This document provides a 14-page report summarizing the modeling and simulation of the electrical characteristics of a MOSFET transistor. It includes modeling parameters, simulation results comparing measurements to simulations, and graphs of key characteristics like transconductance, output characteristics, switching times, and reverse recovery. The report aims to validate the accuracy of the simulated model against real-world measurements of the transistor.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPH4R606NH
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics
Circuit Simulation result
Comparison table
ID (A)
gfs (S)
%Error
Measurement Simulation
2 13.226 13.299 0.55
5 22.450 22.507 0.25
10 32.790 32.691 -0.30
20 47.550 47.627 0.16
50 78.980 78.947 -0.04
60 87.650 87.477 -0.20
VDS=10V

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V_VGS
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
I(U1:5)
0A
12A
24A
36A
48A
60A
VGS
V1
10V
0
U1
TPH4R606NH
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph
Circuit Simulation result
Comparison table
ID (A)
VGS (V)
%Error
Measurement Simulation
1 3.885 3.918 0.86
2 3.966 3.999 0.83
5 4.172 4.160 -0.31
10 4.345 4.337 -0.18
20 4.607 4.584 -0.50
50 5.033 5.059 0.52
60 5.138 5.179 0.80
VDS=10V

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VGS
10V
0
V1
U1
TPH4R606NH
V_V1
0V 10mV 20mV 30mV 40mV 50mV 60mV 70mV 80mV
I(U1:5)
0A
4A
8A
12A
16A
20A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VGS=10(V), ID=16(A)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 3.800 3.798 -0.05

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V_V1
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(U1:5)
0A
8A
16A
24A
32A
40A
VGS
0
V1
U1
TPH4R606NH
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS = 4.4V
4.5
6.510
5
5.5 5.2
4.6
4.7
4.8

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Capacitance Characteristics
Simulation result
Comparison table
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 2900.000 2860.580 -1.36
0.2 2850.000 2838.000 -0.42
0.5 2790.000 2770.000 -0.72
1 2650.000 2668.000 0.68
2 2390.000 2480.000 3.77
5 2070.000 2054.230 -0.76
10 1600.000 1596.100 -0.24
20 1170.000 1115.000 -4.70
50 550.000 575.290 4.60
Simulation
Measurement

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Time*1mA
0 10n 20n 30n 40n 50n 60n 70n 80n
V(W1:3)
0V
5V
10V
15V
20V
25V
30V
D1
dmod
ID
32A
VDD
48V
0
-
+
W1
ION = 0
IOFF = 100uA
WIGTD = 0
TF = 10n
PW = 10m
PER = 1
I1 = 0
I2 = 1m
TR = 10n
U1
TPH4R606NH
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=48(V), VGS=10(V), ID=32(A)
Parameter Unit Measurement Simulation %Error
Qgs nC 14.143 14.247 0.74
Qgd nC 18.000 18.082 0.46
Qg nC 52.143 46.845 -10.16

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Time
1.8us 1.9us 2.0us 2.1us 2.2us 2.3us
V(U1:5)/3 V(U1:4)
0V
5V
10V
15V
L1
30nH
1 2
U1
TPH4R606NH
R1
4.7
V1TD = 2u
TF = 4n
PW = 5u
PER = 500u
V1 = 0
TR = 4n
V2 = 20
VDD
30
0
RL
1.88
L2
50nH
12
R2
4.7
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Test condition: VDD=30(V), VGS=0/10(V), ID=32(A), RG=4.7, RL=1.88
Parameter Unit Measurement Simulation %Error
ton ns 24.000 23.738 -1.09

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
I(VDS)
100mA
1.0A
10A
100A
1.0KA
0
VDS U1
TPH4R606NH
Body Diode Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Comparison Graph
Simulation result
Comparison table
IDR (A)
-VDS (V)
%Error
Measurement Simulation
0.1 0.659 0.655 -0.61
0.2 0.672 0.670 -0.30
0.5 0.687 0.690 0.44
1 0.706 0.707 0.13
2 0.728 0.726 -0.22
5 0.755 0.759 0.53
10 0.792 0.789 -0.38
20 0.825 0.826 0.12
50 0.895 0.891 -0.45
100 0.965 0.966 0.10

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Time
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
0
V1TD = 0ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.4V
TR = 10ns
V2 = 10.65V
R1
50
U1
TPH4R606NH
Reverse Recovery Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 25.600 25.931 1.29

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Reverse Recovery Characteristics Reference
trj = 25.6(ns)
trb = 193(ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement