The document contains solutions to 20 example problems (labeled EX5.1 through EX5.20) relating to bipolar junction transistors. Each problem involves calculating various transistor parameters such as bias currents, voltages, and resistor values given information such as supply voltages, transistor betas, and resistor/collector resistor values. The problems cover topics such as calculating bias points, determining operating modes, and designing transistor circuits.
1) The document contains example problems from Chapter 6 of a textbook on exercise problems involving BJT circuit analysis.
2) Problem EX6.1 involves calculating currents, voltages, and gain for a common-emitter amplifier.
3) Problem EX6.12 involves calculating the bias resistor values needed to produce a specified quiescent current and voltage for a common-emitter amplifier.
This document contains solutions to problems from Chapter 11. Problem 11.1 solves for resistances in a common emitter amplifier circuit. Part c) finds the maximum and minimum voltages. Problem 11.2 calculates the common-mode gain of a differential amplifier as -0.01012. Problem 11.3a) solves for currents and voltages in a multi-emitter transistor. Part b) solves for currents when the collector voltage is changed.
This document contains solutions to problems involving BJT amplifier circuit analysis. Problem 6.1 calculates key transistor parameters like transconductance (gm) and output resistance (ro) for two common-emitter amplifiers. Problem 6.2 repeats this calculation for different bias currents. Subsequent problems analyze additional amplifier circuits, determining voltage gains and component values needed to meet specified conditions. Calculations involve setting up and solving equations relating bias currents, voltages, transistor parameters and circuit resistances.
This document provides solutions to example problems from Chapter 11 of an electronics textbook.
The problems cover topics such as: transistor biasing circuits, common emitter amplifier configurations, determining voltage and current values, and calculating resistor values needed for specific circuit behaviors. Detailed calculations are shown for each example problem to derive the requested values.
1) The document contains solved examples related to diode circuits and characteristics. It examines diode behavior in rectifier circuits, transfer characteristics, and modeling.
2) Key concepts covered include the voltage and current relationships of ideal and exponential diode models, as well as the small-signal resistance parameter rd.
3) Methods like iteration and exponential equations are used to solve for voltage and current in circuits containing single or multiple diodes.
Electronic devices and circuit theory 11th copyKitTrnTun5
This document contains significant equations and concepts related to electronic devices and circuits. Some key points include:
- Semiconductor diode equations including the relationship between voltage, current, and temperature.
- Bipolar junction transistor equations for current, voltage, power, and biasing configurations.
- Field effect transistor equations for current, voltage, power, and biasing configurations.
- Operational amplifier applications including inverting, non-inverting, summing amplifiers.
- Feedback and oscillator circuit concepts such as the Barkhausen criteria for oscillation.
The document contains the details of a final exam, including 10 questions on various topics in physics. The exam will take place on Tuesday, April 21st at 1:00 pm in room 300 Richards. The first question involves calculating currents, potential differences, and equivalent resistance in a multi-resistor circuit. The second question involves calculating magnetic field magnitudes and directions from current-carrying wires. The remaining questions cover additional topics such as capacitors, electromagnetic waves, sound waves, electric fields, and circuits.
1) The document contains example problems from Chapter 6 of a textbook on exercise problems involving BJT circuit analysis.
2) Problem EX6.1 involves calculating currents, voltages, and gain for a common-emitter amplifier.
3) Problem EX6.12 involves calculating the bias resistor values needed to produce a specified quiescent current and voltage for a common-emitter amplifier.
This document contains solutions to problems from Chapter 11. Problem 11.1 solves for resistances in a common emitter amplifier circuit. Part c) finds the maximum and minimum voltages. Problem 11.2 calculates the common-mode gain of a differential amplifier as -0.01012. Problem 11.3a) solves for currents and voltages in a multi-emitter transistor. Part b) solves for currents when the collector voltage is changed.
This document contains solutions to problems involving BJT amplifier circuit analysis. Problem 6.1 calculates key transistor parameters like transconductance (gm) and output resistance (ro) for two common-emitter amplifiers. Problem 6.2 repeats this calculation for different bias currents. Subsequent problems analyze additional amplifier circuits, determining voltage gains and component values needed to meet specified conditions. Calculations involve setting up and solving equations relating bias currents, voltages, transistor parameters and circuit resistances.
This document provides solutions to example problems from Chapter 11 of an electronics textbook.
The problems cover topics such as: transistor biasing circuits, common emitter amplifier configurations, determining voltage and current values, and calculating resistor values needed for specific circuit behaviors. Detailed calculations are shown for each example problem to derive the requested values.
1) The document contains solved examples related to diode circuits and characteristics. It examines diode behavior in rectifier circuits, transfer characteristics, and modeling.
2) Key concepts covered include the voltage and current relationships of ideal and exponential diode models, as well as the small-signal resistance parameter rd.
3) Methods like iteration and exponential equations are used to solve for voltage and current in circuits containing single or multiple diodes.
Electronic devices and circuit theory 11th copyKitTrnTun5
This document contains significant equations and concepts related to electronic devices and circuits. Some key points include:
- Semiconductor diode equations including the relationship between voltage, current, and temperature.
- Bipolar junction transistor equations for current, voltage, power, and biasing configurations.
- Field effect transistor equations for current, voltage, power, and biasing configurations.
- Operational amplifier applications including inverting, non-inverting, summing amplifiers.
- Feedback and oscillator circuit concepts such as the Barkhausen criteria for oscillation.
The document contains the details of a final exam, including 10 questions on various topics in physics. The exam will take place on Tuesday, April 21st at 1:00 pm in room 300 Richards. The first question involves calculating currents, potential differences, and equivalent resistance in a multi-resistor circuit. The second question involves calculating magnetic field magnitudes and directions from current-carrying wires. The remaining questions cover additional topics such as capacitors, electromagnetic waves, sound waves, electric fields, and circuits.
This document contains solutions to various circuit analysis problems. Problem 2.1 solves for the output voltage of a voltage divider circuit given input and resistor values. Problem 2.2 analyzes a circuit with a diode and calculates the output voltage as a function of the input voltage and diode characteristics. The remaining problems continue analyzing circuits involving resistors, diodes, capacitors and calculating values such as output voltage, current, power dissipation and more. Equations are provided and used to solve for unknown variables in each circuit.
This document contains solutions to exercises from Chapter 14. The solutions involve calculations for amplifier circuits using op amp specifications like gain bandwidth, input offset voltage, input bias current, slew rate, and more. Some key results include:
- The input offset voltage for a circuit is calculated as 1.27 mV.
- The input resistance of a voltage follower circuit with a large resistor is calculated as 5000 MΩ.
- The maximum frequency of a circuit before the gain drops by 3 dB is calculated as 20 kHz.
This document contains solutions to 10 exercises involving bipolar junction transistors and MOSFET circuits. The key points summarized are:
1) Exercise 10.1 calculates the reference and base currents in a BJT circuit. Exercise 10.2 calculates the reference current, zero bias current, and small signal output resistance.
2) Exercise 10.3 calculates the various currents in a multi-emitter BJT. Exercise 10.4 calculates the early effect resistance and voltage difference between two BJTs.
3) Exercise 10.5 again calculates reference current and zero bias current. Exercises 10.6 through 10.11 involve various MOSFET and BJT circuit calculations.
This document contains solutions to problems related to MOSFET circuits. Section 16.1 calculates threshold voltage shift for an n-channel MOSFET under different gate-source voltages. Section 16.2 determines transistor parameters from output characteristics. Section 16.3 finds the transistor operating point for a different load resistance. Sections 16.4 through 16.9 solve additional problems involving MOSFET biasing, power calculations, and logic gate output voltages.
This document contains solutions to exercises from Chapter 8. The summaries are:
1) The first exercise calculates the maximum power transfer for a common emitter amplifier circuit under different voltage supply conditions.
2) The second exercise calculates temperature increases for different components in a circuit based on power dissipation.
3) The third exercise similarly calculates temperature rises for different components based on known power and thermal resistances.
This document contains solutions to examples from Chapter 12 of an exercise book. It includes 12 examples covering topics like:
1) Calculating voltage gain, input resistance, and output resistance of non-inverting op-amps.
2) Analyzing the bandwidth, voltage gain, and input/output resistances of inverting op-amps.
3) Determining the voltage transfer characteristics, transconductance, and voltage gain of BJT common emitter amplifiers.
The examples provide step-by-step workings and calculations to arrive at the key parameters and specifications for different amplifier circuit configurations.
This document contains solutions to problems from Chapter 9. It provides worked examples of calculating voltages and currents in circuits containing operational amplifiers. Key steps and results are shown for multiple circuit configurations, including calculating voltage gains, identifying resistor values, and determining output voltages and currents given input signals. Operational amplifier circuits with one, two and multiple stages are analyzed using relevant equations.
The document contains solutions to example problems from Chapter 17 of an exercise book. Problem EX17.1 involves calculating currents in a circuit with a voltage source and two resistors. Part a calculates the currents with different input voltages. Part b calculates the node voltages. EX17.2 calculates power dissipation for a logic gate circuit with different input voltages.
The document provides solutions to various problems involving the analysis and design of transistor amplifiers and power supplies. It examines concepts such as maximum power transfer, voltage gain, efficiency, heat dissipation, and voltage/current characteristics. Diagrams and calculations are presented to determine operating voltages and currents, power outputs, temperature rises, and efficiency for different circuit configurations under varying conditions.
