SPICE MODEL of 2SK2410 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: 2SK2410
MANUFACTURER: NEC Corporation
REMARK: Body Diode (Standard) /
ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Transconductance Characteristic s
Circuit Simulation Result
1000
Measurement
Simulation
TRANSCONDUCTANCE Gfs(s)
100
10
1
1 10 100
DRIAN CURRENT ID (A)
Comparison table
gfs(s)
Id(A) Error(%)
Measurement Simulation
1 7.7125 7.8125 1.2966
2 10.8487 10.6952 -1.4148
5 15.9856 15.8730 -0.7043
10 21.2215 21.0970 -0.5867
20 27.8542 27.4725 -1.3701
50 37.6421 37.4251 -0.5764
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Vgs-Id Characteristics
Circuit Simulation Result
50A
10A
1.0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(V2)
V_VGS
Evaluation circuit
V2
U1 2SK2410
VDS
10Vdc
VGS
10Vdc
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
ID - Drain Current -A
10
1
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Comparison table
gfs(s)
Id(A) Measurement Simulation Error(%)
1 2.0500 2.0482 -0.0878
2 2.1500 2.1672 0.8000
5 2.4000 2.4136 0.5667
10 2.7000 2.7074 0.2741
20 3.1500 3.1552 0.1651
50 4.1500 4.1372 -0.3084
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. *Rds(on) Characteristic
Circuit Simulation result
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(V2)
V_VDD
Evaluation circuit
V2
U1
2SK2410
VDD
10Vdc
VGS
10Vdc
0 0
0
Simulation Result
ID=15A, VGS=10V Measurement Simulation Error (%)
R DS (on) 31.000 m 30.985 m -0.0484
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 10n 20n 30n 40n 50n 60n 70n 80n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
U1 2SK2410
I1
D1
Dbreak 30Adc
W1
+
-
I2 W VD
ION = 0A 48Vdc
IOFF = 1.1mA
0
Simulation Result
VDD=48V,ID=30A
Measurement Simulation Error (%)
,VGS=10V
Qgs 4.800 nC 4.684 nC -2.402
Qgd 20.000 nC 20.030 nC 0.150
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
1 1120.000 1175.000 4.911
2 900.000 922.300 2.478
5 635.000 643.800 1.386
10 480.000 483.000 0.625
20 360.000 358.610 -0.386
50 235.000 240.660 2.409
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Switching Time Characteristic
Circuit Simulation result
12V
11V
10V
9V
8V
7V
6V
5V
4V
3V
2V
1V
0V
0.90us 0.95us 1.00us 1.05us 1.10us 1.15us 1.20us
V(L3:2) V(3)*0.208
Time
Evaluation circuit
Vsense RL
3
1.6
U2 2SK2410
V1 = 0
R1 L3
V2 = 20 2
1nH
TD = 1u 10 VD
48Vdc
TR = 1n V1
R2
TF = 1n
10
PW = 10u
PER = 10m
0
Simulation Result
ID=15A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
ton 22.000 ns 21.999 ns -0.004
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Output Characteristic
Circuit Simulation result
100A
-10.0V
90A
-6.0V
80A
70A
60A VGS=4.0V
50A
40A
30A
20A
10A
0A
0V 2V 4V 6V 8V 10V 12V
I(V2)
V_VDS
Evaluation circuit
V2
U1 2SK2410
VDS
10Vdc
VGS
10Vdc
0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
1.0KA
100A
10A
1.0A
0V 0.5V 1.0V 1.5V 2.0V
I(V2)
V_VDS
Evaluation Circuit
V2
VGS
0Vdc
VDS
0Vdc
U1 2SK2410_PRO
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
Diode Forward Current - A
100
10
1
0 1 2
Source to Drain Voltage - V
Simulation Result
VDS(V)
ISD(A) Measurement Simulation %Error
1 0.7450 0.7404 -0.6174
2 0.7600 0.7616 0.2105
5 0.8000 0.8069 0.8625
10 0.8700 0.8692 -0.0920
20 0.9900 0.9828 -0.7273
50 1.3000 1.3050 0.3846
100 1.8300 1.8284 -0.0874
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
7.48us 7.56us 7.64us 7.72us 7.80us 7.88us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.3V
U3
V2 = 10.7
2SK2410
TD = 40n V1
TR = 10n
TF = 10n
PW = 7.5us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 32.000 ns 31.98 ns -0.0625
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic Reference
Trj=32(ns)
Trb=88(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(V2)
V_VGS
Evaluation Circuit
U1
V2 2SK2410
ID
0Adc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007