasing with collector feedback resistor, and voltage-divider bias method. The document then focuses on explaining the base resistor method and voltage-divider bias method in more detail. For the base resistor method, a resistor is used to provide base current, but it has poor stability. For the voltage-divider bias method, two resistors are used to provide stable biasing of the transistor by controlling the base-emitter voltage. This method is widely used due to its stability from the emitter resistor preventing changes in collector current.
Recommended
Baser resistor
This document discusses transistor biasing using the base resistor method. It begins by explaining that transistor biasing maintains a proper collector current and voltage during signal passage. It then describes the base resistor method, where a high-value resistor is connected from the base to the positive supply to forward bias the base-emitter junction and allow a set base current to flow. The document provides the circuit analysis and equations to calculate the required base resistor value based on the supply voltage, desired base current, and transistor specifications. However, it notes that this method provides poor stabilization against temperature and component variations due to its high stability factor.
Stabilization Of Operating Point | Electrical Engineering
This document discusses the stabilization of operating point in BJTs. It defines the load line and operating point, and explains that the operating point depends on factors like current gain, temperature, and supply voltage variations. An increase in current gain or temperature will shift the operating point towards saturation. It also describes different bias circuit types - fixed bias, collector base bias, fixed bias with emitter resistance, and voltage divider bias - and provides their basic equations.
147352 lm
This document is the lab manual for the Electronic Circuits Lab I course at Rajalakshmi Engineering College in Chennai, India. It contains the syllabus which outlines 8 experiments involving BJT and MOSFET amplifier circuits including fixed bias, common emitter, common collector, Darlington, and differential amplifiers as well as class A and B power amplifiers. The objectives listed for each experiment involve measuring gains, frequency responses, input and output resistances, CMRR, power output, and efficiency.
Voltage Divider Bias - BJT
The document describes a voltage divider bias circuit for a BJT transistor that provides stability using a single voltage supply. It contains a link to a lab manual on building the circuit, lists related BJT experiments, and explains that running a DC analysis will obtain the collector current, base current, base voltage, emitter voltage, and collector voltage values.
Bipolar junction transistor characterstics biassing and amplification, lab 9
This document summarizes an experiment on characterizing the input and output properties of a bipolar junction transistor (BJT) and demonstrating its ability to amplify signals when biased in the active region. Key findings include:
1) Measured voltages and currents matched predicted values closely, both from hand calculations and PSPICE simulations.
2) In the active region, a small AC input signal produced a larger AC output signal, demonstrating amplification. Measured gains matched predictions from an equivalent circuit model.
3) BJT regions of interest - active, cutoff, and saturation - were explored. In the active region the BJT acts as a current source, enabling its use as a signal amplifier.
Field Effect Transistor Biasing and Configuration
Field Effect Transistor Biasing and Configuration
It provides the simplest configuration in understanding the FET. In this slide, it's only described and elaborate the Basic Current Relationship of FET.
Session 4
This document discusses the characteristics and parameters of JFETs (junction field-effect transistors). It defines three key parameters: (1) AC drain resistance, which is the ratio of change in drain-source voltage to change in drain current; (2) transconductance, which is the ratio of change in drain current to change in gate-source voltage; and (3) amplification factor, which is the ratio of change in drain-source voltage to change in gate-source voltage at constant drain current. Examples are given for how to calculate each parameter. Power dissipation in a JFET is also defined.
Transistor biasing
There are four main methods of transistor biasing: base resistor method, emitter bias method, biasing with collector feedback resistor, and voltage-divider bias method. The document then focuses on explaining the base resistor method and voltage-divider bias method in more detail. For the base resistor method, a resistor is used to provide base current, but it has poor stability. For the voltage-divider bias method, two resistors are used to provide stable biasing of the transistor by controlling the base-emitter voltage. This method is widely used due to its stability from the emitter resistor preventing changes in collector current.
Analog Electronic Circuits - Module 3
This document provides an overview of frequency response and analysis for amplifiers. It discusses:
- How the voltage gain of an amplifier decreases at low and high frequencies due to external and internal capacitances.
- Key terms like cutoff frequencies (f1 and f2), midband, and roll-off factor.
- Methods for analyzing the frequency response of BJT and JFET amplifier stages to determine dominant capacitances and calculate cutoff frequencies.
- Examples are provided to demonstrate the analysis process.
The document covers frequency response fundamentals and analysis techniques for characterizing amplifier performance over a range of frequencies.
FET AMPLIFIER
Field-effect transistor amplifiers provide an excellent voltage gain with the added feature of high input impedance. They are also low-power-consumption configurations with good frequency range and minimal size and weight.
JFETs, depletion MOSFETs, and MESFETs can be used to design amplifiers having similar voltage gains.
The depletion MOSFET (MESFET) circuit, however, has a much higher input impedance than a similar JFET configuration.
EE 305 Project_1 The Effective External Defibrillators
This document summarizes the design and testing of circuits to generate the waveforms used in external defibrillators. It describes the Lown monophasic waveform and the biphasic truncated exponential waveform (BTEW), which are the two main waveforms used. Circuits were designed using basic electrical components to generate each waveform, and were simulated and tested experimentally. The results showed that the BTEW circuit more closely matched the original waveform specifications, was cheaper to produce, and had advantages for defibrillation effectiveness. Therefore, the biphasic truncated exponential waveform is recommended for use in defibrillators.
UJT (industrial electronic)
The unijunction transistor (UJT) is a three-terminal semiconductor device that has two operating states: on and off. It consists of three layers of semiconductor material. Current flows through two paths - from the emitter to base 1, and from base 2 to base 1. The UJT turns on when the emitter voltage is about 10V higher than the base 1 voltage, and turns off when the emitter voltage drops to about 3V higher. UJTs are used in relaxation oscillators where a capacitor charges until the UJT turns on and discharges the capacitor, then the UJT turns off and the process repeats.
Phy 4240 lec (9) and (10)
1. The document discusses bipolar junction transistors (BJTs), including their construction, operation, and uses. BJTs are made of n-type and p-type semiconductors and have three terminals - emitter, base, and collector.
2. There are two types of BJTs - npn and pnp. BJTs operate in different regions including cutoff, saturation, linear/active, and breakdown. Key equations relate currents and voltages at the terminals.
3. BJTs are used for amplification, switching, and detecting light. They can be configured in common-emitter, common-base, or common-collector circuits and operated in classes A or B for
Field Effect Biasing - Part 1
FET Biasing
1. Fixed Bias Configuration
2. Self Bias Configuration
3. Voltage Divider Configuration
2017
1. The document discusses the basic operation of a BJT transistor. It explains that for a BJT to operate as an amplifier, the base-emitter junction must be forward biased and the base-collector junction must be reverse biased, known as forward-reverse bias.
