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Device Modeling Report



COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / STANDARD
PART NUMBER: SG30SC6M
MANUFACTURER: SHINDENGEN




                  Bee Technologies Inc.



    All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                   1
Spice Model Parameters

  PSpice model
                                        Model description
   parameter
       IS        Saturation Current
       N         Emission Coefficient
       RS        Series Resistance
      IKF        High-injection Knee Current
      CJO        Zero-bias Junction Capacitance
       M         Junction Grading Coefficient
       VJ        Junction Potential
      ISR        Recombination Current Saturation Value
       BV        Reverse Breakdown Voltage(a positive value)
      IBV        Reverse Breakdown Current(a positive value)
       TT        Transit Time
      EG         Energy-band Gap




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                           2
Forward Current Characteristic


Circuit Simulation Result


           100A




            10A




           1.0A




          100mA
                  0V                  0.5V               1.0V          1.5V           2.0V
                       I(R1)
                                                         V_V1

Evaluation Circuit

                                             R1


                                             0.01m



                                      V1                            U1
                               0Vdc                                 SG30SC6M



                                                                  R2
                                                                  100MEG



                                                     0




                       All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                             3
Comparison Graph

Circuit Simulation Result

            FORWARD CURRENT:IF(A)   100




                                     10




                                      1




                                                                                   Measurement
                                                                                   Simulation
                                    0.1
                                          0           0.5            1             1.5              2
                                                       FORWARD VOLTAGE:VF(V)

Simulation Result

                                                        Vfwd (V)
            Ifwd (A)                                                                            %Error
                                              Measurement       Simulation
                                      0.1            0.2450            0.2445                       -0.19
                                      0.2            0.2650            0.2637                       -0.49
                                      0.5            0.2950            0.2912                       -1.29
                                        1            0.3150            0.3150                       -0.01
                                        2            0.3450            0.3448                       -0.05
                                        5            0.4050            0.4041                       -0.21
                                       10            0.4800            0.4813                        0.27
                                       20            0.6100            0.6177                        1.25
                                       50            0.9700            0.9966                        2.74
                                     100             1.6200            1.6066                       -0.83




                                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                                            4
Capacitance Characteristic

Circuit Simulation Result


           10n




          1.0n




          100p




           10p
            100mV                           1.0V                   10V              60V
                I(V2)/(60V/100n)
                                                   V(N16610)



Evaluation Circuit

                                             V2


                                                   0Vdc           R1
                                                                  100MEG


                         V2 = 60       V1
                         V1 = 0                                      U1
                         TD = 0                                      SG30SC6M
                         TR = 100ns
                         TF = 100ns
                         PW = 100us
                         PER = 500us


                                                   0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                          5
Comparison Graph

Circuit Simulation Result


                             10000
                                                                                      Measurement
                                                                                      Simulation
            JUNCTION CAPACITANCE




                                   1000
                    Cj(pF)




                                   100




                                     10
                                          0.1                1                   10
                                                        REVERSE VOLTAGE:VR(V)

Simulation Result

                                                          Cj (pF)
                         VR (V)                                                              %Error
                                                Measurement     Simulation
                                          0.1       1800.000       1791.400                         -0.48
                                          0.2       1650.000       1647.600                         -0.15
                                          0.5       1350.000       1360.900                          0.81
                                            1       1100.000       1097.800                         -0.20
                                            2        830.000         839.765                         1.18
                                            5        550.000         555.040                         0.92
                                           10        390.000         395.610                         1.44
                                           20        280.000         278.258                        -0.62
                                           60        160.000         157.564                        -1.52




                                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
                                                                                                            6

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SPICE MODEL of SG30SC6M (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOTTKY RECTIFIER / STANDARD PART NUMBER: SG30SC6M MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 1
  • 2. Spice Model Parameters PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 2
  • 3. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc SG30SC6M R2 100MEG 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 3
  • 4. Comparison Graph Circuit Simulation Result FORWARD CURRENT:IF(A) 100 10 1 Measurement Simulation 0.1 0 0.5 1 1.5 2 FORWARD VOLTAGE:VF(V) Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 0.2450 0.2445 -0.19 0.2 0.2650 0.2637 -0.49 0.5 0.2950 0.2912 -1.29 1 0.3150 0.3150 -0.01 2 0.3450 0.3448 -0.05 5 0.4050 0.4041 -0.21 10 0.4800 0.4813 0.27 20 0.6100 0.6177 1.25 50 0.9700 0.9966 2.74 100 1.6200 1.6066 -0.83 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 4
  • 5. Capacitance Characteristic Circuit Simulation Result 10n 1.0n 100p 10p 100mV 1.0V 10V 60V I(V2)/(60V/100n) V(N16610) Evaluation Circuit V2 0Vdc R1 100MEG V2 = 60 V1 V1 = 0 U1 TD = 0 SG30SC6M TR = 100ns TF = 100ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 5
  • 6. Comparison Graph Circuit Simulation Result 10000 Measurement Simulation JUNCTION CAPACITANCE 1000 Cj(pF) 100 10 0.1 1 10 REVERSE VOLTAGE:VR(V) Simulation Result Cj (pF) VR (V) %Error Measurement Simulation 0.1 1800.000 1791.400 -0.48 0.2 1650.000 1647.600 -0.15 0.5 1350.000 1360.900 0.81 1 1100.000 1097.800 -0.20 2 830.000 839.765 1.18 5 550.000 555.040 0.92 10 390.000 395.610 1.44 20 280.000 278.258 -0.62 60 160.000 157.564 -1.52 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 6