SPICE MODEL of SG10SC4M (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: SG10SC4M
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Circuit Configuration
U1
SG10SC4M
1 2 3
Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
2

3. Forward Current Characteristic
Circuit Simulation Result
50A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc SG10SC4M
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
FORWARD CURRENT:IF(A)
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.2750 0.2765 0.55
0.2 0.2950 0.2962 0.40
0.5 0.3250 0.3251 0.03
1 0.3500 0.3518 0.52
2 0.3850 0.3870 0.51
5 0.4600 0.4623 0.50
10 0.5600 0.5662 1.11
20 0.7450 0.7562 1.50
50 1.3100 1.2958 -1.08
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
4

5. Capacitance Characteristic
Circuit Simulation Result
10n
1.0n
100p
10p
100mV 1.0V 10V 40V
I(V2)/(40V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 40 V1
V1 = 0 U1
TD = 0 SG10SC4M
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 680.000 675.426 -0.67
0.2 620.000 624.494 0.72
0.5 520.000 522.079 0.40
1 430.000 427.105 -0.67
2 330.000 332.351 0.71
5 225.000 226.890 0.84
10 165.000 165.837 0.51
20 120.000 119.820 -0.15
40 89.000 86.430 -2.89
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Characteristic
Circuit Simulation Result
1.0mA
100uA
10uA
1.0uA
0V 10V 20V 30V 40V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m R2
100MEG
V1
0Vdc U1
SG10SC4M
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
REVERSE CURRENT:IR(mA )
0.1
0.01
0.001
0 5 10 15 20 25 30 35 40
REVERSE VOLTAGE：VR(V)
Simulation Result
IR(mA)
VR(V) Error (%)
Measurement Simulation
2 0.0030 0.0030 -0.51
5 0.0040 0.0040 1.04
10 0.0057 0.0057 -0.75
15 0.0075 0.0075 0.07
20 0.0100 0.0101 0.68
25 0.0140 0.0138 -1.27
30 0.0190 0.0193 1.32
35 0.0270 0.0268 -0.62
40 0.0370 0.0370 0.12
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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