This document contains several HSPICE examples demonstrating circuit analysis techniques, including:
1) Voltage divider, subcircuit, and calling subcircuit simulations;
2) Switching circuits using transmission line gates;
3) Pulse and triangle wave generator circuits;
4) Dependent source examples using VCCS and CCVS;
5) Ideal transformer and rectifier with filter simulations;
6) Mutual inductor, ideal op-amp, and identifying op-amp parameters;
7) Characteristic curve plotting for diode and maximum power transfer analysis.
IC Design of Power Management Circuits (IV)Claudia Sin
by Wing-Hung Ki
Integrated Power Electronics Laboratory
ECE Dept., HKUST
Clear Water Bay, Hong Kong
www.ee.ust.hk/~eeki
International Symposium on Integrated Circuits
Singapore, Dec. 14, 2009
This document presents a new CMOS voltage divider based current mirror and compares it to basic and cascode current mirrors. The basic current mirror has limitations like finite output resistance and channel length modulation effects. The cascode current mirror improves output resistance but wastes threshold voltage. The new CMOS voltage divider current mirror uses an NMOS and PMOS transistor voltage divider to bias an NMOS transistor and control the output current. It consumes less power than the basic current mirror and is well-suited for low current biasing applications.
IC Design of Power Management Circuits (I)Claudia Sin
by Wing-Hung Ki
Integrated Power Electronics Laboratory
ECE Dept., HKUST
Clear Water Bay, Hong Kong
www.ee.ust.hk/~eeki
International Symposium on Integrated Circuits
Singapore, Dec. 14, 2009
This document discusses the design and analysis of a Single-Ended Primary-Inductor Converter (SEPIC) circuit. It provides an overview of SEPIC converters and how they allow the output voltage to be greater than, less than, or equal to the input voltage. The document then describes the methodology for analyzing a SEPIC circuit operating in continuous mode. It includes calculations for determining the output voltage, inductor and capacitor values, voltage ripple, current stresses, and MOSFET selection. Simulation results are presented and disadvantages of SEPIC converters are noted.
This presentation discusses the basics of Pass Transistor Logic, its advantages, limitation and finally implementation of Boolean functions/Combinational Logic circuits using Pass Transistor Logic.
This document discusses small-signal modeling of MOSFETs. It introduces small-signal modeling as a way to linearize circuits by considering only small amplitude signals. It then presents the low-frequency small-signal model of a MOSFET, including terms like transconductance and output conductance. Finally, it discusses the high-frequency model, noting the need to account for parasitic capacitances between terminals at high frequencies. Diagrams of the complete low-frequency and high-frequency small-signal MOSFET models are provided.
IC Design of Power Management Circuits (IV)Claudia Sin
by Wing-Hung Ki
Integrated Power Electronics Laboratory
ECE Dept., HKUST
Clear Water Bay, Hong Kong
www.ee.ust.hk/~eeki
International Symposium on Integrated Circuits
Singapore, Dec. 14, 2009
This document presents a new CMOS voltage divider based current mirror and compares it to basic and cascode current mirrors. The basic current mirror has limitations like finite output resistance and channel length modulation effects. The cascode current mirror improves output resistance but wastes threshold voltage. The new CMOS voltage divider current mirror uses an NMOS and PMOS transistor voltage divider to bias an NMOS transistor and control the output current. It consumes less power than the basic current mirror and is well-suited for low current biasing applications.
IC Design of Power Management Circuits (I)Claudia Sin
by Wing-Hung Ki
Integrated Power Electronics Laboratory
ECE Dept., HKUST
Clear Water Bay, Hong Kong
www.ee.ust.hk/~eeki
International Symposium on Integrated Circuits
Singapore, Dec. 14, 2009
This document discusses the design and analysis of a Single-Ended Primary-Inductor Converter (SEPIC) circuit. It provides an overview of SEPIC converters and how they allow the output voltage to be greater than, less than, or equal to the input voltage. The document then describes the methodology for analyzing a SEPIC circuit operating in continuous mode. It includes calculations for determining the output voltage, inductor and capacitor values, voltage ripple, current stresses, and MOSFET selection. Simulation results are presented and disadvantages of SEPIC converters are noted.
This presentation discusses the basics of Pass Transistor Logic, its advantages, limitation and finally implementation of Boolean functions/Combinational Logic circuits using Pass Transistor Logic.
This document discusses small-signal modeling of MOSFETs. It introduces small-signal modeling as a way to linearize circuits by considering only small amplitude signals. It then presents the low-frequency small-signal model of a MOSFET, including terms like transconductance and output conductance. Finally, it discusses the high-frequency model, noting the need to account for parasitic capacitances between terminals at high frequencies. Diagrams of the complete low-frequency and high-frequency small-signal MOSFET models are provided.
This document describes a buck converter subsystem and current sensing techniques. It contains the following key points:
1. The objective is to efficiently step down DC voltage while reducing ripple to produce a smooth output voltage, and to measure the inductor current.
2. The subsystem includes a circuit configuration, components, design equations, and current waveforms. Techniques for current sensing include simplified and advanced methods.
3. An advanced current sensing model uses a simplified inductor model with a parasitic resistance and capacitor to determine the inductor current based on the voltage across a sensing capacitor. Assumptions are provided for component values and tolerances.
The document discusses latches and flip-flops. It describes how latches are used to store data values and are building blocks for master-slave flip-flops. It then discusses different types of latches including D latches, pass transistor latches, and static D latches. Various flip-flop designs are presented including using a pair of back-to-back latches and adding features like enables, resets, and sets. Transmission gate and precharge techniques are explored for building flip-flops with lower power consumption.
A detailed step-by-step procedure for the design of a buck converter. Different active and passive components are selected as per the requirement specified in the design problem.
This document discusses important considerations for analog integrated circuit layout and the CMOS fabrication process. It covers topics like MOS transistor operation, analog signal characteristics, CMOS fabrication steps, layout techniques for minimizing noise and mismatches, and avoiding latch-up issues. The key goals of analog layout include matching devices, minimizing parasitic capacitance and resistance, isolating analog and digital sections, and using guard rings and decoupling capacitors.