1) This document provides solutions to problems involving bipolar junction transistors. It analyzes various circuit configurations to determine values like current, voltage, and resistance.
2) Key steps involve writing equations for the relationships between currents, applying Kirchhoff's laws, and solving the equations simultaneously to find the unknown values.
3) The analysis considers factors like the effect of beta on collector and base currents, and how resistance values must be set for desired output currents and voltages.
This document contains solutions to exercises from Chapter 4. The summaries are:
1) Exercise 4.1 calculates the transconductance (gm) and output resistance (ro) for a MOSFET with given parameters.
2) Exercise 4.2 calculates the voltage gain (Av) of a common-source amplifier using the gm from Exercise 4.1.
3) Exercise 4.3 calculates various voltage and current values for a common-source amplifier using given resistor values. It also calculates the voltage gain (Av) of the amplifier.
This document contains solutions to 15 exercises related to circuit analysis. The exercises calculate values like capacitance, resistance, cutoff frequency, and gain based on given circuit diagrams and specifications. Equations are set up and solved to find the desired values. For example, exercise 1 calculates the capacitance needed for a given RC circuit to have a cutoff frequency of 40 kHz. The solutions proceed methodically through each problem, showing the work to arrive at the final answers.
Новый IT для нового enterprise / Александр Титов (Экспресс 42)Ontico
Мир меняется, и корпорации меняются следом за миром. GE собирается зарабатывать на данных и создает консорциумы, банки спят и видят обузданный ими блокчейн, Microsoft добавляет Docker в свою операционную систему.
Что же происходит, какие закономерности стоят за этими событиями? Почему web стал ближе к enterprise, и как enterprise догнать web?
В этом докладе я попробую рассказать, как начать строить новый IT в рамках старого enterprise, как при этом надо действовать. Каких ошибок можно избежать, какие новые возможности вы получите.
Доклад основан на 7-летнем опыте внедрения DevOps практик и технологий в компаниях разного размера.
Мобильное приложение как способ изменить корпоративный мир / Андрей Тимербаев...Ontico
Воплощение идеи сервисной архитектуры и применение web scale подходов начались с разработки Мобильного приложения Почты России. Казалось бы, задача была несложной, но мы сразу натолкнулись на проблемы существующей корпоративной архитектуры. Данные, необходимые приложению, в организации были, но ими было не воспользоваться так, как этого хотелось.
Чтобы достичь быстрого результата, мы делали промежуточные решения — собственные сервисы с копиями мастер-данных. Кроме того, пришлось кэшировать данные из legacy-систем, которые не могли обеспечить требуемые время ответа, доступность, устойчивость к нагрузке.
Промежуточные решения развивались, улучшались с точки зрения универсальности и надежности и постепенно заняли центральное место в сегодняшнем IT-ландшафте организации. К ним относятся новый сервис отслеживания почтовых отправлений и корпоративная шина данных.
В итоге разработка Мобильного приложения завершилась не только появлением полезного продукта, который работает на улучшение имиджа Почты России в глазах пользователей. Не менее важные для нас результаты — это технологический сдвиг в корпоративной архитектуре организации и изменение в подходах наших коллег, которые также делают новые сервисы.
Agile в кровавом энтерпрайзе / Асхат Уразбаев (ScrumTrek)Ontico
В “классическом” энтепрайзе правят водопадные процессы. Это позволяет снизить затраты на старт новых проектов, но сильно ухудшает время Time to market. Переход на гибкие методологии позволяет это время значительно улучшить. Это очень не просто. Каждая команда разработки страдает от большого количества зависимостей. И в большой организации таких зависимостей настолько много, что представленный самому себе Agile в такой команде через какое-то время может и помереть. Перестраивать организацию процессов приходится полностью, сверху донизу.
Мы поговорим про специфику внедрения Agile в крупной организации, сравнив две компании — типичную крупную веб-компанию и классический “кровавый энтепрайз”.
Быстрое прототипирование бэкенда игры с геолокацией на OpenResty, Redis и Doc...Ontico
Докладчик разберёт кейс быстрой разработки небольшого прототипа серверной части мобильной игры с геолокацией на стеке nginx, OpenResty (Lua), Redis и Docker. Вы услышите о том, почему был выбран такой стек, о его преимуществах (и некоторых недостатках), о том, как прототип устроен внутри, о том, как именно особенности стека были использованы для того, чтобы реализовать задуманное. Не будет обойден стороной вопрос о том, как максимально быстро собрать прототип и быстро итерироваться по нему, но при этом удержаться в золотой середине между Сциллой макаронной копипасты и Харибдой кристаллического перфекционизма. Немного времени будет уделено и рассказу о том, как можно превратить такой прототип в продакшен-систему.
This document contains solutions to problems involving BJT circuit analysis. Key points include:
1) Problem 5.1 analyzes two common emitter amplifier circuits and calculates currents and voltages.
2) Problem 5.2 calculates alpha and collector current values for two common emitter circuits with different beta values.
3) The remaining problems involve calculating various parameter values like currents, voltages, and gains for additional common emitter, common base, and common collector BJT circuits. Circuit analysis methods like Kirchhoff's laws and transistor biasing equations are applied.
4) Graphs and calculations of operating points are presented for some circuits. Effects of component value variations are considered, such as the impact on collector
This document contains solutions to problems in Chapter 13 regarding computer simulations and analyses of bipolar junction transistor circuits. The key points summarized are:
1) Problem 13.1 provides a computer simulation of a circuit and calculates the overall gain as -1.59x106.
2) Problem 13.6 calculates various currents in a BJT reference circuit, including the reference current of 0.5 mA and collector current of 21.1 μA.
3) Problem 13.8 calculates currents in another BJT reference circuit, including the reference current of 0.22 mA, collector current of 14.2 μA, and other node currents.
This document contains the solutions to various exercises related to circuit analysis and electronics. Exercise problems cover topics such as diode circuits, rectifiers, filters, and transistor circuits. The solutions involve calculating voltages, currents, power, capacitance values, and other circuit parameters through applying circuit laws and relationships. PSpice simulations are also used to verify some of the circuit responses.
This document contains the solutions to exercises from Chapter 16. The first exercise solves for the threshold voltage (VTN) of a NMOS transistor. The second exercise calculates the output voltage and current of a common source amplifier. The third exercise analyzes the output characteristics of an inverter. The remaining exercises involve additional circuit analysis problems related to topics in Chapter 16 such as CMOS inverters, logic gates and power calculations.
This document contains solutions to exercises from Chapter 13. The solutions involve calculating various currents and voltages in BJT amplifier circuits. Equations are provided and values are calculated for currents, voltages, gains, and other circuit parameters. Detailed steps are shown for each calculation.
This document contains solutions to various circuit analysis problems. Problem 2.1 solves for the output voltage of a voltage divider circuit given input and resistor values. Problem 2.2 analyzes a circuit with a diode and calculates the output voltage as a function of the input voltage and diode characteristics. The remaining problems continue analyzing circuits involving resistors, diodes, capacitors and calculating values such as output voltage, current, power dissipation and more. Equations are provided and used to solve for unknown variables in each circuit.
This document contains solutions to exercises from Chapter 14. The solutions involve calculations for amplifier circuits using op amp specifications like gain bandwidth, input offset voltage, input bias current, slew rate, and more. Some key results include:
- The input offset voltage for a circuit is calculated as 1.27 mV.
- The input resistance of a voltage follower circuit with a large resistor is calculated as 5000 MΩ.
- The maximum frequency of a circuit before the gain drops by 3 dB is calculated as 20 kHz.
This document contains solutions to 10 exercises involving bipolar junction transistors and MOSFET circuits. The key points summarized are:
1) Exercise 10.1 calculates the reference and base currents in a BJT circuit. Exercise 10.2 calculates the reference current, zero bias current, and small signal output resistance.
2) Exercise 10.3 calculates the various currents in a multi-emitter BJT. Exercise 10.4 calculates the early effect resistance and voltage difference between two BJTs.
3) Exercise 10.5 again calculates reference current and zero bias current. Exercises 10.6 through 10.11 involve various MOSFET and BJT circuit calculations.
This document contains solutions to problems related to MOSFET circuits. Section 16.1 calculates threshold voltage shift for an n-channel MOSFET under different gate-source voltages. Section 16.2 determines transistor parameters from output characteristics. Section 16.3 finds the transistor operating point for a different load resistance. Sections 16.4 through 16.9 solve additional problems involving MOSFET biasing, power calculations, and logic gate output voltages.
This document contains solutions to exercises from Chapter 8. The summaries are:
1) The first exercise calculates the maximum power transfer for a common emitter amplifier circuit under different voltage supply conditions.
2) The second exercise calculates temperature increases for different components in a circuit based on power dissipation.
3) The third exercise similarly calculates temperature rises for different components based on known power and thermal resistances.
This document contains solutions to examples from Chapter 12 of an exercise book. It includes 12 examples covering topics like:
1) Calculating voltage gain, input resistance, and output resistance of non-inverting op-amps.
2) Analyzing the bandwidth, voltage gain, and input/output resistances of inverting op-amps.
3) Determining the voltage transfer characteristics, transconductance, and voltage gain of BJT common emitter amplifiers.
The examples provide step-by-step workings and calculations to arrive at the key parameters and specifications for different amplifier circuit configurations.
