Performance Analysis of Encoder in Different Logic Techniques for High-Speed ...Achintya Kumar
In designing a system, we can replace cell components by appropriate technique based cell so that the noise margin of overall circuit is improved. In future we can also implement some techniques for sequential circuits.
Latch-up occurs in CMOS chips due to the interaction of parasitic bipolar transistors that form a silicon-controlled rectifier between the power and ground rails. This can cause excessive currents and potentially damage devices. Latch-up can be triggered by disturbances that increase the collector current of one of the parasitic transistors, activating positive feedback between the transistors. Guidelines for preventing latch-up include using guard rings connected to power and ground around transistors to reduce resistance and capture minority carriers, as well as placing wells and substrate contacts close to transistor sources.
The document discusses latch-up in CMOS analog switches and how to prevent it. Latch-up occurs when a parasitic SCR structure forms a low-impedance path between power rails, allowing excessive current flow. It can be triggered by overvoltages, signals exceeding supply rails, or improper power sequencing. Prevention methods include adding diodes to limit voltages, ensuring supplies are applied properly, and using trench isolation processing to eliminate parasitic transistors and make devices latch-up proof.
This document discusses CMOS logic circuits. It begins by explaining that CMOS is the dominant technology for digital circuits due to its low power dissipation. It then discusses the structure and operation of the basic CMOS inverter circuit. Key points include that CMOS circuits use complementary NMOS and PMOS transistors to switch the output between power and ground with very low static power. The document also discusses parameters for characterizing logic circuits like propagation delay and noise margins. It describes how to synthesize more complex CMOS gates from their Boolean expressions by constructing pull-down and pull-up networks. Specific gates like NOR, NAND, and XOR are analyzed. Transistor sizing is also covered to ensure adequate driving capability.
In this paper a review of the dynamic logic circuit design has been done as these circuits are used due to their high performance, high speed and less number of transistors in the circuit. The number of required transistors is lesser than the CMOS logic style. The OR dynamic logic style is not applicable as it has low noise tolerance at the dynamic stage which can change the output. Domino logic uses one static CMOS inverter at the output of dynamic node which is more noise immune and has less capacitance at the output node.
This document describes domino CMOS logic. It explains that domino CMOS logic cascades a dynamic CMOS logic stage with a static CMOS inverter stage. During precharge, the dynamic stage output is high and the inverter output is low. During evaluation, the dynamic stage output can either discharge low or remain high, triggering the next stage. Multiple stages can be cascaded like falling dominoes. Limitations include only supporting non-inverting logic and susceptibility to charge sharing errors. Ways to prevent errors include adding weak pull-up transistors and precharging all high-capacitance nodes. Performance can be improved by adjusting transistor sizes to reduce discharge time.
The document summarizes research on designing high-speed, low-power domino logic circuits. It first introduces domino logic and its advantages over static CMOS logic in terms of performance. It then describes the conventional design method for domino logic circuits before proposing an optimized method. Simulation results show the proposed method achieves lower power consumption compared to CMOS implementations for full adder circuits. The document concludes that domino logic circuits offer improved speed and power performance making them well-suited for high-performance, low-power applications.
This presentation has given a brief introduction and working of CMOS Logic Structures which includes MOS logic, CMOS logic, CMOS logic structure, CMOS complementary logic, pass transistor logic, bi CMOS logic, pseudo –nMOS logic, CMOS domino logic, Cascode Voltage Switch Logic(CVSL), clocked CMOS logic(c²mos), dynamic CMOS logic
Performance Analysis of Encoder in Different Logic Techniques for High-Speed ...Achintya Kumar
In designing a system, we can replace cell components by appropriate technique based cell so that the noise margin of overall circuit is improved. In future we can also implement some techniques for sequential circuits.
Latch-up occurs in CMOS chips due to the interaction of parasitic bipolar transistors that form a silicon-controlled rectifier between the power and ground rails. This can cause excessive currents and potentially damage devices. Latch-up can be triggered by disturbances that increase the collector current of one of the parasitic transistors, activating positive feedback between the transistors. Guidelines for preventing latch-up include using guard rings connected to power and ground around transistors to reduce resistance and capture minority carriers, as well as placing wells and substrate contacts close to transistor sources.
The document discusses latch-up in CMOS analog switches and how to prevent it. Latch-up occurs when a parasitic SCR structure forms a low-impedance path between power rails, allowing excessive current flow. It can be triggered by overvoltages, signals exceeding supply rails, or improper power sequencing. Prevention methods include adding diodes to limit voltages, ensuring supplies are applied properly, and using trench isolation processing to eliminate parasitic transistors and make devices latch-up proof.
This document discusses CMOS logic circuits. It begins by explaining that CMOS is the dominant technology for digital circuits due to its low power dissipation. It then discusses the structure and operation of the basic CMOS inverter circuit. Key points include that CMOS circuits use complementary NMOS and PMOS transistors to switch the output between power and ground with very low static power. The document also discusses parameters for characterizing logic circuits like propagation delay and noise margins. It describes how to synthesize more complex CMOS gates from their Boolean expressions by constructing pull-down and pull-up networks. Specific gates like NOR, NAND, and XOR are analyzed. Transistor sizing is also covered to ensure adequate driving capability.
In this paper a review of the dynamic logic circuit design has been done as these circuits are used due to their high performance, high speed and less number of transistors in the circuit. The number of required transistors is lesser than the CMOS logic style. The OR dynamic logic style is not applicable as it has low noise tolerance at the dynamic stage which can change the output. Domino logic uses one static CMOS inverter at the output of dynamic node which is more noise immune and has less capacitance at the output node.
