SPICE MODEL of TPCP8R01 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCP8R01
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
U?
TPCP8R01
Circuit Configuration
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
0.5 1.46 1.426 -2.33
1 1.96 1.935 -1.28
2 2.56 2.581 0.82
4 3.33 3.369 1.17
VDS=10V

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4
V_VGS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
-I(VDS)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
VGS
0
U1
TPCP8R01
G
VDS
10V
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
0.1 2.000 2.015 0.75
0.2 2.140 2.138 -0.09
0.5 2.400 2.391 -0.37
1 2.700 2.688 -0.44
2 3.120 3.129 0.29
5 4.120 4.082 -0.92
VDS=10V

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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VGS
10V
0
U1
TPCP8R01
G
VDS
V_VDS
0V 48mV 96mV 144mV 192mV 230mV
-I(VDS)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(A), ID=1(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 230 230.140 0.06

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7
V_VDS
0V 2V 4V 6V 8V 10V
-I(VDS)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
VGS
0
G
U1
TPCP8R01
VDS
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=2.5V
3.0
3.5
3.75
4
10, 8
6
5

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 150 150 0.00
0.5 120 118.8 -1.00
1 98 100 2.04
5 60 59 -1.67
10 48 45.82 -4.54
50 24 24.8 3.33
Simulation
Measurement

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Time*1m
0s 0.5ns 1.5ns 2.5ns 3.5ns 4.5ns
V(W1:3)
0V
2V
4V
6V
8V
10V
12V
U1
TPCP8R01
0
D1
DMod
ID
2A
VDD
48Vdc
-
+
W1
ION = 0
IOFF = 1mA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=48(V), VGS=10(V), ID=2(A)
Parameter Unit Measurement Simulation %Error
Qgs nc 0.98 0.983 0.31
Qgd nc 1.4 1.409 0.64
Qg nc 5 4.57 -8.60

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Time
1.90us 2.10us 2.30us 2.50us 2.70us
V(G) V(D)/3
0V
5V
10V
15V
20V
U1
TPCP8R01
D
RL
30
VDD
30V
V1TD = 2u
TF = 20n
PW = 5u
PER = 500u
V1 = 0
TR = 20n
V2 = 20
0
L2
50nH
1 2 D
L1
30nH
12
R2
50
G
R1
50
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=30(V), VGS=0/10(V), ID=1(A)
Parameter Unit Measurement Simulation %Error
ton ns 210 210 0

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V_VDS
0V -0.4V -0.8V -1.2V -1.6V -2.0V -2.4V
I(VDS)
100mA
1.0A
10A
VDS
0
U1
TPCP8R01
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.667 0.670 0.45
0.2 0.720 0.717 -0.42
0.5 0.800 0.795 -0.63
1 0.867 0.875 0.92
2 1.000 0.997 -0.30
5 1.293 1.285 -0.62

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Time
8.4us 9.2us 10.0us 10.8us 11.6us 12.4us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
U1
TPCP8R01
V1TD = 100ns
TF = 15ns
PW = 10us
PER = 1ms
V1 = -9.2V
TR = 15ns
V2 = 10.7V
R1
50
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 18 17.94 -0.33

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Reverse Recovery Characteristics Reference
Trj = 18(ns)
Trb = 272(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement

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V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
VGS
0
U1
TPCP8R01
R1
1G
ESD PROTECTION DIODE
Zener Voltage Characteristics
Circuit Simulation result
Evaluation circuit

16. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
16
Zener Voltage Characteristics Reference
IZ = 1(mA)
VZ = 24.75(V) at IZ=1mA
Measurement

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ZENER DIODE MODEL
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
TT Transit Time

18. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
18
V_Vz
0V 10V 20V 30V 40V 50V
-I(Vz)
1.0uA
10uA
100uA
1.0mA
10mA
100mA
Vz
0
U1
TPCP8R01
Reverse Characteristics
Circuit Simulation result
Evaluation circuit

19. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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0.001
0.01
0.1
1
10
0 10 20 30 40 50
ZENERCURRENTIZ(mA)
ZENER VOLTAGE VZ (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation result
Comparison table
IZ (mA)
VZ (V)
%Error
Measurement Simulation
0.001 41.910 41.808 -0.24
0.01 42.059 41.900 -0.38
0.1 42.088 41.904 -0.44
1 42.118 41.945 -0.41
2 42.147 41.989 -0.37
5 42.176 42.046 -0.31
10 42.209 42.127 -0.19
20 42.294 42.277 -0.04

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V(F)
0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I_IF
1.0uA
10uA
100uA
1.0mA
10mA
100mA
0
F
IF
U1
TPCP8R01
Forward Characteristics
Circuit Simulation result
Evaluation circuit

21. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
21
0.001
0.01
0.1
1
10
0.5 0.6 0.7 0.8 0.9 1.0
FORWARDCURRENTIF(mA)
FORWARD VOLTAGE VF (V)
Measurement
Simulation
Comparison Graph
Simulation result
Comparison table
IF (mA)
VF (V)
%Error
Measurement Simulation
0.001 0.528 0.525 -0.57
0.01 0.589 0.589 0.00
0.1 0.651 0.654 0.46
1 0.714 0.718 0.56
10 0.787 0.786 -0.13
20 0.812 0.809 -0.37
50 0.849 0.847 -0.24
100 0.885 0.887 0.23

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V(z)
1.0V 10V 100V
-I(Vz)/(40V/1us)
0
4p
8p
12p
16p
20p
24p
z
Vz
TD = 0
TF = 10ns
PW = 10us
PER = 50us
V1 = 0
TR = 1us
V2 = 40
0
U1
TPCP8R01
Capacitance Characteristics
Circuit Simulation result
Evaluation circuit

23. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
23
0
4
8
12
16
20
24
1 10 100
CapacitanceCj(pF)
ZENER VOLTAGE VZ (V)
Measurement
Simulation
Comparison Graph
Simulation result
Comparison table
VZ (V)
Cj (pF)
%Error
Measurement Simulation
1 18.900 18.936 0.19
2 16.120 16.102 -0.11
5 12.500 12.472 -0.22
10 10.070 10.073 0.03
20 8.040 8.067 0.34
40 6.375 6.435 0.94