This document contains solutions to problems from Chapter 9. It provides worked examples of calculating voltages and currents in circuits containing operational amplifiers. Key steps and results are shown for multiple circuit configurations, including calculating voltage gains, identifying resistor values, and determining output voltages and currents given input signals. Operational amplifier circuits with one, two and multiple stages are analyzed using relevant equations.
The document contains solutions to example problems from Chapter 17 of an exercise book. Problem EX17.1 involves calculating currents in a circuit with a voltage source and two resistors. Part a calculates the currents with different input voltages. Part b calculates the node voltages. EX17.2 calculates power dissipation for a logic gate circuit with different input voltages.
The document provides solutions to various problems involving the analysis and design of transistor amplifiers and power supplies. It examines concepts such as maximum power transfer, voltage gain, efficiency, heat dissipation, and voltage/current characteristics. Diagrams and calculations are presented to determine operating voltages and currents, power outputs, temperature rises, and efficiency for different circuit configurations under varying conditions.
1) This document provides solutions to problems involving bipolar junction transistors. It analyzes various circuit configurations to determine values like current, voltage, and resistance.
2) Key steps involve writing equations for the relationships between currents, applying Kirchhoff's laws, and solving the equations simultaneously to find the unknown values.
3) The analysis considers factors like the effect of beta on collector and base currents, and how resistance values must be set for desired output currents and voltages.
This document contains solutions to exercises from Chapter 4. The summaries are:
1) Exercise 4.1 calculates the transconductance (gm) and output resistance (ro) for a MOSFET with given parameters.
2) Exercise 4.2 calculates the voltage gain (Av) of a common-source amplifier using the gm from Exercise 4.1.
3) Exercise 4.3 calculates various voltage and current values for a common-source amplifier using given resistor values. It also calculates the voltage gain (Av) of the amplifier.
This document contains solutions to 15 exercises related to circuit analysis. The exercises calculate values like capacitance, resistance, cutoff frequency, and gain based on given circuit diagrams and specifications. Equations are set up and solved to find the desired values. For example, exercise 1 calculates the capacitance needed for a given RC circuit to have a cutoff frequency of 40 kHz. The solutions proceed methodically through each problem, showing the work to arrive at the final answers.
Новый IT для нового enterprise / Александр Титов (Экспресс 42)Ontico
Мир меняется, и корпорации меняются следом за миром. GE собирается зарабатывать на данных и создает консорциумы, банки спят и видят обузданный ими блокчейн, Microsoft добавляет Docker в свою операционную систему.
Что же происходит, какие закономерности стоят за этими событиями? Почему web стал ближе к enterprise, и как enterprise догнать web?
В этом докладе я попробую рассказать, как начать строить новый IT в рамках старого enterprise, как при этом надо действовать. Каких ошибок можно избежать, какие новые возможности вы получите.
Доклад основан на 7-летнем опыте внедрения DevOps практик и технологий в компаниях разного размера.
Мобильное приложение как способ изменить корпоративный мир / Андрей Тимербаев...Ontico
Воплощение идеи сервисной архитектуры и применение web scale подходов начались с разработки Мобильного приложения Почты России. Казалось бы, задача была несложной, но мы сразу натолкнулись на проблемы существующей корпоративной архитектуры. Данные, необходимые приложению, в организации были, но ими было не воспользоваться так, как этого хотелось.
Чтобы достичь быстрого результата, мы делали промежуточные решения — собственные сервисы с копиями мастер-данных. Кроме того, пришлось кэшировать данные из legacy-систем, которые не могли обеспечить требуемые время ответа, доступность, устойчивость к нагрузке.
Промежуточные решения развивались, улучшались с точки зрения универсальности и надежности и постепенно заняли центральное место в сегодняшнем IT-ландшафте организации. К ним относятся новый сервис отслеживания почтовых отправлений и корпоративная шина данных.
В итоге разработка Мобильного приложения завершилась не только появлением полезного продукта, который работает на улучшение имиджа Почты России в глазах пользователей. Не менее важные для нас результаты — это технологический сдвиг в корпоративной архитектуре организации и изменение в подходах наших коллег, которые также делают новые сервисы.
Agile в кровавом энтерпрайзе / Асхат Уразбаев (ScrumTrek)Ontico
В “классическом” энтепрайзе правят водопадные процессы. Это позволяет снизить затраты на старт новых проектов, но сильно ухудшает время Time to market. Переход на гибкие методологии позволяет это время значительно улучшить. Это очень не просто. Каждая команда разработки страдает от большого количества зависимостей. И в большой организации таких зависимостей настолько много, что представленный самому себе Agile в такой команде через какое-то время может и помереть. Перестраивать организацию процессов приходится полностью, сверху донизу.
Мы поговорим про специфику внедрения Agile в крупной организации, сравнив две компании — типичную крупную веб-компанию и классический “кровавый энтепрайз”.
Быстрое прототипирование бэкенда игры с геолокацией на OpenResty, Redis и Doc...Ontico
Докладчик разберёт кейс быстрой разработки небольшого прототипа серверной части мобильной игры с геолокацией на стеке nginx, OpenResty (Lua), Redis и Docker. Вы услышите о том, почему был выбран такой стек, о его преимуществах (и некоторых недостатках), о том, как прототип устроен внутри, о том, как именно особенности стека были использованы для того, чтобы реализовать задуманное. Не будет обойден стороной вопрос о том, как максимально быстро собрать прототип и быстро итерироваться по нему, но при этом удержаться в золотой середине между Сциллой макаронной копипасты и Харибдой кристаллического перфекционизма. Немного времени будет уделено и рассказу о том, как можно превратить такой прототип в продакшен-систему.
This document contains solutions to problems involving BJT circuit analysis. Key points include:
1) Problem 5.1 analyzes two common emitter amplifier circuits and calculates currents and voltages.
2) Problem 5.2 calculates alpha and collector current values for two common emitter circuits with different beta values.
3) The remaining problems involve calculating various parameter values like currents, voltages, and gains for additional common emitter, common base, and common collector BJT circuits. Circuit analysis methods like Kirchhoff's laws and transistor biasing equations are applied.
4) Graphs and calculations of operating points are presented for some circuits. Effects of component value variations are considered, such as the impact on collector
This document contains solutions to problems in Chapter 13 regarding computer simulations and analyses of bipolar junction transistor circuits. The key points summarized are:
1) Problem 13.1 provides a computer simulation of a circuit and calculates the overall gain as -1.59x106.
2) Problem 13.6 calculates various currents in a BJT reference circuit, including the reference current of 0.5 mA and collector current of 21.1 μA.
3) Problem 13.8 calculates currents in another BJT reference circuit, including the reference current of 0.22 mA, collector current of 14.2 μA, and other node currents.
This document contains the solutions to various exercises related to circuit analysis and electronics. Exercise problems cover topics such as diode circuits, rectifiers, filters, and transistor circuits. The solutions involve calculating voltages, currents, power, capacitance values, and other circuit parameters through applying circuit laws and relationships. PSpice simulations are also used to verify some of the circuit responses.
This document contains the solutions to exercises from Chapter 16. The first exercise solves for the threshold voltage (VTN) of a NMOS transistor. The second exercise calculates the output voltage and current of a common source amplifier. The third exercise analyzes the output characteristics of an inverter. The remaining exercises involve additional circuit analysis problems related to topics in Chapter 16 such as CMOS inverters, logic gates and power calculations.
This document contains solutions to exercises from Chapter 13. The solutions involve calculating various currents and voltages in BJT amplifier circuits. Equations are provided and values are calculated for currents, voltages, gains, and other circuit parameters. Detailed steps are shown for each calculation.
This document describes the common collector (CC) amplifier circuit, also known as an emitter follower. It provides the key equations for analyzing the CC amplifier, including expressions for output voltage, current, gain, input and output impedances. It also discusses the Darlington amplifier and series regulator circuits. The key points are:
- The CC amplifier has a voltage gain approximately equal to 1 and a high input impedance and low output impedance.
- Gain, input and output impedances depend on factors like the transistor's beta and the resistor values.
- The Darlington amplifier has an extremely high input impedance due to its double beta gain stage.
- A series regulator provides a stable output
The document contains solutions to example problems from Chapter 9 of an exercise book.
The examples calculate resistor values for circuits involving operational amplifiers to achieve specified voltage gains, current values, and time constants. Computer analysis examples also calculate output voltages and currents for various input conditions in operational amplifier circuits.
Electic circuits fundamentals thomas floyd, david buchla 8th edition명중 김
This document provides solutions to end-of-chapter problems from a textbook on quantities and units. The solutions cover topics in scientific notation, engineering notation, metric prefixes, and unit conversions. Specifically, it provides step-by-step workings and answers to over two dozen problems across multiple sections of Chapter 1.
Electic circuits fundamentals thomas floyd, david buchla 8th edition명중 김
This document provides solutions to end-of-chapter problems from a textbook on quantities and units. The solutions cover topics in scientific notation, engineering notation, metric prefixes, and unit conversions. Specifically, it provides step-by-step workings and answers to over two dozen problems across multiple sections of Chapter 1.
The document contains 14 exercise problems related to analyzing bias points of transistors. Problem 1 asks to find the bias point of a transistor with β = 100 and VA → ∞. Problem 4 asks to find the bias point of a transistor with β = 200 and VA → ∞. Problem 6 asks to find the bias point of a transistor, determine the Thevenin equivalent of the voltage divider, and that the base voltage must be large enough to forward bias the BE junction.
This document contains solved problems related to electronic devices such as transistors, diodes, and semiconductors. It includes 9 problems solved step-by-step relating to semiconductor properties and diode circuits. The problems calculate values such as intrinsic field, resistivity, drift velocity, current, activation voltages, and diode currents in various circuits using given component values and semiconductor parameters.
The document provides specifications and characteristics for the 2N918 NPN silicon high frequency transistor. Key details include:
- It is designed for high frequency, low noise amplifier and oscillator applications.
- Maximum ratings include a collector current of 50mA, collector-emitter voltage of 15V, and power dissipation of 300mW at 25°C or 200mW at 150°C.
- Package style is TO-72 and the transistor has an emitter, base, collector and case.
This document discusses Bipolar Junction Transistors (BJTs) and their operating regions. It describes the basic components and operation of NPN and PNP BJTs. The three main operating regions for BJTs are discussed: active, cutoff, and saturation regions. Equations for calculating operating points in the active region are provided. The document also discusses biasing techniques, including using a four-resistor network to provide stable biasing and prevent variations in the operating point due to changes in transistor characteristics. An example calculation of bias points is included.
Livro Hibbeler - 7ª ed Resistencia Materiais (soluções).pdfTomCosta18
The document contains 10 problems involving the determination of internal forces (normal forces, shear forces, bending moments) in structural members. Problem 1-10 asks the reader to determine the internal forces on the cross section through point C of a beam supporting a distributed load. The beam is simply supported at points A and B. Reactions at A and B are assumed to be vertical. Equations for the support reactions are written in terms of the distributed load magnitudes and beam dimensions.
The document provides structural analysis problems involving the application of equations of equilibrium to determine internal forces in beams, shafts, and frames under various loading conditions. Diagrams and given values are provided for each problem.
William hyatt-7th-edition-drill-problems-solutionSalman Salman
This document contains solutions to drill problems from Chapter 2 on electrostatics. It includes calculations of electric fields, electric flux densities, and total charge for various charge distributions using Gauss's law and other concepts of electrostatics. Any errors found in the solutions should be reported to the author.
Bjt region of operation |Dept of ECE |ANITSANILPRASAD58
This document discusses the region of operation of a bipolar junction transistor (BJT). It defines the cutoff, active, and saturation regions based on the voltage differences between the base, collector, and emitter terminals. It also provides two methods for determining the region of operation: 1) assume active region and check consistency, or 2) assume saturation and use |VBE|=0.7V and |VCE|=0.2V. The document then gives examples of problems calculating node voltages and currents in BJT circuits in the active and saturation regions.
Capítulo 07 falha por fadiga resultante de carregamento variávelJhayson Carvalho
The document provides calculations and solutions to example problems related to fatigue design and analysis. It includes determining endurance limits, fatigue stress concentrations, Goodman diagrams, and calculating fatigue life. Key equations from chapters 3, 7, 8, and the appendix are applied to examples involving shafts, beams, and other mechanical components made from various steel alloys. Material properties, load conditions, and geometric factors are considered to iteratively size components and check designs for sufficient fatigue life.
Original PNP Transistor BC557C C557C 557 TO-92 NewAUTHELECTRONIC
This document provides specifications for PNP silicon amplifier transistors, models BC556B, BC557A/B/C, and BC558B. It includes maximum ratings, electrical characteristics, thermal characteristics, and ordering information. The maximum ratings section outlines voltage and current limits. The electrical characteristics section provides typical values for parameters like current gain, saturation and on voltages, bandwidth, and more. Graphs illustrate characteristics like gain vs. current and capacitance vs. voltage. Thermal characteristics include junction temperature range and thermal resistances. The ordering information lists available package and shipping options.
Original PNP Transistor BC556BG 556B BC556B BC556 556 TO-92 NewAUTHELECTRONIC
This document provides specifications for PNP silicon amplifier transistors, models BC556B, BC557A/B/C, and BC558B. It includes maximum ratings, electrical characteristics, thermal characteristics, and ordering information. The maximum ratings section outlines voltage and current limits. The electrical characteristics section provides typical values for parameters like current gain, saturation and on voltages, bandwidth, and capacitances at different operating conditions. Graphs illustrate characteristics like gain and safe operating area. The document also provides thermal resistance specifications and ordering options by package type.
Rameysoft-ftp client server, and others+Bilal Sarwar
Ramey Soft provides software consulting services to assist clients with software design, strategy, tools, and processes in order to ensure project and product success. Their expertise includes web services, database design, web development, management systems, desktop and Android application development, and programming languages such as Java, ASP.net, C/C++, PHP, C#, SQL, and MySQL. They also provide counseling for graduate and post-graduate projects and aim to transform data into knowledge to help clients solve problems and better serve customers. Contact details are provided for Skype, email, and phone numbers.
Ramey Soft provides software consulting services to assist clients with software design, strategy, tools, and processes in order to ensure project and product success. Their services go beyond just coding to transform data into knowledge and help clients solve problems and better serve customers. They offer expertise in web services, database design, web development, management systems, desktop and Android application development, and programming languages like Java, ASP.net, C/C++, PHP, C#, SQL, and MySQL.
Ramey Soft provides software consulting services to assist clients with software design, strategy, tools, and processes in order to ensure project and product success. Their expertise includes web services, database design, web and desktop application development, and management systems for various industries. They also provide counseling for graduate and post-graduate projects, with the goal of transforming data into knowledge to help clients solve problems and better serve customers. Ramey Soft can be contacted via email, Skype, or phone for web development, database design, and application development services in languages like Java, ASP.NET, C/C++, PHP, C#, and technologies like SQL, MySQL, and graphics.
This document contains solutions to problems from Chapter 15. It provides detailed calculations and examples for various circuit analysis problems involving filters. Some key points:
- It calculates transfer functions, corner frequencies, and component values for low-pass filters, high-pass filters, and bandpass filters.
- It determines the number of poles needed in a filter to achieve a given attenuation level.
- It analyzes the transfer function of a maximally flat high-pass filter and derives the relationship between component values.
- It provides an example of designing a circuit to meet given low-frequency and high-frequency gain specifications using an op-amp.
The document demonstrates analytical techniques for analyzing and designing passive filter
This document contains solutions to problems from Chapter 14. Problem 14.1 calculates the maximum and rms input voltages for a circuit. Problem 14.2 calculates output current and minimum load resistance. Problem 14.3 lists voltage values for another circuit. Problem 14.4 calculates closed-loop gain. The remaining problems involve calculating various voltage and current values, closed-loop gains, and input and feedback resistances for multiple stage amplifier circuits using provided equations. Lengthy calculations are shown for some problems.
This document contains solutions to problems from Chapter 12. It provides detailed calculations and explanations for problems involving feedback amplifiers, frequency response, input and output impedances, and circuit configurations. Key points addressed include:
- Calculating voltage gain, feedback factor, and input/output impedances for various amplifier circuits.
- Deriving frequency response expressions and bandwidth calculations.
- Determining circuit types based on input/output impedance characteristics.
- Solving for voltage and current variables in feedback amplifier circuits.
This document summarizes solutions to problems involving circuit analysis using Laplace transforms.
1) The first problem analyzes a simple RC circuit and calculates the transfer function, cutoff frequency, and output response to a step input.
2) The second problem analyzes a similar RC circuit with different component values and calculates the transfer function and cutoff frequency.
3) Additional circuit examples are provided involving resistors, capacitors, and inductors. Transfer functions are derived and cutoff frequencies are calculated.
4) A multiple time constant circuit is analyzed and its frequency response is characterized.
5) Circuits involving operational amplifiers are analyzed to derive transfer functions and calculate bandwidth parameters.
This document contains solutions to exercises from Chapter 7. The exercises involve analyzing RC circuits, operational amplifiers, and transistors. The solutions calculate values like capacitance, frequency response, gain, and bias points by setting up and solving equations that model the circuit behavior. Circuit diagrams are included with some of the solutions. The exercises cover topics like low-pass filters, amplifiers, and basic transistor circuits.
1) The document contains examples of calculations for MOSFET circuit analysis, including determining operating point values like I_D, V_GS, and g_m.
2) Equations are provided and used to solve for transistor parameters like threshold voltage, transconductance, and output resistance.
3) Circuit examples include common source, common gate, and common drain configurations to determine voltage gain and output resistance.
This document provides solutions to problems involving MOSFET circuit analysis, calculating current (ID) and other parameters using equations that relate gate voltage (VGS), drain voltage (VDS), threshold voltage (VT), and transconductance (Kn or Kp) for n-channel or p-channel MOSFETs. Various regions of operation are considered including saturation, cut-off, and non-saturation. Worked examples calculate ID for different bias conditions and device parameters such as width (W) and length (L).
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Sara Saffari: Turning Underweight into Fitness Success at 23get joys
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Leonardo DiCaprio Super Bowl: Hollywood Meets America’s Favorite Gamegreendigital
Introduction
Leonardo DiCaprio is synonymous with Hollywood stardom and acclaimed performances. has a unique connection with one of America's most beloved sports events—the Super Bowl. The "Leonardo DiCaprio Super Bowl" phenomenon combines the worlds of cinema and sports. drawing attention from fans of both domains. This article delves into the multifaceted relationship between DiCaprio and the Super Bowl. exploring his appearances at the event, His involvement in Super Bowl advertisements. and his cultural impact that bridges the gap between these two massive entertainment industries.
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Leonardo DiCaprio: The Hollywood Icon
Early Life and Career Beginnings
Leonardo Wilhelm DiCaprio was born in Los Angeles, California, on November 11, 1974. His journey to stardom began at a young age with roles in television commercials and educational programs. DiCaprio's breakthrough came with his portrayal of Luke Brower in the sitcom "Growing Pains" and later as Tobias Wolff in "This Boy's Life" (1993). where he starred alongside Robert De Niro.
Rise to Stardom
DiCaprio's career skyrocketed with his performance in "What's Eating Gilbert Grape" (1993). earning him his first Academy Award nomination. He continued to gain acclaim with roles in "Romeo + Juliet" (1996) and "Titanic" (1997). the latter of which cemented his status as a global superstar. Over the years, DiCaprio has showcased his versatility in films like "The Aviator" (2004). "Start" (2010), and "The Revenant" (2015), for which he finally won an Academy Award for Best Actor.
Environmental Activism
Beyond his film career, DiCaprio is also renowned for his environmental activism. He established the Leonardo DiCaprio Foundation in 1998, focusing on global conservation efforts. His commitment to ecological issues often intersects with his public appearances. including those related to the Super Bowl.
The Super Bowl: An American Institution
History and Significance
The Super Bowl is the National Football League (NFL) championship game. is one of the most-watched sporting events in the world. First played in 1967, the Super Bowl has evolved into a cultural phenomenon. featuring high-profile halftime shows, memorable advertisements, and significant media coverage. The event attracts a diverse audience, from avid sports fans to casual viewers. making it a prime platform for celebrities to appear.
Entertainment and Advertisements
The Super Bowl is not only about football but also about entertainment. The halftime show features performances by some of the biggest names in the music industry. while the commercials are often as anticipated as the game itself. Companies invest millions in Super Bowl ads. creating iconic and sometimes controversial commercials that capture public attention.
Leonardo DiCaprio's Super Bowl Appearances
A Celebrity Among the Fans
Leonardo DiCaprio's presence at the Super Bowl has noted several times. As a high-profile celebrity. DiCaprio attracts
Tom Cruise Daughter: An Insight into the Life of Suri Cruisegreendigital
Tom Cruise is a name that resonates with global audiences for his iconic roles in blockbuster films and his dynamic presence in Hollywood. But, beyond his illustrious career, Tom Cruise's personal life. especially his relationship with his daughter has been a subject of public fascination and media scrutiny. This article delves deep into the life of Tom Cruise daughter, Suri Cruise. Exploring her upbringing, the influence of her parents, and her current life.
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Introduction: The Fame Surrounding Tom Cruise Daughter
Suri Cruise, the daughter of Tom Cruise and Katie Holmes, has been in the public eye since her birth on April 18, 2006. Thanks to the media's relentless coverage, the world watched her grow up. As the daughter of one of Hollywood's most renowned actors. Suri has had a unique upbringing marked by privilege and scrutiny. This article aims to provide a comprehensive overview of Suri Cruise's life. Her relationship with her parents, and her journey so far.
Early Life of Tom Cruise Daughter
Birth and Immediate Fame
Suri Cruise was born in Santa Monica, California. and from the moment she came into the world, she was thrust into the limelight. Her parents, Tom Cruise and Katie Holmes. Were one of Hollywood's most talked-about couples at the time. The birth of their daughter was a anticipated event. and Suri's first public appearance in Vanity Fair magazine set the tone for her life in the public eye.
The Impact of Celebrity Parents
Having celebrity parents like Tom Cruise and Katie Holmes comes with its own set of challenges and privileges. Suri Cruise's early life marked by a whirlwind of media attention. paparazzi, and public interest. Despite the constant spotlight. Her parents tried to provide her with an upbringing that was as normal as possible.
The Influence of Tom Cruise and Katie Holmes
Tom Cruise's Parenting Style
Tom Cruise known for his dedication and passion in both his professional and personal life. As a father, Cruise has described as loving and protective. His involvement in the Church of Scientology, but, has been a point of contention and has influenced his relationship with Suri. Cruise's commitment to Scientology has reported to be a significant factor in his and Holmes' divorce and his limited public interactions with Suri.
Katie Holmes' Role in Suri's Life
Katie Holmes has been Suri's primary caregiver since her separation from Tom Cruise in 2012. Holmes has provided a stable and grounded environment for her daughter. She moved to New York City with Suri to start a new chapter in their lives away from the intense scrutiny of Hollywood.
Suri Cruise: Growing Up in the Spotlight
Media Attention and Public Interest
From stylish outfits to everyday activities. Suri Cruise has been a favorite subject for tabloids and entertainment news. The constant media attention has shaped her childhood. Despite this, Suri has managed to maintain a level of normalcy, thanks to her mother's efforts.
Leonardo DiCaprio House: A Journey Through His Extravagant Real Estate Portfoliogreendigital
Introduction
Leonardo DiCaprio, A name synonymous with Hollywood excellence. is not only known for his stellar acting career but also for his impressive real estate investments. The "Leonardo DiCaprio house" is a topic that piques the interest of many. as the Oscar-winning actor has amassed a diverse portfolio of luxurious properties. DiCaprio's homes reflect his varied tastes and commitment to sustainability. from retreats to historic mansions. This article will delve into the fascinating world of Leonardo DiCaprio's real estate. Exploring the details of his most notable residences. and the unique aspects that make them stand out.
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Leonardo DiCaprio House: Malibu Beachfront Retreat
A Prime Location
His Malibu beachfront house is one of the most famous properties in Leonardo DiCaprio's real estate portfolio. Situated in the exclusive Carbon Beach. also known as "Billionaire's Beach," this property boasts stunning ocean views and private beach access. The "Leonardo DiCaprio house" in Malibu is a testament to the actor's love for the sea and his penchant for luxurious living.
Architectural Highlights
The Malibu house features a modern design with clean lines, large windows. and open spaces blending indoor and outdoor living. The expansive deck and patio areas provide ample space for entertaining guests or enjoying a quiet sunset. The house has state-of-the-art amenities. including a gourmet kitchen, a home theatre, and many guest suites.
Sustainable Features
Leonardo DiCaprio is a well-known environmental activist. whose Malibu house reflects his commitment to sustainability. The property incorporates solar panels, energy-efficient appliances, and sustainable building materials. The landscaping around the house is also designed to be water-efficient. featuring drought-resistant plants and intelligent irrigation systems.
Leonardo DiCaprio House: Hollywood Hills Hideaway
Privacy and Seclusion
Another remarkable property in Leonardo DiCaprio's collection is his Hollywood Hills house. This secluded retreat offers privacy and tranquility. making it an ideal escape from the hustle and bustle of Los Angeles. The "Leonardo DiCaprio house" in Hollywood Hills nestled among lush greenery. and offers panoramic views of the city and surrounding landscapes.
Design and Amenities
The Hollywood Hills house is a mid-century modern gem characterized by its sleek design and floor-to-ceiling windows. The open-concept living space is perfect for entertaining. while the cozy bedrooms provide a comfortable retreat. The property also features a swimming pool, and outdoor dining area. and a spacious deck that overlooks the cityscape.
Environmental Initiatives
The Hollywood Hills house incorporates several green features that are in line with DiCaprio's environmental values. The home has solar panels, energy-efficient lighting, and a rainwater harvesting system. Additionally, the landscaping designed to support local wildlife and promote
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Brian Peck Leonardo DiCaprio: A Unique Intersection of Lives and Legaciesgreendigital
Introduction
The world of Hollywood is vast and interconnected. filled with countless stories of collaboration, friendship, and influence. Among these tales are the notable narratives of Brian Peck and Leonardo DiCaprio. The keyword "Brian Peck Leonardo DiCaprio" might not immediately ring a bell for everyone. but the connection between these two figures in the entertainment industry is intriguing and significant. This article delves deep into their lives, careers, and the moments where their paths intersect. providing a comprehensive look at how their stories intertwine.
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Early Life and Career Beginnings
Brian Peck: The Early Years
Brian Peck was born in New York City on July 29, 1960. From a young age, Peck exhibited a passion for the performing arts. He attended the Professional Children's School. which has a history of nurturing young talent in the arts. Peck's early career marked by a series of roles in television and film that showcased his versatility as an actor.
Peck's breakthrough came with his role in the cult classic "The Return of the Living Dead" (1985). His performance as Scuz, one of the punk rockers who releases a toxic gas that reanimates the dead. earned him a place in the annals of horror cinema. This role opened doors for Peck. allowing him to explore various facets of the entertainment industry. including writing and directing.
Leonardo DiCaprio: From Child Star to Hollywood Icon
Leonardo DiCaprio was born in Los Angeles, California, on November 11, 1974. His career began at a young age with appearances in television commercials and educational films. DiCaprio's big break came when he joined the cast of the popular sitcom "Growing Pains" (1985-1992). where he played the character Luke Brower.
DiCaprio's transition from television to film was seamless. He gained recognition for his role in "This Boy's Life" (1993) alongside Robert De Niro. This performance began a series of acclaimed roles. establishing DiCaprio as one of the most talented actors of his generation. His portrayal of Jack Dawson in James Cameron's "Titanic" (1997) catapulted him to global stardom. solidifying his status as a Hollywood icon.