2. It describes how electrons diffuse through the forward-biased base-emitter junction and into the base region, and then into the reverse-biased base-collector depletion region where they are pulled through by the electric field.
3. It shows that the emitter current is the sum of the collector current and the base current, with the base current being much smaller than the collector current.
Edcqnaunit 4
Transistor biasing circuits establish a quiescent operating point (Q-point) for the transistor in the active region to produce distortion-free amplification. Five common biasing circuits are described: fixed bias, emitter feedback bias, collector feedback bias, collector-emitter feedback bias, and self/emitter bias. The self/emitter bias circuit forms a voltage divider with external resistors to set the base voltage independently of beta, improving stability against temperature variations and beta changes between transistors. Stability is quantified by the stability factor and improved by increasing the emitter resistor relative to the base resistor.
Lecture trans bias_1
This document discusses transistor bias circuits. It explains that a transistor must be properly biased with a DC voltage in order to operate as a linear amplifier. A voltage divider bias circuit is then introduced as a practical method for establishing the DC operating point. The voltage divider uses two resistors connected from the positive supply to ground to set the base voltage. As long as the base current is small compared to the divider current, the base voltage will remain relatively constant. Graphs of transistor characteristics are also used to illustrate how the operating point is established on the load line between cutoff and saturation.
Lecture 2 bjt amplifier p2 (updated 10 october2016)
This document discusses various BJT amplifier configurations including the common-emitter amplifier, common-collector amplifier, Darlington pair, Sziklai pair, and CB amplifier. It explains the use of a capacitor and resistor in the common-emitter amplifier to provide AC grounding and stabilize the collector current. Differential amplifiers are also covered, noting their advantages of high power supply rejection and common mode noise rejection, though they have higher power consumption and require well-matched transistors. Examples and a quiz are provided.
BJT CE
This document provides an overview of bipolar junction transistors (BJTs) including:
- The common emitter, common base, and common collector configurations and their key characteristics like voltage/current gain, input/output impedance, and frequency response.
- How to determine the quiescent operating point and calculate small signal performance for the common emitter configuration.
- Equations for calculating the input and output impedance of the common emitter configuration.
- How coupling and bypass capacitors affect the frequency response and how to determine the lower 3dB frequency cutoff.
Emitter bias method of transistor biasing
Transistor biasing is the process of setting a transistor's operating voltage or current levels so that an AC input signal can be correctly amplified. There are several commonly used biasing methods including emitter biasing. Emitter biasing uses both positive and negative power supplies to provide a stable bias that fluctuates little with temperature variation or transistor replacement. It works by using the voltage drop across an emitter resistor from the emitter current to forward bias the emitter-base junction. Any increase in emitter current further reverse biases the junction, keeping the bias stable. Resistor values are typically chosen such that the emitter resistor voltage drop is 10% of the power supply voltage and the base resistor current
Common Emitter Configuration | Electronical Engineering
In this configuration base is common for both input and output, input signal is applied between emitter and base terminals; and output is collected between collector and base terminals. Copy the link given below and paste it in new browser window to get more information on Common Emitter Configuration:- http://www.transtutors.com/homework-help/electrical-engineering/transistors/common-emitter-configuration.aspx
Edcqnaunit 7
This document discusses three types of FET amplifiers:
1. Common source amplifier - The most widely used FET amplifier design. It consists of an N-channel JFET in a common source configuration with the gate biased using a potential divider to operate in saturation. The input signal is applied to the gate and the output is taken from the drain.
2. Common gate amplifier - Used as a current buffer or voltage amplifier. The source is the input, drain is the output, and gate is common to both. It has high input impedance but low voltage gain.
3. Common drain (source follower) amplifier - Used as a voltage buffer to transform impedances. The gate is the input, source is
MOSFET as an Amplifier
A lecture based on working of a MOSFET as an amplifier along with the small signal analysis of the same.
FET
1) There are four basic configurations for a single-stage FET amplifier: common source (CS), source resistor (SR), common gate (CG), and source follower (SF)/common drain (CD).
2) Each configuration has different characteristics for input resistance, output resistance, voltage gain, and current gain. The CS configuration provides high voltage and current gain but the SF configuration provides low voltage gain with high current gain.
3) Detailed derivations of the small-signal models and equations for input resistance, output resistance, voltage gain, and current gain are provided for each configuration.
Common Emitter Amplifier : BJT
The document provides instructions for constructing and analyzing a common emitter amplifier circuit. It aims to help understand the function, construction, and biasing of such an amplifier, as well as perform small signal analysis. Key steps include using an AC source at the base instead of DC, setting the collector resistance to 8 ohms, and analyzing the output waveform compared to the input. The conclusion confirms that the output is completely realized but inverted compared to the input.
Unijunction transistor
The document discusses the unijunction transistor (UJT), a three-terminal semiconductor device with one PN junction. It consists of a lightly doped silicon bar with a heavily doped P-type material alloyed to one side, forming the single junction. The UJT has three terminals - an emitter, and two bases B1 and B2. When a voltage is applied across B2-B1, the UJT exhibits a negative resistance characteristic, allowing it to be used as an oscillator. Once triggered by a pulse at one of its terminals, the emitter current increases regeneratively until a limiting value is reached. Applications of the UJT include phase control, switching, pulse generation, and timing circuits.
Bipolar Transistor
Bipolar Junction Transistors consist of three layers - an emitter, base, and collector. The document discusses the construction and operation of NPN and PNP transistors. It describes the common-base, common-emitter, and common-collector configurations. Key parameters discussed include current gain (beta), input and output characteristics, and the limits of transistor operation. BJT transistors are used as amplifiers and their performance depends on proper biasing within the active region and not exceeding maximum voltage, current, or power ratings.
Common Source Characteristics - JFET
The document provides instructions for conducting an experiment to characterize a JFET in common source configuration by plotting its drain current (ID) versus drain-source voltage (VDS) for different gate-source voltages (VGS). Specifically, it describes biasing the JFET in a fixed-bias configuration, varying VDS from 0 to 10V and VGS from 0 to 2V using two DC sources, and observing the resulting output characteristics on a plotter. The characteristics show ID increasing linearly with VDS until pinch-off, at which point the JFET acts as a constant current source for VDS above pinch-off voltage.
Basic electronics - Bi Junction Terminals 01.pptx
This document discusses the characteristics of bipolar junction transistors (BJTs). It begins by listing the learning objectives, which are to discuss BJT operation, draw common base and common emitter configurations, and explain their input and output characteristics. It then provides an introduction to BJTs, describing their 3-terminal 2-junction structure and the NPN and PNP types. The rest of the document discusses BJT configurations, currents, gains, input/output characteristics, and includes example problems.
