This document summarizes power semiconductor switches, including diodes, thyristors, bipolar junction transistors (BJTs), metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), gate turn-off thyristors (GTOs), and other developing switching devices. It describes the characteristics, features, and operating principles of these different types of switches through diagrams, images, and brief explanations.
This article discusses different power electronics devices that are in use like power diodes, power thyristors, power transistors, IGBT, GTO, IGCT and others. This article will give a basic view of these devices and their operations.
This article discusses different power electronics devices that are in use like power diodes, power thyristors, power transistors, IGBT, GTO, IGCT and others. This article will give a basic view of these devices and their operations.
As we have discussed that out of various triggering methods to turn the SCR, gate triggering is the most efficient and reliable method. Most of the control applications use this type of triggering because the desired instant of SCR turning is possible with gate triggering method.
Silicon Control Rectifier Phase ControlDerrick Tiew
These slides provide brief introduction to the use of silicon control rectifier in phase control circuit, i.e. half-wave as well as full-wave rectifier circuit.
Switching characteristics of power electronic devicesSunny Purani
the characteristics of power electronic devices in one touch.
only image files are there & the detailed explanations of these are given in different slide shares.
TEKNIK ELEKTRONIKA DAYA INVENTER HHHHHHHHHHHLLLLLLLLLLLLLLLLLLLLLLLLMLKIHHGMJNNNNNNNNNNNNNNNNNNNNNNNJKKKKKKKKKKKKKKKKKKKKKKKKKNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMM
As we have discussed that out of various triggering methods to turn the SCR, gate triggering is the most efficient and reliable method. Most of the control applications use this type of triggering because the desired instant of SCR turning is possible with gate triggering method.
Silicon Control Rectifier Phase ControlDerrick Tiew
These slides provide brief introduction to the use of silicon control rectifier in phase control circuit, i.e. half-wave as well as full-wave rectifier circuit.
Switching characteristics of power electronic devicesSunny Purani
the characteristics of power electronic devices in one touch.
only image files are there & the detailed explanations of these are given in different slide shares.
TEKNIK ELEKTRONIKA DAYA INVENTER HHHHHHHHHHHLLLLLLLLLLLLLLLLLLLLLLLLMLKIHHGMJNNNNNNNNNNNNNNNNNNNNNNNJKKKKKKKKKKKKKKKKKKKKKKKKKNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNNMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMMM
Part of Lecture series on EE321N, Power Electronics-I delivered by me during Fifth Semester of B.Tech. Electrical Engg., 2012
Z H College of Engg. & Technology, Aligarh Muslim University, Aligarh
Please comment and feel free to ask anything related. Thanks!
single phase half bridge inverter, full bridge inverter, parallel inverter, load commutated inverter with working and waveforms.
download and watch the animations. it will be effective.
single phase bridge inverter harmonic analysis.
Macroeconomics- Movie Location
This will be used as part of your Personal Professional Portfolio once graded.
Objective:
Prepare a presentation or a paper using research, basic comparative analysis, data organization and application of economic information. You will make an informed assessment of an economic climate outside of the United States to accomplish an entertainment industry objective.
Delivering Micro-Credentials in Technical and Vocational Education and TrainingAG2 Design
Explore how micro-credentials are transforming Technical and Vocational Education and Training (TVET) with this comprehensive slide deck. Discover what micro-credentials are, their importance in TVET, the advantages they offer, and the insights from industry experts. Additionally, learn about the top software applications available for creating and managing micro-credentials. This presentation also includes valuable resources and a discussion on the future of these specialised certifications.
For more detailed information on delivering micro-credentials in TVET, visit this https://tvettrainer.com/delivering-micro-credentials-in-tvet/
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http://sandymillin.wordpress.com/iateflwebinar2024
Published classroom materials form the basis of syllabuses, drive teacher professional development, and have a potentially huge influence on learners, teachers and education systems. All teachers also create their own materials, whether a few sentences on a blackboard, a highly-structured fully-realised online course, or anything in between. Despite this, the knowledge and skills needed to create effective language learning materials are rarely part of teacher training, and are mostly learnt by trial and error.
Knowledge and skills frameworks, generally called competency frameworks, for ELT teachers, trainers and managers have existed for a few years now. However, until I created one for my MA dissertation, there wasn’t one drawing together what we need to know and do to be able to effectively produce language learning materials.
This webinar will introduce you to my framework, highlighting the key competencies I identified from my research. It will also show how anybody involved in language teaching (any language, not just English!), teacher training, managing schools or developing language learning materials can benefit from using the framework.