This document describes domino CMOS logic. It explains that domino CMOS logic cascades a dynamic CMOS logic stage with a static CMOS inverter stage. During precharge, the dynamic stage output is high and the inverter output is low. During evaluation, the dynamic stage output can either discharge low or remain high, triggering the next stage. Multiple stages can be cascaded like falling dominoes. Limitations include only supporting non-inverting logic and susceptibility to charge sharing errors. Ways to prevent errors include adding weak pull-up transistors and precharging all high-capacitance nodes. Performance can be improved by adjusting transistor sizes to reduce discharge time.
The document summarizes research on designing high-speed, low-power domino logic circuits. It first introduces domino logic and its advantages over static CMOS logic in terms of performance. It then describes the conventional design method for domino logic circuits before proposing an optimized method. Simulation results show the proposed method achieves lower power consumption compared to CMOS implementations for full adder circuits. The document concludes that domino logic circuits offer improved speed and power performance making them well-suited for high-performance, low-power applications.
This presentation has given a brief introduction and working of CMOS Logic Structures which includes MOS logic, CMOS logic, CMOS logic structure, CMOS complementary logic, pass transistor logic, bi CMOS logic, pseudo –nMOS logic, CMOS domino logic, Cascode Voltage Switch Logic(CVSL), clocked CMOS logic(c²mos), dynamic CMOS logic
The document discusses CMOS technology which uses both NMOS and PMOS transistors in a complementary way. It has low power dissipation as power is only consumed during switching. CMOS circuits like inverters, NAND and NOR gates are constructed using a pull-up network of PMOS transistors and a pull-down network of NMOS transistors. The fabrication of CMOS transistors involves depositing and patterning materials on a silicon wafer through lithography. CMOS has advantages like low power, high noise immunity and is widely used in applications like computers, processors and memory chips.
This document discusses dynamic logic circuits. It notes that dynamic logic circuits offer advantages over static logic circuits by temporarily storing charge in parasitic capacitances rather than relying on steady-state behavior. Dynamic logic circuits require periodic clock signals to control charge refreshing and allow for simple sequential circuits with memory. They can implement logic in smaller areas and thus consume less power than static logic. The document then discusses several examples of dynamic logic circuits like dynamic CMOS TG logic, domino CMOS logic, NORA logic, and their operating principles. It also covers issues like charge leakage and charge sharing that need to be addressed in dynamic logic circuits.
This presentation discusses the basics of Pass Transistor Logic, its advantages, limitation and finally implementation of Boolean functions/Combinational Logic circuits using Pass Transistor Logic.
This document provides an overview of CMOS technology. It discusses how CMOS circuits use complementary pairs of NMOS and PMOS transistors to implement logic gates like inverters. The CMOS inverter uses one transistor to pull the output low and the other to pull it high, allowing for low power operation. Larger CMOS logic gates consist of pull-down and pull-up networks of NMOS and PMOS transistors respectively. Transistor sizing is also covered, with sizing done to ensure equal driving capability between pull-up and pull-down networks.
This document discusses the CMOS inverter. It explains the switch models of the CMOS inverter and how the input signals determine whether the NMOS or PMOS transistor is on. It also discusses the properties of static CMOS inverters, including their voltage transfer characteristic curve and noise margins. The document describes how process variations and supply voltage scaling can impact the inverter's performance. Finally, it examines the dynamic behavior of the CMOS inverter and the parasitic capacitances that affect its switching speeds.
The document discusses the CMOS inverter, including its basic structure and operation, transient response characteristics, voltage transfer curve, propagation delay, and design considerations for improving performance such as minimizing delay. It provides analysis of how varying factors like transistor widths, supply voltage, and load capacitance affect the inverter's switching threshold, rise/fall times, and propagation delay. The goal of the analysis is to determine the optimal transistor width ratios and device parameters needed to design a high-performance symmetric CMOS inverter with minimum total propagation delay.
The document is about CMOS logic design. It covers topics such as logic values and encoding bits in digital systems, logic gates and families, MOS transistors, CMOS inverters and their electrical characteristics. It discusses power consumption analysis of CMOS circuits including static and dynamic power. It also covers pull-up and pull-down networks, DC analysis of CMOS inverters, beta ratio, switching characteristics of inverters and examples of CMOS logic gates like inverters, NAND, NOR, buffers and AND/OR gates.
Ad vlsi pass-transistor logic_yalagoud_patilYalagoud Patil
Pass-transistor logic uses transistors as switches to pass logic levels between circuit nodes, rather than connecting directly to power supplies, reducing the number of active devices. It has advantages over standard NMOS gate logic like being minimum geometry and dissipating no standby power. However, voltage differences decrease between logic levels at each stage.
General functional blocks can implement all 16 logic functions of two inputs using NMOS or CMOS pass transistors controlled by four input signals. NMOS blocks pull down to ground but only up to a threshold below power, while CMOS transmission gates can output strong ones and zeros. Precharge logic can reduce the size of CMOS blocks.
The document summarizes the operation of a CMOS transmission gate (TG). A TG consists of a parallel nMOS and pMOS transistor that act as a bidirectional switch controlled by complementary signals on the gates. When the control input is high, both transistors are off and the TG acts as a high impedance state. When the control input is low, one transistor is on providing a conduction path from input to output. The document further analyzes the DC characteristics of a TG under different bias conditions.
