SPICE MODEL of 2SK4042 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK4042
MANUFACTURER: TOSHIBA
REMARK: N Channel Model
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. Circuit Configuration
2
1
3
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Transconductance Characteristic
Circuit Simulation Result
9
Measurement
Simulation
8
TRANSCONDUCTANCE GFS(s)
7
6
5
4
3
2
0 2 4 6 8 10
DRIAN CURRENT ID (A)
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
1 2.342 2.452 4.697
2 3.731 3.853 3.264
5 5.760 5.810 0.862
10 7.930 7.966 0.445
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Vgs-Id Characteristic
Circuit Simulation result
10A
5A
0A
0V 2V 4V 6V 8V 10V
I(V2)
V_VGS
Evaluation circuit
V2
U1 2SK4042
VDS
10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. Comparison Graph
Circuit Simulation Result
10
Measurement
9 Simulation
8
7
Drain Current ID (A)
6
5
4
3
2
1
0
4 5 6 7 8
Gate - Source Voltage VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 5.200 5.350 2.885
2 5.600 5.674 1.325
5 6.300 6.319 0.298
10 7.050 7.064 0.200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Rds(on) Characteristic
Circuit Simulation result
4.0A
3.6A
3.2A
2.8A
2.4A
2.0A
1.6A
1.2A
0.8A
0.4A
0A
0V 0.56V 1.12V 1.68V 2.24V 2.80V
I(V2)
V_VDS
Evaluation circuit
V2
U1 2SK4042
VDS
8.5Vdc
VGS
10Vdc
0
Simulation Result
ID=4A, VGS=10V Measurement Simulation Error (%)
R DS (on)  0.7 0.7 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 5n 10n 15n 20n 25n 30n 35n 40n 45n 50n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
U3
2SK4042
I1
D1
W1 Dbreak 8Adc
+
TD = 0
-
I2 ION = 0A W
IOFF = 1mA VD
400Vdc
0
Simulation Result
VDD=400V,ID=8A,
Measurement Simulation Error (%)
VGS=10V
Qgs nc 6.000 6.018 0.300
Qgd nc 13.000 13.056 0.431
Qg nc 28.000 22.492 -19.671
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.1 1190 1200 0.840
0.2 1150 1120 -2.609
0.5 1050 1020 -2.857
1 900 895 -0.556
2 700 698 -0.286
5 400 395 -1.250
10 240 250 4.167
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Switching Time Characteristic
Circuit Simulation result
20V
18V
16V
14V
12V
10V
8V
6V
4V
2V
0V
-2V
-4V
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
V(3)/20 V(L3:1)*1
Time
Evaluation circuit
Vsense RL
3
50
U3
2SK4042
R2 L3 2
V1 = 0 50 VD
V2 = 20 V1 200Vdc
TD = 1u R1
TR = 10n
TF = 10n 50
PW = 10u
PER = 10m
0
Simulation Result
ID=4A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
ton ns 45.000 56.000 24.444
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. Output Characteristic
Circuit Simulation result
12A
7.0V
10V 7.5V
8.0V
10A
8A
6.5V
6A
6V
4A
2A
5.5V
VGS=5V
0A
0V 10V 20V 30V 40V 50V
I(V2)
V_VDS
Evaluation circuit
V2
U3
2SK4042
VDS
10Vdc
VGS
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1
0Vdc U1 2SK4042
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Reverse Drain Current- IDR (A)
10
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source Voltage VDS (V)
Simulation Result
VDS(V)
IDR(A) %Error
Measurement Simulation
0.1 0.640 0.639 -0.234
0.2 0.660 0.660 0.061
0.5 0.695 0.694 -0.216
1 0.725 0.725 -0.028
2 0.760 0.766 0.842
5 0.850 0.848 -0.200
10 0.950 0.946 -0.474
20 1.100 1.102 0.200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
9.7us 9.9us 10.1us 10.3us 10.5us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v V1
V2 = 10.7v
TD = 0
TR = 10ns
TF = 10ns
PW = 10us
PER = 100us
U1 2SK4042
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trr ns 210.00 211.00 0.476
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Reverse Recovery Characteristic Reference
Measurement
Trj=62.00(ns)
Trb=148.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 20V 40V 60V 80V 100V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
V1 open open
0Vdc
U1 2SK4042
Ropen
100MEG
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

17. Zener Voltage Characteristic Reference
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007