The MOSFET is an important element in embedded system design which is used to control the loads as per the requirement. The MOSFET is a high voltage controlling device provides some key features for circuit designers in terms of their overall performance.
The document discusses CMOS inverters, NAND gates, and NOR gates. It describes the components and operation of each circuit. For CMOS inverters, it explains that one p-channel and one n-channel MOSFET are connected in series, with their gates connected as the input and drains as the output. A NAND gate uses two p-channel MOSFETs in parallel and two n-channel in series, while a NOR gate uses two p-channel in series and two n-channel in parallel. Truth tables are provided for each gate. Advantages of CMOS circuits include low power consumption and high noise immunity, while disadvantages are low switching speed and greater propagation delay.
This document provides an overview of CMOS technology. It discusses how CMOS circuits use complementary pairs of NMOS and PMOS transistors to implement logic gates like inverters. The CMOS inverter uses one transistor to pull the output low and the other to pull it high, allowing for low power operation. Larger CMOS logic gates consist of pull-down and pull-up networks of NMOS and PMOS transistors respectively. Transistor sizing is also covered, with sizing done to ensure equal driving capability between pull-up and pull-down networks.
The document discusses MOS transistors and their operation. It introduces MOS structure, showing the metal-oxide-semiconductor makeup. It describes how applying a positive voltage to the gate can create an inversion layer channel between the source and drain, allowing current to flow. The threshold voltage is defined as the minimum gate voltage needed to form an conducting channel. The document covers MOS transistor regions of operation like accumulation, depletion and inversion modes in detail. It also discusses key characteristics like current-voltage relationships.
This document discusses pass transistor logic, which uses MOS transistors to transfer charge between circuit nodes under gate control. It describes how nMOS and pMOS transistors can pass strong or weak signals depending on their configuration. Threshold voltage drops, charge sharing problems, and sneak paths that can occur in pass transistor logic circuits are also covered. The document provides examples of analyzing charge distribution before and after transistors turn on, and presents a general design for pass transistor logic gates that ensures both charging and discharging paths exist. Exercises are included on analyzing charge sharing and designing pass transistor logic circuits like majority gates and decoders.
This document discusses voltage divider biasing of BJT transistors. It explains the steps to analyze a voltage divider bias circuit: 1) replace capacitors with open circuits, 2) simplify the circuit using Thevenin's theorem, and 3) identify the base-emitter and collector-emitter loops. Equations for the bias point currents and voltages are derived from loop analyses. A simulation circuit is provided to experimentally determine the bias point parameters. The full experiment can be accessed online for hands-on practice of voltage divider bias analysis.
This document describes the design of a low dropout voltage regulator (LDO) circuit. It includes the goals of providing a 3.3V output voltage from a 5V input. The key components of an LDO - pass transistor, error amplifier, and voltage reference - are discussed. Calculations are shown for efficiency, transistor sizes, setting the bias voltage, and sizing additional transistors. A block diagram and final schematic are presented. Post-layout simulations demonstrate the line regulation as the input voltage is changed.
Short channel effects arise when the channel length of a MOSFET becomes comparable to the depletion layer width. This causes unwanted effects such as drain-induced barrier lowering (DIBL), where the drain voltage lowers the channel potential barrier; surface scattering, where carriers collide with the surface increasing; and velocity saturation, where the electric field saturates the carrier drift velocity. Other effects are impact ionization, where high-energy carriers generate electron-hole pairs, and hot carrier injection (HCI). Short channel effects degrade performance and reliability in smaller transistors.
Clippers and clampers are diode-based circuits used to modify signal waveforms. Clippers eliminate portions of an input signal to "clip" the waveform, and are used to remove noise or create new waveforms. They come in series and parallel types. Series clippers place the diode in series with the load, and clip voltages that don't forward bias the diode. Parallel clippers take the output across the diode, producing the voltage when it is not conducting. Clampers "clamp" a signal to a different DC level using a capacitor, diode, and resistor. The capacitor stores a reference voltage to set the output level when the diode is non-conducting.
- The JFET is a voltage-controlled device that uses an electric field to control the flow of current. It has three terminals: the drain, gate, and source.
- There are two types of JFETs: n-channel and p-channel. In an n-channel JFET, applying a negative voltage to the gate reduces the channel width and thereby the current between the drain and source. In a p-channel JFET the behavior is opposite.
- The JFET characteristics show the drain current (ID) as a function of drain-source voltage (VDS) for different gate-source voltages (VGS). ID increases with VDS until reaching pinch-off, then becomes constant.
This presentation discusses the basics about how to realize logic functions using Static CMOS logic. This presentation discusses about how to realize a Boolean expression by drawing a Pull-up network and a pull-down network. It also briefs about the pass transistor logic and the concepts of weak and strong outputs.
Common Emitter Configuration and Collector CurveZeeshan Rafiq
This document discusses common emitter configuration in transistors. It describes:
- The common emitter configuration has the emitter common to both input and output terminals. It provides high gain and is widely used in amplifier designs.
- The input characteristics are similar to a diode with the output characteristics relating collector current (IC) to collector voltage (VCE) for different base currents (IB).
- The active, cutoff, and saturation regions are described on the output characteristics graph.
The document provides an overview of analog layout design. It discusses that analog circuits require careful attention to geometry during layout due to process variations. The analog design flow includes electrical design, physical design involving layout, and fabrication/testing. Key considerations for analog layout include minimizing parasitic resistances and capacitances, reducing noise, and ensuring matching between identical components using techniques like common-centroid layout. Resistors and capacitors must be carefully laid out to minimize non-ideal effects and provide accurate values.
This document contains formulas and concepts related to physics, electricity, magnetism, and circuits. It defines fundamental constants like the Coulomb constant, elementary charge, and mass of an electron. It also provides equations for electric field and force, electric potential and capacitance, electric current and resistance, magnetic force and field, and inductance. Key concepts covered include electric dipoles, electric flux, capacitors in series and parallel, Ohm's law, Kirchhoff's laws, RC circuits, magnetic force, Biot-Savart law, and Ampere's law.