Sequential logic circuits contain memory and feedback loops that make their output depend on the present state and inputs. This document discusses several types of basic memory cells and latches used in sequential logic like the SR latch, JK latch, D latch, and flip-flops. It provides schematics and explanations of how CMOS-based implementations of these sequential elements work through the use of NOR gates, NAND gates, and transmission gates controlled by a clock signal. Basic timing considerations are also covered, such as setup and hold times.
The document discusses CMOS inverters, NAND gates, and NOR gates. It describes the components and operation of each circuit. For CMOS inverters, it explains that one p-channel and one n-channel MOSFET are connected in series, with their gates connected as the input and drains as the output. A NAND gate uses two p-channel MOSFETs in parallel and two n-channel in series, while a NOR gate uses two p-channel in series and two n-channel in parallel. Truth tables are provided for each gate. Advantages of CMOS circuits include low power consumption and high noise immunity, while disadvantages are low switching speed and greater propagation delay.
NMOS is nothing but negative channel metal oxide semiconductor; it is pronounced as en-moss. It is a type of semiconductor that charges negatively.
NMOS advantages, disadvantage, TTL, DTL
Distortion Analysis of Differential AmplifierIOSR Journals
Abstract: The linearity of the CMOS is of major concern in the design of many analog circuits. In this paper the nonlinearity behavior of CMOS analog integrated circuits is investigated.The basic building block of analog integrated circuits such as differential amplifier with current mirror load have been chosen for harmonic distortion analysis.A mechanism to analyze the distortion of CMOS circuits in deep submicron technology that can be easily used to detect the distortion is built.The MOSFET model used for simulation is TSMC BSIM3 SPICE model from 0.13-μm CMOS process technology. HSPICE circuit simulator tool is used for distortion analysis of CMOS circuits. The MOS model used in this paper includes short-channel effects and gate-source capacitance, gate-drain capacitance, output resistance of MOS transistor. Analytical results are compared with simulation results and the influences of circuit parameters on circuit linearity are discussed.
Keywords: Analog Integrated Circuits, CMOSanalog integrated circuits, harmonic distortion, HSPICE, Short-channel effects, small signal analysis, transient analysis.
Dee 6113 CMOS IC DESIGN (Chapter 3 ~ CMOS inverter)MielWitwicky
Question 4
a) Draw a schematic diagram of an inverter.
b) Voltage Transfer Characteristics (VTC) is a plot of output voltage as a function of the input voltage. Draw and label the VTC of a CMOS inverter.
c) The inverter is really the nucleus of all digital design. Once its operation and properties are clearly understood, designing more intricate structures such as NAND gates, address, multipliers, and microprocessors is greatly simplified. Therefore, interpret the properties of static CMOS inverter circuit.
The document discusses CMOS transistor fabrication and scaling. It addresses two key problems with CMOS operation: latch-up and parasitic capacitance. Latch-up can permanently damage transistors, while parasitic capacitance limits high frequency performance. Methods to overcome these issues include latch-up protection circuits, increasing distances between wells/junctions, and partially disconnecting parasitic devices from ground terminals. CMOS technologies like P-well, N-well, and SOI were compared in terms of mitigating latch-up and parasitic capacitance. The document also covers MOS scaling theory and its impacts on circuit performance and power consumption over time as feature sizes decreased from submicron to deep submicron to nanotechnology levels.
The document describes the structure and operation of a metal-oxide-semiconductor field-effect transistor (MOSFET). It details the three main components: the gate, source, and drain electrodes separated by a thin gate oxide layer. Depending on the gate voltage relative to the threshold voltage, the MOSFET can be in one of three operating modes - cutoff, linear, or saturation - determining whether current flows between the source and drain. Enhancement mode MOSFETs require a gate voltage to turn on, functioning like a normally open switch, while depletion mode MOSFETs require a gate voltage to turn off, functioning like a normally closed switch.
This document discusses pass transistor logic, which uses MOS transistors to transfer charge between circuit nodes under gate control. It describes how nMOS and pMOS transistors can pass strong or weak signals depending on their configuration. Threshold voltage drops, charge sharing problems, and sneak paths that can occur in pass transistor logic circuits are also covered. The document provides examples of analyzing charge distribution before and after transistors turn on, and presents a general design for pass transistor logic gates that ensures both charging and discharging paths exist. Exercises are included on analyzing charge sharing and designing pass transistor logic circuits like majority gates and decoders.
This document discusses MOS transistor theory, including MOS structure, ideal and non-ideal I-V characteristics, capacitance models, and delay models. It describes how MOS transistors operate in different modes depending on terminal voltages and how carrier mobility and channel charge determine current in linear and saturation regions. Non-ideal effects like velocity saturation, body effect, and leakage currents are also covered. The document concludes with discussions of pass transistors, tri-state inverters, and using resistor-capacitor models to estimate delay.
vlsi 2 unit.pdfvlsi unit 2 important notes for ece departmentnitcse
The document discusses power dissipation in CMOS circuits. It describes the two main sources of power dissipation as dynamic and static power. Dynamic power is caused by charging and discharging of capacitive loads during switching. Static power arises from leakage currents even when the circuit is not switching. The document outlines techniques to reduce both dynamic and static power consumption, such as multi-threshold CMOS, power gating, and minimizing switching activity.
This document discusses CMOS digital integrated circuits and combinational logic circuits. It covers static CMOS circuits, NMOS and PMOS transistors, threshold calculations for logic gates like NOR and NAND, layout of logic gates, and device sizing in complex gates. The key points are:
- Static CMOS circuits have a continuous low-resistance path between outputs and power/ground.
- Threshold calculations allow NOR and NAND gates to switch at VDD/2.
- Layout and stick diagrams show transistor positions and connections for logic gates.
- Device sizing methods ensure all signal paths can support switching.
The document discusses CMOS technology which uses both NMOS and PMOS transistors in a complementary way. It has low power dissipation as power is only consumed during switching. CMOS circuits like inverters, NAND and NOR gates are constructed using a pull-up network of PMOS transistors and a pull-down network of NMOS transistors. The fabrication of CMOS transistors involves depositing and patterning materials on a silicon wafer through lithography. CMOS has advantages like low power, high noise immunity and is widely used in applications like computers, processors and memory chips.
This document discusses dynamic logic circuits. It notes that dynamic logic circuits offer advantages over static logic circuits by temporarily storing charge in parasitic capacitances rather than relying on steady-state behavior. Dynamic logic circuits require periodic clock signals to control charge refreshing and allow for simple sequential circuits with memory. They can implement logic in smaller areas and thus consume less power than static logic. The document then discusses several examples of dynamic logic circuits like dynamic CMOS TG logic, domino CMOS logic, NORA logic, and their operating principles. It also covers issues like charge leakage and charge sharing that need to be addressed in dynamic logic circuits.
This presentation discusses the basics of Pass Transistor Logic, its advantages, limitation and finally implementation of Boolean functions/Combinational Logic circuits using Pass Transistor Logic.
This document provides an overview of CMOS technology. It discusses how CMOS circuits use complementary pairs of NMOS and PMOS transistors to implement logic gates like inverters. The CMOS inverter uses one transistor to pull the output low and the other to pull it high, allowing for low power operation. Larger CMOS logic gates consist of pull-down and pull-up networks of NMOS and PMOS transistors respectively. Transistor sizing is also covered, with sizing done to ensure equal driving capability between pull-up and pull-down networks.
This document discusses the CMOS inverter. It explains the switch models of the CMOS inverter and how the input signals determine whether the NMOS or PMOS transistor is on. It also discusses the properties of static CMOS inverters, including their voltage transfer characteristic curve and noise margins. The document describes how process variations and supply voltage scaling can impact the inverter's performance. Finally, it examines the dynamic behavior of the CMOS inverter and the parasitic capacitances that affect its switching speeds.
The document discusses the CMOS inverter, including its basic structure and operation, transient response characteristics, voltage transfer curve, propagation delay, and design considerations for improving performance such as minimizing delay. It provides analysis of how varying factors like transistor widths, supply voltage, and load capacitance affect the inverter's switching threshold, rise/fall times, and propagation delay. The goal of the analysis is to determine the optimal transistor width ratios and device parameters needed to design a high-performance symmetric CMOS inverter with minimum total propagation delay.
The document is about CMOS logic design. It covers topics such as logic values and encoding bits in digital systems, logic gates and families, MOS transistors, CMOS inverters and their electrical characteristics. It discusses power consumption analysis of CMOS circuits including static and dynamic power. It also covers pull-up and pull-down networks, DC analysis of CMOS inverters, beta ratio, switching characteristics of inverters and examples of CMOS logic gates like inverters, NAND, NOR, buffers and AND/OR gates.
Ad vlsi pass-transistor logic_yalagoud_patilYalagoud Patil
Pass-transistor logic uses transistors as switches to pass logic levels between circuit nodes, rather than connecting directly to power supplies, reducing the number of active devices. It has advantages over standard NMOS gate logic like being minimum geometry and dissipating no standby power. However, voltage differences decrease between logic levels at each stage.
General functional blocks can implement all 16 logic functions of two inputs using NMOS or CMOS pass transistors controlled by four input signals. NMOS blocks pull down to ground but only up to a threshold below power, while CMOS transmission gates can output strong ones and zeros. Precharge logic can reduce the size of CMOS blocks.
The document summarizes the operation of a CMOS transmission gate (TG). A TG consists of a parallel nMOS and pMOS transistor that act as a bidirectional switch controlled by complementary signals on the gates. When the control input is high, both transistors are off and the TG acts as a high impedance state. When the control input is low, one transistor is on providing a conduction path from input to output. The document further analyzes the DC characteristics of a TG under different bias conditions.
Sequential logic circuits contain memory and feedback loops that make their output depend on the present state and inputs. This document discusses several types of basic memory cells and latches used in sequential logic like the SR latch, JK latch, D latch, and flip-flops. It provides schematics and explanations of how CMOS-based implementations of these sequential elements work through the use of NOR gates, NAND gates, and transmission gates controlled by a clock signal. Basic timing considerations are also covered, such as setup and hold times.
The document discusses CMOS inverters, NAND gates, and NOR gates. It describes the components and operation of each circuit. For CMOS inverters, it explains that one p-channel and one n-channel MOSFET are connected in series, with their gates connected as the input and drains as the output. A NAND gate uses two p-channel MOSFETs in parallel and two n-channel in series, while a NOR gate uses two p-channel in series and two n-channel in parallel. Truth tables are provided for each gate. Advantages of CMOS circuits include low power consumption and high noise immunity, while disadvantages are low switching speed and greater propagation delay.
NMOS is nothing but negative channel metal oxide semiconductor; it is pronounced as en-moss. It is a type of semiconductor that charges negatively.
NMOS advantages, disadvantage, TTL, DTL
Distortion Analysis of Differential AmplifierIOSR Journals
Abstract: The linearity of the CMOS is of major concern in the design of many analog circuits. In this paper the nonlinearity behavior of CMOS analog integrated circuits is investigated.The basic building block of analog integrated circuits such as differential amplifier with current mirror load have been chosen for harmonic distortion analysis.A mechanism to analyze the distortion of CMOS circuits in deep submicron technology that can be easily used to detect the distortion is built.The MOSFET model used for simulation is TSMC BSIM3 SPICE model from 0.13-μm CMOS process technology. HSPICE circuit simulator tool is used for distortion analysis of CMOS circuits. The MOS model used in this paper includes short-channel effects and gate-source capacitance, gate-drain capacitance, output resistance of MOS transistor. Analytical results are compared with simulation results and the influences of circuit parameters on circuit linearity are discussed.
Keywords: Analog Integrated Circuits, CMOSanalog integrated circuits, harmonic distortion, HSPICE, Short-channel effects, small signal analysis, transient analysis.
Dee 6113 CMOS IC DESIGN (Chapter 3 ~ CMOS inverter)MielWitwicky
Question 4
a) Draw a schematic diagram of an inverter.
b) Voltage Transfer Characteristics (VTC) is a plot of output voltage as a function of the input voltage. Draw and label the VTC of a CMOS inverter.
c) The inverter is really the nucleus of all digital design. Once its operation and properties are clearly understood, designing more intricate structures such as NAND gates, address, multipliers, and microprocessors is greatly simplified. Therefore, interpret the properties of static CMOS inverter circuit.
The document discusses CMOS transistor fabrication and scaling. It addresses two key problems with CMOS operation: latch-up and parasitic capacitance. Latch-up can permanently damage transistors, while parasitic capacitance limits high frequency performance. Methods to overcome these issues include latch-up protection circuits, increasing distances between wells/junctions, and partially disconnecting parasitic devices from ground terminals. CMOS technologies like P-well, N-well, and SOI were compared in terms of mitigating latch-up and parasitic capacitance. The document also covers MOS scaling theory and its impacts on circuit performance and power consumption over time as feature sizes decreased from submicron to deep submicron to nanotechnology levels.
The document describes the structure and operation of a metal-oxide-semiconductor field-effect transistor (MOSFET). It details the three main components: the gate, source, and drain electrodes separated by a thin gate oxide layer. Depending on the gate voltage relative to the threshold voltage, the MOSFET can be in one of three operating modes - cutoff, linear, or saturation - determining whether current flows between the source and drain. Enhancement mode MOSFETs require a gate voltage to turn on, functioning like a normally open switch, while depletion mode MOSFETs require a gate voltage to turn off, functioning like a normally closed switch.
This document discusses pass transistor logic, which uses MOS transistors to transfer charge between circuit nodes under gate control. It describes how nMOS and pMOS transistors can pass strong or weak signals depending on their configuration. Threshold voltage drops, charge sharing problems, and sneak paths that can occur in pass transistor logic circuits are also covered. The document provides examples of analyzing charge distribution before and after transistors turn on, and presents a general design for pass transistor logic gates that ensures both charging and discharging paths exist. Exercises are included on analyzing charge sharing and designing pass transistor logic circuits like majority gates and decoders.
This document discusses MOS transistor theory, including MOS structure, ideal and non-ideal I-V characteristics, capacitance models, and delay models. It describes how MOS transistors operate in different modes depending on terminal voltages and how carrier mobility and channel charge determine current in linear and saturation regions. Non-ideal effects like velocity saturation, body effect, and leakage currents are also covered. The document concludes with discussions of pass transistors, tri-state inverters, and using resistor-capacitor models to estimate delay.
vlsi 2 unit.pdfvlsi unit 2 important notes for ece departmentnitcse
The document discusses power dissipation in CMOS circuits. It describes the two main sources of power dissipation as dynamic and static power. Dynamic power is caused by charging and discharging of capacitive loads during switching. Static power arises from leakage currents even when the circuit is not switching. The document outlines techniques to reduce both dynamic and static power consumption, such as multi-threshold CMOS, power gating, and minimizing switching activity.
This document discusses CMOS digital integrated circuits and combinational logic circuits. It covers static CMOS circuits, NMOS and PMOS transistors, threshold calculations for logic gates like NOR and NAND, layout of logic gates, and device sizing in complex gates. The key points are:
- Static CMOS circuits have a continuous low-resistance path between outputs and power/ground.
- Threshold calculations allow NOR and NAND gates to switch at VDD/2.
- Layout and stick diagrams show transistor positions and connections for logic gates.
- Device sizing methods ensure all signal paths can support switching.
A Survey Analysis on CMOS Integrated Circuits with Clock-Gated Logic StructureIJERA Editor
Various circuit design techniques has been presented to improve noise tolerance of the proposed CGS logic families. Noise in deep submicron technology limits the reliability and performance of ICs. The ANTE (Average Noise Threshold Energy) metric is used for the analysis of noise tolerance of proposed CGS. A 2-input NAND and NOR gate is designed by the proposed technique. Simulation results for a 2-input NAND gate at clock gated logic show that the proposed noise tolerant circuit achieves 1.79X ANTE improvement along with the reduction in leakage power. Continuous scaling of technology towards the manometer range significantly increases leakage current level and the effect of noise. This research can be further extended for performance optimization in terms of power, speed, area and noise immunity.
MOS Inverters Switching Characterstics and interconnect Effects-converted.pptxBalraj Singh
This document discusses MOS inverters and their switching characteristics. It introduces various parasitic capacitances associated with MOSFETs that affect inverter delay times. Delay time is defined as the time required for the output voltage to transition between logic levels. Formulas are provided to calculate delay times based on the load and average charging/discharging currents. The document also discusses estimating interconnect parasitic capacitances and resistances, and how to model interconnects as transmission lines at small scales. Methods for calculating delay due to interconnects such as the Elmore delay are presented. Buffer design to minimize delay for large capacitive loads is also covered.
