Device Modeling Report for Schottky Rectifier
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SPICE MODEL of XBS024S15R-G (Standard Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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Device Modeling Report for Schottky Rectifier
- 1. Device Modeling Report COMPONENTS: DIODE/ SCHOTTKY RECTIFIER / STANDARD PART NUMBER: XBS024S15R-G MANUFACTURER: TOREX SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 1
- 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 2
- 3. Forward Current Characteristic Circuit Simulation Result 1.0A 100mA 10mA 1.0mA 100uA 0V 200mV 400mV 600mV I(R1) V_V1 Evaluation Circuit R1 0.01m V1 D1 0Vdc DXBS024S15R-G 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 3
- 4. Comparison Graph Circuit Simulation Result 1000 Measurement Forward Current:IF (mA) Simulation 100 10 1 0.1 0 0.2 0.4 0.6 Forward Voltage:VF (V) Simulation Result VF (V) IF (mA) %Error Measurement Simulation 0.1 0.212 0.212 0.00 0.2 0.229 0.230 0.56 0.5 0.253 0.254 0.33 1 0.271 0.272 0.48 2 0.291 0.291 0.07 5 0.320 0.317 -0.85 10 0.342 0.340 -0.71 20 0.368 0.366 -0.67 50 0.410 0.413 0.62 100 0.465 0.464 -0.11 200 0.540 0.540 -0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 4
- 5. Capacitance Characteristic Circuit Simulation Result 50p 40p 30p 20p 10p 0 0V 10V 20V 30V 40V I(V2)/(45V/10n) V(N16610) Evaluation Circuit V2 0Vdc V2 = 45 V1 D1 V1 = 0 DXBS024S15R-G TD = 0 TR = 10ns TF = 10ns PW = 10us PER = 50us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 5
- 6. Comparison Graph Circuit Simulation Result 50 Measurement Simulation Inter-Terminal Capacity:Ct (pF) 40 30 20 10 0 0 10 20 30 40 Reverse Voltage:VR(V) Simulation Result Ct (pF) VR (V) %Error Measurement Simulation 1 12.100 12.172 0.60 2 10.150 10.287 1.35 5 7.455 7.422 -0.44 10 5.450 5.419 -0.57 20 3.750 3.815 1.74 30 3.050 3.067 0.56 40 2.650 2.618 -1.19 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 6
- 7. Reverse Recovery Characteristic Circuit Simulation Result 20mA 10mA 0A -10mA -20mA 1.968us 1.984us 2.000us 2.016us 2.032us 2.048us I(R1) Time Evaluation Circuit R1 100 V2 = 1.34V V1 = -0.68V TD = 3.0ns V1 D1 TR = 1.5ns DXBS024S15R-G PW = 2us TF = 1.0ns PER = 50us 0 Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trr ns 4.000 4.054 1.35 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 7