This document provides a device modeling report for a Schottky rectifier diode with part number XBS204S17R. It includes: 1) Details of the diode components and manufacturer. 2) Descriptions of the PSpice model parameters used to simulate the diode. 3) Simulation results and comparisons with measurement data for the diode's forward and reverse characteristics, capacitance over voltage, and reverse recovery time. 4) Circuit diagrams used to simulate the diode's electrical behavior.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: XBS204S17R
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
10mA
0V 200mV 400mV 600mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS204S17R_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Forward Current:IF (A)
1
0.1
0.01
0 0.2 0.4 0.6
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.01 0.248 0.251 1.06
0.02 0.268 0.269 0.41
0.05 0.296 0.294 -0.61
0.1 0.317 0.315 -0.65
0.2 0.340 0.338 -0.45
0.5 0.377 0.378 0.14
1 0.416 0.417 0.31
2 0.470 0.470 -0.10
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
500p
400p
300p
200p
100p
0
0V 10V 20V 30V 40V
I(V2)/(45V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 45 V1 U1
V1 = 0 XBS204S17R_P
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
500
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
400
300
200
100
0
0 10 20 30 40
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
1 175.000 176.945 1.11
2 142.000 141.176 -0.58
5 98.000 98.738 0.75
10 72.000 73.398 1.94
20 54.000 53.797 -0.38
30 45.000 44.720 -0.62
40 40.000 39.184 -2.04
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
10mA
0A
-10mA
-20mA
1.6us 1.8us 2.0us 2.2us 2.4us 2.5us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.25V
V1 = -0.76V
TD = 3.0ns V1 U1
TR = 1.5ns XBS204S17R_P
PW = 2us
TF = 1.0ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 51.000 52.313 2.57
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8. Reverse Characteristic
Circuit Simulation Result
100uA
0
10uA
1.0uA
100nA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
100
V2 = 1.25V
V1 = -0.76V
TD = 3.0ns V1 U1
TR = 1.5ns XBS204S17R_P
PW = 2us
TF = 1.0ns
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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9. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Reverse Current:IR (uA)
10.00
1.00
0.10
0 10 20 30 40
Reverse Voltage:VR (V)
Simulation Result
IR (uA)
VR (V) %Error
Measurement Simulation
1 0.800 0.782 -2.20
2 0.900 0.918 1.95
5 1.270 1.278 0.59
10 1.780 1.768 -0.69
20 2.650 2.654 0.16
30 4.000 3.998 -0.05
40 6.500 6.501 0.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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