Chp1 1 bjt [read only]
A bipolar junction transistor (BJT) has three regions - the emitter, base, and collector - separated by two pn junctions. In normal operation, the base-emitter junction is forward-biased and the base-collector junction is reverse-biased. The current flowing into the base controls the much larger currents flowing between the collector and emitter. BJTs can be used as amplifiers, switches, or other circuit elements depending on the biasing conditions. Key specifications include the current gain and maximum voltage and current ratings.
More Related Content
What's hot
Analog Electronic Circuits - Module 3
This document provides an overview of frequency response and analysis for amplifiers. It discusses:
- How the voltage gain of an amplifier decreases at low and high frequencies due to external and internal capacitances.
- Key terms like cutoff frequencies (f1 and f2), midband, and roll-off factor.
- Methods for analyzing the frequency response of BJT and JFET amplifier stages to determine dominant capacitances and calculate cutoff frequencies.
- Examples are provided to demonstrate the analysis process.
The document covers frequency response fundamentals and analysis techniques for characterizing amplifier performance over a range of frequencies.
FET AMPLIFIER
Field-effect transistor amplifiers provide an excellent voltage gain with the added feature of high input impedance. They are also low-power-consumption configurations with good frequency range and minimal size and weight.
JFETs, depletion MOSFETs, and MESFETs can be used to design amplifiers having similar voltage gains.
The depletion MOSFET (MESFET) circuit, however, has a much higher input impedance than a similar JFET configuration.
EE 305 Project_1 The Effective External Defibrillators
This document summarizes the design and testing of circuits to generate the waveforms used in external defibrillators. It describes the Lown monophasic waveform and the biphasic truncated exponential waveform (BTEW), which are the two main waveforms used. Circuits were designed using basic electrical components to generate each waveform, and were simulated and tested experimentally. The results showed that the BTEW circuit more closely matched the original waveform specifications, was cheaper to produce, and had advantages for defibrillation effectiveness. Therefore, the biphasic truncated exponential waveform is recommended for use in defibrillators.
UJT (industrial electronic)
The unijunction transistor (UJT) is a three-terminal semiconductor device that has two operating states: on and off. It consists of three layers of semiconductor material. Current flows through two paths - from the emitter to base 1, and from base 2 to base 1. The UJT turns on when the emitter voltage is about 10V higher than the base 1 voltage, and turns off when the emitter voltage drops to about 3V higher. UJTs are used in relaxation oscillators where a capacitor charges until the UJT turns on and discharges the capacitor, then the UJT turns off and the process repeats.
Phy 4240 lec (9) and (10)
1. The document discusses bipolar junction transistors (BJTs), including their construction, operation, and uses. BJTs are made of n-type and p-type semiconductors and have three terminals - emitter, base, and collector.
2. There are two types of BJTs - npn and pnp. BJTs operate in different regions including cutoff, saturation, linear/active, and breakdown. Key equations relate currents and voltages at the terminals.
3. BJTs are used for amplification, switching, and detecting light. They can be configured in common-emitter, common-base, or common-collector circuits and operated in classes A or B for
Field Effect Biasing - Part 1
FET Biasing
1. Fixed Bias Configuration
2. Self Bias Configuration
3. Voltage Divider Configuration
2017
1. The document discusses the basic operation of a BJT transistor. It explains that for a BJT to operate as an amplifier, the base-emitter junction must be forward biased and the base-collector junction must be reverse biased, known as forward-reverse bias.
2. It describes how electrons diffuse through the forward-biased base-emitter junction and into the base region, and then into the reverse-biased base-collector depletion region where they are pulled through by the electric field.
3. It shows that the emitter current is the sum of the collector current and the base current, with the base current being much smaller than the collector current.
Edcqnaunit 4
Transistor biasing circuits establish a quiescent operating point (Q-point) for the transistor in the active region to produce distortion-free amplification. Five common biasing circuits are described: fixed bias, emitter feedback bias, collector feedback bias, collector-emitter feedback bias, and self/emitter bias. The self/emitter bias circuit forms a voltage divider with external resistors to set the base voltage independently of beta, improving stability against temperature variations and beta changes between transistors. Stability is quantified by the stability factor and improved by increasing the emitter resistor relative to the base resistor.
Lecture trans bias_1
This document discusses transistor bias circuits. It explains that a transistor must be properly biased with a DC voltage in order to operate as a linear amplifier. A voltage divider bias circuit is then introduced as a practical method for establishing the DC operating point. The voltage divider uses two resistors connected from the positive supply to ground to set the base voltage. As long as the base current is small compared to the divider current, the base voltage will remain relatively constant. Graphs of transistor characteristics are also used to illustrate how the operating point is established on the load line between cutoff and saturation.
Lecture 2 bjt amplifier p2 (updated 10 october2016)
This document discusses various BJT amplifier configurations including the common-emitter amplifier, common-collector amplifier, Darlington pair, Sziklai pair, and CB amplifier. It explains the use of a capacitor and resistor in the common-emitter amplifier to provide AC grounding and stabilize the collector current. Differential amplifiers are also covered, noting their advantages of high power supply rejection and common mode noise rejection, though they have higher power consumption and require well-matched transistors. Examples and a quiz are provided.
BJT CE
This document provides an overview of bipolar junction transistors (BJTs) including:
- The common emitter, common base, and common collector configurations and their key characteristics like voltage/current gain, input/output impedance, and frequency response.
- How to determine the quiescent operating point and calculate small signal performance for the common emitter configuration.
- Equations for calculating the input and output impedance of the common emitter configuration.
- How coupling and bypass capacitors affect the frequency response and how to determine the lower 3dB frequency cutoff.
Emitter bias method of transistor biasing
Transistor biasing is the process of setting a transistor's operating voltage or current levels so that an AC input signal can be correctly amplified. There are several commonly used biasing methods including emitter biasing. Emitter biasing uses both positive and negative power supplies to provide a stable bias that fluctuates little with temperature variation or transistor replacement. It works by using the voltage drop across an emitter resistor from the emitter current to forward bias the emitter-base junction. Any increase in emitter current further reverse biases the junction, keeping the bias stable. Resistor values are typically chosen such that the emitter resistor voltage drop is 10% of the power supply voltage and the base resistor current
Common Emitter Configuration | Electronical Engineering
In this configuration base is common for both input and output, input signal is applied between emitter and base terminals; and output is collected between collector and base terminals. Copy the link given below and paste it in new browser window to get more information on Common Emitter Configuration:- http://www.transtutors.com/homework-help/electrical-engineering/transistors/common-emitter-configuration.aspx
Edcqnaunit 7
This document discusses three types of FET amplifiers:
1. Common source amplifier - The most widely used FET amplifier design. It consists of an N-channel JFET in a common source configuration with the gate biased using a potential divider to operate in saturation. The input signal is applied to the gate and the output is taken from the drain.
2. Common gate amplifier - Used as a current buffer or voltage amplifier. The source is the input, drain is the output, and gate is common to both. It has high input impedance but low voltage gain.
