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© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1 Publication Order Number:
BC556B/D
BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage
BC556
BC557
BC558
VCEO
−65
−45
−30
Vdc
Collector - Base Voltage
BC556
BC557
BC558
VCBO
−80
−50
−30
Vdc
Emitter - Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous
Collector Current − Peak
IC
ICM
−100
−200
mAdc
Base Current − Peak IBM −200 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD 625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC
55xx
AYWW G
G
xx = 6B, 7A, 7B, 7C, or 8B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BC556B, BC557A, B, C, BC558B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0) BC556
BC557
BC558
V(BR)CEO
−65
−45
−30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage
(IC = −100 mAdc) BC556
BC557
BC558
V(BR)CBO
−80
−50
−30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage
(IE = −100 mAdc, IC = 0) BC556
BC557
BC558
V(BR)EBO
−5.0
−5.0
−5.0
−
−
−
−
−
−
V
Collector−Emitter Leakage Current
(VCES = −40 V) BC556
(VCES = −20 V) BC557
BC558
(VCES = −20 V, TA = 125°C) BC556
BC557
BC558
ICES
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 V) A Series Device
B Series Devices
C Series Devices
(IC = −2.0 mAdc, VCE = −5.0 V) BC557
A Series Device
B Series Devices
C Series Devices
(IC = −100 mAdc, VCE = −5.0 V) A Series Device
B Series Devices
C Series Devices
hFE
−
−
−
120
120
180
420
−
−
−
90
150
270
−
170
290
500
120
180
300
−
−
−
800
220
460
800
−
−
−
−
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
VCE(sat)
−
−
−
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
V
Base−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
VBE(sat)
−
−
−0.7
−1.0
−
−
V
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
VBE(on)
−0.55
−
−0.62
−0.7
−0.7
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz) BC556
BC557
BC558
fT
−
−
−
280
320
360
−
−
−
MHz
Output Capacitance
(VCB = −10 V, IC = 0, f = 1.0 MHz)
Cob − 3.0 6.0 pF
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 V, BC556
RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557
BC558
NF
−
−
−
2.0
2.0
2.0
10
10
10
dB
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557
A Series Device
B Series Devices
C Series Devices
hfe
125
125
240
450
−
−
−
−
900
260
500
900
−
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.
BC556B, BC557A, B, C, BC558B
http://onsemi.com
3
BC557/BC558
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
−0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−0.6
−0.7
−0.8
−0.9
−1.0
−0.5
0
−0.2
−0.4
−0.1
−0.3
1.6
1.2
2.0
2.8
2.4
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0
−20−0.1
−0.4
−0.8
hFE,NORMALIZEDDCCURRENTGAIN
V,VOLTAGE(VOLTS)
VCE,COLLECTOR−EMITTERVOLTAGE(V)
VB,TEMPERATURECOEFFICIENT(mV/C)°θ
1.5
1.0
0.7
0.5
0.3
−0.2 −10 −100−1.0
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = −10 V
VCE = −10 V
TA = 25°C
−55°C to +125°C
IC = −100 mA
IC = −20 mA
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
IC = −200 mAIC = −50 mAIC =
−10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
−0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
−0.5
C,CAPACITANCE(pF)
f,CURRENT−GAIN−BANDWIDTHPRODUCT(MHz)T
TA = 25°C
Cob
Cib
−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
150
−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50
VCE = −10 V
TA = 25°C
TA = 25°C
1.0
BC556B, BC557A, B, C, BC558B
http://onsemi.com
4
BC556
