SPICE MODEL of XBS104S14R (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / STANDARD
PART NUMBER: XBS104S14R
MANUFACTURER: TOREX SEMICONDUCTOR
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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3. Forward Current Characteristic
Circuit Simulation Result
1.0A
100mA
10mA
1.0mA
0V 200mV 400mV 600mV
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 D1
0Vdc DXBS104S14R
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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4. Comparison Graph
Circuit Simulation Result
1
Measurement
Forward Current:IF (A) Simulation
0.1
0.01
0.001
0 0.2 0.4 0.6
Forward Voltage:VF (V)
Simulation Result
VF (V)
IF (A) %Error
Measurement Simulation
0.001 0.215 0.215 0.03
0.002 0.234 0.233 -0.37
0.005 0.258 0.257 -0.33
0.01 0.275 0.275 0.16
0.02 0.293 0.294 0.43
0.05 0.320 0.321 0.28
0.1 0.345 0.343 -0.56
0.2 0.370 0.370 0.00
0.5 0.423 0.420 -0.71
1 0.480 0.482 0.34
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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5. Capacitance Characteristic
Circuit Simulation Result
200p
150p
100p
50p
0
0V 10V 20V 30V 40V
I(V2)/(45V/10n)
V(N16610)
Evaluation Circuit
V2
0Vdc
V2 = 45 V1 D1
V1 = 0 DXBS104S14R
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 50us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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6. Comparison Graph
Circuit Simulation Result
200
Measurement
Simulation
Inter-Terminal Capacity:Ct (pF)
150
100
50
0
0 10 20 30 40
Reverse Voltage:VR(V)
Simulation Result
Ct (pF)
VR (V) %Error
Measurement Simulation
1 80.000 81.335 1.67
2 62.500 63.877 2.20
5 45.000 44.500 -1.11
10 33.500 33.186 -0.94
20 24.500 24.516 0.07
30 20.400 20.515 0.56
40 18.000 18.061 0.34
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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7. Reverse Recovery Characteristic
Circuit Simulation Result
20mA
10mA
0A
-10mA
-20mA
1.80us 1.88us 1.96us 2.04us 2.12us 2.20us
I(R1)
Time
Evaluation Circuit
R1
100
V2 = 1.27V
V1 = -0.74V
TD = 3.0ns V1 D1
TR = 1.5ns DXBS104S14R
PW = 2us
TF = 1.0ns
PER = 50us
0
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trr ns 25.000 25.518 2.07
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
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