This document summarizes the modeling of a Panasonic MA4S111 general purpose rectifier diode. It includes the diode model parameters, forward and reverse characteristics from circuit simulations, and comparisons to measurements. Key points are: - The diode model parameters like saturation current, emission coefficient, series resistance, etc. - Forward current characteristics from 0-1.2V show good agreement with measurements, with errors less than 1%. - Junction capacitance varies from 0.46-0.437pF from 5-80V in simulation and measurement, with errors less than 4%. - Reverse recovery characteristics like trj, trb, trr are modeled within 2% of measurements.

1. Device Modeling Report
COMPONENTS: DIODE/ GENERAL PURPOSE
RECTIFIER/ PROFESSIONAL MODEL
PART NUMBER: MA4S111
MANUFACTURER: Panasonic
Bee Technologies Inc.
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2. Circuit Configuration
U1
MA4S111_P
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
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4. Forward Current Characteristics
Circuit Simulation result
1.0KA
100A
10A
1.0A
100mA
10mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
MA4S111_p
0
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5. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (mA) %Error
Measurement Simulation
0.05 0.483 0.478 -1.04
0.1 0.516 0.512 -0.78
0.2 0.543 0.546 0.55
0.5 0.590 0.591 0.17
1 0.623 0.625 0.32
2 0.660 0.660 0.00
5 0.706 0.708 0.28
10 0.750 0.747 -0.40
20 0.796 0.791 -0.63
50 0.860 0.864 0.47
100 0.930 0.930 0.00
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6. Junction Capacitance Characteristic
Circuit Simulation result
1.2p
1.0p
0.8p
0.6p
0.4p
0.2p
0
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V 110V
- I(X_U1.D_D1)/(100V/10ns)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 100 MA4S111_p
TD = 0
TR = 10ns
TF = 50ns
PW = 5us
PER = 10us
0
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7. Comparison Graph
Circuit Simulation result
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
5 0.460 0.467 1.52
10 0.450 0.463 2.89
20 0.437 0.454 3.89
50 0.437 0.437 0.00
80 0.437 0.424 -2.97
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8. Reverse Recovery Characteristics
Circuit Simulation result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.97us 0.99us 1.01us 1.03us 1.05us 1.07us
I(R1)
Time
Evaluation circuit
R1
50
V1 = -9.5V V1
V2 = 10.54V U1
TD = 0 MA4S111_p
TR = 10n
TF = 1n
PW = 1u
PER = 100u
0
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 3.60 3.70 2.78
trb ns 2.00 2.00 0.00
trr ns 5.60 5.70 1.79
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9. Reverse Recovery Characteristics Reference
Measurement
Trj = 3.60 (ns)
Trb =2.00 (ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Example
Relation between trj and trb
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