10. Penguat Common Colector
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This document describes the common collector (CC) amplifier circuit, also known as an emitter follower. It provides the key equations for analyzing the CC amplifier, including expressions for output voltage, current, gain, input and output impedances. It also discusses the Darlington amplifier and series regulator circuits. The key points are: - The CC amplifier has a voltage gain approximately equal to 1 and a high input impedance and low output impedance. - Gain, input and output impedances depend on factors like the transistor's beta and the resistor values. - The Darlington amplifier has an extremely high input impedance due to its double beta gain stage. - A series regulator provides a stable output
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Original IGBT RJH60D3DPP -M0 RJH60D3 600V 17A TO-220 New
This document provides preliminary datasheet information for an IGBT (Insulated Gate Bipolar Transistor) device. The IGBT has a 600V blocking voltage, can handle up to 17A of current, and features a built-in fast recovery diode. It uses trench gate and thin wafer technologies for high speed switching. Absolute maximum ratings, electrical characteristics, switching characteristics and package details are provided. Testing information is also included to characterize parameters such as switching times, reverse recovery time and thermal performance.
Electronic devices and circuit theory 11th copy
This document contains significant equations and concepts related to electronic devices and circuits. Some key points include:
- Semiconductor diode equations including the relationship between voltage, current, and temperature.
- Bipolar junction transistor equations for current, voltage, power, and biasing configurations.
- Field effect transistor equations for current, voltage, power, and biasing configurations.
- Operational amplifier applications including inverting, non-inverting, summing amplifiers.
- Feedback and oscillator circuit concepts such as the Barkhausen criteria for oscillation.
3 phase diode rectifiers/power electronics
The document discusses a three phase diode rectifier presentation. It describes several three phase rectifier circuits including a half wave rectifier using three diodes, a six pulse midpoint rectifier, and a full wave bridge rectifier using six diodes. Equations are provided for the output voltage and current calculations for each circuit. Key specifications of automotive-grade rectifier diodes are also listed.
Original IGBT RJH60D2DPP RJH60D2 12A 600V TO-220 New Renesas
This document provides preliminary datasheet information for the RJH60D2DPP-M0 600V-12A IGBT module. Key specifications include a short circuit withstand time of 5us, low 1.7V saturation voltage, and 100ns diode reverse recovery time. The module uses trench gate and thin wafer technology for high speed switching under 80ns. It has a TO-220FL package and can withstand temperatures up to 150°C.
Transient analysis of clamping circuits
This document contains a detailed analysis of the transient response of a circuit containing a capacitor, diode, and resistors when subjected to a step input voltage VS. It analyzes the voltage and current values at different time intervals as the diode switches between forward and reverse biased states. Key points analyzed include the voltage across the capacitor VC, output voltage V0, and how they vary with time and the on/off state of the diode. Calculations are shown for V0 and VC at t=T/2, T, 3T/2, 2T, and 5T/2.
Calculated Values
This document contains calculations for resistances and voltages in an integrated circuit. It uses formulas to calculate the total resistance in series and parallel combinations. It then applies the voltage divider principle to determine voltages across specific resistances when a 10V source is applied. The calculations show the voltages across R1, R3, R4, and R5 are 5.15V, 4.85V, 1.58V, and 3.27V respectively.
Original IGTB GP70N33TBM-A GP70N33 70N33 TO-220F New IXYS
This document provides specifications for the FGPF70N33BT330V, 70A PDP IGBT including:
- Absolute maximum ratings and thermal characteristics
- Electrical characteristics such as saturation voltage, switching times, and gate charge
- Typical performance characteristics graphs for output, saturation voltage, capacitance, switching loss, and safe operating area
- Mechanical dimensions for the TO-220F package
It also includes notes on trademark, counterfeit policy, product status definitions, disclaimer, and life support policy.