This document provides an overview of PSPICE and how to use it to simulate analog circuits. It describes the different types of input files for PSPICE, how to define circuit components and models, and the various analysis statements like .OP, .DC, .AC, and .TRAN to set up DC operating point, DC sweep, AC, and transient analyses respectively. It also covers topics like subcircuits, semiconductor device models, and scale factors for numbers in PSPICE.
This document describes a buck converter subsystem and current sensing techniques. It contains the following key points:
1. The objective is to efficiently step down DC voltage while reducing ripple to produce a smooth output voltage, and to measure the inductor current.
2. The subsystem includes a circuit configuration, components, design equations, and current waveforms. Techniques for current sensing include simplified and advanced methods.
3. An advanced current sensing model uses a simplified inductor model with a parasitic resistance and capacitor to determine the inductor current based on the voltage across a sensing capacitor. Assumptions are provided for component values and tolerances.
The document discusses latches and flip-flops. It describes how latches are used to store data values and are building blocks for master-slave flip-flops. It then discusses different types of latches including D latches, pass transistor latches, and static D latches. Various flip-flop designs are presented including using a pair of back-to-back latches and adding features like enables, resets, and sets. Transmission gate and precharge techniques are explored for building flip-flops with lower power consumption.
A detailed step-by-step procedure for the design of a buck converter. Different active and passive components are selected as per the requirement specified in the design problem.
This document discusses important considerations for analog integrated circuit layout and the CMOS fabrication process. It covers topics like MOS transistor operation, analog signal characteristics, CMOS fabrication steps, layout techniques for minimizing noise and mismatches, and avoiding latch-up issues. The key goals of analog layout include matching devices, minimizing parasitic capacitance and resistance, isolating analog and digital sections, and using guard rings and decoupling capacitors.
The MOSFET is an important element in embedded system design which is used to control the loads as per the requirement. The MOSFET is a high voltage controlling device provides some key features for circuit designers in terms of their overall performance.
The document discusses CMOS inverters, NAND gates, and NOR gates. It describes the components and operation of each circuit. For CMOS inverters, it explains that one p-channel and one n-channel MOSFET are connected in series, with their gates connected as the input and drains as the output. A NAND gate uses two p-channel MOSFETs in parallel and two n-channel in series, while a NOR gate uses two p-channel in series and two n-channel in parallel. Truth tables are provided for each gate. Advantages of CMOS circuits include low power consumption and high noise immunity, while disadvantages are low switching speed and greater propagation delay.
This document provides an overview of CMOS technology. It discusses how CMOS circuits use complementary pairs of NMOS and PMOS transistors to implement logic gates like inverters. The CMOS inverter uses one transistor to pull the output low and the other to pull it high, allowing for low power operation. Larger CMOS logic gates consist of pull-down and pull-up networks of NMOS and PMOS transistors respectively. Transistor sizing is also covered, with sizing done to ensure equal driving capability between pull-up and pull-down networks.
The document discusses MOS transistors and their operation. It introduces MOS structure, showing the metal-oxide-semiconductor makeup. It describes how applying a positive voltage to the gate can create an inversion layer channel between the source and drain, allowing current to flow. The threshold voltage is defined as the minimum gate voltage needed to form an conducting channel. The document covers MOS transistor regions of operation like accumulation, depletion and inversion modes in detail. It also discusses key characteristics like current-voltage relationships.
This document discusses pass transistor logic, which uses MOS transistors to transfer charge between circuit nodes under gate control. It describes how nMOS and pMOS transistors can pass strong or weak signals depending on their configuration. Threshold voltage drops, charge sharing problems, and sneak paths that can occur in pass transistor logic circuits are also covered. The document provides examples of analyzing charge distribution before and after transistors turn on, and presents a general design for pass transistor logic gates that ensures both charging and discharging paths exist. Exercises are included on analyzing charge sharing and designing pass transistor logic circuits like majority gates and decoders.
This document discusses voltage divider biasing of BJT transistors. It explains the steps to analyze a voltage divider bias circuit: 1) replace capacitors with open circuits, 2) simplify the circuit using Thevenin's theorem, and 3) identify the base-emitter and collector-emitter loops. Equations for the bias point currents and voltages are derived from loop analyses. A simulation circuit is provided to experimentally determine the bias point parameters. The full experiment can be accessed online for hands-on practice of voltage divider bias analysis.
This document describes the design of a low dropout voltage regulator (LDO) circuit. It includes the goals of providing a 3.3V output voltage from a 5V input. The key components of an LDO - pass transistor, error amplifier, and voltage reference - are discussed. Calculations are shown for efficiency, transistor sizes, setting the bias voltage, and sizing additional transistors. A block diagram and final schematic are presented. Post-layout simulations demonstrate the line regulation as the input voltage is changed.
Short channel effects arise when the channel length of a MOSFET becomes comparable to the depletion layer width. This causes unwanted effects such as drain-induced barrier lowering (DIBL), where the drain voltage lowers the channel potential barrier; surface scattering, where carriers collide with the surface increasing; and velocity saturation, where the electric field saturates the carrier drift velocity. Other effects are impact ionization, where high-energy carriers generate electron-hole pairs, and hot carrier injection (HCI). Short channel effects degrade performance and reliability in smaller transistors.
Clippers and clampers are diode-based circuits used to modify signal waveforms. Clippers eliminate portions of an input signal to "clip" the waveform, and are used to remove noise or create new waveforms. They come in series and parallel types. Series clippers place the diode in series with the load, and clip voltages that don't forward bias the diode. Parallel clippers take the output across the diode, producing the voltage when it is not conducting. Clampers "clamp" a signal to a different DC level using a capacitor, diode, and resistor. The capacitor stores a reference voltage to set the output level when the diode is non-conducting.
- The JFET is a voltage-controlled device that uses an electric field to control the flow of current. It has three terminals: the drain, gate, and source.
