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Device Modeling Report



COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: STPSC1206
MANUFACTURER: STMicroelectronics
REMARK: Professional Model




                Bee Technologies Inc.



  All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
PSpice model
                                      Model description
 parameter
     IS         Saturation Current
     N          Emission Coefficient
     RS         Series Resistance
    IKF         High-injection Knee Current
    CJO         Zero-bias Junction Capacitance
     M          Junction Grading Coefficient
     VJ         Junction Potential
    ISR         Recombination Current Saturation Value
     BV         Reverse Breakdown Voltage(a positive value)
    IBV         Reverse Breakdown Current(a positive value)
     TT         Transit Time
    EG          Energy-band Gap




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Forward Current Characteristic

Circuit Simulation Result

       24A

       22A

       20A

       18A

       16A

       14A

       12A

       10A

        8A

        6A

        4A

        2A

        0A
             0V              0.5V           1.0V            1.5V     2.0V          2.5V   3.0V
                  I(R1)
                                                            V_V1

Evaluation Circuit


                                                   R1


                                                   0.01m



                                       V1                            U1
                                0Vdc                                 STPSC1206_P




                                                        0




                          All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph

Circuit Simulation Result


                               24
                                               Measurement
                               22
                                               Simulation
                               20
      FORWARD CURRENT: IF(A)




                               18
                               16
                               14
                               12
                               10
                                8
                                6
                                4
                                2
                                0
                                    0            0.5         1          1.5         2          2.5          3
                                                        FORWARD VOLTAGE: VF(V)


Simulation Result

                                                                  VF(V)
                               IF(A)                                                            Error (%)
                                                 Measurement               Simulation
                                         0.5            0.9000                    0.9033                0.36
                                           1            0.9400                    0.9406                0.06
                                           2            0.9950                    0.9973                0.23
                                           4            1.1000                    1.0928               -0.65
                                           8            1.2700                    1.2659               -0.32
                                         12             1.4300                    1.4316                0.11
                                         16             1.5900                    1.5942                0.26
                                         20             1.7500                    1.7551                0.29
                                         24             1.9200                    1.9150               -0.26




                                        All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Junction Capacitance Characteristic

Circuit Simulation Result

       600p



       500p



       400p



       300p



       200p



       100p



          0
          1.0V                             10V                                 100V   400V
              I(V2)/(400V/500n)
                                                     V(N16610)


Evaluation Circuit


                                           V2


                                                 0Vdc



                        V2 = 400      V1                         U1
                        V1 = 0                                   STPSC1206_P
                        TD = 0
                        TR = 500ns
                        TF = 500ns
                        PW = 100us
                        PER = 500us


                                                 0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph

Circuit Simulation Result


                            600
                                                                                           Measurement
                                                                                           Simulation
                            500
       CAPACITANCE: C(pF)




                            400


                            300


                            200


                            100


                              0
                                  1                       10               100                          1000
                                                         REVERSE VOLTAGE:VR(V)


Simulation Result

                                                               C (pF)
                             VR(V)                                                            Error (%)
                                               Measurement               Simulation
                                        1            540.000                   545.845                1.08
                                        2            450.000                   449.696               -0.07
                                        5            328.000                   325.155               -0.87
                                       10            243.000                   246.083                1.27
                                       20            180.000                   183.292                1.83
                                       50            120.000                   122.474                2.06
                                      100             88.000                    89.934                2.20
                                      200             65.000                    65.938                1.44
                                      300             57.500                    54.913               -4.50




                                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Reverse Characteristic

Circuit Simulation Result

        10mA




       1.0mA




       100uA




        10uA




       1.0uA




       100nA
               0V      50V   100V    150V   200V       250V   300V    350V   400V   450V   500V   550V
                    I(R1)
                                                              V_V1

Evaluation Circuit


                                             R1


                                             0.01m



                                    V1                               U1
                             0Vdc                                    STPSC1206_P




                                                   0




                       All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
Comparison Graph

Circuit Simulation Result


                               1.E+04
                                                    Measurement

                                                    Simulation
                               1.E+03
     REVERSE CURRENT:IR(uA )




                               1.E+02



                               1.E+01



                               1.E+00



                               1.E-01
                                        0      50    100   150    200   250   300   350   400   450   500   550   600

                                                                 REVERSE VOLTAGE:VR(V)

Simulation Result

                                                                        IR(uA)
                                   VR(V)                                                              Error (%)
                                                      Measurement                Simulation
                                             50               0.510                       0.511               0.17
                                            100               1.050                       1.049              -0.11
                                            200               2.800                       2.800              -0.02
                                            300               6.300                       6.304               0.06
                                            400              14.500                     14.495               -0.03
                                            500              39.000                     38.978               -0.06
                                            600             145.000                    144.894               -0.07




                                            All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

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SPICE MODEL of STPSC1206 (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: STPSC1206 MANUFACTURER: STMicroelectronics REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 3. Forward Current Characteristic Circuit Simulation Result 24A 22A 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc STPSC1206_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 4. Comparison Graph Circuit Simulation Result 24 Measurement 22 Simulation 20 FORWARD CURRENT: IF(A) 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.5 0.9000 0.9033 0.36 1 0.9400 0.9406 0.06 2 0.9950 0.9973 0.23 4 1.1000 1.0928 -0.65 8 1.2700 1.2659 -0.32 12 1.4300 1.4316 0.11 16 1.5900 1.5942 0.26 20 1.7500 1.7551 0.29 24 1.9200 1.9150 -0.26 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 5. Junction Capacitance Characteristic Circuit Simulation Result 600p 500p 400p 300p 200p 100p 0 1.0V 10V 100V 400V I(V2)/(400V/500n) V(N16610) Evaluation Circuit V2 0Vdc V2 = 400 V1 U1 V1 = 0 STPSC1206_P TD = 0 TR = 500ns TF = 500ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 6. Comparison Graph Circuit Simulation Result 600 Measurement Simulation 500 CAPACITANCE: C(pF) 400 300 200 100 0 1 10 100 1000 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 1 540.000 545.845 1.08 2 450.000 449.696 -0.07 5 328.000 325.155 -0.87 10 243.000 246.083 1.27 20 180.000 183.292 1.83 50 120.000 122.474 2.06 100 88.000 89.934 2.20 200 65.000 65.938 1.44 300 57.500 54.913 -4.50 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 7. Reverse Characteristic Circuit Simulation Result 10mA 1.0mA 100uA 10uA 1.0uA 100nA 0V 50V 100V 150V 200V 250V 300V 350V 400V 450V 500V 550V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc STPSC1206_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
  • 8. Comparison Graph Circuit Simulation Result 1.E+04 Measurement Simulation 1.E+03 REVERSE CURRENT:IR(uA ) 1.E+02 1.E+01 1.E+00 1.E-01 0 50 100 150 200 250 300 350 400 450 500 550 600 REVERSE VOLTAGE:VR(V) Simulation Result IR(uA) VR(V) Error (%) Measurement Simulation 50 0.510 0.511 0.17 100 1.050 1.049 -0.11 200 2.800 2.800 -0.02 300 6.300 6.304 0.06 400 14.500 14.495 -0.03 500 39.000 38.978 -0.06 600 145.000 144.894 -0.07 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010