3. Common drain (source follower) amplifier - Used as a voltage buffer to transform impedances. The gate is the input, source is
MOSFET as an Amplifier
A lecture based on working of a MOSFET as an amplifier along with the small signal analysis of the same.
FET
1) There are four basic configurations for a single-stage FET amplifier: common source (CS), source resistor (SR), common gate (CG), and source follower (SF)/common drain (CD).
2) Each configuration has different characteristics for input resistance, output resistance, voltage gain, and current gain. The CS configuration provides high voltage and current gain but the SF configuration provides low voltage gain with high current gain.
3) Detailed derivations of the small-signal models and equations for input resistance, output resistance, voltage gain, and current gain are provided for each configuration.
Common Emitter Amplifier : BJT
The document provides instructions for constructing and analyzing a common emitter amplifier circuit. It aims to help understand the function, construction, and biasing of such an amplifier, as well as perform small signal analysis. Key steps include using an AC source at the base instead of DC, setting the collector resistance to 8 ohms, and analyzing the output waveform compared to the input. The conclusion confirms that the output is completely realized but inverted compared to the input.
Unijunction transistor
The document discusses the unijunction transistor (UJT), a three-terminal semiconductor device with one PN junction. It consists of a lightly doped silicon bar with a heavily doped P-type material alloyed to one side, forming the single junction. The UJT has three terminals - an emitter, and two bases B1 and B2. When a voltage is applied across B2-B1, the UJT exhibits a negative resistance characteristic, allowing it to be used as an oscillator. Once triggered by a pulse at one of its terminals, the emitter current increases regeneratively until a limiting value is reached. Applications of the UJT include phase control, switching, pulse generation, and timing circuits.
Bipolar Transistor
Bipolar Junction Transistors consist of three layers - an emitter, base, and collector. The document discusses the construction and operation of NPN and PNP transistors. It describes the common-base, common-emitter, and common-collector configurations. Key parameters discussed include current gain (beta), input and output characteristics, and the limits of transistor operation. BJT transistors are used as amplifiers and their performance depends on proper biasing within the active region and not exceeding maximum voltage, current, or power ratings.
Common Source Characteristics - JFET
The document provides instructions for conducting an experiment to characterize a JFET in common source configuration by plotting its drain current (ID) versus drain-source voltage (VDS) for different gate-source voltages (VGS). Specifically, it describes biasing the JFET in a fixed-bias configuration, varying VDS from 0 to 10V and VGS from 0 to 2V using two DC sources, and observing the resulting output characteristics on a plotter. The characteristics show ID increasing linearly with VDS until pinch-off, at which point the JFET acts as a constant current source for VDS above pinch-off voltage.
What's hot (20)
EE 305 Project_1 The Effective External Defibrillators
EE 305 Project_1 The Effective External Defibrillators
Lecture 2 bjt amplifier p2 (updated 10 october2016)
Lecture 2 bjt amplifier p2 (updated 10 october2016)
Common Emitter Configuration | Electronical Engineering
Common Emitter Configuration | Electronical Engineering
Similar to Introduction to BJT
Basic electronics - Bi Junction Terminals 01.pptx
This document discusses the characteristics of bipolar junction transistors (BJTs). It begins by listing the learning objectives, which are to discuss BJT operation, draw common base and common emitter configurations, and explain their input and output characteristics. It then provides an introduction to BJTs, describing their 3-terminal 2-junction structure and the NPN and PNP types. The rest of the document discusses BJT configurations, currents, gains, input/output characteristics, and includes example problems.
Chp1 1 bjt [read only]
A bipolar junction transistor (BJT) has three regions - the emitter, base, and collector - separated by two pn junctions. In normal operation, the base-emitter junction is forward-biased and the base-collector junction is reverse-biased. The current flowing into the base controls the much larger currents flowing between the collector and emitter. BJTs can be used as amplifiers, switches, or other circuit elements depending on the biasing conditions. Key specifications include the current gain and maximum voltage and current ratings.
What are and how are PNP NPN Transistor materials are made ?
Here you will know how are PNP and NPN Transistor materials are made.And also where they are used in electrical engineering.
Presentation on bjt configuration
I presented this slid in my last presentation about bipolar junction transistor configuration.Now I'm sharing this with all of you guys it can be helpful for you.
Look at the beautiful view of forgiveness of mistakes.
Thank you
Study of Transistor Characteristics in Common Emitter Amplifier.pdf
1. The document describes an experiment to study the characteristics of a bipolar junction transistor (BJT) operating in common emitter configuration as an amplifier.
2. Key aspects of the experiment include obtaining the input characteristics by varying the base-emitter voltage at constant collector-emitter voltages and measuring the base current, and obtaining the output characteristics by varying the collector voltage at constant base currents and measuring the collector current.
3. The results are presented in tables showing voltages, currents, and calculations to determine characteristics, along with graphs plotting the input and output characteristics. Simulated data and graphs are also provided for comparison with experimental measurements.
TRANSISTORS
The document discusses the history and operation of transistors, beginning with the point-contact transistor invented in 1947 by Bardeen, Brattain, and Shockley at Bell Labs. It then covers the basic structure and types of bipolar junction transistors, including NPN and PNP, as well as their operating regions and usage as switches and amplifiers. New developments in transistor technology include 3D transistors using tri-gate designs for improved power efficiency and performance.
BIPOLAR JUNCTION TRANSISTOR
- The BJT is constructed with 3 doped semiconductor regions (emitter, base, collector) separated by 2 p-n junctions.
- For operation, the base-emitter junction is forward-biased while the base-collector junction is reverse-biased.
- Electrons diffuse from the emitter into the base and are swept into the collector region, producing a current flow from collector to emitter. The base current controls the much larger collector current.
Ee395 lab 1 - bjt - loren - victor - taylor
This lab report examines two BJT circuits using an NPN transistor. The first is a common emitter circuit and the second adds an emitter resistor and voltage divider bias. The objective is to analyze, simulate, and test the circuits to understand BJT operation. Initial tests found inaccuracies due to using incorrect transistor beta values. Rechecking the beta improved results to within 10% of calculations. PSpice simulations had larger errors since its beta did not match the physical transistor. Overall the lab helped gain experience with BJT circuit design and analysis.
Chapter 4 bjt
The given circuit is a CB amplifier.
(a) The dc operating point or Q-point is midway between cutoff and saturation points.
Cutoff point: IC = 0, VCE = 10 V
Saturation point: IC = 2 mA, VCE = 0.2 V
Q-point: IC = 1 mA, VCE = 5 V
(b) Maximum unclipped signal is the distance between Q-point and either cutoff or saturation point.