- There are two types of JFETs: n-channel and p-channel. In an n-channel JFET, applying a negative voltage to the gate reduces the channel width and thereby the current between the drain and source. In a p-channel JFET the behavior is opposite.
- The JFET characteristics show the drain current (ID) as a function of drain-source voltage (VDS) for different gate-source voltages (VGS). ID increases with VDS until reaching pinch-off, then becomes constant.
This presentation discusses the basics about how to realize logic functions using Static CMOS logic. This presentation discusses about how to realize a Boolean expression by drawing a Pull-up network and a pull-down network. It also briefs about the pass transistor logic and the concepts of weak and strong outputs.
Common Emitter Configuration and Collector CurveZeeshan Rafiq
This document discusses common emitter configuration in transistors. It describes:
- The common emitter configuration has the emitter common to both input and output terminals. It provides high gain and is widely used in amplifier designs.
- The input characteristics are similar to a diode with the output characteristics relating collector current (IC) to collector voltage (VCE) for different base currents (IB).
- The active, cutoff, and saturation regions are described on the output characteristics graph.
The document provides an overview of analog layout design. It discusses that analog circuits require careful attention to geometry during layout due to process variations. The analog design flow includes electrical design, physical design involving layout, and fabrication/testing. Key considerations for analog layout include minimizing parasitic resistances and capacitances, reducing noise, and ensuring matching between identical components using techniques like common-centroid layout. Resistors and capacitors must be carefully laid out to minimize non-ideal effects and provide accurate values.
This document contains formulas and concepts related to physics, electricity, magnetism, and circuits. It defines fundamental constants like the Coulomb constant, elementary charge, and mass of an electron. It also provides equations for electric field and force, electric potential and capacitance, electric current and resistance, magnetic force and field, and inductance. Key concepts covered include electric dipoles, electric flux, capacitors in series and parallel, Ohm's law, Kirchhoff's laws, RC circuits, magnetic force, Biot-Savart law, and Ampere's law.
This document provides an overview of PSPICE and how to use it to simulate analog circuits. It describes the different types of input files for PSPICE, how to define circuit components and models, and the various analysis statements like .OP, .DC, .AC, and .TRAN to set up DC operating point, DC sweep, AC, and transient analyses respectively. It also covers topics like subcircuits, semiconductor device models, and scale factors for numbers in PSPICE.
Spice is a software program used to simulate and analyze electrical and electronic circuits. It allows users to define circuit components and parameters in a netlist file and run various types of analyses, including DC, AC, and transient analyses. Key statements include titles, comments, data statements to define components, and control statements to specify the type of analysis and output.
Transient analysis of clamping circuitsANILPRASAD58
This document contains a detailed analysis of the transient response of a circuit containing a capacitor, diode, and resistors when subjected to a step input voltage VS. It analyzes the voltage and current values at different time intervals as the diode switches between forward and reverse biased states. Key points analyzed include the voltage across the capacitor VC, output voltage V0, and how they vary with time and the on/off state of the diode. Calculations are shown for V0 and VC at t=T/2, T, 3T/2, 2T, and 5T/2.
1) The document contains solved examples related to diode circuits and characteristics. It examines diode behavior in rectifier circuits, transfer characteristics, and modeling.
2) Key concepts covered include the voltage and current relationships of ideal and exponential diode models, as well as the small-signal resistance parameter rd.
3) Methods like iteration and exponential equations are used to solve for voltage and current in circuits containing single or multiple diodes.
An impedance network consisting of three impedances connected in series and parallel is connected to a 250V AC supply. The current, power factor, total power absorbed, and power dissipated in each resistance is calculated. A phasor diagram is drawn. Additionally, the power factor of two circuits in parallel with the same impedances but different power factors is calculated. Finally, a circuit with an inductive load is analyzed and the capacitance required to improve the power factor to various values is determined.
Solutions manual for microelectronic circuits analysis and design 3rd edition...Gallian394
Solutions Manual for Microelectronic Circuits Analysis and Design 3rd Edition by Rashid IBSN 9781305635166
Download at: https://goo.gl/ShMdzK
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The document describes a simulation of an NMOS transistor. It defines the mesh, regions, doping concentrations, materials, and electrical contacts. It then performs the simulation, solving the device at different biases and extracting output parameters and plots.
The document discusses a simulation of a quasi-resonant switching power supply using an FA5541 controller chip. The simulation results show:
1) The output voltage is regulated at 19V with a maximum current of 5A and an output ripple voltage of approximately 17.5mVP-P.
2) Waveforms of the output responding properly to a step change in load from 3A to 5A.
3) The start-up sequence, showing the controller turning on after the voltage on the VCC pin charges and the auxiliary winding takes over once VCC reaches its threshold.
This document provides information on the UC3844, UC3845, UC2844, and UC2845 high performance current mode controllers, including:
- Operating temperature ranges and packaging for the devices.
- Pin connections and ordering information for the different package types.
- Electrical characteristics like reference voltage, oscillator frequency, error amplifier performance, current sense input, output specifications, and undervoltage lockout thresholds.
- Graphs depicting properties like oscillator frequency vs timing resistor, output deadtime vs frequency, error amplifier gain and phase vs frequency, and more.
- An overview of key features like current mode operation, adjustable output deadtime, compensation, current limiting, undervoltage lockout,
This document provides a schematic diagram for an electronic circuit. Key components include a microcontroller, transistors, capacitors, inductors, and diodes. The schematic is labeled with component names and values, and includes equations to calculate certain component values based on defined parameters.
1. The document describes an electrical circuits lab experiment on verifying Kirchoff's current and voltage laws. It provides objectives, equipment used, theoretical background, sample calculations, circuit diagrams, and conclusions.
2. Key aspects covered include stating Kirchoff's laws, applying the laws to determine currents and voltages in series and parallel circuits with one source, and using mesh equations to solve circuits with two sources.
3. Through this experiment, students learn to apply Kirchoff's current and voltage laws to analyze circuit behavior, determine currents and voltages, and solve circuits with multiple sources. Sample calculations verify the theoretical predictions.
