This document summarizes the modeling and simulation of a MOSFET transistor. It includes: 1) Details of the MOSFET part being modeled, including manufacturer, part number, and model parameters. 2) Results of circuit simulations characterizing key electrical properties of the MOSFET, including transconductance, capacitance, switching time, and forward/reverse current. 3) Comparisons of the simulation results to manufacturer measurements, showing good agreement within a few percent error. 4) Explanations of the evaluation circuits used in the simulations and definitions of recovery time parameters.

1. Device Modeling Report
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: 2SK4062LS
MANUFACTURER: SANYO
REMARK: Body Diode (Professional Model)
Bee Technologies Inc.
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
20
Measurement
18
Simulation
16
14
12
gfs(S)
10
8
6
4
2
0
0.0 2.0 4.0 6.0 8.0 10.0
Drain Current ID (A)
Comparison table
gfs(S)
Id(A) Error (%)
Measurement Simulation
1 6.050 6.302 4.16
2 8.400 8.687 3.41
5 13.200 13.076 -0.94
10 17.800 17.542 -1.45
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4. Vgs-Id Characteristic
Circuit Simulation result
50A
40A
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1 V2
2SK4062LS
V1 20
0Vdc
0
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.300 5.451 2.85
2 5.550 5.584 0.62
5 5.900 5.859 -0.70
10 6.200 6.184 -0.26
20 6.650 6.673 0.35
50 7.750 7.746 -0.05
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6. Rds(on) Characteristic
Circuit Simulation result
9.0A
8.0A
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 2.5V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SK4062LS 0Vdc
V1
10
0
Simulation Result
ID = 9A, VGS = 15V Measurement Simulation Error (%)
R DS (on)  0.2400 0.2400 0.00
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7. Gate Charge Characteristic
Circuit Simulation result
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0 10n 20n 30n 40n 50n
V(W1:3)
Time*1mA
Evaluation circuit
I2
D2
U1 Dbreak 18
2SK4062LS
PER = 1000u W1
PW = 600u +
TF = 5n VDD
TR = 5n -
TD = 0 I1 W
I2 = 1m IOFF = 1mA 200
I1 = 0 ION = 0uA
0
Simulation Result
VDD=200V, ID=18A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 15.000 15.023 0.15
Qgd nC 15.000 15.056 0.37
Qg nC 39.000 39.279 0.72
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
5.000 529.500 529.450 -0.01
10.000 386.000 385.630 -0.10
15.000 309.000 312.540 1.15
20.000 272.000 267.030 -1.83
25.000 235.500 235.440 -0.03
30.000 210.000 211.985 0.95
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9. Switching Time Characteristic
Circuit Simulation result
14V
12V
10V
8V
6V
4V
2V
0V
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us
V(U1:G) V(U1:D)/20
Time
Evaluation circuit
L2 RL
50nH 22
R1 L1 U1
2SK4062LS
VDD
V1 = 0 30nH 202Vdc
V2 = 20 V2 50
TD = 1u
TR = 5n R2
TF = 5n 50
PW = 10u
PER = 20u
0
Simulation Result
ID=9A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
td(on) ns 52.000 52.059 0.11
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10. Output Characteristic
Circuit Simulation result
60A
15V
8V
50A 10V
40A
30A
20A
10A
6V
0A
VGS=5V
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
2SK4062LS V2
V1 30
0
0
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11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
VSD
U1
2SK4062LS
0
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.01 0.5400 0.5401 0.02
0.02 0.5600 0.5603 0.05
0.05 0.5850 0.5872 0.37
0.1 0.6100 0.6078 -0.36
0.2 0.6300 0.6291 -0.15
0.5 0.6600 0.6591 -0.14
1 0.6850 0.6849 -0.01
2 0.7150 0.7166 0.23
5 0.7750 0.7780 0.38
10 0.8600 0.8561 -0.46
20 0.9900 0.9922 0.22
30 1.1200 1.1199 -0.01
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13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
12us 14us 16us 18us 20us 22us 24us 26us 28us 30us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.40v V1
V2 = 10.60v
TD = 0us U1
TR = 10ns D2SK4062LS_P
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj us 0.480 0.476 -0.89
trb us 0.520 0.521 0.20
trr us 1.000 0.997 -0.32
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14. Reverse Recovery Characteristic Reference
Measurement
Trj=0.48(us)
Trb=0.52(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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