The document provides specifications and characteristics for the 2N918 NPN silicon high frequency transistor. Key details include: - It is designed for high frequency, low noise amplifier and oscillator applications. - Maximum ratings include a collector current of 50mA, collector-emitter voltage of 15V, and power dissipation of 300mW at 25°C or 200mW at 150°C. - Package style is TO-72 and the transistor has an emitter, base, collector and case.

1. A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25
O
C NONE
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 3.0 mA 15 V
BVCBO IC = 1.0 µA 30 V
ICBO
VCB = 15 V
VCB = 15 V TA = 150
O
C
0.01
1.0
µµµµA
BVEBO IE = 10 µA 3.0 V
hFE VCE = 1.0 V IC = 3.0 mA 20 ---
VCE(SAT) IC = 10 mA IB = 1.0 mA 0.4 V
VBE(SAT) IC = 10 mA IB = 1.0 mA 1.0 V
ft VCE = 10 V IC = 4.0 mA f = 100 MHz 600 MHz
Cob
VCB = 0 V f = 140 KHz
VCB = 10 V f = 140 KHz
3.0
1.7
pF
Cib VEB = 0.5 V f = 140 KHz 2.0 pF
NF VCE = 6.0 V IC = 1.0 mA f = 60 MHz 6.0 dB
Gpe VCB = 12 V IC = 6.0 mA f = 200 MHz 15 dB
Pout
ηηηη
VCB = 15 V IC = 8.0 mA f = 500 MHz
30
25
mW
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N918
DESCRIPTION:
The 2N918 is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
IC 50 mA
VCE 15 V
PDISS
300 mW @ TC = 25
O
C
200 mW @ TC = 25
O
C
TJ -65
O
C to +200
O
C
TSTG -65
O
C to +200
O
C
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE