SPICE MODEL of XBS104S13R-G (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: XBS104S13R-G
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
0V 200mV 400mV 600mV 800mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS104S13R-G_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
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Measurement
Simulation
Forward Current:IF (A)
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.001 0.210 0.210 0.166
0.002 0.230 0.228 -0.786
0.005 0.253 0.252 -0.342
0.01 0.270 0.271 0.291
0.02 0.290 0.290 -0.033
0.05 0.315 0.317 0.478
0.1 0.340 0.340 0.004
0.2 0.370 0.368 -0.476
0.5 0.420 0.421 0.198
1 0.480 0.480 -0.037
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
200p
150p
100p
50p
0
0V 10V 20V 30V 40V
I(V2)/(40V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 40 V1 U1
V1 = 0 XBS104S13R-G_P
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
200
Measurement
Inter-Terminal Capacity:Ct (pF)
Simulation
150
100
50
0
0 10 20 30 40
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
0 130.500 124.446 -4.64
1 80.000 80.838 1.05
5 44.000 44.561 1.28
10 34.000 33.284 -2.11
15 28.000 27.925 -0.27
20 25.000 24.614 -1.54
25 22.000 22.335 1.52
30 21.000 20.589 -1.96
35 19.000 19.232 1.22
40 18.000 18.169 0.94
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
15mA
10mA
5mA
0mA
-5mA
-10mA
-15mA
-20mA
1.84us 1.92us 2.00us 2.08us 2.16us 2.24us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.27V
V1 = -0.78V
TD = 0ns V1 U1
TR = 1ns XBS104S13R-G_P
PW = 2us
TF = 1ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 25.000 24.900 -0.40
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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8. Reverse Characteristic
Circuit Simulation Result
100uA
10uA
1.0uA
100nA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc XBS104S13R-G_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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9. Comparison Graph
Circuit Simulation Result
100.000
Measurement
Simulation
Reverse Current:IR (uA)
10.000
1.000
0.100
0 10 20 30 40
Reverse Voltage:VR (V)
Simulation Result
IR (uA)
VR (V) %Error
Measurement Simulation
1 0.4700 0.4565 -2.86
5 0.7100 0.7272 2.42
10 0.9200 0.9583 4.17
15 1.2000 1.1458 -4.52
20 1.4400 1.3714 -4.76
25 1.8000 1.7167 -4.63
30 2.3000 2.2620 -1.65
35 3.0500 3.0894 1.29
40 4.4000 4.2796 -2.74
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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