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
−0.8
−1.0
−0.6
−0.2
−0.4
1.0
2.0
−0.1 −1.0 −10 −200−0.2
0.2
0.5
−0.2 −1.0 −10 −200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = −5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−1.0
−1.2
−1.6
−2.0
−0.02 −1.0 −10
0
−20−0.1
−0.4
−0.8
VCE,COLLECTOR−EMITTERVOLTAGE(VOLTS)
VB,TEMPERATURECOEFFICIENT(mV/C)°θ
−0.2 −2.0 −10 −200−1.0
TJ = 25°C
IC =
−10 mA
hFE,DCCURRENTGAIN(NORMALIZED)
V,VOLTAGE(VOLTS)
VCE = −5.0 V
TA = 25°C
0
−0.5 −2.0 −5.0 −20 −50 −100
−0.05 −0.2 −0.5 −2.0 −5.0
−100 mA−20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
−0.5 −5.0 −20 −50 −100
−55°C to 125°C
qVB for VBE
−2.0 −5.0 −20 −50 −100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
−0.1 −0.2 −1.0 −50
2.0
−2.0 −10 −100
100
200
500
50
20
20
10
6.0
4.0
−1.0 −10 −100
VCE = −5.0 V
C,CAPACITANCE(pF)
f,CURRENT−GAIN−BANDWIDTHPRODUCTT
−0.5 −5.0 −20
TJ = 25°C
Cob
Cib
8.0
−50 mA −200 mA
BC556B, BC557A, B, C, BC558B
http://onsemi.com
5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t),TRANSIENTTHERMAL
2.0 5.01.00.50.20.1
RESISTANCE(NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0 k 2.0 k 5.0 k 10
Figure 14. Active Region − Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
IC,COLLECTORCURRENT(mA)
TA = 25°C
D = 0.5
0.2
0.1
0.05 SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZqJC(t) = (t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
−100
−50
−10
−5.0
−2.0
−5.0 −10 −30 −45 −65 −100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC−VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
BC556B, BC557A, B, C, BC558B
http://onsemi.com
6
ORDERING INFORMATION
Device Package Shipping†
BC556BG TO−92
(Pb−Free)
5000 Units / Bulk
BC556BZL1G TO−92
(Pb−Free)
2000 / Ammo Box
BC557AZL1G TO−92
(Pb−Free)
2000 / Ammo Box
BC557BG TO−92
(Pb−Free)
5000 Units / Bulk
BC557BRL1 TO−92 2000 / Tape & Reel
BC557BRL1G TO−92
(Pb−Free)
2000 / Tape & Reel
BC557BZL1G TO−92
(Pb−Free)
2000 / Ammo Box
BC557CG TO−92
(Pb−Free)
5000 Units / Bulk
BC557CZL1G TO−92
(Pb−Free)
2000 / Ammo Box
BC558BRLG TO−92
(Pb−Free)
2000 / Tape & Reel
BC558BRL1G TO−92
(Pb−Free)
2000 / Tape & Reel
BC558BZL1G TO−92
(Pb−Free)
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC556B, BC557A, B, C, BC558B
http://onsemi.com
7
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
CV
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
B
K
G
SECTION X−X
C
V
D
N
X X
SEATING
PLANE DIM MIN MAX
MILLIMETERS
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−
1
T
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
BC556B/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
ON Semiconductor:
BC556B BC556BG BC556BZL1 BC556BZL1G BC557AZL1 BC557AZL1G BC557B BC557BG BC557BRL1
BC557BRL1G BC557BZL1 BC557BZL1G BC557C BC557CG BC557CZL1 BC557CZL1G BC558BRL
BC558BRL1 BC558BRL1G BC558BRLG BC558BZL1 BC558BZL1G BC558C BC558B

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Original PNP Transistor BC557C C557C 557 TO-92 New

  • 1. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 Publication Order Number: BC556B/D BC556B, BC557A, B, C, BC558B Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BC556 BC557 BC558 VCEO −65 −45 −30 Vdc Collector - Base Voltage BC556 BC557 BC558 VCBO −80 −50 −30 Vdc Emitter - Base Voltage VEBO −5.0 Vdc Collector Current − Continuous Collector Current − Peak IC ICM −100 −200 mAdc Base Current − Peak IBM −200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 TO−92 CASE 29 STYLE 17 MARKING DIAGRAM BC 55xx AYWW G G xx = 6B, 7A, 7B, 7C, or 8B A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