Brian Peck Leonardo DiCaprio: Their Paths Cross
Collaborations and Connections
The keyword "Brian Peck Leonardo DiCaprio" signifies more than two names; it represents a fascinating connection in Hollywood. While their careers took different trajectories, their paths crossed in the 1990s. Brian Peck worked with DiCaprio on the set of the 1990s sitcom "Growing Pains." where DiCaprio had a recurring role. Peck appeared in a few episodes. contributing to the comedic and dynamic environment of the show.
Their professional relationship extended beyond "Growing Pains." Peck directed DiCaprio in several educational videos for the "Disneyland Fun" series. where DiCaprio's youthful charm and energy were evident. These early collaborations offered DiCaprio valuable experience in front of the camera. he
Morgan Freeman is Jimi Hendrix: Unveiling the Intriguing Hypothesisgreendigital
In celebrity mysteries and urban legends. Few narratives capture the imagination as the hypothesis that Morgan Freeman is Jimi Hendrix. This fascinating theory posits that the iconic actor and the legendary guitarist are, in fact, the same person. While this might seem like a far-fetched notion at first glance. a deeper exploration reveals a rich tapestry of coincidences, speculative connections. and a surprising alignment of life events fueling this captivating hypothesis.
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Introduction to the Hypothesis: Morgan Freeman is Jimi Hendrix
The idea that Morgan Freeman is Jimi Hendrix stems from a mix of historical anomalies, physical resemblances. and a penchant for myth-making that surrounds celebrities. While Jimi Hendrix's official death in 1970 is well-documented. some theorists suggest that Hendrix did not die but instead reinvented himself as Morgan Freeman. a man who would become one of Hollywood's most revered actors. This article aims to delve into the various aspects of this hypothesis. examining its origins, the supporting arguments. and the cultural impact of such a theory.
The Genesis of the Theory
Early Life Parallels
The hypothesis that Morgan Freeman is Jimi Hendrix begins by comparing their early lives. Jimi Hendrix, born Johnny Allen Hendrix in Seattle, Washington, on November 27, 1942. and Morgan Freeman, born on June 1, 1937, in Memphis, Tennessee, have lived very different lives. But, proponents of the theory suggest that the five-year age difference is negligible and point to Freeman's late start in his acting career as evidence of a life lived before under a different identity.
The Disappearance and Reappearance
Jimi Hendrix's death in 1970 at the age of 27 is a well-documented event. But, theorists argue that Hendrix's death staged. and he reemerged as Morgan Freeman. They highlight Freeman's rise to prominence in the early 1970s. coinciding with Hendrix's supposed death. Freeman's first significant acting role came in 1971 on the children's television show "The Electric Company," a mere year after Hendrix's passing.
Physical Resemblances
Facial Structure and Features
One of the most compelling arguments for the hypothesis that Morgan Freeman is Jimi Hendrix lies in the physical resemblance between the two men. Analyzing photographs, proponents point out similarities in facial structure. particularly the cheekbones and jawline. Both men have a distinctive gap between their front teeth. which is rare and often highlighted as a critical point of similarity.
Voice and Mannerisms
Supporters of the theory also draw attention to the similarities in their voices. Jimi Hendrix known for his smooth, distinctive speaking voice. which, according to some, resembles Morgan Freeman's iconic, deep, and soothing voice. Additionally, both men share certain mannerisms. such as their calm demeanor and eloquent speech patterns.
Artistic Parallels
Musical and Acting Talents
Jimi Hendrix was regarded as one of t
The Enigma of the Midnight Canvas, In the heart of Paris
Ch05p
1. Chapter 5
Exercise Problems
EX5.1
α
β=
1−α
0.980
For α = 0.980, β = = 49
1 − 0.980
0.995
For α = 0.995, β = = 199
1 − 0.995
So 49 ≤ β ≤ 199
EX5.2
BVCBO 200
BVCEO = = or BVCEO = 40.5 V
n β 3
120
EX5.3
V − VBE ( on ) 2 − 0.7
I B = BB = ⇒ 6.5 μ A
RB 200
I C = β I = (120 )( 6.5 μ A ) ⇒ I C = 0.78 mA
VCE = VCC − I C RC = 5 − ( 0.78 )( 4 ) or VCE = 1.88 V
P = I BVBE ( on ) + I CVCE = ( 0.0065 )( 0.7 ) + ( 0.78 )(1.88 ) ≅ 1.47 mW
EX5.4
V + − VEB ( on ) − VBB 5 − 0.7 − 2.8
IB = = or I B = 4.62 μ A
RB 325
I C = β I B = ( 80 )( 4.615 ) ⇒ I C = 0.369 mA
VEC = 2 = 5 − ( 0.369 ) RC which yields RC = 8.13 k Ω
EX5.5
VBB − VBE ( on ) 2 − 0.7
(a) IB = = ⇒ 5.91 μ A
RB 220
I C = β I B = (100 )( 5.91 μ A ) ⇒ 0.591 mA
I E = (1 + β ) I B = 0.597 mA
VCE = VCC − I C RC = 10 − ( 0.591)( 4 ) or VCE = 7.64 V
6.5 − 0.7
(b) IB = ⇒ 26.4 μ A
220
Transistor is biased in saturation mode, so
VCE = VCE ( sat ) = 0.2 V
VCC − VCE ( sat ) 10 − 0.2
IC = = or I C = 2.45 mA
RC 4
I E = I C + I B = 2.45 + 0.0264 ≅ 2.48 mA
EX5.6
For 0 ≤ VI < 0.7 V , Qn is cutoff, VO = 9 V
(100 )(VI − 0.7 )( 4 )
When Qn is biased in saturation, we have 0.2 = 9 − ⇒ VI = 5.1 V
200
So, for VI ≥ 5.1 V , VO = 0.2 V
EX5.7
2. VBB − VBE ( on ) 8 − 0.7
IB = =
RB + (1 + β ) RE 30 + ( 76 )(1.2 )
or I B = 60.2 μ A
I C = β I B = ( 75 )( 60.23 μ A ) ⇒ 4.52 mA
I E = (1 + β ) I B = 4.58 mA
VCE = VCC − I C RC − I E RE
= 12 − ( 4.517 )( 0.4 ) − ( 4.577 )(1.2 )
or VCE = 4.70 V
EX5.8
For VC = 4 V and ICQ = 1.5 mA,
V + − VC 10 − 4
RC = = ⇒ RC = 4 k Ω
I CQ 1.5
⎛ 1+ β ⎞ ⎛ 101 ⎞
IE = ⎜ ⎟ IC = ⎜ ⎟ (1.5 ) = 1.515 mA
⎝ β ⎠ ⎝ 100 ⎠
−V ( on ) − V −
also I E = BE
RE
−0.7 − ( −10 )
Then RE = ⇒ RE = 6.14 k Ω
1.515
EX5.9
3 − 0.7
I EQ = = 0.25
RE
RE = 9.2 kΩ
⎛ 75 ⎞
I CQ = ⎜ ⎟ ( 0.25 ) = 0.2467 mA
⎝ 76 ⎠
−0.7 + VCEQ + I CQ RC − 3 = 0
3 + 0.7 − 2
RC = ⇒ RC = 6.89 kΩ
0.2467
EX5.10
5 = I E RE + VEB ( on ) + I B RB − 2
⎛ 180 ⎞
(a) 5 + 2 − 0.7 = I E ⎜ 2 + ⎟ I E = 0.9859 mA
⎝ 41 ⎠
I C = 0.962 mA
⎛ 180 ⎞
(b) 6.3 = I E ⎜ 2 + ⎟ I E = 1.2725 mA
⎝ 61 ⎠
I C = 1.25 mA
⎛ 180 ⎞
(c) 6.3 = I E ⎜ 2 + ⎟ I E = 1.6657 mA
⎝ 101 ⎠
I C = 1.64 mA
⎛ 180 ⎞
(d) 6.3 = I E ⎜ 2 + ⎟ I E = 1.97365 mA
⎝ 151 ⎠
I C = 1.94 mA
EX5.11
3. VBB − VEB ( on ) 4 − 0.7
IE = ⇒ RE =
RE 1.0
or RE = 3.3 k Ω
I C = α I E = ( 0.992 )(1) = 0.992 mA
I B = I E − I C = 1.0 − 0.992 or I B = 8 μ A
VCB = I C RC − VCC = ( 0.992 )(1) − 5
or VCB = −4.01 V
EX5.12
V + − (Vγ + VCE ( sat ) ) 5 − (1.5 + 0.2 )
R= =
IC 15
or R = 220 Ω
15
IB = = 1 mA
15
v − VBE ( on ) 5 − 0.7
RB = I = = 4.3 k Ω
IB 1
P = I BVBE (on) + I CVCE
= (1)( 0.7 ) + (15 )( 0.2 ) = 3.7 mW
EX5.13
(a) For V1 = V2 = 0, All currents are zero and VO = 5 V.