This document describes the components and operation of a transformer. A transformer consists of a core made of laminated iron separated by insulators, with coils of wire wound around the core. When an alternating current is passed through the primary coil, it produces a changing magnetic flux through the core. This changing flux induces an electromotive force (emf) in any other coils wound around the core, such as the secondary coil. Equations are provided relating the voltages, currents, number of turns, and flux in the primary and secondary coils. The document also discusses ideal transformers, no-load operation, and equivalent circuits used to model transformer losses and behavior under loaded conditions.
This document contains solutions to 15 exercises related to circuit analysis. The exercises calculate values like capacitance, resistance, cutoff frequency, and gain based on given circuit diagrams and specifications. Equations are set up and solved to find the desired values. For example, exercise 1 calculates the capacitance needed for a given RC circuit to have a cutoff frequency of 40 kHz. The solutions proceed methodically through each problem, showing the work to arrive at the final answers.
HA17741 General Purpose Operational AmplifierYong Heui Cho
This document provides information on the HA17741/PS general purpose operational amplifier. It includes:
1) A description of the HA17741/PS as an internal phase compensation, high performance op-amp for test and control applications.
2) Key features including high voltage gain, wide output amplitude, shorted output protection, and adjustable offset voltage.
3) Electrical characteristics, absolute maximum ratings, and typical applications like multivibrators, oscillators, and waveform generators.
4) Diagrams of internal structure and pin configuration as well as characteristic curves showing specifications over operating conditions.
This document provides information about current transformers (CTs) including their function, construction, standards, ratings, errors, and types. CTs are used to reduce high power system currents to lower values that can be measured by instrumentation. They provide insulation between the primary and secondary circuits and allow the use of standard current ratings for secondary equipment. The performance of protective relays depends on the CT that drives it. The document discusses various CT constructions, standards, magnetization characteristics, saturation effects, and ratings parameters like rated burden, continuous and short time rated currents. It also defines current and phase errors that can occur in CTs.
This document provides an overview of current transformers (CTs), including their function, construction, standards, ratings, and sources of errors. CTs are used to reduce high currents to lower, more easily measured values while providing insulation between the primary and secondary circuits. They allow the use of standard instrument ratings and help drive protective relays. The document discusses various CT types, designs, and materials as well as definitions for key ratings like rated burden, rated currents, and accuracy limit factor. Sources of errors like saturation, phase shift, and incorrect current magnitudes are also covered.
Cmos digital integrated circuits analysis and design 4th edition kang solutio...vem2001
CMOS Digital Integrated Circuits Analysis and Design 4th Edition Kang Solutions Manual
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Circuitos ELECTRICOS EJEMPLOS TAREA ELECTRICIDAD Y MAGNETISMObofo900393
The document contains several examples of calculating total resistance (RT), current (IT), power (PT), and energy (En) for circuits connected in series and parallel. The examples involve calculating these values for circuits with 2-5 resistors connected by applying the formulas for series and parallel circuits. The total values are calculated and broken down by the contribution of each individual resistor.
Electric vehicle and photovoltaic advanced roles in enhancing the financial p...IJECEIAES
Climate change's impact on the planet forced the United Nations and governments to promote green energies and electric transportation. The deployments of photovoltaic (PV) and electric vehicle (EV) systems gained stronger momentum due to their numerous advantages over fossil fuel types. The advantages go beyond sustainability to reach financial support and stability. The work in this paper introduces the hybrid system between PV and EV to support industrial and commercial plants. This paper covers the theoretical framework of the proposed hybrid system including the required equation to complete the cost analysis when PV and EV are present. In addition, the proposed design diagram which sets the priorities and requirements of the system is presented. The proposed approach allows setup to advance their power stability, especially during power outages. The presented information supports researchers and plant owners to complete the necessary analysis while promoting the deployment of clean energy. The result of a case study that represents a dairy milk farmer supports the theoretical works and highlights its advanced benefits to existing plants. The short return on investment of the proposed approach supports the paper's novelty approach for the sustainable electrical system. In addition, the proposed system allows for an isolated power setup without the need for a transmission line which enhances the safety of the electrical network
Use PyCharm for remote debugging of WSL on a Windo cf5c162d672e4e58b4dde5d797...shadow0702a
This document serves as a comprehensive step-by-step guide on how to effectively use PyCharm for remote debugging of the Windows Subsystem for Linux (WSL) on a local Windows machine. It meticulously outlines several critical steps in the process, starting with the crucial task of enabling permissions, followed by the installation and configuration of WSL.
The guide then proceeds to explain how to set up the SSH service within the WSL environment, an integral part of the process. Alongside this, it also provides detailed instructions on how to modify the inbound rules of the Windows firewall to facilitate the process, ensuring that there are no connectivity issues that could potentially hinder the debugging process.
The document further emphasizes on the importance of checking the connection between the Windows and WSL environments, providing instructions on how to ensure that the connection is optimal and ready for remote debugging.
It also offers an in-depth guide on how to configure the WSL interpreter and files within the PyCharm environment. This is essential for ensuring that the debugging process is set up correctly and that the program can be run effectively within the WSL terminal.
Additionally, the document provides guidance on how to set up breakpoints for debugging, a fundamental aspect of the debugging process which allows the developer to stop the execution of their code at certain points and inspect their program at those stages.
Finally, the document concludes by providing a link to a reference blog. This blog offers additional information and guidance on configuring the remote Python interpreter in PyCharm, providing the reader with a well-rounded understanding of the process.
Null Bangalore | Pentesters Approach to AWS IAMDivyanshu
#Abstract:
- Learn more about the real-world methods for auditing AWS IAM (Identity and Access Management) as a pentester. So let us proceed with a brief discussion of IAM as well as some typical misconfigurations and their potential exploits in order to reinforce the understanding of IAM security best practices.
- Gain actionable insights into AWS IAM policies and roles, using hands on approach.
#Prerequisites:
- Basic understanding of AWS services and architecture
- Familiarity with cloud security concepts
- Experience using the AWS Management Console or AWS CLI.