LEC20G604 (6).pdf
The document provides specifications and characteristics for the LEC20G604 600V 20A IGBT module from LSIS. The module contains trench field stop IGBTs, free wheeling diodes, and an NTC temperature sensor. It has applications in three phase motor drives. The document includes maximum ratings, electrical characteristics, equivalent circuits, pin descriptions, and graphs of characteristics like forward voltage, switching times and losses for the IGBTs and diodes.
Analysis of CE Amplifier
This document analyzes the common emitter (CE) amplifier configuration for a bipolar junction transistor (BJT). It discusses the active condition, bias point, transconductance, input resistance, voltage gain, and equivalent circuit of the CE amplifier. The key points are that the CE amplifier has voltage gain that is approximately equal to -gmRC, where gm is the transconductance and RC is the collector resistance. An equivalent circuit is derived that models the amplifier at both DC and AC.
Three phase full wave rectifier
The document describes a three-phase, full-wave rectifier circuit using 6 diodes arranged in a bridge configuration. The upper diodes (D1, D3, D5) form the positive group and conduct during the positive half cycles of the input voltage. The lower diodes (D2, D4, D6) form the negative group and conduct during the negative half cycles. Calculations are provided for the output voltage, current, power, ripple, efficiency and transformer utilization factor of the three-phase full-wave rectifier.
Similar to 10. Penguat Common Colector (20)
Original IGBT N-CHANNEL IRG7IC28U IRG71C28U G7IC28U G71C28U 71C28 225A 600V T...
Original IGBT N-CHANNEL IRG7IC28U IRG71C28U G7IC28U G71C28U 71C28 225A 600V T...
Original IGBT IC IRGIB10B60KD1P 600V 21A New Infineon IR
Original IGBT IC IRGIB10B60KD1P 600V 21A New Infineon IR
Original IGBT N-CHANNEL IRG7R313U 7R313U 330V 160A TO-252 New
Original IGBT N-CHANNEL IRG7R313U 7R313U 330V 160A TO-252 New
Solutions manual for microelectronic circuits analysis and design 3rd edition...
Solutions manual for microelectronic circuits analysis and design 3rd edition...
Original IGBT RJH60D3DPP -M0 RJH60D3 600V 17A TO-220 New
Original IGBT RJH60D3DPP -M0 RJH60D3 600V 17A TO-220 New
Original IGBT RJH60D2DPP RJH60D2 12A 600V TO-220 New Renesas
Original IGBT RJH60D2DPP RJH60D2 12A 600V TO-220 New Renesas
Original IGTB GP70N33TBM-A GP70N33 70N33 TO-220F New IXYS
Original IGTB GP70N33TBM-A GP70N33 70N33 TO-220F New IXYS
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9 Penguat Emiter Sekutu
1) The document discusses the equivalent circuit, AC emitter resistance, voltage gain, input and output impedances, and an example circuit of a common emitter amplifier.
2) The AC emitter resistance is calculated as the change in base-emitter voltage over the change in emitter current. Voltage gain is calculated as the output voltage over the input voltage, which is approximately equal to the collector resistance divided by the emitter resistance.
3) Input impedance is calculated as the beta value multiplied by the emitter resistance, while output impedance is approximately equal to the collector resistance.
8. Rangkaian Pra-Tegangan Transistor
Dokumen tersebut membahas tentang prinsip-prinsip dasar rangkaian prategangan transistor NPN dan PNP, termasuk persamaan-persamaan yang menjelaskan hubungan antara arus dan tegangan pada emiter, basis, dan kolektor transistor. Secara khusus dijelaskan prinsip kerja prategangan umpan-balik emiter, kolektor, dan penggunaan pembagi tegangan untuk mendapatkan prategangan yang stabil dan impedansi masukan yang besar. Contoh-con
6 Pengganda Tegangan Limiter
Dokumen ini membahas berbagai jenis rangkaian elektronika daya seperti pengganda tegangan, pengali tegangan, pembatas, penjepit DC, dan detektor puncak ke puncak. Secara khusus, dibahas rangkaian dioda tak seimbang yang menggunakan kapasitor dan resistor untuk menghasilkan tegangan DC dari sumber AC melalui proses pengisian dan pengosongan kapasitor.
