SPICE MODEL of TK11A55D (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK11A55D
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs
Error (%)
Measurement Simulation
1 2.700 2.834 4.95
2 3.780 3.958 4.72
5 6.090 6.110 0.32
10 8.300 8.414 1.37
20 11.800 11.475 -2.75

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4
V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
4A
8A
12A
16A
20A
V2
20V1
0
0
V3
0Vdc
U1
TK11A55D
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
Error (%)
Measurement Simulation
1 5.000 5.065 1.29
2 5.330 5.359 0.54
5 6.000 5.953 -0.78
10 6.700 6.640 -0.89
20 7.600 7.643 0.57

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6
V_VDS
0V 1.0V 2.0V 3.0V
I(V3)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
TK11A55D
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 5.5A, VGS = 10V Measurement Simulation Error (%)
RDS (on)  0.5200 0.5202 0.03

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7
Time*1mA
0 10n 20n 30n 40n
V(W1:3)
0V
4V
8V
12V
16V
20V
VDD
400
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
11
0
D2
DbreakU1
TK11A55D
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=400V, ID=11A,
VGS=10V
Measurement Simulation Error (%)
Qgs nC 8.000 8.000 0.00
Qgd nC 9.200 9.197 -0.04
Qg nC 25.500 25.519 0.07

8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8
Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
Error (%)
Measurement Simulation
10.000 206.000 206.120 0.06
20.000 152.000 151.567 -0.28
50.000 92.000 92.766 0.83
100.000 62.000 61.508 -0.79
Simulation
Measurement

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9
0
VDD
201Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
U1
TK11A55D
L2
50nH
R2
50
R1
50
L1
30nH
RL
36
Time
0.6us 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us
V(U1:G) V(U1:D)/20
0V
2V
4V
6V
8V
10V
12V
14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=5.5A, VDD=200V
VGS=0/10V
Measurement Simulation Error(%)
ton ns 55.000 54.957 -0.08

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10
V_V2
0V 10V 20V 30V 40V 50V
I(V3)
0A
4A
8A
12A
16A
20A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=5.5V
7.25
6
7
6.25
6.5
6.75
7.510 8
V2
V1
0
V3
0Vdc
U1
TK11A55D

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11
V1
0
Vsense
0Vdc U1
TK11A55D
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VSD(V)
%Error
Measurement Simulation
0.1 0.6150 0.6142 -0.13
0.2 0.6450 0.6432 -0.28
0.5 0.6850 0.6853 0.05
1 0.7200 0.7231 0.43
2 0.7700 0.7708 0.11
5 0.8600 0.8589 -0.13
10 0.9500 0.9545 0.48
20 1.1050 1.0958 -0.83
30 1.2100 1.2153 0.44

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13
V1
TD = 0us
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.45v
TR = 10ns
V2 = 10.65v
R1
50
0
U1
DTK11A55D_P
Time
10us 12us 14us 16us 18us 20us 22us 24us 26us 28us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj us 0.680 0.686 0.92
trb us 0.960 0.957 -0.34
trr us 1.640 1.643 0.19

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14
Reverse Recovery Characteristic Reference
Trj=0.68(us)
Trb=0.96(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement