SPICE MODEL of TK40J60T (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TK40J60T
MANUFACTURER: TOSHIBA
Body Diode (Professional)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Equivalent Circuit
D
S
- -
+ +
R3
S2 10MEG DGD
R1 CGD
10M S1
+ +
- -
S M1
G
S
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
20
Measurement
Simulation
15
gfs
10
5
0
0 1 2 3 4 5
ID : Drain Current A
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.010 0.320 0.333 4.063
0.020 1.000 1.000 0.000
0.050 1.660 1.667 0.422
0.100 2.400 2.500 4.167
0.200 3.222 3.333 3.445
0.500 6.000 6.250 4.167
1.000 8.333 8.333 0.000
2.000 11.111 11.111 0.000
5.000 16.667 16.667 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
80A
64A
48A
32A
16A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
TK40J60T
Vv ariable
10Vdc
10Vdc
V2
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
80
Measurement
Simulation
64
ID : Drain Current A
48
32
16
0
0 2 4 6 8 10
VGS : Gate to Source Voltage V
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.000 4.850 4.950 2.062
1.000 5.000 5.201 4.020
2.000 5.150 5.307 3.049
5.000 5.430 5.524 1.731
10.000 5.750 5.781 0.539
20.000 6.100 6.175 1.230
50.000 7.000 7.067 0.957
80.000 7.750 7.792 0.542
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
30A
20A
10A
0A
0V 0.5V 1.0V 1.5V 2.0V
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
U1
TK40J60T
VDS
10Vdc
0Vdc
VGS
0
Simulation Result
ID=20A, VGS=10V Measurement Simulation Error (%)
R DS (on) () 0.068 0.068 0.074
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mS
Evaluation circuit
V2
0Vdc
U1
PER = 1000u TK40J60T Dbreak
PW = 600u W1
TF = 10n + D1
TR = 10n I2
-
TD = 0 40Adc
I2 = 1m W
I1 = 0 I1 IOFF = 0.1mA
ION = 0uA
V1
400Vdc
0
Simulation Result
VDD=400V,ID=40A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nc) 25.000 25.000 0.000
Qgd(nc) 22.000 22.018 0.082
Qg(nc) 68.000 68.070 0.103
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(nF)
VDS(V) Error(%)
Measurement Simulation
0.100 26.400 26.350 -0.19
0.200 25.500 25.510 0.04
0.500 21.600 21.610 0.05
1.000 18.900 18.920 0.11
2.000 16.650 16.600 -0.30
5.000 12.460 12.465 0.04
10.000 8.910 8.915 0.06
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
12V
10V
0V
1.8us 2.0us 2.2us 2.4us 2.6us 2.8us
V(2) V(3)/30
Time
Evaluation circuit
3 L2
RL
R1 L1 2 U1
TK40J60T 15
V1 = 0 50
V2 = 20 V2 VDD
TD = 2u R2 300Vdc
TR = 1n
TF = 1n 50
PW = 2u
PER = 10u
0
Simulation Result
ID=20A, VDD=300V
Measurement Simulation Error(%)
VGS=10V
Ton(ns) 120.000 125.800 4.833
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
80A
10V
8.0V
7.5V
64A
48A 7.0V
32A 6.5V
16A 6.0V
VGS=5.5V
0A
0V 10V 20V 30V 40V 50V
I(Vdsense)
V_Vvariable
Evaluation circuit
Vdsense
0Vdc
U1
TK40J60T
Vv ariable
10Vdc
0Vdc
Vstep
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
0V 0.3V 0.6V 0.9V 1.2V 1.5V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 U1
0Vdc DTK40J60T
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100.00
Measurement
Simulation
Drain reverse current IDR(A)
10.00
1.00
0 0.3 0.6 0.9 1.2 1.5
Drain Source voltage VDS(V)
Simulation Result
VDS(V) VDS(V)
IDR(A) %Error
Measurement Simulation
1.000 0.680 0.681 0.147
2.000 0.710 0.710 -0.028
5.000 0.760 0.759 -0.132
10.000 0.820 0.815 -0.610
20.000 0.900 0.905 0.556
50.000 1.140 1.139 -0.088
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
200mA
0A
-200mA
-400mA
14us 16us 18us 20us 22us 24us 26us 28us 30us 32us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.5V V1
V2 = 10.6V U1
TD = 0.8u DTK40J60T
TR = 10ns
TF = 19ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
Trj(us) 1.480 1.481 0.061
Trj(us) 1.640 1.646 0.372
Trj(us) 3.120 3.127 0.224
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Trj=1.48(us)
Trb=1.64(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007