The document discusses CMOS technology which uses complementary PMOS and NMOS transistors. It has low power dissipation as only one transistor is on at a time. CMOS circuits like inverters and logic gates like NAND and NOR are constructed using a pull-up network of PMOS transistors and a pull-down network of NMOS transistors. The fabrication of CMOS transistors involves lithography processes. CMOS has advantages like low power, high noise immunity and is widely used in computer chips, memories and microprocessors.
This document discusses designing combinational logic circuits using static complementary CMOS design. It explains how to construct static CMOS circuits for logic gates like NAND and NOR by using pull-up and pull-down networks of PMOS and NMOS transistors respectively. Issues related to pass-transistor design like noise margins and static power consumption are also covered. The document provides details on implementing various logic functions using pass-transistor logic and differential pass-transistor logic. It discusses solutions to overcome the disadvantages of pass-transistor logic like level restoration and use of multiple threshold transistors.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
The document discusses two frequency limitation factors in MOSFETs: channel transit time and gate capacitance charging time. It defines cutoff frequency as the frequency where the current gain is unity. It describes CMOS technology, including p-well, n-well and twin-well processes, and discusses latch-up in CMOS circuits which can be prevented through minority carrier lifetime degradation or layout techniques.
The document discusses the need for low power VLSI circuit design. Portable devices require low power consumption to extend battery life as battery energy density is still limited. Reducing power is also important for reliability and cooling complex high performance chips. Power in CMOS circuits has three main components - dynamic switching power when nodes charge and discharge, short circuit power during transitions, and leakage power even when static. Dynamic power depends on load capacitance, supply voltage, and switching activity. Lowering voltage significantly reduces dynamic power but increases delay.
This document discusses power consumption in CMOS devices. It outlines the main sources of power dissipation including dynamic power, short circuit power, and static/leakage power. Dynamic power is proportional to the capacitive load and supply voltage. Short circuit power depends on the peak short circuit current. Static power includes leakage from reverse biased p-n junctions, subthreshold leakage, gate leakage, gate induced drain leakage, and punchthrough. The document discusses various techniques to reduce each component of power dissipation such as lowering supply voltage, increasing threshold voltage, and power gating.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
This document summarizes a research paper that proposes using Double Pass Transistor Logic (DPL) to build high-performance wave pipeline circuits. DPL can provide balanced delay across all paths without increasing area or latency. It does not require special fabrication steps unlike other proposed logic styles. The paper describes DPL gate design and discusses how it addresses limitations of existing logic styles for building balanced, low-latency wave pipelines. Evaluation shows DPL enables building ultra-fast pipelined systems without pipeline registers by exploiting wave pipelining.
This document summarizes research on gate leakage reduction techniques for deep submicron integrated circuits. It discusses how gate leakage has become a significant source of power dissipation as devices are scaled down, due to increased subthreshold leakage, gate oxide tunneling, and reverse bias junction leakage. The document then describes complementary pass transistor logic (CPL) and differential cascade voltage switch logic (DCVSL) as logic families that aim to reduce static power by using fewer transistors and eliminating inverters.
low pw and leakage current techniques for cmos circuitsAnamika Pancholi
This document discusses various techniques to reduce leakage power in CMOS circuits, including the sleep mode approach, stack mode approach, leakage feedback approach, sleepy stack approach, and sleepy keeper approach. It then proposes a new LECTOR technique which introduces two leakage control transistors between the pull-up and pull-down circuits to ensure that one transistor is always near cutoff, reducing leakage power dissipation. The document concludes that leakage reduction is important for VLSI circuit design as scaling continues, and that the LECTOR method is effective at reducing leakage power in both active and standby modes.
This document summarizes digital CMOS logic circuits. It discusses that CMOS is the most popular technology for implementing digital systems due to its small size, ease of fabrication, and low power dissipation. It then describes the characteristics used to evaluate logic circuit families, including noise margins, propagation delay, power dissipation, and fan-in/fan-out. Finally, it discusses the basic structure of CMOS logic gates which use pull-up and pull-down transistor networks to output a 0 or 1.
This document provides an introduction to VLSI (Very Large Scale Integration) and the history of transistor scaling. It discusses the following key points in 3 sentences:
The document traces the history of integrated circuits from the first transistor in 1958 to modern chips containing billions of transistors. It explains how scaling down transistor sizes has allowed for exponential increases in processing power and memory density over time. The document also introduces different transistor types (bipolar, MOSFET) and scaling techniques (constant field, constant voltage) used to continue shrinking dimensions and improving performance of integrated circuits.
This document discusses dynamic logic circuits. It describes how dynamic circuits use temporary storage of signal values on capacitance rather than a static low or high value. Dynamic circuits have advantages like smaller silicon area and lower power compared to static circuits, but require a clock and are susceptible to charge leakage issues. Several types of dynamic logic are described, including dynamic latches, dynamic shift registers, and domino logic, which cascades evaluation stages to improve speed but can have charge sharing problems. Precharge-evaluate and other clocked dynamic logic styles aim to address these issues.
UNIT-4-Logic styles for low power_part_2.pptRavi Selvaraj
There are two approaches to realize digital circuits using MOS technology: gate logic and switch logic. Gate logic uses inverters and gates like NAND and NOR, while switch logic uses pass transistors. There are also two types of gates - static and dynamic. Static gates do not need a clock, while dynamic gates use intrinsic capacitors that must be refreshed regularly to avoid information loss. The document discusses three logic styles for low power design: static CMOS logic, dynamic CMOS logic, and pass transistor logic (PTL), outlining their advantages and disadvantages in area, power, speed, and complexity.