(b) For V1 = 5 V, V2 = 0; IB2 = IC2 = 0,
5 − 0.7
I B1 = = 4.53 mA
0.95
5 − 0.2
I C1 = ⇒ I C1 = I R = 8 mA
0.6
VO = 0.2 V
(c) For V1 = V2 = 5 V, IB1 = IB2 = 4.53 mA; IR = 8 mA, IC1 = IC2 = IR/2 = 4 mA, VO = 0.2 V
EX5.14
vO = 5 − iC RC = 5 − β iB RC
ΔvO = − βΔiB RC
VBB + ΔvI − VBE ( on )
iB =
RB
ΔvI
ΔiB =
RB
ΔvO − β RC
Then =
ΔvI RB
Let β = 100, RC = 5 k Ω, RB = 100 k Ω
Δvo − (100 )( 5 )
So = = −5
ΔvI 100
Want Q-point to be vo ( Q − pt ) = 2.5 = 5 − (100 ) I BQ ( 5 )
VBB − 0.7
Then I BQ = 0.005 mA, I BQ = 0.005 =
100
so VBB = 1.2 V
Also, I CQ = β I BQ = (100 )( 0.005 ) = 0.5 mA
EX5.15
4. VCEQ = 2.5 = 5 − I CQ RC
5 − 2.5
or RC = = 10 k Ω
0.25
I CQ 0.25
I BQ = = = 0.002083 mA
β 120
5 − 0.7
Then RB = ⇒ RB = 2.06 M Ω
0.002083
EX5.16
(a) RTH = R1 R2 = 9 2.25 = 1.8 k Ω
⎛ R2 ⎞ ⎛ 2.25 ⎞
VTH = ⎜ ⎟ ⋅ VCC = ⎜ ⎟ ( 5)
⎝ R1 + R2 ⎠ ⎝ 9 + 2.25 ⎠
or VTH = 1.0 V
VTH − VBE ( on ) 1 − 0.7
(b) I BQ = =
RTH + (1 + β ) RE 1.8 + (151)( 0.2 )
or I BQ = 9.375 μ A
I CQ = β I BQ = (150 )( 9.375 μ A )
or I CQ = 1.41 mA
I EQ = (1 + β ) I BQ ⇒ I EQ = 1.42 mA
VCEQ = 5 − I CQ RC − I EQ RE
= 5 − (1.41)(1) − (1.42 )( 0.2 )
or VCEQ = 3.31 V
(c) For β = 75
1 − 0.7
I BQ = = 17.6 μ A
1.8 + ( 76 )( 0.2 )
I CQ = β I BQ = ( 75 )(17.6 μ A )
or I CQ = 1.32 mA
I EQ = (1 + β ) I BQ = ( 76 )(17.6 μ A )
or I EQ = 1.34 mA
VCEQ = 5 − (1.32 )(1) − (1.34 )( 0.2 )
or VCEQ = 3.41 V
EX5.17
VCEQ ≅ VCC − I CQ ( RC + RE )
or 2.5 ≅ 5 − I CQ (1 + 0.2 )
which yields
I CQ = 2.08 mA,
I CQ 2.08
I BQ = = = 0.0139 mA
β 150
RTH = ( 0.1)(1 + β ) RE = ( 0.1)(151)( 0.2 )
or RTH = 3.02 k Ω
⎛ R2 ⎞ 1
Now VTH = ⎜ ⎟ ⋅ VCC = ⋅ RTH ⋅ VCC
⎝ R1 + R2 ⎠ R1
1
so VTH = ( 3.02 )( 5 )
R1
We can write VTH = I BQ RTH + VBE ( on ) + (1 + β ) I BQ RE
5. 1
or ( 3.02 )( 5 ) = ( 0.0139 )( 3.02 ) + 0.7 + (151)( 0.0139 )( 0.2 )
R1
We obtain R1 = 13 k Ω and then R2 = 3.93 k Ω
EX5.18
β = 150, RTH = R1 || R2
5−0
I CQ = = 5 mA
1
I CQ 5
I BQ = = = 0.0333 mA
β 150
VTH − VBE ( on ) − ( −5 )
I BQ =
RTH + (1 + β ) RE
Set RTH = ( 0.1)(1 + β ) RE
⎛ R2 ⎞
We have VTH = ⎜ ⎟ (10 ) − 5
⎝ R1 + R2 ⎠
⎛ R2 ⎞
⎜ ⎟ (10 ) − 0.7
R + R2 ⎠
Then I BQ = 0.0333 = ⎝ 1
(1.1)(151)( 0.2 )
⎛ R2 ⎞
which yields ⎜ ⎟ = 0.1806
⎝ R1 + R2 ⎠
⎛ RR ⎞
Now RTH = ⎜ 1 2 ⎟ = ( 0.1)(151)( 0.2 ) = 3.02 k Ω
⎝ R1 + R2 ⎠
so R1 ( 0.1806 ) = 3.02 k Ω
We obtain R1 = 16.7 k Ω and R2 = 3.69 k Ω
EX5.19
V + − V − − VECQ 5 − ( −5 ) − 5
I CQ ≅ =
RC + RE 4.5 + 0.5
so I CQ = 1 mA, and
I CQ 1
I BQ = = = 0.00833 mA
β 120
RTH = ( 0.1)(1 + β ) RE = ( 0.1)(121)( 0.5 )
or RTH = 6.05 k Ω
We can write V + = I EQ RE + VEB ( on ) + I BQ RTH + VTH
1
We have VTH = ⋅ RTH (10 ) − 5 and if we let I EQ ≅ I CQ = 1 mA,
R1
1
then we have 5 = (1)( 0.5 ) + 0.7 + ( 0.00833)( 6.05 ) + ( 6.05 )(10 ) − 5
R1
which yields R1 = 6.91 k Ω and R2 = 48.6 k Ω
EX5.20
⎛ 2⎞ ⎛ 2 ⎞
I1 = I Q ⎜ 1 + ⎟ = ( 0.25 ) ⎜1 + ⎟ = 0.2625 mA
⎝ β⎠ ⎝ 40 ⎠
0 − VBE ( on ) − V −
0 − 0.7 − ( −5 )
R1 = =
I1 0.2625
or R1 = 16.38 k Ω
6. For VCEO = 3 V , then VCO = 2.3 V
⎛ β ⎞ ⎛ 40 ⎞
I CO = ⎜ ⎟ ⋅ I Q = ⎜ ⎟ ( 0.25 ) = 0.2439 mA
⎝ 1+ β ⎠ ⎝ 41 ⎠
+
V − VCO 5 − 2.3
RC = = = 11.07 k Ω
I CO 0.2439
EX5.21
RTH 50 ||100 = 33.3 k Ω
⎛ 50 ⎞
VTH = VTH = ⎜ ⎟ (10 ) − 5 = −1.67 V
⎝ 50 + 100 ⎠
−1.67 − 0.7 − ( −5 )
I B1 = ⇒ 11.2 μ A
33.3 + (101)( 2 )
I C1 = 1.12 mA, I E1 = 1.13 mA
VE1 = I E1 RE1 − 5 = (1.13)( 2 ) − 5 = −2.74 V
VCE1 = 3.25 V ⇒ VC1 = 0.51 V
Now VE 2 = 0.51 + 0.7 = 1.21 V
5 − 1.21
IE2 = = 1.90 mA ⇒ I B 2 = 18.8 μ A
2
IC 2 = 1.88 mA
I R1 = I C1 − I B 2 = 1.12 − 0.0188 = 1.10 mA
5 − 0.51
RC1 = = 4.08 k Ω
1.10
VEC 2 = 2.5 ⇒ VC 2 = VE 2 − VEC 2
= 1.21 − 2.5 = −1.29 V
−1.29 − ( −5 )
RC 2 = = 1.97 k Ω
1.88
EX5.22
12
We find = 240 k Ω = R1 + R2 + R3
0.05
Then VB1 = ( 0.5)( 2 ) + 0.7 = 1.7 V
1.7
R3 = = 34 k Ω
0.05
Also VB 2 = ( 0.5 )( 2 ) + 4 + 0.7 = 5.7 V
ΔVR 2 = 5.7 − 1.7 = 4 V
4
so R2 = = 80 k Ω
0.05
and R1 = 240 − 80 − 34 = 126 k Ω
VC 2 = 1 + 4 + 4 = 9 V
V + − VC 2 12 − 9
Then RC = = = 6 kΩ
I CQ 0.5
Test Your Understanding Exercises
TYU5.1
β
α=
1+ β
75
For β = 75, α = = 0.9868
76
7. 125
For β = 125, α = = 0.9921
126
TYU5.2
I E = (1 + β ) I B
IE 0.780
so 1 + β = = = 81.25 then β = 80.3
I B 0.00960
Now
β 80.25
α= = = 0.9877
1+ β 81.25
I C = α I E = ( 0.9877 )( 0.78 ) = 0.770 mA
TYU5.3
α 0.990
β= = = 99
1 − α 1 − 0.990
IE 2.15
Now I B = = ⇒ 21.5 μ A and I C = α I E = ( 0.990 )( 2.15 ) = 2.13 mA
1 + β 100
TYU5.4
V 150
ro = A =
IC IC
For I C = 0.1 mA ⇒ ro = 1.5 M Ω
For I C = 1.0 mA ⇒ ro = 150 k Ω
For I C = 10 mA ⇒ ro = 15 k Ω
TYU5.5
⎛ V ⎞
I C = I O ⎜1 + CE ⎟
⎝ VA ⎠
At VCE = 1 V , I C = 1 mA
⎛ 1 ⎞
(a) For VA = 75 V , I C = 1 = I O ⎜1 + ⎟ ⇒ I O = 0.9868 mA
⎝ 75 ⎠