  • 2. BC556B, BC557A, B, C, BC558B http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = −2.0 mAdc, IB = 0) BC556 BC557 BC558 V(BR)CEO −65 −45 −30 − − − − − − V Collector−Base Breakdown Voltage (IC = −100 mAdc) BC556 BC557 BC558 V(BR)CBO −80 −50 −30 − − − − − − V Emitter−Base Breakdown Voltage (IE = −100 mAdc, IC = 0) BC556 BC557 BC558 V(BR)EBO −5.0 −5.0 −5.0 − − − − − − V Collector−Emitter Leakage Current (VCES = −40 V) BC556 (VCES = −20 V) BC557 BC558 (VCES = −20 V, TA = 125°C) BC556 BC557 BC558 ICES − − − − − − −2.0 −2.0 −2.0 − − − −100 −100 −100 −4.0 −4.0 −4.0 nA mA ON CHARACTERISTICS DC Current Gain (IC = −10 mAdc, VCE = −5.0 V) A Series Device B Series Devices C Series Devices (IC = −2.0 mAdc, VCE = −5.0 V) BC557 A Series Device B Series Devices C Series Devices (IC = −100 mAdc, VCE = −5.0 V) A Series Device B Series Devices C Series Devices hFE − − − 120 120 180 420 − − − 90 150 270 − 170 290 500 120 180 300 − − − 800 220 460 800 − − − − Collector−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −10 mAdc, IB = see Note 1) (IC = −100 mAdc, IB = −5.0 mAdc) VCE(sat) − − − −0.075 −0.3 −0.25 −0.3 −0.6 −0.65 V Base−Emitter Saturation Voltage (IC = −10 mAdc, IB = −0.5 mAdc) (IC = −100 mAdc, IB = −5.0 mAdc) VBE(sat) − − −0.7 −1.0 − − V Base−Emitter On Voltage (IC = −2.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) VBE(on) −0.55 − −0.62 −0.7 −0.7 −0.82 V SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 V, f = 100 MHz) BC556 BC557 BC558 fT − − − 280 320 360 − − − MHz Output Capacitance (VCB = −10 V, IC = 0, f = 1.0 MHz) Cob − 3.0 6.0 pF Noise Figure (IC = −0.2 mAdc, VCE = −5.0 V, BC556 RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557 BC558 NF − − − 2.0 2.0 2.0 10 10 10 dB Small−Signal Current Gain (IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557 A Series Device B Series Devices C Series Devices hfe 125 125 240 450 − − − − 900 260 500 900 − 1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.
  • 3. BC556B, BC557A, B, C, BC558B http://onsemi.com 3 BC557/BC558 Figure 1. Normalized DC Current Gain IC, COLLECTOR CURRENT (mAdc) 2.0 Figure 2. “Saturation” and “On” Voltages IC, COLLECTOR CURRENT (mAdc) −0.2 0.2 Figure 3. Collector Saturation Region IB, BASE CURRENT (mA) Figure 4. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) −0.6 −0.7 −0.8 −0.9 −1.0 −0.5 0 −0.2 −0.4 −0.1 −0.3 1.6 1.2 2.0 2.8 2.4 −1.2 −1.6 −2.0 −0.02 −1.0 −10 0 −20−0.1 −0.4 −0.8 hFE,NORMALIZEDDCCURRENTGAIN V,VOLTAGE(VOLTS) VCE,COLLECTOR−EMITTERVOLTAGE(V) VB,TEMPERATURECOEFFICIENT(mV/C)°θ 1.5 1.0 0.7 0.5 0.3 −0.2 −10 −100−1.0 TA = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = −10 V VCE = −10 V TA = 25°C −55°C to +125°C IC = −100 mA IC = −20 mA −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 IC = −200 mAIC = −50 mAIC = −10 mA Figure 5. Capacitances VR, REVERSE VOLTAGE (VOLTS) 10 Figure 6. Current−Gain − Bandwidth Product IC, COLLECTOR CURRENT (mAdc) −0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 −0.5 C,CAPACITANCE(pF) f,CURRENT−GAIN−BANDWIDTHPRODUCT(MHz)T TA = 25°C Cob Cib −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40 150 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VCE = −10 V TA = 25°C TA = 25°C 1.0