June 3, 2024 Anti-Semitism Letter Sent to MIT President Kornbluth and MIT Cor...Levi Shapiro
Letter from the Congress of the United States regarding Anti-Semitism sent June 3rd to MIT President Sally Kornbluth, MIT Corp Chair, Mark Gorenberg
Dear Dr. Kornbluth and Mr. Gorenberg,
The US House of Representatives is deeply concerned by ongoing and pervasive acts of antisemitic
harassment and intimidation at the Massachusetts Institute of Technology (MIT). Failing to act decisively to ensure a safe learning environment for all students would be a grave dereliction of your responsibilities as President of MIT and Chair of the MIT Corporation.
This Congress will not stand idly by and allow an environment hostile to Jewish students to persist. The House believes that your institution is in violation of Title VI of the Civil Rights Act, and the inability or
unwillingness to rectify this violation through action requires accountability.
Postsecondary education is a unique opportunity for students to learn and have their ideas and beliefs challenged. However, universities receiving hundreds of millions of federal funds annually have denied
students that opportunity and have been hijacked to become venues for the promotion of terrorism, antisemitic harassment and intimidation, unlawful encampments, and in some cases, assaults and riots.
The House of Representatives will not countenance the use of federal funds to indoctrinate students into hateful, antisemitic, anti-American supporters of terrorism. Investigations into campus antisemitism by the Committee on Education and the Workforce and the Committee on Ways and Means have been expanded into a Congress-wide probe across all relevant jurisdictions to address this national crisis. The undersigned Committees will conduct oversight into the use of federal funds at MIT and its learning environment under authorities granted to each Committee.
• The Committee on Education and the Workforce has been investigating your institution since December 7, 2023. The Committee has broad jurisdiction over postsecondary education, including its compliance with Title VI of the Civil Rights Act, campus safety concerns over disruptions to the learning environment, and the awarding of federal student aid under the Higher Education Act.
• The Committee on Oversight and Accountability is investigating the sources of funding and other support flowing to groups espousing pro-Hamas propaganda and engaged in antisemitic harassment and intimidation of students. The Committee on Oversight and Accountability is the principal oversight committee of the US House of Representatives and has broad authority to investigate “any matter” at “any time” under House Rule X.
• The Committee on Ways and Means has been investigating several universities since November 15, 2023, when the Committee held a hearing entitled From Ivory Towers to Dark Corners: Investigating the Nexus Between Antisemitism, Tax-Exempt Universities, and Terror Financing. The Committee followed the hearing with letters to those institutions on January 10, 202
A review of the growth of the Israel Genealogy Research Association Database Collection for the last 12 months. Our collection is now passed the 3 million mark and still growing. See which archives have contributed the most. See the different types of records we have, and which years have had records added. You can also see what we have for the future.
This presentation includes basic of PCOS their pathology and treatment and also Ayurveda correlation of PCOS and Ayurvedic line of treatment mentioned in classics.
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Acetabularia acetabulum is a single-celled green alga that in its vegetative state is morphologically differentiated into a basal rhizoid and an axially elongated stalk, which bears whorls of branching hairs. The single diploid nucleus resides in the rhizoid.
A Strategic Approach: GenAI in EducationPeter Windle
Artificial Intelligence (AI) technologies such as Generative AI, Image Generators and Large Language Models have had a dramatic impact on teaching, learning and assessment over the past 18 months. The most immediate threat AI posed was to Academic Integrity with Higher Education Institutes (HEIs) focusing their efforts on combating the use of GenAI in assessment. Guidelines were developed for staff and students, policies put in place too. Innovative educators have forged paths in the use of Generative AI for teaching, learning and assessments leading to pockets of transformation springing up across HEIs, often with little or no top-down guidance, support or direction.
This Gasta posits a strategic approach to integrating AI into HEIs to prepare staff, students and the curriculum for an evolving world and workplace. We will highlight the advantages of working with these technologies beyond the realm of teaching, learning and assessment by considering prompt engineering skills, industry impact, curriculum changes, and the need for staff upskilling. In contrast, not engaging strategically with Generative AI poses risks, including falling behind peers, missed opportunities and failing to ensure our graduates remain employable. The rapid evolution of AI technologies necessitates a proactive and strategic approach if we are to remain relevant.
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This slide is special for master students (MIBS & MIFB) in UUM. Also useful for readers who are interested in the topic of contemporary Islamic banking.