- For hands on lab create account on [killercoda.com](https://killercoda.com/cloudsecurity-scenario/)
# Scenario Covered:
- Basics of IAM in AWS
- Implementing IAM Policies with Least Privilege to Manage S3 Bucket
- Objective: Create an S3 bucket with least privilege IAM policy and validate access.
- Steps:
- Create S3 bucket.
- Attach least privilege policy to IAM user.
- Validate access.
- Exploiting IAM PassRole Misconfiguration
-Allows a user to pass a specific IAM role to an AWS service (ec2), typically used for service access delegation. Then exploit PassRole Misconfiguration granting unauthorized access to sensitive resources.
- Objective: Demonstrate how a PassRole misconfiguration can grant unauthorized access.
- Steps:
- Allow user to pass IAM role to EC2.
- Exploit misconfiguration for unauthorized access.
- Access sensitive resources.
- Exploiting IAM AssumeRole Misconfiguration with Overly Permissive Role
- An overly permissive IAM role configuration can lead to privilege escalation by creating a role with administrative privileges and allow a user to assume this role.
- Objective: Show how overly permissive IAM roles can lead to privilege escalation.
- Steps:
- Create role with administrative privileges.
- Allow user to assume the role.
- Perform administrative actions.
- Differentiation between PassRole vs AssumeRole
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artificial intelligence and data science contents.pptxGauravCar
What is artificial intelligence? Artificial intelligence is the ability of a computer or computer-controlled robot to perform tasks that are commonly associated with the intellectual processes characteristic of humans, such as the ability to reason.
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Artificial intelligence (AI) | Definitio
Software Engineering and Project Management - Introduction, Modeling Concepts...Prakhyath Rai
Introduction, Modeling Concepts and Class Modeling: What is Object orientation? What is OO development? OO Themes; Evidence for usefulness of OO development; OO modeling history. Modeling
as Design technique: Modeling, abstraction, The Three models. Class Modeling: Object and Class Concept, Link and associations concepts, Generalization and Inheritance, A sample class model, Navigation of class models, and UML diagrams
Building the Analysis Models: Requirement Analysis, Analysis Model Approaches, Data modeling Concepts, Object Oriented Analysis, Scenario-Based Modeling, Flow-Oriented Modeling, class Based Modeling, Creating a Behavioral Model.
Applications of artificial Intelligence in Mechanical Engineering.pdfAtif Razi
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
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2. Voltage Divider
** Voltage Divider **
R1 in out 1K
R2 out 0 1k
V1 in 0 DC 4V
.OP
.END
R1
1k
R2
1k
V1
4v
0
outin
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
3. Subcircuit
** Subcircuit Voltage Divider**
.SUBCKT BLK1 input output
R1 input 1 1k
R2 1 output 1K
.ENDS
X1 in out BLK1
X2 out 0 BLK1
V1 in 0 DC 4v
.OP
.END
V1
4v
BLK1
input output
BLK1
inputoutput
0
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
4. To Call a Subcircuit
** Call subcircuit **
.INCLUDE "z:Voltage Divider.sp"
X1 in out BLK
X2 out 0 BLK
VDC in 0 DC 4V
.OP
.END
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
13. Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
14. Linear mutual inductor
.Title Linear mutual inductor
R1 1 2 2
L1 2 0 8
L2 3 0 200
K1 L1 L2 1
R3 3 0 200
Vs 1 0 AC 50 0
.AC DEC 200 100 100k
.PROBE vtarget=par('V(2)')
.PROBE Phase=par('VP(2)')
.END
V1
50v
ACPHASE = 0
R1
2
L1
8
L2
200 R2
200
0
1 2 3
K
COUPLING=
K1
COUPLING = 1
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
15. Ideal Op-Amp
.TITLE Ideal Op-Amp
.INCLUDE "Z:7805.sp"
Vi in 0 DC 15v
x1 in 2 out LM7805
R1 3 0 1k
R2 1 0 1k
R3 out 1 2k
E1 2 3 OPAMP 1 2
.TRAN 0.1m 10m
.END
V1
15v
U1
OPAMP
+
-
OUT
R1
1k
R2
1k
R3
2k
U2
LM7805C
IN
1
OUT
2
GND
3
0
in out
1
2
0
0
3
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