  • 4. BC556B, BC557A, B, C, BC558B http://onsemi.com 4 BC556 Figure 7. DC Current Gain IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage IC, COLLECTOR CURRENT (mA) −0.8 −1.0 −0.6 −0.2 −0.4 1.0 2.0 −0.1 −1.0 −10 −200−0.2 0.2 0.5 −0.2 −1.0 −10 −200 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 VBE @ VCE = −5.0 V Figure 9. Collector Saturation Region IB, BASE CURRENT (mA) Figure 10. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) −1.0 −1.2 −1.6 −2.0 −0.02 −1.0 −10 0 −20−0.1 −0.4 −0.8 VCE,COLLECTOR−EMITTERVOLTAGE(VOLTS) VB,TEMPERATURECOEFFICIENT(mV/C)°θ −0.2 −2.0 −10 −200−1.0 TJ = 25°C IC = −10 mA hFE,DCCURRENTGAIN(NORMALIZED) V,VOLTAGE(VOLTS) VCE = −5.0 V TA = 25°C 0 −0.5 −2.0 −5.0 −20 −50 −100 −0.05 −0.2 −0.5 −2.0 −5.0 −100 mA−20 mA −1.4 −1.8 −2.2 −2.6 −3.0 −0.5 −5.0 −20 −50 −100 −55°C to 125°C qVB for VBE −2.0 −5.0 −20 −50 −100 Figure 11. Capacitance VR, REVERSE VOLTAGE (VOLTS) 40 Figure 12. Current−Gain − Bandwidth Product IC, COLLECTOR CURRENT (mA) −0.1 −0.2 −1.0 −50 2.0 −2.0 −10 −100 100 200 500 50 20 20 10 6.0 4.0 −1.0 −10 −100 VCE = −5.0 V C,CAPACITANCE(pF) f,CURRENT−GAIN−BANDWIDTHPRODUCTT −0.5 −5.0 −20 TJ = 25°C Cob Cib 8.0 −50 mA −200 mA
  • 5. BC556B, BC557A, B, C, BC558B http://onsemi.com 5 Figure 13. Thermal Response t, TIME (ms) 1.0 r(t),TRANSIENTTHERMAL 2.0 5.01.00.50.20.1 RESISTANCE(NORMALIZED) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 5010 200 500100 1.0 k 2.0 k 5.0 k 10 Figure 14. Active Region − Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) −200 −1.0 IC,COLLECTORCURRENT(mA) TA = 25°C D = 0.5 0.2 0.1 0.05 SINGLE PULSE SINGLE PULSE BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 3 ms TJ = 25°C ZqJC(t) = (t) RqJC RqJC = 83.3°C/W MAX ZqJA(t) = r(t) RqJA RqJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) t1 t2 P(pk) DUTY CYCLE, D = t1/t2 −100 −50 −10 −5.0 −2.0 −5.0 −10 −30 −45 −65 −100 1 s BC558 BC557 BC556 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
  • 6. BC556B, BC557A, B, C, BC558B http://onsemi.com 6 ORDERING INFORMATION Device Package Shipping† BC556BG TO−92 (Pb−Free) 5000 Units / Bulk BC556BZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC557AZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC557BG TO−92 (Pb−Free) 5000 Units / Bulk BC557BRL1 TO−92 2000 / Tape & Reel BC557BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC557BZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC557CG TO−92 (Pb−Free) 5000 Units / Bulk BC557CZL1G TO−92 (Pb−Free) 2000 / Ammo Box BC558BRLG TO−92 (Pb−Free) 2000 / Tape & Reel BC558BRL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC558BZL1G TO−92 (Pb−Free) 2000 / Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
  • 7. BC556B, BC557A, B, C, BC558B http://onsemi.com 7 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L B K G H SECTION X−X CV D N N X X SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.115 −−− 2.93 −−− V 0.135 −−− 3.43 −−− 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J B K G SECTION X−X C V D N X X SEATING PLANE DIM MIN MAX MILLIMETERS A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80 J 0.39 0.50 K 12.70 −−− N 2.04 2.66 P 1.50 4.00 R 2.93 −−− V 3.43 −−− 1 T STRAIGHT LEAD BULK PACK BENT LEAD TAPE & REEL AMMO PACK STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 BC556B/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
  • 8. Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: BC556B BC556BG BC556BZL1 BC556BZL1G BC557AZL1 BC557AZL1G BC557B BC557BG BC557BRL1 BC557BRL1G BC557BZL1 BC557BZL1G BC557C BC557CG BC557CZL1 BC557CZL1G BC558BRL BC558BRL1 BC558BRL1G BC558BRLG BC558BZL1 BC558BZL1G BC558C BC558B