Executive Directors Chat Leveraging AI for Diversity, Equity, and InclusionTechSoup
Let’s explore the intersection of technology and equity in the final session of our DEI series. Discover how AI tools, like ChatGPT, can be used to support and enhance your nonprofit's DEI initiatives. Participants will gain insights into practical AI applications and get tips for leveraging technology to advance their DEI goals.
Normal Labour/ Stages of Labour/ Mechanism of LabourWasim Ak
Normal labor is also termed spontaneous labor, defined as the natural physiological process through which the fetus, placenta, and membranes are expelled from the uterus through the birth canal at term (37 to 42 weeks
2. Power Semiconductor Switches
• Diodes (Uncontrolled switches)
• Thyristors (Controllable at turn-on but
uncontrolled at turn-off or commonly called
as latched devices). Triac is under the same
category.
• BJT, MOSFET, IGBT, GTO, MCT etc. are
fully controllable switches.
5. Power diodes
Diodes are classified as:
- general purpose or line-frequency diodes
- Fast recovery diodes
- Schottky diodes
6. Schottky Diode
• The schottky diode has a smaller voltage
drop compared to conventional diodes
(about 0.3 V).
• The schottky diode has a smaller voltage
breakdown than conventional diodes (less
than 200 V).
9. Thyristor Model
I A = I E1
I B1
Q1
I C1 = −α1I E1 + I C 01
I C 2 = −α 2 I E 2 + I C 02
IC 2 I C1
IG α 2 I G + I C 01 + I C 02
IA =
Q2 1 − (α1 + α 2 )
I B2
IE2
10. Thyristor Classification
• Phase control thyristors
• Inverter-grade or fast-type thyristors
• Light activated thyristors
• Reverse conducting thyristors
11. Thyristor Features
• Latching devices
• Double carrier devices
• Having forward and reverse blocking
capabilities
• Very high gain (IA/Ig)
• Low on-state voltage
• Can be protected by fuse
14. Snubbers for Diodes and Thyristors
• Maximum dv/dt across diodes or thyristors
must be limited and can be done by using an
RC snubber that is connected in parallel to
the devices.
• Maximum di/dt through diodes or thyristors
must be limited and can be done by using an
inductor that is connected in series to the
devices.
15. Switching Characteristics
Gate
signal
vT
iT
Io Transistor
voltage & Ed Io
Ed iT current
tdon tdoff
vT t fv t fi
t ri t son = tri + t fv trv t
soff = t rv + t fi
1 1
Transistor Wson = Ed I ot son Wsoff = Ed I ot soff
2 2
power
Pcd
16. Desired Switch Characteristics
• Small leakage current in the off state
• Small on-state voltage
• Short turn-on and turn-off times
• Large forward and reverse blocking voltage capabilities
• High on-state current rating
• Positive temperature coefficient of on-state resistance
• Small control power
• Wide Safe Operating Area
• Large dv/dt and di/dt ratings
18. Losses
Switching losses :
(
Ps = 1 E d I o f s t son + t soff
2
)
fs is switching frequency.
Conduction losses :
TON
Pcd = Von I o
Ts
Ts is switching period.
19. Bipolar Junction Transistor
iC iB 5 iC
iB 4
C iB 3
C iC iB 2
iB iB1 = 0
N
B vCE vCE
B P
N
E iB 5 > iB 4 > iB 3 > iB 2 > iB1
E
20. VI characteristics of BJT
Hard - saturation
Quasi - saturation
Second breakdown
IC I B5
Primary
I B4
breakdown
I B3
I B2
I B1 IB < 0
vCE
BVSUS BVCB 0
I B0 = 0
21. Operating region
• Hard-saturation provides low voltage-drop but a
large storage time (turn-off time)
• Quasi-saturation provides high voltage-drop but a
small storage time.
• Second breakdown must be avoided by using a
snubber and proper base current control.
• Negative base current results in higher voltage
breakdown.
23. BJT Features
• Current controlled devices
• Double carrier devices
• No reverse blocking capability
• Low gain (Ic/Ib)
• Low on-state voltage
• Can not be protected by fuse
• Second breakdown problem
25. MOSFET
iD vGS 5 iD
vGS 4
D vGS 3
iD vGS 2
vGS1 = 0
G vDS v DS
S
vGS 5 > vGS 4 > vGS 3 > vGS 2 > vGS1
26. MOSFET Features
• Voltage controlled devices
• Single carrier devices
• High on-state voltage
• Very high gain
• No reverse blocking capability
• No second breakdown problem
• Can not be protected by fuse
30. GTO Features
• Controllable at turn-on and turn-off
• High-voltage capability
• Can be designed with reverse blocking
capabilty
• Low gain at turn-off
• Low on-state voltage
• High turn-off losses
31. Insulated Gate Bipolar Transistors (IGBTs)
iC vGE 5
C vGE 4
iC vGE 3
vGE 2
vGE1 = 0
G vCE
E
vGE5 > vGE 4 > vGE3 > vGE 2 > vGE1
32. IGBT Features
• Combining the advantages of BJT and
MOSFET
• No reverse blocking capability
• No second breakdown
• High gain at turn on and turn off
33. Other Switching Devices
• Static Induction Transistor and Static Induction
Thyristor. The main problems are normally-on and
high conduction loss. The advantage is that the
speed is very high.