The document discusses MOS transistor technology and CMOS logic circuits. It begins with an introduction to MOS transistors, including definitions of Moore's law, CMOS technology, and the advantages of CMOS over NMOS. It then covers MOS transistor characteristics, operating modes, and comparisons of NMOS/PMOS and enhancement/depletion devices. The document next discusses combination logic circuits, including definitions of Elmore delay model, types of power dissipation, and methods to reduce power. It also covers topics like transmission gates, pass transistors, and dynamic circuits.
This document outlines different types of MOS inverters used in integrated circuits. It discusses 7 main types: resistive load inverter, enhancement mode device (EMD) inverter, depletion mode device (DMD) inverter, CMOS inverter, pseudo CMOS inverter, BiCMOS inverter, and dynamic MOS inverter. For each type, it provides the circuit configuration, operating principles, advantages and disadvantages. It also gives examples of inverter symbols and their truth tables. The document aims to explain the basic concepts of MOS inverter design.
This presentation by OECD, OECD Secretariat, was made during the discussion “Artificial Intelligence, Data and Competition” held at the 143rd meeting of the OECD Competition Committee on 12 June 2024. More papers and presentations on the topic can be found at oe.cd/aicomp.
This presentation was uploaded with the author’s consent.
This presentation by OECD, OECD Secretariat, was made during the discussion “Competition and Regulation in Professions and Occupations” held at the 77th meeting of the OECD Working Party No. 2 on Competition and Regulation on 10 June 2024. More papers and presentations on the topic can be found at oe.cd/crps.
This presentation was uploaded with the author’s consent.
The importance of sustainable and efficient computational practices in artificial intelligence (AI) and deep learning has become increasingly critical. This webinar focuses on the intersection of sustainability and AI, highlighting the significance of energy-efficient deep learning, innovative randomization techniques in neural networks, the potential of reservoir computing, and the cutting-edge realm of neuromorphic computing. This webinar aims to connect theoretical knowledge with practical applications and provide insights into how these innovative approaches can lead to more robust, efficient, and environmentally conscious AI systems.
Webinar Speaker: Prof. Claudio Gallicchio, Assistant Professor, University of Pisa
Claudio Gallicchio is an Assistant Professor at the Department of Computer Science of the University of Pisa, Italy. His research involves merging concepts from Deep Learning, Dynamical Systems, and Randomized Neural Systems, and he has co-authored over 100 scientific publications on the subject. He is the founder of the IEEE CIS Task Force on Reservoir Computing, and the co-founder and chair of the IEEE Task Force on Randomization-based Neural Networks and Learning Systems. He is an associate editor of IEEE Transactions on Neural Networks and Learning Systems (TNNLS).
This presentation by OECD, OECD Secretariat, was made during the discussion “The Intersection between Competition and Data Privacy” held at the 143rd meeting of the OECD Competition Committee on 13 June 2024. More papers and presentations on the topic can be found at oe.cd/ibcdp.
This presentation was uploaded with the author’s consent.
Why Psychological Safety Matters for Software Teams - ACE 2024 - Ben Linders.pdfBen Linders
Psychological safety in teams is important; team members must feel safe and able to communicate and collaborate effectively to deliver value. It’s also necessary to build long-lasting teams since things will happen and relationships will be strained.
But, how safe is a team? How can we determine if there are any factors that make the team unsafe or have an impact on the team’s culture?
In this mini-workshop, we’ll play games for psychological safety and team culture utilizing a deck of coaching cards, The Psychological Safety Cards. We will learn how to use gamification to gain a better understanding of what’s going on in teams. Individuals share what they have learned from working in teams, what has impacted the team’s safety and culture, and what has led to positive change.
Different game formats will be played in groups in parallel. Examples are an ice-breaker to get people talking about psychological safety, a constellation where people take positions about aspects of psychological safety in their team or organization, and collaborative card games where people work together to create an environment that fosters psychological safety.
This presentation by Katharine Kemp, Associate Professor at the Faculty of Law & Justice at UNSW Sydney, was made during the discussion “The Intersection between Competition and Data Privacy” held at the 143rd meeting of the OECD Competition Committee on 13 June 2024. More papers and presentations on the topic can be found at oe.cd/ibcdp.
This presentation was uploaded with the author’s consent.
This presentation by Thibault Schrepel, Associate Professor of Law at Vrije Universiteit Amsterdam University, was made during the discussion “Artificial Intelligence, Data and Competition” held at the 143rd meeting of the OECD Competition Committee on 12 June 2024. More papers and presentations on the topic can be found at oe.cd/aicomp.
This presentation was uploaded with the author’s consent.
This presentation by Juraj Čorba, Chair of OECD Working Party on Artificial Intelligence Governance (AIGO), was made during the discussion “Artificial Intelligence, Data and Competition” held at the 143rd meeting of the OECD Competition Committee on 12 June 2024. More papers and presentations on the topic can be found at oe.cd/aicomp.
This presentation was uploaded with the author’s consent.
This presentation by Professor Giuseppe Colangelo, Jean Monnet Professor of European Innovation Policy, was made during the discussion “The Intersection between Competition and Data Privacy” held at the 143rd meeting of the OECD Competition Committee on 13 June 2024. More papers and presentations on the topic can be found at oe.cd/ibcdp.
This presentation was uploaded with the author’s consent.