16. Identifying Rin & Rout & Av in OPAMP
.TITLE op-amp
V1 2 0 DC 1
V2 1 0 DC 100m
R1 2 4 500
R2 1 3 5k
R3 3 0 10k
R4 4 3 100K **Rin=100k**
R5 4 6 1k
R6 5 6 1k ** Rout=1k**
R7 6 0 1k
E1 5 0 OPAMP 3 4 100K **Av=100K**
.DC V1 LIN 499 1m 500m
.PROBE Vout=par('v(6)')
.END
V1
1v
V2
100m
U1
OPAMP
+
-
OUT
0
0
R1
500
R2
5k
R3
10k
0
R5
1k
R7
1k
0
6
31
42
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
17. Plotting characteristic curve of Doid
(source sweeping)
** characteristic curve of Diod **
R1 in out 1k
D1 out 0 d1n4148
V1 in 0 DC 1v
.MODEL d1n4148 D Is=2.682n N=1.836 Rs=.5664 Xti=3 Eg=1.11 Cjo=4p
+ M=.3333 Vj=.5 Fc=.5 Bv=100 Ibv=100u Tt=11.54n
.DC V1 LIN 300 0 30 SWEEP TEMP LIN 2 25 50
.PROBE IDiode=par('I(D1)')
.END
D1
D1N4148
V1
1v
R1
1k
0
outin
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
18. Maximum Power Transfer
(elements sweeping)
** Maxium Power Transfer**
.PARAM r=1
R1 in out r
R2 out 0 10k
V1 in 0 DC 10v
.DC r LIN 400 8k 12k
.PLOT P(R1)
.END
V1
10v
R1
{r}
0
outin
PARAMETERS:
r = 1k
R2
10k
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
20. .SENS Command
Sensitivity of element’s variation
.TITLE Self Bias Sensivity ro Vcc
VCC VCC 0 DC 15v
RB1 VCC B 3.9k
RB2 B 0 1.5k
RC VCC C 470
RE E 0 180
Q1 C B E BC107A
.MODEL BC107A NPN Is=7.049f Xti=3 Eg=1.11 Vaf=116.3 Bf=375.5 Ise=7.049f
+ Ne=1.281 Ikf=4.589 Nk=.5 Xtb=1.5 Br=2.611 Isc=121.7p Nc=1.865
+ Ikr=5.313 Rc=1.464 Cjc=5.38p Mjc=.329 Vjc=.6218 Fc=.5 Cje=11.5p
+ Mje=.2717 Vje=.5 Tr=10n Tf=451p Itf=6.194 Xtf=17.43 Vtf=10
.OP
.SENS IC(Q1)
.END
VCC
15v
Q1
BC107A
RC
470
RB1
3.9k
RE
180
RB2
1.5k
0
00
dc sensitivities of output ic(q1)
element element element normalized
name value sensitivity sensitivity
(amps/unit) (amps/percent)
0:rb1 3.9000k -4.1551u -162.0503u
0:rb2 1.5000k 10.4832u 157.2486u
0:rc 470.0000 -101.2284n -475.7735n
0:re 180.0000 -99.2755u -178.6959u
0:vcc 15.0000 1.4890m 223.3519u
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
21. Sweeping the specifications of models
.TITLE DC sweep
.PARAM k=5.6
Vi in 0 1v
R1 in out 1k
D1 0 out d1n4734
.MODEL d1N4734 D Is=1.085f Rs=.7945 N=1 Xti=3 Eg=1.11 Cjo=157p
+ M=.2966 Vj=.75 Fc=.5 Bv=k Ibv=.37157 Nbv=.64726
.DC Vi LIN 300 -15 +15 SWEEP k LIN 6 1.6 6.6
.PROBE target=par('V(out)')
.END
D1
D1N4734
R1
1kV1
1v
0
outin
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
22. Output characteristic curve of BJT
.TITLE Curve
IDC 0 B DC 1m
VDC C 0 DC 5V
V1 E 0 DC 0
Q1 C B E BC107A
.MODEL BC107A NPN Is=7.049f Xti=3 Eg=1.11 Vaf=116.3 Bf=375.5 Ise=7.049f
+ Ne=1.281 Ikf=4.589 Nk=.5 Xtb=1.5 Br=2.611 Isc=121.7p Nc=1.865
+ Ikr=5.313 Rc=1.464 Cjc=5.38p Mjc=.329 Vjc=.6218 Fc=.5 Cje=11.5p
+ Mje=.2717 Vje=.5 Tr=10n Tf=451p Itf=6.194 Xtf=17.43 Vtf=10
.DC VDC LIN 200 0 20 SWEEP IDC LIN 5 0 40u
.PROBE I=par('IC(Q1)')
.END
IDC
1m
Q1
BC107A VDC
5v
00 0
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
23. ICQ-B Curve in BJT
.TITLE Beta
IDC 0 B DC 1m
VDC C 0 DC 5v
V1 E 0 DC 0
Q1 C B E BC107A
.MODEL BC107A NPN Is=7.049f Xti=3 Eg=1.11 Vaf=116.3 Bf=375.5 Ise=7.049f
+ Ne=1.281 Ikf=4.589 Nk=.5 Xtb=1.5 Br=2.611 Isc=121.7p Nc=1.865
+ Ikr=5.313 Rc=1.464 Cjc=5.38p Mjc=.329 Vjc=.6218 Fc=.5 Cje=11.5p
+ Mje=.2717 Vje=.5 Tr=10n Tf=451p Itf=6.194 Xtf=17.43 Vtf=10
.DC IDC LIN 10000 1u 10m SWEEP VDC LIN 3 5 15
.PROBE Beta=par('IC(Q1)/IB(Q1)')
.PROBE ICollector=par('(IC(Q1))')
.END
IDC
1m
Q1
BC107A VDC
5v
00 0
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
24. HFE & Transition Frequency of BJT
** HFE and transition frequency **
.PARAM k=1u
VDC C 0 DC 5v
IDC 0 B DC k AC 1 0
V1 E 0 DC 0
Q1 C B E BC107A
.MODEL BC107A NPN Is=7.049f Xti=3 Eg=1.11 Vaf=116.3 Bf=375.5 Ise=7.049f
+ Ne=1.281 Ikf=4.589 Nk=.5 Xtb=1.5 Br=2.611 Isc=121.7p Nc=1.865
+ Ikr=5.313 Rc=1.464 Cjc=5.38p Mjc=.329 Vjc=.6218 Fc=.5 Cje=11.5p
+ Mje=.2717 Vje=.5 Tr=10n Tf=451p Itf=6.194 Xtf=17.43 Vtf=10
.AC DEC 200 1 1G SWEEP K LIN 3 5u 15u
.probe beta=par('IC(Q1)/IB(Q1)')
.end
IDC
1u
Q1
BC107A VDC
5v
00 0
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
26. Power Amplifiers in B-Class and