• MOS Controlled Thyristor. Combining the
advantages of MOSFET and Thyristor. Still under
development.
• IGCT (Integrated Gate Controlled Thyristor). This
is further development of GTOs.
34. Switching Device Development
ER
2000
POW
105 GTO : GATE TURN-OFF THYRISTOR
E
IV
DR MCT : MOS CONTROLLED THYRISTOR
THYRISTOR
H
Y SI Thy : STATIC INDUCTION THYRISTOR
NC
HIG
E
SY
BPT : BIPOLAR POWER TRANSISTOR
QU 104
EA
GTO
E
P (kVA)
IGBT : INSULATED GATE BIPOLAR TRANSISTOR
FR
G H
HI 1990
MCT SI Thy
CONTROLLABLE POWER
103
104
THYRISTOR IGBT
102
103 GTO
1980
BPT
P (kVA)
101
102
IGBT
MOS
104
THYRISTOR BPT
101 10-1 -1
103 10 100 101 102 104 105 106
P (kVA)
OPERATION FREQUENCY f (kHz)
GTO MOS
102
-1
10
10-1 100 101 102 104 105
101 BPT f (kHz)
10-1 -1
10 100 101 102 104
f (kHz)
38. Properties and Rating of
Semiconductor Power Switches
Switch Control Control Switching Voltage Maximum Maximum
signal characteristic frequency drop voltage current
rating rating
Diode medium 6.5 kV 5 kA
SCR current trigger low medium 6 kV 4 kA
TRIAC current trigger medium 1 kV 50 A
GTO current trigger low medium 6.5 kV 4.5 kA
BJT current linear medium low 1.5 kV 1 kA
MOSFET voltage linear Very high high 1 kV 200 A
IGBT voltage linear high medium 3.5 kV 2 kA
39. Properties of New Materials
Property Si GaAs 3C-SiC 6H-SiC Diamond
Bandgap at 300 K 1.12 1.43 2.2 2.9 5.5
(eV)
Relative dielectric 11.8 12.8 9.7 10 5.5
constant
Saturated drift
velocity (cm/s) 1x107 2x107 2.5x107 2.5x107 2.7x107
Thermal 1.5 0.5 5.0 5.0 20
conductivity
(W/cm/o C
Maximum 400 460 873 1240 1100
operating
temperature (K)
Melting 1415 1238 Sublime>1800 Sublime>1800 Phase change
temperature (C)
Electron mobility 1400 8500 1000 600 2200
at 300 K (cm2 /Vs)
Breakdown
electric field 3x105 4x105 4x106 4x106 1x107
(V/cm)
40. Applications
• Thyristor is only used for very large power
applications.
• Forced commutated thyristors are no longer used.
• Bipolar junction transistors are no longer used.
• MOSFET is commonly used in low-power
applications.
• IGBT is used from low-power up to medium
power applications.
• GTO is used for large power applications.
41. Loss Considerations
• Conduction losses
• Switching losses
• The loss will determine the junction
temperature and the heatsink and cooler
required.
• In many cases, the switching frequency is
limited by the temperature instead of device
speed.
42. Snubbers
• Turn-off losses can be reduced by using a turn-off
snubber. This snubber is also useful to limit high
dv/dt across the device.
• Turn-on losses can be reduced by using a turn-on
snubber. This snubber is also useful to limit high
di/dt through the device.
• Snubbers are useful to reduce the switching losses
on the switching devices. The total switching
losses, however, may still the same or even
increase.
44. Reducing Switching Losses
• Switching losses can be reduced by using lossless
snubbers. These snubbers, however, may make the
converter circuit became complicated.
• IGBTs may operate without snubbers.
• GTOs and IGCTs usually need a turn-off snubber
because of high tail current.
• Switching losses can be reduced or even
eliminated by using soft-switching techniques.
These methods, however, may increase the
required voltage and/or current ratings.