5 Dioda Zener
Diode zener digunakan sebagai regulator tegangan. Zener akan mengalami keadaan dadal pada tegangan zenernya (VZ) sehingga tegangan keluaran (VOUT) dapat dipertahankan konstan pada VZ meskipun tegangan masukan (VS) berubah. Daya yang diserap zener akan berubah seiring perubahan arus zener (IZ) yang dipengaruhi oleh VS dan arus beban (IL).
1 Arus dan Tegangan
Dokumen tersebut membahas tentang prinsip-prinsip elektronika dasar seperti aliran elektron, arus listrik, sumber tegangan ideal dan riil, sumber arus ideal dan riil, serta teorema Thevenin untuk meringkas rangkaian listrik multi-loop menjadi satu sumber tegangan dan satu tahanan setara.
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10. Penguat Common Colector
- 1. Penguat CC (Common Collector) Disebut juga : • Penguat Kolektor Bersama • Pengikut Emiter (Emitter Follower)
- 3. VCC = IE.RE + VCE IC ≈ IE = (VCC – VCE) / RE vout = ie.RE vin = ie (RE + re’) A = vout / vin = RE / (RE + re’) Jika RE >> re’ maka A≈1
- 4. Contoh 8-1 VTH = 10V.(10K / 20K) = 5V VE = 5V – 0,7V = 4,3V VC = 10V IE = V E / RE = 4,3V / 4,3KΩ = 1 mA re’ = 25mV/1mA = 25Ω A = 4300 / (4300 + 25) = 0,994 vout = 0,994 x 1V = 0,994V
- 5. Model AC dari penguat CC
- 6. zin(basis) = β(RE + re’) ≈ β.RE zin = R1 // R2 // zin(basis) ≈ R1 // R2 zout(emiter) = r e’ + (RS // R1 // R2)/β zout = zout(emiter) // RE Jika RE sangat besar maka : zout ≈ zout(emiter) A = RE / {RE + re’ + (RS // R1 //R2)/β}
- 8. Jika β.zin(base) sangat besar maka zin ≈ R1//R2 Jika RE>>zout(emitter) maka zout ≈ zout(emitter)
- 9. Contoh 8-3 zin = R1//R2 = 5kΩ re’ = 25Ω (dari soal lalu) RS//R1//R2 = 2,09kΩ β = 100 zout(emitter) = 25Ω + 2,09kΩ/100 = 45,9Ω zout ≈ 45,9Ω vin = 100mV.(5k/8k6) = 58,1mV Jika A = 1 maka vout = 58,1mV
- 10. Penguat Darlington IE2 = (VTH – 2.VBE)/RE IE1 = IB2 ≈ IE2/βDC zin2 = β2.RE zin1 = β1.β2.RE Karena ini sangat besar maka : zin ≈ R1//R2
- 11. rth = RS//R1//R2 zout1= re1’ + rth/β1 zout2= re2’ + zout1/β2 = re2’ + (re1’ + rth/β1)/β2
- 12. Regulator Seri VOUT = VZ – VBE IB = IL/βDC Zout = re’ + RZ/β Disipasi Daya : PD = VCE.IC VCE = VIN – VOUT Jika β sangat besar maka I C ≈ IE
- 13. Contoh 8-6 Hitung IZ jika β = 80 IS = (20V – 10V) / 680Ω = 14,7mA VOUT = VB – VBE =10V – 0,7V = 9,3V IE = VOUT / RL = 0,62A IB = IE/β = 0,62A / 80 = 7,75 mA IZ = I S – I B = 14,7mA – 7,75mA = 6,95mA PD = (20V – 9,3V).0,62A = 6,63W re’ = 25mV/0,62A = 0,04Ω zout = 0,04Ω + 7/100 = 0,11Ω