This presentation by Tim Capel, Director of the UK Information Commissioner’s Office Legal Service, was made during the discussion “The Intersection between Competition and Data Privacy” held at the 143rd meeting of the OECD Competition Committee on 13 June 2024. More papers and presentations on the topic can be found at oe.cd/ibcdp.
This presentation was uploaded with the author’s consent.
This presentation by Nathaniel Lane, Associate Professor in Economics at Oxford University, was made during the discussion “Pro-competitive Industrial Policy” held at the 143rd meeting of the OECD Competition Committee on 12 June 2024. More papers and presentations on the topic can be found at oe.cd/pcip.
This presentation was uploaded with the author’s consent.
This presentation by Professor Alex Robson, Deputy Chair of Australia’s Productivity Commission, was made during the discussion “Competition and Regulation in Professions and Occupations” held at the 77th meeting of the OECD Working Party No. 2 on Competition and Regulation on 10 June 2024. More papers and presentations on the topic can be found at oe.cd/crps.
This presentation was uploaded with the author’s consent.
Suzanne Lagerweij - Influence Without Power - Why Empathy is Your Best Friend...Suzanne Lagerweij
This is a workshop about communication and collaboration. We will experience how we can analyze the reasons for resistance to change (exercise 1) and practice how to improve our conversation style and be more in control and effective in the way we communicate (exercise 2).
This session will use Dave Gray’s Empathy Mapping, Argyris’ Ladder of Inference and The Four Rs from Agile Conversations (Squirrel and Fredrick).
Abstract:
Let’s talk about powerful conversations! We all know how to lead a constructive conversation, right? Then why is it so difficult to have those conversations with people at work, especially those in powerful positions that show resistance to change?
Learning to control and direct conversations takes understanding and practice.
We can combine our innate empathy with our analytical skills to gain a deeper understanding of complex situations at work. Join this session to learn how to prepare for difficult conversations and how to improve our agile conversations in order to be more influential without power. We will use Dave Gray’s Empathy Mapping, Argyris’ Ladder of Inference and The Four Rs from Agile Conversations (Squirrel and Fredrick).
In the session you will experience how preparing and reflecting on your conversation can help you be more influential at work. You will learn how to communicate more effectively with the people needed to achieve positive change. You will leave with a self-revised version of a difficult conversation and a practical model to use when you get back to work.
Come learn more on how to become a real influencer!
Carrer goals.pptx and their importance in real lifeartemacademy2
Career goals serve as a roadmap for individuals, guiding them toward achieving long-term professional aspirations and personal fulfillment. Establishing clear career goals enables professionals to focus their efforts on developing specific skills, gaining relevant experience, and making strategic decisions that align with their desired career trajectory. By setting both short-term and long-term objectives, individuals can systematically track their progress, make necessary adjustments, and stay motivated. Short-term goals often include acquiring new qualifications, mastering particular competencies, or securing a specific role, while long-term goals might encompass reaching executive positions, becoming industry experts, or launching entrepreneurial ventures.
Moreover, having well-defined career goals fosters a sense of purpose and direction, enhancing job satisfaction and overall productivity. It encourages continuous learning and adaptation, as professionals remain attuned to industry trends and evolving job market demands. Career goals also facilitate better time management and resource allocation, as individuals prioritize tasks and opportunities that advance their professional growth. In addition, articulating career goals can aid in networking and mentorship, as it allows individuals to communicate their aspirations clearly to potential mentors, colleagues, and employers, thereby opening doors to valuable guidance and support. Ultimately, career goals are integral to personal and professional development, driving individuals toward sustained success and fulfillment in their chosen fields.
This presentation by Yong Lim, Professor of Economic Law at Seoul National University School of Law, was made during the discussion “Artificial Intelligence, Data and Competition” held at the 143rd meeting of the OECD Competition Committee on 12 June 2024. More papers and presentations on the topic can be found at oe.cd/aicomp.
This presentation was uploaded with the author’s consent.
Artificial Intelligence, Data and Competition – LIM – June 2024 OECD discussion
Chpt 4 (presentation 2)
1. By : LIEW YONG HAO (07DEP15F1056)
CAROLINE SAMADAU (07DEP15F1087)
DEE6113 - CMOS IC DESIGN
PRESENTATION 2
2. Static CMOS logic
- The principle of static CMOS logic is the output is connected to ground through an n-
block and to VDD through a dual p-block
- Without changes of the inputs, this gate consumes only the leakage currents of some
transistors.
- When it is switching, it draws an additional current which is needed to charge and
discharge the internal capacitances and the load.
- Although the gate's logic function is ideally independent of the transistor channel
widths, they determine the dynamic behavior essentially: wider transistors will switch
a capacitive load faster, but they will also cause a larger input capacitance of the
gate.
- Unless otherwise noted, minimum-width and, of course, minimum-channel-length
transistors are assumed.
- For given capacitances the transistors' on-state current will limit the switching speed
of the gate and, consequently, the maximum clock frequency of a synchronous circuit
5. COMBINATIONAL LOGIC SEQUENTIAL LOGIC
- Circuits (or non-regenerative)
that have the property that at
any point in time, the output of
the circuit is related to its
current input signals by some
Boolean expression (assuming
that the transients through the
logic gates have settled).
- No intentional connection
between outputs and inputs is
present.
- Or regenerative circuits — the
output is not only a function of
the current input data, but also
of previous values of the input
signals
- This is accomplished by
connecting one or more outputs
intentionally back to some
inputs.
- Consequently, the circuit
“remembers” past events and
has a sense of history.
- A sequential circuit includes a
combinational logic portion and
a module that holds the state.