SPICE MODEL of S60SC4MT (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: S60SC4MT
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Circuit Configuration
U1
S60SC4MT
1 2 3
Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc S60SC4MT
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
100
FORWARD CURRENT:IF(A)
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.2200 0.2193 -0.30
0.2 0.2400 0.2374 -1.07
0.5 0.2600 0.2623 0.88
1 0.2800 0.2822 0.79
2 0.3000 0.3040 1.32
5 0.3400 0.3395 -0.15
10 0.3800 0.3766 -0.90
20 0.4300 0.4325 0.58
50 0.5600 0.5655 0.98
100 0.7600 0.7551 -0.64
300 1.4300 1.4341 0.29
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
10n
1.0n
100p
10p
100mV 1.0V 10V 40V
I(V2)/(40V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 40 V1
V1 = 0 U1
TD = 0 S60SC4MT
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 3650.000 3683.400 0.92
0.2 3350.000 3370.600 0.61
0.5 2750.000 2761.100 0.40
1 2200.000 2219.800 0.90
2 1700.000 1694.800 -0.31
5 1150.000 1127.100 -1.99
10 800.000 810.203 1.28
20 570.000 576.244 1.10
40 410.000 407.580 -0.59
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Characteristic
Circuit Simulation Result
10mA
1.0mA
100uA
10uA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m R2
100MEG
V1
0Vdc U1
S60SC4MT
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
REVERSE CURRENT:IR(mA )
1
0.1
0.01
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(mA)
VR(V) Error (%)
Measurement Simulation
2 0.025 0.024 -4.48
5 0.031 0.032 2.32
10 0.041 0.043 4.00
15 0.055 0.054 -1.12
20 0.072 0.071 -1.39
25 0.099 0.097 -2.48
30 0.135 0.135 0.04
35 0.186 0.191 2.46
40 0.270 0.267 -1.05
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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