Maximum peak-to-peak signal = Saturation point - Cutoff point
= 0.2 V - 10 V = 9.8 V
(c) For no clipping, the ac signal amplitude should be less than half of the maximum
BJT by Emroz Sardar.pptx
A Bipolar Junction Transistor is a three-terminal semiconductor device consisting of two p-n junctions which are able to amplify or magnify a signal. It is a current controlled device. The three terminals of the BJT are the base, the collector and the emitter. A BJT is a type of transistor that uses both electrons and holes as charge carriers
power point presentation on BJT for beginers
1) A bipolar junction transistor (BJT) has three doped semiconductor regions (emitter, base, collector) separated by two pn junctions. BJTs can be npn or pnp type.
2) For normal operation, one junction is forward biased (BE for npn, CE for pnp) while the other is reverse biased. This allows a small base current to control a larger collector current.
3) BJTs are used in amplifier and switching applications. In amplifiers, the transistor may be configured in common-emitter, common-base or common-collector modes.
BJT..pptx
This document presents information about transistor configurations including common base, common emitter, and common collector. It discusses the characteristics of each configuration such as input and output impedance levels. The common emitter configuration is described as the most widely used as it provides medium gain and impedance levels with a 180 degree phase change. Alpha, beta, and gamma values are defined as the current gain factors for each configuration. The relationships between these values and uses of transistors in applications like audio amplification are also summarized.
Bipolar Junction Transistor (BJT).pptx
The document outlines the key topics in a presentation on bipolar junction transistors, including:
- The formation of NPN and PNP junctions and the operation of NPN transistors.
- The three transistor circuit configurations - common base, common emitter, and common collector - and their current gain characteristics.
- Expressions for collector current and concepts like reverse saturation current and ICEO.
- Static characteristics like input and output characteristics are examined for each configuration.
Chapter 6: Bipolar Junction Transistors (BJTs)
The document describes the basic structure and operation of bipolar junction transistors (BJTs). It discusses the npn and pnp transistor structure, which consists of an emitter, base, and collector region separated by two PN junctions. The document outlines the characteristics of npn and pnp transistors, including their biasing conditions and current flow. It also covers key BJT parameters such as beta, cutoff and saturation regions, load lines, and different biasing configurations including fixed bias and emitter bias networks.
Physics Investigatory Project
The document is a student project report on using transistors as amplifiers and switches. It includes an introduction describing transistors, the circuit diagram used, procedures followed, observations recorded, and analysis of results. Key findings are that the transistor acts as an amplifier in the active region when the base-emitter junction is forward biased and base-collector junction is reverse biased, and acts as a switch in the saturation region when both junctions are forward biased.
Electronics and Communication Engineering
Electronics and Communication Engineering is the Branch of Engineering. Electronics and Communication Engineering field requires an understanding of core areas including Engineering Graphics, Computer Programming,Electronics Devices and Circuits-I, Network Analysis, Signals and Systems, Communication Systems, Electromagnetics Engineering, Digital Signal Processing, Embedded Systems, Microprocessor and Computer Architecture. Ekeeda offers Online Mechanical Engineering Courses for all the Subjects as per the Syllabus.
Visit : https://ekeeda.com/streamdetails/stream/Electronics-and-Communication-Engineering
EC6202 ELECTRONIC DEVICES AND CIRCUITS Unit 2
BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristor and IGBT Structure and characteristics.
unit 2 part1 (1).pptx
This document discusses different types of transistors. It begins by defining what a transistor is and who invented it. It then describes the basic components of a bipolar junction transistor (BJT) including the emitter, base, and collector. It explains that BJTs can be NPNP or PNP type depending on layer orientation. The document discusses operating regions for transistors based on biasing of the emitter and collector junctions. It also covers different transistor configurations including common base, common emitter, and common collector. Input and output characteristics are described for the common base and common emitter configurations. Current gain is defined and equations are provided.
Shubham shakya BJT Basic in Hindi
This document provides an overview of bipolar junction transistors (BJTs). It discusses the basic construction and operation of NPN and PNP BJTs, including their two PN junctions. The document explains how BJTs are biased in forward and reverse configurations and the resulting active, saturation, and cutoff regions. It also covers the common emitter, common base, and common collector transistor configurations, how current gains are defined for each, and the relationships between various currents. Input and output characteristics are presented for the common base and common emitter configurations.
EC8353 ELECTRONIC DEVICES AND CIRCUITS Unit 2
BJT, JFET, MOSFET- structure, operation, characteristics and Biasing UJT, Thyristor and IGBT Structure and characteristics.
Similar to Introduction to BJT (20)
What are and how are PNP NPN Transistor materials are made ?
What are and how are PNP NPN Transistor materials are made ?
Study of Transistor Characteristics in Common Emitter Amplifier.pdf
Study of Transistor Characteristics in Common Emitter Amplifier.pdf
More from VARUN KUMAR
Distributed rc Model
This document discusses and compares lumped RC and distributed RC models. It describes:
1) Lumped RC models treat a wire as a single resistor and capacitor in series, which is inaccurate for long wires. Distributed RC models account for resistance and capacitance per unit length.
2) Distributed RC lines can be modeled by RC trees or RC ladders, where Elmore delay formulas are derived.
3) Delay and time constant in a distributed RC line increase quadratically with wire length, whereas lumped RC models overestimate this relationship.
4) The behavior of a distributed RC line is described by a diffusion equation relating voltage, distance, resistance, and capacitance over time.
Electrical Wire Model
This document discusses different electrical wire models used to analyze circuit behavior. It begins by introducing lumped models that simplify distributed parasitic elements into single circuit components. A common lumped model is the RC model, which approximates a wire's distributed resistance and capacitance. For long wires, a distributed RC model more accurately captures the wire's continuous resistance and capacitance per unit length. The document concludes by comparing lumped and distributed RC wire models.
Interconnect Parameter in Digital VLSI Design
This document discusses key interconnect parameters for VLSI design including capacitance, resistance, and inductance. It notes that as device sizes shrink, wire lengths increase which leads to greater parasitic effects that must be considered. The document outlines how capacitance depends on shape and surroundings and can be modeled as parallel plates. Resistance is defined by resistivity, length and cross-sectional area, with aluminum a common interconnect material. Inductance also becomes important at higher frequencies. Models are simplified by ignoring less dominant effects.
Introduction to Digital VLSI Design
The document introduces digital VLSI design and CMOS technology. It discusses the motivation for digital design, noting advantages like noise immunity and information security. VLSI allows for miniaturization and lower power consumption by increasing storage and speed capabilities. CMOS is introduced as an important ingredient for VLSI design. CMOS combines p-MOS and n-MOS and has low power consumption and noise resistance. It can be used to build inverters, buffers, adders, and other logic gates and chips like microprocessors. The final slide depicts a CMOS inverter.