Then, at VCE = 10 V
⎛ 10 ⎞
I C = ( 0.9868 ) ⎜ 1 + ⎟ = 1.12 mA
⎝ 75 ⎠
⎛ 1 ⎞
(b) For VA = 150 V , I C = 1 = I O ⎜ 1 + ⎟ ⇒ I O = 0.9934 mA
⎝ 150 ⎠
⎛ 10 ⎞
At VCE = 10 V , I C = ( 0.9934 ) ⎜ 1 + ⎟ = 1.06 mA
⎝ 150 ⎠
TYU5.6
BVCBO
BVCEO = so BVCBO = 3 100 ( 30 ) = 139 V
n β
TYU5.7
(a) For VI = 0.2 V < VBE ( on ) ⇒ I B = I C = 0, VO = 5 V and P = 0
(b) For VI = 3.6 V , transistor is driven into saturation, so
VI − VBE ( on ) 3.6 − 0.7 V + − VCE ( sat ) 5 − 0.2
IB = = = 4.53 mA and I C = = = 10.9 mA
RB 0.64 RC 0.440
8. I C 10.9
Note that = = 2.41 < β which shows that the transistor is indeed driven into saturation. Now,
I B 4.53
P = I BVBE ( on ) + I CVCE ( sat )
= ( 4.53)( 0.7 ) + (10.9 )( 0.2 ) = 5.35 mW
TYU5.8
For VBC = 0 ⇒ VO = 0.7 V
5 − 0.7 I 9.77
Then I C = = 9.77 mA and I B = C = = 0.195 mA
0.44 β 50
Now VI = I B RB + VBE ( on ) = ( 0.195 )( 0.64 ) + 0.7 or VI = 0.825 V
Also P = I BVBE ( on ) + I CVCE
= ( 0.195 )( 0.7 ) + ( 9.77 )( 0.7 ) = 6.98 mW
TYU5.9
V + − VC 10 − 6.34
IC = = = 0.915 mA
RC 4
−VBE ( on ) − V − −0.7 − ( −10 )
And I E = = or IE = 0.930
RE 10
I C 0.915 α 0.9839
Now α = = = 0.9839 and β = = = 61
I E 0.930 1 − α 1 − 0.9839
Also I B = I E − I C = 0.930 − 0.915 ⇒ 15 μ A and VCE = VC − VE = 6.34 − ( −0.7 ) = 7.04 V
TYU5.10
10 − 0.7
IE = = 1.16 mA
8
1.1625
IB = = 22.8 μ A
51
I C = ( 50 )( 22.8 μ A ) = 1.14 mA
VE = V + − I E RE = 10 − (1.1625 )( 8 ) = 0.7 V
VC = I C RC − 10 = (1.1397 )( 4 ) − 10 = −5.44
VEC = 0.7 − ( −5.44 )
VEC = 6.14 V
TYU5.11
VBB = I B RB + VBE ( on ) + I E RE
or VBB = I B RB + VBE ( on ) + (1 + β ) I B RE
VBB − VBE ( on ) 2 − 0.7
Then I B = =
RB + (1 + β ) RE 10 + ( 76 )(1)
or I B = 15.1 μ A
Also I C = ( 75 )(15.1 μ A ) = 1.13 mA and I E = ( 76 )(15.1 μ A ) = 1.15 mA
Now VCE = VCC + VBB − I C RC − I E RE
= 8 + 2 − (1.13)( 2.5 ) − (1.15 )(1) = 6.03 V
TYU5.12
VCE = 2.5 V ⇒ VE = 2.5 V = I E RE
We have VBB = I B RB + VBE ( on ) + VE
9. VBB − VBE ( on ) − VE 5 − 0.7 − 2.5
so I B = =
RB 10
or I B = 0.18 mA
Then I E = (101)( 0.18 ) = 18.2 mA
2.5
And RE = = 0.138 k Ω ⇒ 138 Ω
18.18
TYU5.13
VBB = I E RE + VEB ( on ) + I B RB
2.2
I E = 2.2 mA ⇒ I B = = 0.0431 mA
51
⎛ β ⎞ ⎛ 50 ⎞
and I C = ⎜ ⎟ ⋅ I E = ⎜ ⎟ ( 2.2 ) = 2.16 mA
⎝ 1+ β ⎠ ⎝ 51 ⎠
Then VBB = ( 2.2 )(1) + 0.7 + ( 0.0431)( 50 )
or VBB = 5.06 V
Now VEC = 5 − I E RE = 5 − ( 2.2 )(1) = 2.8 V
TYU5.14
(a) For vI = 0, iB = iC = 0, vO = 12 V , P = 0
vI − VBE ( on ) 12 − 0.7
(b) For vI = 12 V , iB = = = 47.1 mA
RB 0.24
VCC − VCE ( sat ) 12 − 0.1
iC = = = 2.38 A
RC 5
vO = 0.1 V
and
P = iBVBE ( on ) + iCVCE ( sat )
= ( 0.0471)( 0.7 ) + ( 2.38 )( 0.1) = 0.271 W
TYU5.15
5 − 2.5
(a) For VCEQ = 2.5 V , I CQ = = 1.25 mA
2
I CQ 1.25
I BQ = = ⇒ I BQ = 12.5 μ A
β 100
5 − 0.7
Then RB = = 344 k Ω
0.0125
(b) IBQ is independent of β .
5 −1
For VCEQ = 1 V , I C = = 2 mA
2
IC 2
β= = ⇒ β = 160
I B 0.0125
5−4
For VCEQ = 4 V , I C = = 0.5 mA
2
IC 0.5
β= = ⇒ β = 40
I B 0.0125
So 40 ≤ β ≤ 160
TYU5.16
5 − 0.7
I BQ = = 0.005375 mA
800
10. For β = 75, I CQ = β I BQ = ( 75 )( 0.005375 )
Or I CQ = 0.403 mA
For β = 150, I CQ = (150 )( 0.005375 )
Or I CQ = 0.806 mA
Largest I CQ ⇒ Smallest VCEQ
5 −1
For β = 150, RC = = 4.96 k Ω
0.806
5−4
For β = 75, RC = = 2.48 k Ω
0.403
5 − 2.5
For a nominal I CQ = 0.604 mA and VCEQ = 2.5 V , RC = = 4.14 k Ω
0.604
Now for I CQ = 0.403 mA, VCEQ = 5 − ( 0.403)( 4.14 ) = 3.33 V
For I CQ = 0.806 mA, VCEQ = 5 − ( 0.806 )( 4.14 ) = 1.66 V
So, for RC = 4.14 k Ω, 1.66 ≤ VCEQ ≤ 3.33 V
TYU5.17
(a)
⎛ β ⎞ ⎛ 100 ⎞
I CQ = ⎜ ⎟ ⋅ I EQ = ⎜ ⎟ (1) = 0.99 mA
⎝1+ β ⎠ ⎝ 101 ⎠
I EQ 1
I BQ = = ⇒ 9.90 μ A
1 + β 101
VB = − I BQ RB = − ( 0.0099 )( 50 )
or VB = −0.495 V
⎛ I CQ ⎞ ⎛ 0.99 × 10−3 ⎞
VBE = VT ln ⎜ ⎟ = ( 0.026 ) ln ⎜ −14 ⎟
⎝ IS ⎠ ⎝ 3 × 10 ⎠
or VBE = 0.630 V
Then VE = VB − VBE = −0.495 − 0.630 = −1.13 V
VC = 10 − ( 0.99 )( 5 ) = 5.05 V
Then VCEQ = VC − VE = 5.05 − ( −1.13) = 6.18 V
(b)
I EQ 1
I EQ = 1 mA, I BQ = = = 0.0196 mA
1 + β 51
VB = − ( 0.0196 )( 50 ) = −0.98 V
⎛ β ⎞ ⎛ 50 ⎞
I CQ = ⎜ ⎟ ⋅ I EQ = ⎜ ⎟ (1) = 0.98 mA
⎝1+ β ⎠ ⎝ 51 ⎠
⎛ 0.98 × 10−3 ⎞
VBE = ( 0.026 ) ln ⎜ −14 ⎟
= 0.629 V
⎝ 3 × 10 ⎠
VE = −0.98 − 0.629 = −1.61 V
VC = 10 − ( 0.98 )( 5 ) = 5.1 V
VCEQ = VC − VE = 5.1 − ( −1.61) = 6.71 V
TYU5.18
IQ IQ
IB = =
1 + β 121
and
11. ⎛ IQ ⎞
VB = ⎜ ⎟ ( 20 ) = I Q ( 0.165 )
⎝ 121 ⎠
VE = I Q ( 0.165 ) + 0.7
⎛ β ⎞ ⎛ 120 ⎞
I CQ = ⎜ ⎟ ⋅ I EQ = ⎜ ⎟ ⋅ I Q = ( 0.992 ) I Q
⎝ 1+ β ⎠ ⎝ 121 ⎠
VC = I CQ RC − 5 = ( 0.992 ) I Q ( 4 ) − 5
= 3.97 I Q − 5
VECQ = VE − VC
= ⎡ I Q ( 0.165 ) + 0.7 ⎤ − ⎡ I Q ( 3.97 ) − 5⎤
⎣ ⎦ ⎣ ⎦
= −3.805 I Q + 5.7
Then 3 = 5.7 − 3.805I Q
which yields I Q = 0.710 mA