SPICE MODEL of SG30JC6M (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS:
DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL
PART NUMBER: SG30JC6M
MANUFACTURER: SHINDENGEN
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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2. Circuit Configuration
U1
SG30JC6M
1 2 3
Spice Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
2

3. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc SG30JC6M
R2
100MEG
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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4. Comparison Graph
Circuit Simulation Result
FORWARD CURRENT:IF(A) 100
10
1
Measurement
Simulation
0.1
0 0.5 1 1.5 2
FORWARD VOLTAGE：VF(V)
Simulation Result
Vfwd (V)
Ifwd (A) %Error
Measurement Simulation
0.1 0.3300 0.3229 -2.16
0.2 0.3450 0.3426 -0.68
0.5 0.3750 0.3718 -0.85
1 0.4000 0.3986 -0.35
2 0.4350 0.4332 -0.40
5 0.5000 0.5002 0.05
10 0.5700 0.5773 1.28
20 0.7000 0.6978 -0.31
50 1.0000 1.0003 0.03
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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5. Capacitance Characteristic
Circuit Simulation Result
10n
1.0n
100p
10p
100mV 1.0V 10V 60V
I(V2)/(60V/100n)
V(N16610)
Evaluation Circuit
V2
0Vdc R1
100MEG
V2 = 60 V1
V1 = 0 U1
TD = 0 SG30JC6M
TR = 100ns
TF = 100ns
PW = 100us
PER = 500us
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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6. Comparison Graph
Circuit Simulation Result
10000
Measurement
Simulation
JUNCTION CAPACITANCE
1000
Cj(pF)
100
10
0.1 1 10
REVERSE VOLTAGE:VR(V)
Simulation Result
Cj (pF)
VR (V) %Error
Measurement Simulation
0.1 1400.000 1422.000 1.57
0.2 1300.000 1311.500 0.88
0.5 1100.000 1091.900 -0.74
1 870.000 886.278 1.87
2 680.000 683.063 0.45
5 460.000 457.254 -0.60
10 330.000 328.829 -0.35
20 230.000 234.136 1.80
60 135.000 135.035 0.03
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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7. Reverse Characteristic
Circuit Simulation Result
1.0mA
100uA
10uA
1.0uA
100nA
0V 20V 40V 60V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m R2
100MEG
V1
0Vdc U1
SG30JC6M
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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8. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
REVERSE CURRENT:IR(mA )
0.1
0.01
0.001
0.0001
0 10 20 30 40 50 60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Simulation Result
IR(mA)
VR(V) Error (%)
Measurement Simulation
2 0.00053 0.0005 -3.89
10 0.00105 0.0011 4.55
20 0.00150 0.0015 -0.24
30 0.00205 0.0020 -0.83
40 0.00330 0.0033 -1.32
50 0.00560 0.0057 2.03
60 0.01000 0.0100 -0.45
All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
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