Challenges of Massive MIMO System
This document summarizes a presentation on analyzing massive MIMO systems under different wireless scenarios. It begins with background on mobile communication generations and challenges with exponentially growing data demand. It then discusses massive MIMO as a promising technology for 5G, noting it can support large numbers of users simultaneously and increase spectrum efficiency. However, challenges include hardware mismatch in TDD systems and highly correlated spatial gains. The presentation outlines analyzing the impact of these issues, as well as the feasibility of massive MIMO in cooperative networks. It proposes modeling hardware mismatch and deriving the probability distribution functions of amplitude and phase mismatches. It also discusses using different precoding techniques like zero-forcing to calculate signal-to-interference-plus-noise ratio in the down
E-democracy or Digital Democracy
The document discusses e-democracy, which uses information and communication technologies to expand and improve democratic processes. E-democracy can enhance democracy by enabling electronic voting, improving civic engagement through online political discussions and information sharing, and allowing more direct participation between citizens and representatives. However, e-democracy systems face issues like ensuring effective citizen participation, voting equality, and addressing cybersecurity risks and protecting sensitive user data. Digital inclusion is also important to ensure all citizens can participate in e-democracy.
Ethics of Parasitic Computing
This document discusses parasitic computing, which involves getting another program to perform complex computations without its knowledge. Specifically, it can exploit standard internet protocols like TCP and HTTP. Some potential ethical issues are discussed, such as privacy and consent. The conclusion is that an idealist viewpoint may see ethical problems with parasitic computing, while a pragmatist may not, as it relies on normal interactions over the internet that systems implicitly consent to by connecting.
Action Lines of Geneva Plan of Action
The document outlines the action lines of the Geneva Plan of Action, which includes 5 main points: 1) The role of governments and stakeholders in promoting ICTs, 2) Developing information and communication infrastructure, 3) Increasing access to information and knowledge, 4) Engaging in capacity building, and 5) Building confidence and security in using ICTs. It provides specific recommendations under each point, such as developing national ICT strategies, improving connectivity for schools and libraries, establishing public access points, and supporting research and development.
Geneva Plan of Action
The Geneva Plan of Action outlines the World Summit on the Information Society (WSIS) process which took place in two phases. The first phase was held in Geneva in 2003 and resulted in a plan of action. The second phase was held in Tunis in 2005 and focused on implementing the Geneva plan and reaching agreements on internet governance and financing mechanisms. Key outcomes included connecting villages, schools, and other institutions to ICTs and ensuring over half the world's population has access to ICTs. UNESCO played a prominent role in both phases and the follow up processes by focusing on themes like education, cultural diversity, and access to information.
Fair Use in the Electronic Age
This document discusses fair use of copyrighted works in the electronic age. It outlines that individuals, libraries, and educational institutions should be able to make lawful uses of copyrighted works electronically without transaction fees. This includes uses like privately viewing or browsing publicly marketed works, experimenting with variations for fair use purposes, and providing works for study and research. Libraries should also be able to preserve electronic materials and provide them electronically without liability for user actions. Licenses should not restrict fair uses, and public domain works should be freely available electronically for non-profit education.
Software as a Property
This document discusses software as property and whether copying proprietary software is wrong. It outlines the history of intellectual property rights, including John Locke's labor theory of property which argues people have a right to what they produce. While software challenges traditional notions of property, most countries consider copying proprietary software without a license to be illegal, though fair use exceptions exist for purposes like criticism, teaching, and research. The act of copying alone may not be wrong philosophically, but using the copied software deprives authors of payment for their labor.
Orthogonal Polynomial
1. The document discusses orthogonal polynomials, which are polynomial sequences where any two different polynomials are orthogonal under some inner product.
2. Some common orthogonal polynomials are Legendre polynomials, Hermite polynomials, Laguerre polynomials, and Chebyshev polynomials.
3. It is proven that for Legendre polynomials pm and pn, the integral from -1 to 1 of pm(x)pn(x)dx is equal to 0 when m is not equal to n, and is equal to 2/(2n+1) when m is equal to n. This shows the orthogonal property of Legendre polynomials.
Patent Protection
This document discusses patent protection and its application to software. It begins by recapping trade secrecy law and its limitations for software. It then introduces patents as a stronger form of intellectual property protection that provides a limited-time monopoly on an invention. For software to be patentable, it cannot claim an abstract idea, algorithm, or scientific principle alone; it must demonstrate utility, novelty, and non-obviousness. While software patents were initially controversial, a 1981 court case established that a physical process using a computer program could be patented. The document ends by discussing theories of intellectual property and how software challenges traditional notions of ownership similar to Locke's labor theory.
Copyright Vs Patent and Trade Secrecy Law
This document discusses different mechanisms for intellectual property protection, including copyright, patent, and trade secrecy laws. Copyright protects the expression of ideas but not the ideas themselves. It applies to source and object codes but there are issues around modifications. Trade secrecy laws allow companies to keep information secret to maintain a competitive edge, such as by using non-disclosure agreements. Trade secrecy was more applicable during Bingo's software development but not once the software was released. Patent provides the strongest protection by giving inventors exclusive rights over novel and non-obvious inventions.
Property Right and Software
The document discusses three scenarios related to property rights and software: 1) Ramesh buying pirated software abroad, 2) a small software company called Bingo having their operating system copied, and 3) a man named Jake improving virus detection software and sharing his modifications. It also defines algorithms, source code, and object code. Property rights and copyright issues regarding software are complex with reasonable arguments on both sides.
Investigating Data Trials
This document discusses different types of data trails that are created when using computers and browsing the internet. It outlines three main types of data trails: 1) those created on your own machine through browser history, cookies, and other files; 2) cookies stored by websites to track user activity; and 3) data trails created on other machines when browsing from work vs home, noting it is easier for employers and internet service providers to track user activity in different ways depending on the connection. The document aims to investigate these data trails without making ethical judgments, simply exploring the purpose and availability of the information collected.
Gaussian Numerical Integration
This document discusses Gaussian numerical integration techniques. It describes the Gauss quadrature 2-point and 3-point formulas for numerical integration. The 2-point formula uses two sample points with equal weights of 1 to calculate the integral. The 3-point formula uses three sample points and weights of 5/9, 8/9 and 5/9 to yield more accurate integration over an interval. The document also explains how to apply these formulas when the integral limits differ from [-1,1].
Censorship and Controversy
This document discusses censorship and controversy surrounding it. It outlines strategies for censorship like blocking software and ratings systems. Ratings can be used by closed groups, communities, individuals, or imposed by organizations. There is a tension between freedom of information on the internet and pressure to control or restrict access to certain content, particularly for concerns around inappropriate influence on children or reduced productivity. Education is important to raise awareness of these issues from a global perspective.
