SPICE MODEL of CUS521 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Schottky Barrier Diode
PART NUMBER: CUS521
MANUFACTURER: TOSHIBA
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
CUS521_P
DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. Forward Current Characteristics
Circuit Simulation result
1.0A
100mA
10mA
1.0mA
100uA
10uA
1.0uA
0V 100mV 200mV 300mV 400mV 500mV 600mV
I(R1)
V_V1
Evaluation circuit
R1
0.001m
V1 U1
CUS521_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (mA) %Error
Measurement Simulation
0.1 0.152 0.150 -1.16
0.2 0.168 0.169 0.24
0.5 0.190 0.193 1.78
1 0.211 0.211 0.14
2 0.231 0.231 -0.25
5 0.261 0.257 -1.38
10 0.279 0.278 -0.16
20 0.306 0.302 -1.14
50 0.343 0.343 0.06
100 0.379 0.389 2.76
200 0.467 0.463 -0.98
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Reverse Current Characteristic
Circuit Simulation result
1.0mA
100uA
10uA
1.0uA
100nA
0V 5V 10V 15V 20V 25V 30V
I(V2)
V_V1
Evaluation circuit
V2
V1 U1
CUS521_P
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Comparison Graph
Circuit Simulation result
1000
Measurement
Simulation
Reverse Current, IR (A)
100
10
1
0.1
0 5 10 15 20 25 30
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
2 0.520 0.541 4.04
5 0.572 0.567 -0.87
10 0.640 0.618 -3.44
20 0.760 0.762 0.26
30 0.980 0.984 0.41
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Junction Capacitance Characteristic
Circuit Simulation result
100p
10p
1.0p
0V 5V 10V 15V 20V 25V 30V
I(V2)/(30V/100ns)
V(R)
Evaluation circuit
V2
R
0V
V1 = 0 V1 U1
V2 = 30 CUS521_P
TD = 0
TR = 100ns
TF = 100ns
PW = 100us
PER = 10ms
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Comparison Graph
Circuit Simulation result
100
Measurement
Simulation
Capacitance, C (pF)
10
1
0 5 10 15 20 25 30
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.2 23.200 23.473 1.18
0.5 19.600 19.451 -0.76
1 15.600 15.558 -0.27
2 11.500 11.675 1.52
5 7.250 7.318 0.94
10 4.850 5.033 3.77
20 3.500 3.382 -3.37
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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