SPICE MODEL of C3D06060A (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: C3D06060A
MANUFACTURER: CREE
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

2. Circuit Configuration
PIN1
CASE
PIN2
U1
C3D06060A_P
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

3. Forward Current Characteristic
Circuit Simulation Result
12A
11A
10A
9A
8A
7A
6A
5A
4A
3A
2A
1A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m U1
C3D06060A_P
V1
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

4. Comparison Graph
Circuit Simulation Result
12.0
Measurement
11.0
Simulation
10.0
FORWARD CURRENT: IF(A)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
FORWARD VOLTAGE: VF(V)
Simulation Result
VF(V)
IF(A) Error (%)
Measurement Simulation
0.5 0.9200 0.9246 0.50
1.0 0.9900 0.9907 0.07
2.0 1.1100 1.1048 -0.47
4.0 1.3100 1.3151 0.39
6.0 1.5100 1.5180 0.53
8.0 1.7200 1.7179 -0.12
10.0 1.9100 1.9161 0.32
12.0 2.1200 2.1132 -0.32
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

5. Junction Capacitance Characteristic
Circuit Simulation Result
350p
300p
250p
200p
150p
100p
50p
0
1.0V 10V 100V 600V
I(V2)/(600V/500n)
V(N16614)
Evaluation Circuit
V2
0Vdc
U1
V2 = 600 V1 C3D06060A_P
V1 = 0
TD = 0
TR = 500ns
TF = 500ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

6. Comparison Graph
Circuit Simulation Result
350
Measurement
Simulation
300
250
CAPACITANCE: C(pF)
200
150
100
50
0
1 10 100 1000
REVERSE VOLTAGE:VR(V)
Simulation Result
C (pF)
VR(V) Error (%)
Measurement Simulation
1 293.000 302.118 3.11
2 218.000 217.674 -0.15
5 133.000 139.020 4.53
10 103.000 99.435 -3.46
20 76.000 72.333 -4.83
50 51.000 49.412 -3.11
100 37.000 38.619 4.38
300 27.000 28.339 4.96
600 25.500 24.537 -3.78
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

7. Reverse Characteristic
Circuit Simulation Result
100uA
90uA
80uA
70uA
60uA
50uA
40uA
30uA
20uA
10uA
0A
0V 0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc C3D06060A_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010

8. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
90
80
REVERSE CURRENT:IR(uA )
70
60
50
40
30
20
10
0
0 200 400 600 800 1000 1200
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(uA)
VR(V) Error (%)
Measurement Simulation
200 0.0028 0.0028 1.51
400 0.0055 0.0057 3.35
600 0.0700 0.0682 -2.55
720 0.5000 0.5002 0.04
800 2.0000 1.9327 -3.37
880 7.2000 7.4920 4.06
960 30.0000 29.0240 -3.25
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010