Fourier Analysis
.TITLE Power amplifire in B-Class
VCC VCC 0 12v
Vee 0 Vee 12v
Q1 Vcc B out BD135
Q2 Vee B out BD136
RL out 0 100
R1 in B 50
Vin in 0 Sin 0 8V 10KHz 0 0 0
.MODEL BD135 NPN IS = 4.815E-14 NF = 0.9897 ISE = 1.389E-14 NE = 1.6 BF = 124.2
+ IKF = 1.6 VAF = 222 NR = 0.9895 ISC = 1.295E-13 NC = 1.183
+ BR = 13.26 IKR = 0.29 VAR = 81.4 RB = 0.5 IRB = 1E-06 RBM = 0.5
+ RE = 0.165 RC = 0.096 XTB = 0 EG = 1.11 XTI = 3 CJE = 1.243E-10
+ VJE = 0.7313 MJE = 0.3476 TF = 6.478E-10 XTF = 29 VTF = 2.648
+ ITF = 3.35 PTF = 0 CJC = 3.04E-11 VJC = 0.5642 MJC = 0.4371
+ XCJC = 0.15 TR = 1E-32 CJS = 0 VJS = 0.75 MJS = 0.333 FC = 0.9359
.MODEL BD136 PNP IS = 7.401E-14 NF = 0.9938 ISE = 4.104E-16 NE = 1.054 BF = 336.5
+ IKF = 0.1689 VAF = 22.47 NR = 0.9913 ISC = 1.290E-14 NC = 1.100
+ BR = 13.91 IKR = 9.888E-2 VAR = 30.00 RB = 0.500 IRB = 1E-06
+ RBM = 0.500 RE = 0.208 RC = 5.526E-02 XTB = 0 EG = 1.11 XTI = 3
+ CJE = 1.066E-10 VJE = 0.6900 MJE = 0.3676 TF = 2.578E-10 XTF = 13.56
+ VTF = 2.366 ITF = 1.3040 PTF = 0 CJC = 5.234E-11 VJC = 0.6431
+ MJC = 0.4436 XCJC = 0.440 TR = 1E-25 CJS = 0 VJS = 0.75 MJS = 0.333
+ FC = 0.990
.TRAN 0.1u 1m START=0.8m
.PROBE output=par('v(out)')
.FOUR 10k v(out)
.END
Q1
BD135
Q2
BD136
Vcc
12
Vee
12RL
100
R1
50
B
Vcc
Vee 0
out
Vee
Vcc
0
V3
FREQ = 10k
VAMPL = 8v
VOFF = 0
0
in
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
27. Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
28. .MEASURE Command
(Calculation of output DC Level)
.TLTEL CE
VCC VCC 0 DC 12v
RB1 VCC B 100K
RB2 B 0 27k
RC VCC C 4.7k
RE1 E 1 47
RE2 1 0 3.9k
RS in 2 50
CB 1 0 470u
CC 2 B 10u
Q1 C B E BC107A
.MODEL BC107A NPN Is=7.049f Xti=3 Eg=1.11 Vaf=116.3 Bf=375.5 Ise=7.049f
+ Ne=1.281 Ikf=4.589 Nk=.5 Xtb=1.5 Br=2.611 Isc=121.7p Nc=1.865
+ Ikr=5.313 Rc=1.464 Cjc=5.38p Mjc=.329 Vjc=.6218 Fc=.5 Cje=11.5p
+ Mje=.2717 Vje=.5 Tr=10n Tf=451p Itf=6.194 Xtf=17.43 Vtf=10
Vin in 0 0 AC 1 Sin 0 5mV 10kHz
.op
.AC DEC 200 1 100MEG
.TRAN 0.1us 1ms
.PROBE AC Gain=par('VDB(c)')
.PROBE AC Phase=par('-ABS(VP(c))')
.MEASURE TRAN val avg v(c) from=0 to=0.1ms
.PROBE TRAN output=par('V(c)-val')
.PROBE AC Rin=par('V(in)/I(Rs)')
.END
VCC
12vRC
4.7k
RB1
4.7k
RB2
27k
RE1
47
Q1
BC107A
RE2
3.9k
RS
50
C1
10u
V2
FREQ = 10k
VAMPL = 5m
VOFF = 0
AC = 1
00
B
C2
470u
0
1
0in 2
Vcc
0
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
29. Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
30. Example of .MEASURE Command
WHEN-FIND
TITLE measure
Vin in 0 PWL 0 0 1ns 1v 10ms 1 10.0000001m 0
R1 in out 1k
C1 out 0 1u
.TRAN 20u 20ms
.MEASURE TRAN val1 FIND I(R1) AT=1m
.MEASURE TRAN Val2 WHEN V(out)='0.5' CROSS=2
.PROBE input=par('V(in)')
.PROBE output=par('V(out)')
.END
R1
1k
C1
1u
0
V1
outin
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
31. Square wave, MEASURMET of RISE TIME
(MIN,MAX,PP &TRIG… TARG… )
.TITLE Rise Time
Vi in 0 PULSE 1 -1 0 1p 1p 1m 2m
R1 in out 1k
C1 out 0 100n
.TRAN 0.1u 10m
.MEASURE MAX MAX V(out) FROM=6.1m TO=8m
.MEASURE MIN MIN V(out) FROM=6.1m To=8m
.MEASURE PP PP V(out) FROM=6.1m TO=8m
.MEASURE TRAN T1 TRIG V(in) val=1 TD=6.1ms RISE=1 TARG V(out) val=0.1*PP+MIN TD=6.1ms RISE=1
.MEASURE TRAN T2 TRIG V(in) val=1 TD=6.1ms RISE=1 TARG V(out) val=0.9*PP+MIN TD=6.1ms RISE=1
.MEASURE TRAN Tr=param'T2-T1'
.PROBE in=par('v(in)')
.PROBE OUT=par('V(out)')
.END
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
32. .PZ Command
Pole & Zero
.TITLE Pole and zero
V1 in 0 DC 0 AC 1
R1 in out 1k
C1 out 0 100n
.AC DEC 200 1 100k
.PROBE gain=par('VDB(out)')
.PROBE pahse=par('VP(out)')
.PZ v(out) v1
.END
V2
1Vac
0Vdc
out
0
R1
1k
C1
100n
in
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016
34. LAPLACE Transform Simulation
TITLE LAPLACE
ERC 2 0 LAPLACE 1 0 1/1,1E-3
Vin 1 0 DC 0 AC 1 sin 0 1 159
.AC DEC 200 0.1 100MEG
.TRAN 0.6u 60m
.PROBE TRAN out=par('V(2)')
.PROBE AC ampel=par('VDB(2)')
.PROBE AC phase=par('VP(2)')
.MEASURE AC MAX FIND VDB(2) AT=1
.MEASURE AC cutoff WHEN vDB(2)='MAX-3'
.END
V2
R1
1k
0
C1
1u
Dariush Naseh - Shahid Beheshti University
of Tehran
10/2/2016