Romberg's Integration
Romberg's method is used to estimate definite integrals by applying Richardson extrapolation repeatedly to the trapezoidal rule or rectangular rule. This generates a triangular array that increases in accuracy. The method is an extension of trapezoidal and rectangular rules. It works by recursively calculating the integral using smaller step sizes to generate values in the triangular array. Convergence is reached when two successive values are very close. An example calculates a definite integral using Romberg's method in three cases with decreasing step sizes to populate the triangular array.
More from VARUN KUMAR (20)
Recently uploaded
Rainfall intensity duration frequency curve statistical analysis and modeling...
Using data from 41 years in Patna’ India’ the study’s goal is to analyze the trends of how often it rains on a weekly, seasonal, and annual basis (1981−2020). First, utilizing the intensity-duration-frequency (IDF) curve and the relationship by statistically analyzing rainfall’ the historical rainfall data set for Patna’ India’ during a 41 year period (1981−2020), was evaluated for its quality. Changes in the hydrologic cycle as a result of increased greenhouse gas emissions are expected to induce variations in the intensity, length, and frequency of precipitation events. One strategy to lessen vulnerability is to quantify probable changes and adapt to them. Techniques such as log-normal, normal, and Gumbel are used (EV-I). Distributions were created with durations of 1, 2, 3, 6, and 24 h and return times of 2, 5, 10, 25, and 100 years. There were also mathematical correlations discovered between rainfall and recurrence interval.
Findings: Based on findings, the Gumbel approach produced the highest intensity values, whereas the other approaches produced values that were close to each other. The data indicates that 461.9 mm of rain fell during the monsoon season’s 301st week. However, it was found that the 29th week had the greatest average rainfall, 92.6 mm. With 952.6 mm on average, the monsoon season saw the highest rainfall. Calculations revealed that the yearly rainfall averaged 1171.1 mm. Using Weibull’s method, the study was subsequently expanded to examine rainfall distribution at different recurrence intervals of 2, 5, 10, and 25 years. Rainfall and recurrence interval mathematical correlations were also developed. Further regression analysis revealed that short wave irrigation, wind direction, wind speed, pressure, relative humidity, and temperature all had a substantial influence on rainfall.
Originality and value: The results of the rainfall IDF curves can provide useful information to policymakers in making appropriate decisions in managing and minimizing floods in the study area.
artificial intelligence and data science contents.pptx
What is artificial intelligence? Artificial intelligence is the ability of a computer or computer-controlled robot to perform tasks that are commonly associated with the intellectual processes characteristic of humans, such as the ability to reason.
› ...
Artificial intelligence (AI) | Definitio
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
Slides for the 4th Presentation on LLM Fine-Tuning with QLoRA Presented by Anant, featuring DataStax Astra
Applications of artificial Intelligence in Mechanical Engineering.pdf
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
AI offers the capability to process vast amounts of data, identify patterns, and make predictions with a level of speed and accuracy unattainable by traditional methods. This has profound implications for mechanical engineering, enabling more efficient design processes, predictive maintenance strategies, and optimized manufacturing operations. AI-driven tools can learn from historical data, adapt to new information, and continuously improve their performance, making them invaluable in tackling the multifaceted challenges of modern mechanical engineering.
Computational Engineering IITH Presentation
This Presentation will give you a brief idea about what Computational Engineering at IIT Hyderabad has to offer.
Design and optimization of ion propulsion drone
Electric propulsion technology is widely used in many kinds of vehicles in recent years, and aircrafts are no exception. Technically, UAVs are electrically propelled but tend to produce a significant amount of noise and vibrations. Ion propulsion technology for drones is a potential solution to this problem. Ion propulsion technology is proven to be feasible in the earth’s atmosphere. The study presented in this article shows the design of EHD thrusters and power supply for ion propulsion drones along with performance optimization of high-voltage power supply for endurance in earth’s atmosphere.
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
Sinan from the Delivery Hero mobile infrastructure engineering team shares a deep dive into performance acceleration with Gradle build cache optimizations. Sinan shares their journey into solving complex build-cache problems that affect Gradle builds. By understanding the challenges and solutions found in our journey, we aim to demonstrate the possibilities for faster builds. The case study reveals how overlapping outputs and cache misconfigurations led to significant increases in build times, especially as the project scaled up with numerous modules using Paparazzi tests. The journey from diagnosing to defeating cache issues offers invaluable lessons on maintaining cache integrity without sacrificing functionality.
一比一原版(CalArts毕业证)加利福尼亚艺术学院毕业证如何办理
CalArts毕业证学历书【微信95270640】CalArts毕业证’圣力嘉学院毕业证《Q微信95270640》办理CalArts毕业证√文凭学历制作{CalArts文凭}购买学历学位证书本科硕士,CalArts毕业证学历学位证【实体公司】办毕业证、成绩单、学历认证、学位证、文凭认证、办留信网认证、（网上可查，实体公司，专业可靠）
(诚招代理)办理国外高校毕业证成绩单文凭学位证,真实使馆公证（留学回国人员证明）真实留信网认证国外学历学位认证雅思代考国外学校代申请名校保录开请假条改GPA改成绩ID卡
1.高仿业务:【本科硕士】毕业证,成绩单（GPA修改）,学历认证（教育部认证）,大学Offer,,ID,留信认证,使馆认证,雅思,语言证书等高仿类证书；
2.认证服务: 学历认证（教育部认证）,大使馆认证（回国人员证明）,留信认证（可查有编号证书）,大学保录取,雅思保分成绩单。
3.技术服务：钢印水印烫金激光防伪凹凸版设计印刷激凸温感光标底纹镭射速度快。
办理加利福尼亚艺术学院加利福尼亚艺术学院毕业证文凭证书流程：
1客户提供办理信息：姓名生日专业学位毕业时间等（如信息不确定可以咨询顾问：我们有专业老师帮你查询）；
2开始安排制作毕业证成绩单电子图；
3毕业证成绩单电子版做好以后发送给您确认；
4毕业证成绩单电子版您确认信息无误之后安排制作成品；
5成品做好拍照或者视频给您确认；
6快递给客户（国内顺丰国外DHLUPS等快读邮寄）
-办理真实使馆公证（即留学回国人员证明）
-办理各国各大学文凭（世界名校一对一专业服务,可全程监控跟踪进度）
-全套服务：毕业证成绩单真实使馆公证真实教育部认证。让您回国发展信心十足！
（详情请加一下 文凭顾问+微信:95270640）欢迎咨询！子小伍玩小伍比山娃小一岁虎头虎脑的很霸气父亲让山娃跟小伍去夏令营听课山娃很高兴夏令营就设在附近一所小学山娃发现那所小学比自己的学校更大更美操场上还铺有塑胶跑道呢里面很多小朋友一班一班的快快乐乐原来城里娃都藏这儿来了怪不得平时见不到他们山娃恍然大悟起来吹拉弹唱琴棋书画山娃都不懂却什么都想学山娃怨自己太笨什么都不会斟酌再三山娃终于选定了学美术当听说每月要交元时父亲犹豫了山娃也说爸算了吧咱学校一学期才转
学校原版美国波士顿大学毕业证学历学位证书原版一模一样
原版一模一样【微信：741003700 】【美国波士顿大学毕业证学历学位证书】【微信：741003700 】学位证，留信认证（真实可查，永久存档）offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原海外各大学 Bachelor Diploma degree, Master Degree Diploma
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问Q/微741003700
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
Data Driven Maintenance | UReason Webinar
Discover the latest insights on Data Driven Maintenance with our comprehensive webinar presentation. Learn about traditional maintenance challenges, the right approach to utilizing data, and the benefits of adopting a Data Driven Maintenance strategy. Explore real-world examples, industry best practices, and innovative solutions like FMECA and the D3M model. This presentation, led by expert Jules Oudmans, is essential for asset owners looking to optimize their maintenance processes and leverage digital technologies for improved efficiency and performance. Download now to stay ahead in the evolving maintenance landscape.
官方认证美国密歇根州立大学毕业证学位证书原版一模一样
原版一模一样【微信：741003700 】【美国密歇根州立大学毕业证学位证书】【微信：741003700 】学位证，留信认证（真实可查，永久存档）offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原海外各大学 Bachelor Diploma degree, Master Degree Diploma
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问Q/微741003700
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
22CYT12-Unit-V-E Waste and its Management.ppt
Introduction- e - waste – definition - sources of e-waste– hazardous substances in e-waste - effects of e-waste on environment and human health- need for e-waste management– e-waste handling rules - waste minimization techniques for managing e-waste – recycling of e-waste - disposal treatment methods of e- waste – mechanism of extraction of precious metal from leaching solution-global Scenario of E-waste – E-waste in India- case studies.
原版制作(Humboldt毕业证书)柏林大学毕业证学位证一模一样
原件一模一样【微信：bwp0011】《(Humboldt毕业证书)柏林大学毕业证学位证》【微信：bwp0011】学位证，留信认证（真实可查，永久存档）原件一模一样纸张工艺/offer、雅思、外壳等材料/诚信可靠,可直接看成品样本，帮您解决无法毕业带来的各种难题！外壳，原版制作，诚信可靠，可直接看成品样本。行业标杆！精益求精，诚心合作，真诚制作！多年品质 ,按需精细制作，24小时接单,全套进口原装设备。十五年致力于帮助留学生解决难题，包您满意。
本公司拥有海外各大学样板无数，能完美还原。
1:1完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。材料咨询办理、认证咨询办理请加学历顾问微bwp0011
【主营项目】
一.毕业证【微bwp0011】成绩单、使馆认证、教育部认证、雅思托福成绩单、学生卡等！
二.真实使馆公证(即留学回国人员证明,不成功不收费)
三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
四.办理各国各大学文凭(一对一专业服务,可全程监控跟踪进度)
如果您处于以下几种情况：
◇在校期间，因各种原因未能顺利毕业……拿不到官方毕业证【微bwp0011】
◇面对父母的压力，希望尽快拿到；
◇不清楚认证流程以及材料该如何准备；
◇回国时间很长，忘记办理；
◇回国马上就要找工作，办给用人单位看；
◇企事业单位必须要求办理的
◇需要报考公务员、购买免税车、落转户口
◇申请留学生创业基金
留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
4:这个认证书并且可以归档倒地方
5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
6:个人职称评审加20分
7:个人信誉贷款加10分
8:在国家人才网主办的国家网络招聘大会中纳入资料，供国家高端企业选择人才
cnn.pptx Convolutional neural network used for image classication
Convolutional Neural Network used for image classification
Recently uploaded (20)
Rainfall intensity duration frequency curve statistical analysis and modeling...
Rainfall intensity duration frequency curve statistical analysis and modeling...
4. Mosca vol I -Fisica-Tipler-5ta-Edicion-Vol-1.pdf
4. Mosca vol I -Fisica-Tipler-5ta-Edicion-Vol-1.pdf
artificial intelligence and data science contents.pptx
artificial intelligence and data science contents.pptx
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
Applications of artificial Intelligence in Mechanical Engineering.pdf
Applications of artificial Intelligence in Mechanical Engineering.pdf
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
Optimizing Gradle Builds - Gradle DPE Tour Berlin 2024
Data Control Language.pptx Data Control Language.pptx
Data Control Language.pptx Data Control Language.pptx
cnn.pptx Convolutional neural network used for image classication
cnn.pptx Convolutional neural network used for image classication
Introduction to BJT
- 1. Introduction to BJT Dr. Varun Kumar Dr. Varun Kumar (IIIT Surat) 1 / 8
- 2. Outlines 1 Introduction to BJT 2 Active, reverse active, cutoff, and saturation region 3 Current Gain α, β, γ Dr. Varun Kumar (IIIT Surat) 2 / 8
- 3. Introduction to BJT Q Why BJT is called bi-polar? Ans Both electron and holes contribute to conduction. ⇒ This device include two p-n junction. ⇒ Transistor: Transfer resistor ⇒ Invented in 1947 by Shockley, Bardeen, and Brattain at Bell labs. ⇒ A BJT is connected two diode back to back. × Dr. Varun Kumar (IIIT Surat) 3 / 8
- 4. Continued– Realistic equivalent circuit for BJT: Dr. Varun Kumar (IIIT Surat) 4 / 8
- 5. Continued– Q- What is wrong with two p-n diode model with BJT ? In reality the BJT is as follows Dr. Varun Kumar (IIIT Surat) 5 / 8
- 6. Active, reverse active, cutoff, and saturation region 1 Active region: ⇒ Base-Emitter → Forward bias and Base-Collector → Reverse bias 2 Reverse active region: ⇒ Base-Emitter → Reverse bias and Base-Collector → Forward bias 3 Cutoff region: ⇒ Base-Emitter → Reverse bias and Base-Collector → Reverse bias 4 Saturation region: ⇒ Base-Emitter → Forward bias and Base-Collector → Forward bias Dr. Varun Kumar (IIIT Surat) 6 / 8
- 7. CE, CB and CC configuration Dr. Varun Kumar (IIIT Surat) 7 / 8
- 8. Current Gain α, β, γ ⇒ In common emitter (CE) configuration input current=IB , output current= IC , β = IC IB ⇒ In common base (CB) configuration input current=IE , output current= IC , α = IC IE ⇒ In common collector (CC) configuration input current=IB , output current= IE , γ = IE IB Relation among them: α = β β + 1 or β = α 1 − α or γ = β + 1, Here α ≈< 1 Ex- ⇒ α = 0.9 → β=9 → γ=10 ⇒ α = 0.99 → β=99 → γ=100 ⇒ α = 0.999 → β=999 → γ=1000 Dr. Varun Kumar (IIIT Surat) 8 / 8